CMA30E1600PZ
4 1
3
Single Thyristor
Thyristor
Part number
CMA30E1600PZ
Marking on Product: CMA30E1600PZ
Backside: anode
TAV
T
V V1.42
RRM
30
1600
=
V=V
I=A
Features / Advantages: Applications: Package:
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
TO-263 (D2Pak-HV)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● High creepage distance
between terminals
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
Disclaimer Notice
www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions. 20190212cData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
CMA30E1600PZ
V = V
A²s
A²s
A²s
A²s
Symbol
Definition
Ratings
typ.
max.
I
V
IA
V
T
1.42
R0.5 K/W
min.
30
VV
10T = 25°C
VJ
T = °C
VJ
mA2V = V
T = 25°C
VJ
I = A
T
V
T = °C
C
115
P
tot
250 WT = 25°C
C
30
1600
forward voltage drop
total power dissipation
Conditions
1.80
T = 25°C
VJ
125
V
T0
V0.90T = °C
VJ
150
r
T
17 mΩ
V1.42T = °C
VJ
I = A
T
V
30
1.92
I = A60
I = A60
threshold voltage
slope resistance for power loss calculation only
µA
125
VV1600T = 25°C
VJ
IA47
P
GM
Wt = 30 µs 10
max. gate power dissipation
P
T = °C
C
150
Wt = 5
P
P
GAV
W0.5
average gate power dissipation
C
J
13
junction capacitance
V = V400 T = 25°Cf = 1 MHz
RVJ
pF
I
TSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
thJC
thermal resistance junction to case
T = °C
VJ
150
260
280
240
240
A
A
A
A
220
240
340
325
1600
300 µs
RMS forward current
T(RMS)
TAV
180° sine
average forward current
(di/dt)
cr
A/µs
150repetitive, I =T
VJ
= 125 °C; f = 50 Hz
critical rate of rise of current
V
GT
gate trigger voltage
V = 6 V T = °C25
(dv/dt) T = 125°C
critical rate of rise of voltage
A/µs500
V/µs
t = µs;
I A; V = ⅔ V
R = ∞; method 1 (linear voltage rise)
VJ
DVJ
90 A
T
P
G
= 0.2
di /dt A/µs;
G
=0.2
DRM
cr
V = ⅔ V
DRM
GK
500
1.3 V
T = °C-40
VJ
I
GT
gate trigger current
V = 6 V T = °C25
DVJ
28 mA
T = °C-40
VJ
1.6 V
50 mA
V
GD
gate non-trigger voltage
T = °C
VJ
0.2 V
I
GD
gate non-trigger current
1 mA
V = ⅔ V
D DRM
150
latching current
T = °C
VJ
90 mA
I
L
25t µs
p
= 10
I A;
G
= 0.2 di /dt A/µs
G
= 0.2
holding current
T = °C
VJ
60 mA
I
H
25V = 6 V
D
R = ∞
GK
gate controlled delay time
T = °C
VJ
2 µs
t
gd
25
I A;
G
= 0.5 di /dt A/µs
G
= 0.5
V = ½ V
D DRM
turn-off time
T = °C
VJ
150 µs
t
q
di/dt = A/µs10 dv/dt = V/µs20
V =
R
100 V; I A;
T
= 30 V = ⅔ V
DRM
tµs
p
= 200
non-repet., I = 30 A
T
125
R
thCH
thermal resistance case to heatsink
K/W
Thyristor
1700
RRM/DRM
RSM/DSM
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
R/D
reverse current, drain current
T
T
R/D
R/D
200
0.25
IXYS reserves the right to change limits, conditions and dimensions. 20190212cData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
CMA30E1600PZ
Ratings
Pr
odu
c
t
M
a
rk
in
g
Date Code
Part No.
Logo
Assembly Code
XXXXXXXXX
IXYS
Zyyww
000000
Assembly Line
C
M
A
30
E
1600
PZ
Part description
Thyristor (SCR)
Thyristor
(up to 1800V)
Single Thyristor
TO-263AB (D2Pak) (2HV)
=
=
=
CMA30E1600PN TO-220ABFP (3) 1600
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
T
VJ
°C150
virtual junction temperature
-40
Weight g1.5
Symbol
Definition
typ.
max.
min.
Conditions
operation temperature
F
C
N60
mounting force with clip
20
mm
mm
4.2
4.7
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current
35 A
per terminal
125-40
terminal to terminal
CLA30E1200PC
CLA30E1200PB
TO-263AB (D2Pak) (2)
TO-220AB (3)
1200
1200
CS22-12io1M
CLA30E1200HB
CS22-08io1M
TO-220ABFP (3)
TO-247AD (3)
TO-220ABFP (3)
1200
1200
800
TO-263 (D2Pak-HV)
CMA30E1600PZ-TUB Tube 50 523821CMA30E1600PZ
Similar Part Package Voltage class
CMA30E1600PB TO-220AB (3) 1600
Delivery Mode Quantity Code No.Ordering Number Marking on Product
Alternative
Ordering
CMA30E1600PZ-TRL 513695Tape & Reel 800CMA30E1600PZStandard
T
stg
°C150
storage temperature
-40
threshold voltage
V0.9
mΩ
V
0 max
R
0 max
slope resistance *
14
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Thyristor
150 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20190212cData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
CMA30E1600PZ
W
c2
A
A1
c
L
A2
2x b2
E1
2x b
H
D1
Supplier
Option
4
D2
E
2x e
L1
D
31
e1
min max min max
A 4.06 4.83 0.160 0.190
A1
A2
b 0.51 0.99 0.020 0.039
b2 1.14 1.40 0.045 0.055
c 0.40 0.74 0.016 0.029
c2 1.14 1.40 0.045 0.055
D 8.38 9.40 0.330 0.370
D1 8.00 8.89 0.315 0.350
D2
E 9.65 10.41 0.380 0.410
E1 6.22 8.50 0.245 0.335
e
e1
H 14.61 15.88 0.575 0.625
L 1.78 2.79 0.070 0.110
L1 1.02 1.68 0.040 0.066
Wtyp.
0.02 0.040 typ.
0.0008 0.002
All dimensions conform with
and/or within JEDEC standard.
2.3 0.091
2,54 BSC 0,100 BSC
4.28 0.169
Dim.
Millimeter Inches
typ. 0.10 typ. 0.004
2.41 0.095
3.81
(0.150)
1.78
(0.07)
2.54 (0.100)
3.05
(0.120)
10.92
(0.430)
9.02
(0.355)
mm (Inches)
Recommended min. foot print
4 1
3
Outlines TO-263 (D2Pak-HV)
IXYS reserves the right to change limits, conditions and dimensions. 20190212cData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
CMA30E1600PZ
0 40 80 120 160
0
10
20
30
40
0,01 0,1 1
100
150
200
2
5
0
0,5 1,0 1,5 2,0
0
10
20
30
40
50
60
1 10 100 1000 10000
0,0
0,2
0,4
0,6
I
T
[
A]
t [s]
V
T
[V]
2 3 4 5 6 7 8 9 011
10
100
1
0
00
I
2
t
[A
2
s]
t [ms]
I
TSM
[A]
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 45°C
50 Hz, 80% V
RRM
T
VJ
= 125°C
T
VJ
= 45°C
V
R
= 0 V
I
T(AV)M
[A]
T
case
[°C]
Z
thJC
[K/W]
t [ms]
Fig. 1 Forward characteristics Fig. 2 Surge overload current
I
TSM
: crest value, t: duration
Fig. 3 I
2
t versus time (1-10 s)
Fig. 4 Gate voltage & gate current
Triggering: A = no; B = possible; C = safe
Fig. 6 Max. forward current at
case temperature
Fig. 7 Transient thermal impedance junction to case
Fig. 5 Gate controlled delay time t
gd
0 10 20 30 40
0
20
40
60
I
T(AV)
[A]
P
(AV)
[W]
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
0 50 100 150
T
amb
[°C]
R
thHA
0.6
0.8
1.0
2.0
4.0
8.0
dc =
1
0.5
0.4
0.33
0.17
0.08
dc =
1
0.5
0.4
0.33
0.17
0.08
T
VJ
=
125°C
150°C
i R
thi
(K/W) t
i
(s)
1 0.08 0.01
2 0.06 0.0001
3 0.2 0.02
4 0.05 0.2
5 0.11 0.11
0 25 50 75
0
1
2
3
4
V
G
[V]
I
G
[mA]
I
GD
: T
VJ
= 125°C
I
GD
: T
VJ
= 25°C
I
GD
: T
VJ
= 25°C
I
GD
: T
VJ
= 0°C
I
GD
: T
VJ
= -40°C
A
B
B
B
C
10
-2
10
-1
10
0
10
1
10
-1
10
0
10
1
10
2
t
gd
[µs]
I
G
[A]
lim.
typ.
T
VJ
= 125°C
Thyristor
IXYS reserves the right to change limits, conditions and dimensions. 20190212cData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved