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MX29LV401T/B
4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE
3V ONLY FLASH MEMORY
• Status Reply
- Data polling & Toggle bit for detection of program and
erase operation completion.
• Ready/Busy pin (RY/BY)
- Provides a hardware method of detecting program or
erase operation completion.
• Sector protection
- Hardware method to disable any combination of
sectors from program or erase operations
- Temporary sector unprotect allows code changes in
previously locked sectors.
• 100,000 minimum erase/program cycles
• Latch-up protected to 100mA from -1V to VCC+1V
• Boot Sector Architecture
- T = Top Boot Sector
- B = Bottom Boot Sector
• Package type:
- 44-pin SOP
- 48-pin TSOP
- 48-ball CSP
• Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash
• 20 years data retention
FEATURES
• Extended single - supply voltage range 2.7V to 3.6V
• 524,288 x 8/262,144 x 16 switchable
• Single power supply operation
- 3.0V only operation for read, erase and program
operation
• Fast access time: 55R/70/90ns
• Low power consumption
- 20mA maximum active current
- 0.2uA typical standby current
• Command register architecture
- Byte/word Programming (9us/11us typical)
- Sector Erase (Sector structure 16K-Byte x 1,
8K-Byte x 2, 32K-Byte x1, and 64K-Byte x7)
• Auto Erase (chip & sector) and Auto Program
- Automatically erase any combination of sectors with
Erase Suspend capability.
- Automatically program and verify data at specified
address
• Erase suspend/Erase Resume
- Suspends sector erase operation to read data from,
or program data to, any sector that is not being erased,
then resumes the erase.
GENERAL DESCRIPTION
The MX29LV401T/B is a 4-mega bit Flash memory or-
ganized as 512K bytes of 8 bits or 256K words of 16
bits. MXIC's Flash memories offer the most cost-effec-
tive and reliable read/write non-volatile random access
memory. The MX29LV401T/B is packaged in 44-pin
SOP, 48-pin TSOP and 48-ball CSP. It is designed to be
reprogrammed and erased in system or in standard
EPROM programmers.
The standard MX29LV401T/B off ers access time as fast
as 55ns, allowing operation of high-speed microproces-
sors without wait states. To eliminate bus contention,
the MX29LV401T/B has separate chip enable (CE) and
output enable (OE) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29LV401T/B uses a command register to manage
this functionality. The command register allows for 100%
TTL level control inputs and fixed power supply levels
during erase and programming, while maintaining maxi-
mum EPR OM compatibility.
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and programming
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and program operations produces reliable cy-
cling. The MX29LV401T/B uses a 2.7V~3.6V VCC sup-
ply to perform the High Reliability Erase and auto Pro-
gram/Erase algorithms.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up pro-
tection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC + 1V.
ADVANCED INFORMATION
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PIN CONFIGURATIONS
44 SOP(500 mil)
PIN DESCRIPTION
SYMBOL PIN NAME
A0~A17 Address Input
Q0~Q14 Data Input/Output
Q15/A-1 Q15(Word mode)/LSB addr(Byte mode)
CE Chip Enable Input
WE Write Enable Input
BYTE Word/Byte Selection input
RESET Hardware Reset Pin/Sector Protect Unlock
OE Output Enable Input
RY/BY Ready/Busy Output
VC C Power Supply Pin (2.7V~3.6V)
GND Ground Pin
48 TSOP (Standard Type) (12mm x 20mm)
48-Ball CSP (6mm x 8mm, Ball Pitch = 0.8 mm), Top View , Balls Facing Down
A BCDEFGH
6 A13 A12 A14 A15 A16 BYTE Q15/A-1 GND
5 A9 A8 A10 A11 Q7 Q14 Q13 Q6
4 WE RESET N C N C Q5 Q12 Vcc Q4
3 RY/BY NC NC NC Q2 Q10 Q11 Q3
2 A7 A17 A6 A5 Q0 Q8 Q9 Q1
1A3A4 A2A1A0CEOEGND
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
NC
RY/BY
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE
GND
OE
Q0
Q8
Q1
Q9
Q2
Q10
Q3
Q11
RESET
WE
A8
A9
A10
A11
A12
A13
A14
A15
A16
BYTE
GND
Q15/A-1
Q7
Q14
Q6
Q13
Q5
Q12
Q4
VCC
MX29LV401T/B
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE
RSEET
NC
NC
RY/BY
NC
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
A16
BYTE
GND
Q15/A-1
Q7
Q14
Q6
Q13
Q5
Q12
Q4
VCC
Q11
Q3
Q10
Q2
Q9
Q1
Q8
Q0
OE
GND
CE
A0
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
MX29LV401T/B
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BLOCK STRUCTURE
Table 1: MX29LV401T SECTOR ARCHITECTURE
Note: Byte mode:address range A17:A-1, word mode:address range A17:A0.
Sector Sector Size Address range Sector Address
Byte Mode W ord Mode Byte Mode (x8) W ord Mode (x16) A17 A16 A15 A14 A13 A1 2
SA0 64Kbytes 32Kwords 00000-0FFFF 00000-07FFF 0 0 0 X X X
SA1 64Kbytes 32Kwords 10000-1FFFF 08000-0FFFF 0 0 1 X X X
SA2 64Kbytes 32Kwords 20000-2FFFF 10000-17FFF 0 1 0 X X X
SA3 64Kbytes 32Kwords 30000-3FFFF 18000-1FFFF 0 1 1 X X X
SA4 64Kbytes 32Kwords 40000-4FFFF 20000-27FFF 1 0 0 X X X
SA5 64Kbytes 32Kwords 50000-5FFFF 28000-2FFFF 1 0 1 X X X
SA6 64Kbytes 32Kwords 60000-6FFFF 30000-37FFF 1 1 0 X X X
SA7 32Kbytes 16Kwords 70000-77FFF 38000-3BFFF 1 1 1 0 X X
SA8 8Kbytes 4Kwords 78000-79FFF 3C000-3CFFF 1 11100
SA9 8Kbytes 4Kwords 7A000-7BFFF 3D000-3DFFF 1 11101
SA10 16Kbytes 8Kwords 7C000-7FFFF 3E000-3FFFF 1 1111X
Sector Sector Size Address range Sector Address
Byte Mode W ord Mode Byte Mode (x8) W ord Mode (x16) A17 A16 A15 A14 A13 A1 2
SA0 16Kbytes 8Kwords 00000-03FFF 00000-01FFF 0 0000X
SA1 8Kbytes 4Kwords 04000-05FFF 02000-02FFF 0 00010
SA2 8Kbytes 4Kwords 06000-07FFF 03000-03FFF 0 00011
SA3 32Kbytes 16Kwords 08000-0FFFF 04000-07FFF 0 0 0 1 X X
SA4 64Kbytes 32Kwords 10000-1FFFF 08000-0FFFF 0 0 1 X X X
SA5 64Kbytes 32Kwords 20000-2FFFF 10000-17FFF 0 1 0 X X X
SA6 64Kbytes 32Kwords 30000-3FFFF 18000-1FFFF 0 1 1 X X X
SA7 64Kbytes 32Kwords 40000-4FFFF 20000-27FFF 1 0 0 X X X
SA8 64Kbytes 32Kwords 50000-5FFFF 28000-2FFFF 1 0 1 X X X
SA9 64Kbytes 32Kwords 60000-6FFFF 30000-37FFF 1 1 0 X X X
SA10 64Kbytes 32Kwords 70000-7FFFF 38000-3FFFF 1 1 1 X X X
Table 2: MX29LV401B SECTOR ARCHITECTURE
Note: Byte mode:address range A17:A-1, word mode:address range A17:A0.
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BLOCK DIAGRAM
CONTROL
INPUT
LOGIC
PROGRAM/ERASE
HIGH V OLTAGE
WRITE
STATE
MACHINE
(WSM)
STATE
REGISTER
MX29LV401T/B
FLASH
ARRAY
X-DECODER
ADDRESS
LATCH
AND
BUFFER
Y-PASS GATE
Y-DECODER
ARRAY
SOURCE
HV
COMMAND
DATA
DECODER
COMMAND
DATA LATCH
I/O BUFFER
PGM
DATA
HV
PROGRAM
DATA LATCH
SENSE
AMPLIFIER
Q0-Q15/A-1
A0-A17
CE
OE
WE
RESET
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AUTOMATIC PROGRAMMING
The MX29L V401T/B is byte programmable using the Au-
tomatic Programming algorithm. The Automatic Pro-
gramming algorithm makes the external system do not
need to have time out sequence nor to verify the data
programmed. The typical chip programming time at room
temperature of the MX29LV401T/B is less than 10 sec-
onds.
AUTOMATIC CHIP ERASE
The entire chip is bulk erased using 10 ms erase pulses
according to MXIC's Automatic Chip Erase algorithm.
Typical erasure at room temperature is accomplished in
less than 25 second. The Automatic Erase algorithm
automatically programs the entire array prior to electri-
cal erase. The timing and verification of electrical erase
are controlled internally within the device.
AUTOMATIC SECTOR ERASE
The MX29LV401T/B is sector(s) erasable using MXIC's
Auto Sector Erase algorithm. The Automatic Sector
Erase algorithm automatically programs the specified
sector(s) prior to electrical erase. The timing and verifi-
cation of electrical erase are controlled internally within
the device. An erase operation can erase one sector,
multiple sectors, or the entire device.
AUTOMATIC PROGRAMMING ALGORITHM
MXIC's Automatic Programming algorithm requires the
user to only write program set-up commands (including
2 unlock write cycle and A0H) and a program command
(progr am data and address). The device automatically
times the programming pulse width, provides the pro-
gram verification, and counts the number of sequences.
The device provides an unlock bypass mode with faster
programming. Only two write cycles are needed to pro-
gr am a word or byte, instead of f our . A status bit similar
to DATA polling and a status bit toggling between con-
secutive read cycles, provide feedback to the user as
to the status of the programming operation. Refer to write
operation status, table 7, for more information on these
status bits.
AUTOMATIC ERASE ALGORITHM
MXIC's Automatic Erase algorithm requires the user to
write commands to the command register using stan-
dard microprocessor write timings. The de vice will auto-
matically pre-program and v erify the entire arra y. Then
the device automatically times the erase pulse width,
provides the erase verification, and counts the number
of sequences. A status bit toggling between consecu-
tive read cycles provides feedback to the user as to the
status of the erasing operation.
Register contents serve as inputs to an internal state-
machine which controls the erase and programming cir-
cuitry . During write cycles, the command register inter-
nally latches address and data needed for the program-
ming and erase operations. During a system write cycle,
addresses are latched on the falling edge, and data are
latched on the rising edge of WE or CE, whiche ver hap-
pens first.
MXIC's Flash technology combines years of EPROM
e xperience to produce the highest le vels of quality, reli-
ability , and cost eff ectiveness. The MX29LV401T/B elec-
trically erases all bits simultaneously using Fowler-
Nordheim tunneling. The bytes are programmed by us-
ing the EPROM programming mechanism of hot elec-
tron injection.
During a program cycle, the state-machine will control
the program sequences and command register will not
respond to any command set. During a Sector Erase
cycle, the command register will only respond to Erase
Suspend command. After Erase Suspend is completed,
the device stays in read mode. After the state machine
has completed its task, it will allow the command regis-
ter to respond to its full command set.
AUTOMATIC SELECT
The automatic select mode provides manufacturer and
device identification, and sector protection verification,
through identifier codes output on Q7~Q0. This mode is
mainly adapted for programming equipment on the de-
vice to be programmed with its programming algorithm.
When programming by high voltage method, automatic
select mode requires VID (11.5V to 12.5V) on address
pin A9 and other address pin A6, A1 as referring to T able
3. In addition, to access the automatic select codes in-
system, the host can issue the automatic select com-
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REV. 0.1, APR. 18, 2002
mand through the command register without requiring
VID, as shown in table 4.
To verify whether or not sector being protected, the sec-
tor address must appear on the appropriate highest or-
der address bit (see Table 1 and Table 2). The rest of
address bits, as shown in table3, are don't care. Once
all necessary bits have been set as required, the pro-
gramming equipment may read the corresponding iden-
tifier code on Q7~Q0.
A17 A11 A9 A8 A6 A5 A1 A0
Description Mode CE OE WE RESET | | | | Q15~Q0
A12 A10 A7 A2
Manufacture L L H H X X VID X L X L L C2H
Code
Read Device ID Word L L H H X X VID X L X L H 22B9H
Silicon (Top Boot Block) Byte L L H H X X VID X L X L H XXB9H
I D Device ID (Bottom Word L L H H X X VID X L X L H 22BAH
Boot Block) Byte L L H H X X VI D X L X L H XXBAH
XX01H
Sector Protection L L H H SA X VID X L X H L (protected)
Verification XX00H
(unprotected)
TABLE 3. MX29LV401T/B AUTOSELECT MODE OPERATION
NO TE:SA=Sector Address, X=Don't Care, L=Logic Low , H=Logic High
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First Bus Second Bus Third Bus Fourth Bus Fifth Bus Sixth Bus
Command Bus Cycle Cycle Cycle Cycle Cycle Cycle
Cycle Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
Reset 1 XXXH F0H
Read 1 RA RD
Read Silicon ID Word 4 555H AAH 2AAH 55H 555H 90H ADI DDI
Byte 4 AAAH AAH 555H 55H AAAH 90H ADI DDI
Sector Protect Word 4 555H AAH 2AAH 55H 555H 90H (SA) XX00H
Verify x02H XX01H
Byte 4 AAAH AAH 555H 55H AAAH 90H (SA) 00H
x04H 01H
Program Word 4 555H AAH 2AAH 55H 555H A0H PA PD
Byte 4 AAAH AAH 555H 55H AAAH A0H PA PD
Chip Erase Word 6 555H AAH 2AAH 55H 555H 80H 555H AAH 2AAH 55H 555H 10H
Byte 6 AAAH AAH 555H 55H AAAH 80H AAAH AAH 555H 55H AAAH 10H
Sector Erase Word 6 555H AAH 2AAH 55H 555H 80H 555H AAH 2AAH 55H SA 30H
Byte 6 AAAH AAH 555H 55H AAAH 80H AAAH AAH 555H 55H SA 30H
Sector Erase Suspend 1 XXXH B0H
Sector Erase Resume 1 XXXH 3 0 H
T ABLE 4. MX29L V401T/B COMMAND DEFINITIONS
Note:
1. ADI = Address of Device identifier; A1=0, A0 = 0 for manufacturer code,A1=0, A0 = 1 for device code. A2-A17=do not care.
(Refer to table 3)
DDI = Data of Device identifier : C2H for manufacture code, B9H/BAH (x8) and 22B9H/22BAH (x16) for device code.
X = X can be VIL or VIH
RA=Address of memory location to be read.
RD=Data to be read at location RA.
2.PA = Address of memor y location to be programmed.
PD = Data to be programmed at location PA.
SA = Address of the sector to be erased.
3.The system should generate the following address patterns: 555H or 2AAH to Address A10~A0 in word mode/AAAH or
555H to Address A10~A-1 in byte mode.
Address bit A11~A17=X=Don't care for all address commands except for Program Address (PA) and Sector
Address (SA). Write Sequence may be initiated with A11~A17 in either state.
4. For Sector Protect Verify operation:If read out data is 01H, it means the sector has been protected. If read out data is 00H, it
means the sector is still not being protected.
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ADDRESS Q8~Q15
DESCRIPTION CE O E WE RESET A17 A10 A9 A8 A6 A5 A1 A 0 Q0~Q7 BYTE BYTE
A11 A7 A2 =VIH =VIL
Read L L H H AIN Dout Dout Q8~Q14=High Z
Q15=A-1
Write L H L H AIN DIN(3) DIN Q8~Q14=High Z
Q15=A-1
Reset X X X L X High Z High Z High Z
Temporary sector unlock X X X VID AIN DIN DIN High Z
Output Disable L H H H X High Z High Z High Z
Standby Vcc±X X Vcc±X High Z High Z High Z
0.3V 0.3V
Sector Protect L H L VID SA X X X L X H L DIN X X
Chip Unprotect L H L VID X X X X H X H L DIN X X
Sector Protection Verify L L H H SA X VID X L X H L CODE(5) X X
TABLE 5. MX29LV401T/B BUS OPERATION
NOTES:
1. Manufacturer and device codes may also be accessed via a command register wr ite sequence. Refer to Table 4.
2. VID is the Silicon-ID-Read high voltage, 11.5V to 12.5V.
3. Refer to Table 4 for valid Data-In during a wr ite operation.
4. X can be VIL or VIH.
5. Code=00H/XX00H means unprotected.
Code=01H/XX01H means protected.
6. A17~A12=Sector address for sector protect.
7. The sector protect and chip unprotect functions may also be implemented via programming equipment.
sequences. Note that the Erase Suspend (B0H) and
Erase Resume (30H) commands are valid only while the
Sector Erase operation is in progress.
COMMAND DEFINITIONS
Device operations are selected by writing specific ad-
dress and data sequences into the command register.
Writing incorrect address and data values or writing them
in the improper sequence will reset the device to the
read mode. Table 4 defines the valid register command
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REQUIREMENTS FOR READING ARRAY
DATA
To read array data from the outputs, the system must
drive the CE and OE pins to VIL. CE is the power control
and selects the device. OE is the output control and gates
arra y data to the output pins. WE should remain at VIH.
The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory content
occurs during the power transition. No command is
necessary in this mode to obtain array data. Standard
microprocessor read cycles that assert valid address on
the device address inputs produce valid data on the device
data outputs. The device remains enabled for read access
until the command register contents are altered.
WRITE COMMANDS/COMMAND
SEQUENCES
To program data to the device or erase sectors of memory
, the system must drive WE and CE to VIL, and OE to
VIH.
The device features an Unlock Bypass mode to facilitate
faster programming. Once the device enters the Unlock
Bypass mode, only two write cycles are required to
program a byte, instead of four. The "byte Program
Command Sequence" section has details on
programming data to the device using both standard and
Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sectors
, or the entire device. Table indicates the address space
that each sector occupies. A "sector address" consists
of the address bits required to uniquely select a sector .
The "Writing specific address and data commands or
sequences into the command register initiates device
operations. Table 1 defines the v alid register command
sequences. Writing incorrect address and data values or
writing them in the improper sequence resets the device
to reading array data. Section has details on erasing a
sector or the entire chip, or suspending/resuming the erase
operation.
After the system writes the autoselect command
sequence, the device enters the autoselect mode. The
system can then read autoselect codes from the internal
register (which is separate from the memory array) on
Q7-Q0. Standard read cycle timings apply in this mode.
Refer to the Autoselect Mode and Autoselect Command
Sequence section for more information.
ICC2 in the DC Characteristics table represents the
active current specification f or the write mode. The "AC
Characteristics" section contains timing specification
table and timing diagrams for write operations.
STANDBY MODE
When using both pins of CE and RESET, the device
enter CMOS Standby with both pins held at Vcc ± 0.3V.
IF CE and RESET are held at VIH, but not within the
range of VCC ± 0.3V, the device will still be in the standby
mode, but the standby current will be larger . During Auto
Algorithm operation, Vcc active current (Icc2) is required
e ven CE = "H" until the operation is completed. The de-
vice can be read with standard access time (tCE) from
either of these standby modes, before it is ready to read
data.
OUTPUT DISABLE
With the OE input at a logic high level (VIH), output from
the devices are disabled. This will cause the output pins
to be in a high impedance state.
RESET OPERATION
The RESET pin provides a hardware method of resetting
the device to reading array data. When the RESET pin is
driven low for at least a period of tRP, the device
immediately terminates any operation in progress,
tristates all output pins, and ignores all read/write
commands for the duration of the RESET pulse. The
device also resets the internal state machine to reading
array data. The operation that was interrupted should be
reinitiated once the device is ready to accept another
command sequence, to ensure data integrity
Current is reduced for the duration of the RESET pulse.
When RESET is held at VSS±0.3V, the device draws
CMOS standby current (ICC4). If RESET is held at VIL
but not within VSS±0.3V, the standby current will be
greater.
The RESET pin ma y be tied to system reset circuitry. A
system reset would that also reset the Flash memory,
enabling the system to read the boot-up firm-ware from
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READ/RESET COMMAND
The read or reset operation is initiated by writing the
read/reset command sequence into the command reg-
ister. Microprocessor read cycles retrieve array data.
The device remains enabled for reads until the command
register contents are altered.
If program-fail or erase-fail happen, the write of F0H will
reset the device to abor t the operation. A valid com-
mand must then be written to place the device in the
desired state.
SILICON-ID READ COMMAND
Flash memories are intended for use in applications where
the local CPU alters memory contents. As such, manu-
facturer and device codes must be accessible while the
device resides in the target system. PROM program-
mers typically access signature codes by raising A9 to
a high voltage (VID). However, multiplexing high volt-
age onto address lines is not generally desired system
design practice.
The MX29LV401T/B contains a Silicon-ID-Read opera-
tion to supple traditional PROM programming methodol-
ogy. The operation is initiated by writing the read silicon
ID command sequence into the command register . Fol-
lowing the command write, a read cycle with A1=VIL,
A0=VIL retrieves the manufacturer code of C2H/00C2H.
A read cycle with A1=VIL, A0=VIH returns the device
code of B9H/22B9H f or MX29LV401T, BAH/22BAH for
MX29LV401B.
SET-UP AUTOMATIC CHIP/SECTOR ERASE
COMMANDS
Chip erase is a six-b us cycle oper ation. There are two
"unlock" write cycles. These are followed b y writing the
"set-up" command 80H. Two more "unlock" wr ite cy-
cles are then followed by the chip erase command 10H
or sector erase command 30H.
The Automatic Chip Erase does not require the device
to be entirely pre-programmed prior to executing the Au-
tomatic Chip Erase. Upon executing the Automatic Chip
Erase, the device will automatically program and verify
the entire memory for an all-zero data pattern. When the
device is automatically verified to contain an all-zero
pattern, a self-timed chip erase and verify begin. The
erase and verify operations are completed when the data
on Q7 is "1" at which time the device returns to the
Read mode. The system is not required to provide any
control or timing during these operations.
When using the Automatic Chip Erase algorithm, note
that the erase automatically terminates when adequate
erase margin has been achieved for the memory array(no
erase verification command is required).
If the Erase operation was unsuccessful, the data on
Q5 is "1"(see Table 7), indicating the erase operation
exceed internal timing limit.
The automatic erase begins on the rising edge of the
last WE or CE pulse, whichever happens first in the
command sequence and terminates when the data on
Q7 is "1" and the data on Q6 stops toggling for two con-
secutive read cycles, at which time the device returns
to the Read mode.
the Flash memory .
If RESET is asserted during a program or erase
operation, the RY/BY pin remains a "0" (busy) until the
internal reset operation is complete, which requires a
time of tREADY (during Embedded Algorithms). The
system can thus monitor RY/BY to determine whether
the reset operation is complete. If RESET is asser ted
when a program or erase operation is completed within a
time of tREAD Y (not during Embedded Algorithms). The
system can read data tRH after the RESET pin returns
to VIH.
Refer to the AC Characteristics tables for RESET
parameters and to Figure 22 for the timing diagram.
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Pins A0 A1 Q15~Q8 Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 Code(Hex)
Manufacture code Word VIL VIL 00H 1 1 0 0 0 0 1 0 00C2H
Byte VIL VIL X 1 1 0 0 0 0 1 0 C2H
Device code Word VIH VIL 22H 1 0 1 1 1 0 0 1 22B9H
for MX29LV401T Byte VIH VIL X 1 0 1 1 1 0 0 1 B9H
Device code Word VIH VIL 22H 1 0 1 1 1 0 1 0 22BAH
for MX29LV401B Byte VIH VIL X 1 0 1 1 1 0 1 0 BAH
Sector Protection X VIH X 0 0 0 0 0 0 0 1 01H (Protected)
V erification X VIH X 0 0 0 0 0 0 0 0 00H (Unprotected)
TABLE 6. EXPANDED SILICON ID CODE
READING ARRAY DATA
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. The device is also ready to read array data
after completing an Automatic Program or Automatic
Erase algorithm.
After the device accepts an Erase Suspend command,
the device enters the Erase Suspend mode. The sys-
tem can read array data using the standard read tim-
ings, except that if it reads at an address within erase-
suspended sectors, the device outputs status data. After
completing a programming operation in the Erase
Suspend mode, the system may once again read array
data with the same exception. See Erase Suspend/Erase
Resume Commands” for more infor-mation on this mode.
The system must issue the reset command to re-en-
able the device for reading array data if Q5 goes high, or
while in the autoselect mode. See the "Reset Command"
section, next.
RESET COMMAND
Writing the reset command to the device resets the
device to reading array data. Address bits are don't care
for this command.
The reset command may be written between the se-
quence cycles in an erase command sequence before
erasing begins. This resets the device to reading array
data. Once erasure begins, however, the device ignores
reset commands until the operation is complete.
The reset command may be written between the se-
quence cycles in a program command sequence be-fore
programming begins. This resets the device to reading
array data (also applies to programming in Erase
Suspend mode). Once programming begins, however,
the device ignores reset commands until the operation
is complete.
The reset command may be written between the se-
quence cycles in an SILICON ID READ command
sequence. Once in the SILICON ID READ mode, the
reset command must be written to return to reading array
data (also applies to SILICON ID READ during Erase
Suspend).
If Q5 goes high during a program or erase operation,
writing the reset command returns the device to read-
ing array data (also applies during Erase Suspend).
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(no erase verification command is required). Sector
erase is a six-bus cycle operation. There are two "un-
lock" write cycles. These are followed by writing the set-
up command 80H. Two more "unlock" write cycles are
then followed by the sector erase command 30H. The
sector address is latched on the falling edge of WE or
CE, whichever happens later , while the command (data)
is latched on the rising edge of WE or CE, whichever
happens first. Sector addresses selected are loaded
into internal register on the sixth falling edge of WE or
CE, whichever happens later. Each successive sector
load cycle started by the falling edge of WE or CE,
whichever happens later must begin within 50us from
the rising edge of the preceding WE or CE, whichev e r
happens first. Otherwise, the loading period ends and
internal auto sector erase cycle star ts. (Monitor Q3 to
determine if the sector erase timer window is still open,
see section Q3, Sector Erase Timer .) Any command other
than Sector Erase(30H) or Erase Suspend(B0H) during
the time-out period resets the device to read mode.
SECTOR ERASE COMMANDS
The Automatic Sector Erase does not require the de-
vice to be entirely pre-programmed prior to executing
the Automatic Sector Erase Set-up command and Au-
tomatic Sector Erase command. Upon executing the
Automatic Sector Erase command, the device will auto-
matically program and verify the sector(s) memory for
an all-zero data pattern. The system is not required to
provide any control or timing during these operations.
When the sector(s) is automatically verified to contain
an all-zero pattern, a self-timed sector erase and verify
begin. The erase and ver ify operations are complete
when the data on Q7 is "1" and the data on Q6 stops
toggling for two consecutive read cycles, at which time
the device returns to the Read mode. The system is not
required to provide any control or timing during these
operations.
When using the Automatic sector Erase algorithm, note
that the erase automatically terminates when adequate
erase margin has been achieved for the memory array
Status Q7 Q6 Q5 Q3 Q2 RY/BY
(Note1) (Note2)
Byte Program in Auto Program Algorithm Q7 Toggle 0 N/A No 0
Toggle
Auto Erase Algorithm 0 Toggle 0 1 Toggle 0
Erase Suspend Read 1 No 0 N/A Toggle 1
(Erase Suspended Sector) Toggle
In Progress Erase Suspended Mode Erase Suspend Read Data Data Data Data Data 1
(Non-Erase Suspended Sector)
Erase Suspend Program Q7 Toggle 0 N/A N/A 0
Byte Program in Auto Program Algorithm Q7 Toggle 1 N/A No 0
Toggle
Exceeded
Time Limits Auto Erase Algorithm 0 Toggle 1 1 Toggle 0
Erase Suspend Program Q7 Toggle 1 N/A N/A 0
Table 7. Write Operation Status
Note:
1. Q7 and Q2 require a valid address when reading status information. Refer to the appropriate subsection for further
details.
2. Q5 switches to '1' when an Auto Program or Auto Erase operation has exceeded the maximum timing limits.
See "Q5:Exceeded Timing Limits " for more infor mation.
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ERASE SUSPEND
This command only has meaning while the state ma-
chine is executing Automatic Sector Erase operation,
and therefore will only be responded during Automatic
Sector Erase operation. When the Erase Suspend com-
mand is written during a sector erase operation, the de-
vice requires a maximum of 20us to suspend the erase
operations. However, When the Erase Suspend command
is written during the sector erase time-out, the device
immediately terminates the time-out period and suspends
the erase operation. After this command has been ex-
ecuted, the command register will initiate erase suspend
mode. The state machine will return to read mode auto-
matically after suspend is ready. At this time, state ma-
chine only allows the command register to respond to
the Read Memor y Array, Erase Resume and program
commands.
The system can determine the status of the program
operation using the Q7 or Q6 status bits, just as in the
standard program operation. After an erase-suspend pro-
gram operation is complete, the system can once again
read array data within non-suspended sectors.
ERASE RESUME
This command will cause the command register to clear
the suspend state and return back to Sector Erase mode
but only if an Erase Suspend command was previously
issued. Erase Resume will not have any effect in all
other conditions. Another Erase Suspend command can
be written after the chip has resumed erasing.
AUTOMATIC PROGRAM COMMANDS
To initiate Automatic Program mode, A three-cycle com-
mand sequence is required. There are two "unlock" write
cycles. These are followed by writing the Automatic Pro-
gram command A0H.
Once the Automatic Program command is initiated, the
next WE pulse causes a transition to an active program-
ming operation. Addresses are latched on the falling
edge, and data are internally latched on the rising edge
of the WE or CE, whichever happens first. The r ising
edge of WE or CE, whichever happens first, also begins
the programming operation. The system is not required
to provide further controls or timings. The device will
automatically provide an adequate internally generated
program pulse and verify margin.
The device provides Q2, Q3, Q5, Q6, Q7, and R Y/BY to
determine the status of a write operation. If the program
operation was unsuccessful, the data on Q5 is "1"(see
Table 7), indicating the program operation e xceed inter-
nal timing limit. The automatic programming operation is
completed when the data read on Q6 stops toggling for
two consecutive read cycles and the data on Q7 and Q6
are equivalent to data written to these two bits, at which
time the device returns to the Read mode(no program
verify command is required).
WORD/BYTE PROGRAM COMMAND SEQUENCE
The device programs one byte of data for each program
operation. The command sequence requires four bus
cycles, and is initiated by writing two unlock write cycles,
followed by the program set-up command. The program
address and data are written next, which in turn initiate
the Embedded Program algorithm. The system is not
required to provide further controls or timings. The de vice
automatically generates the program pulses and verifies
the programmed cell margin. Table 1 shows the address
and data requirements for the byte program command
sequence.
When the Embedded Program algorithm is complete,
the device then returns to reading array data and
addresses are no longer latched. The system can
determine the status of the program operation by using
Q7, Q6, or RY/BY. See "Write Operation Status" for
information on these status bits.
Any commands written to the device during the Em-
bedded Program Algorithm are ignored. Note that a
hardware reset immediately terminates the programming
operation. The Byte Progr am command sequence should
be reinitiated once the device has reset to reading array
data, to ensure data integrity.
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed from a
"0" back to a "1". Attempting to do so may halt the
operation and set Q5 to "1" ,” or cause the Data Polling
algorithm to indicate the operation was successful.
However, a succeeding read will show that the data is
still "0". Only erase operations can convert a "0" to a
"1".
WRITE OPERATION STATUS
The device provides several bits to determine the sta-
tus of a write operation: Q2, Q3, Q5, Q6, Q7, and RY/
BY. Table 10 and the following subsections describe the
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functions of these bits. Q7, R Y/BY, and DQ6 each offer
a method for determining whether a program or erase
operation is complete or in progress. These three bits
are discussed first.
Q7: Data Polling
The Data Polling bit, Q7, indicates to the host sys-tem
whether an Automatic Algorithm is in progress or com-
pleted, or whether the device is in Erase Suspend. Data
P olling is valid after the rising edge of the final WE pulse
in the program or erase command sequence.
During the Automatic Program algorithm, the device out-
puts on Q7 the complement of the datum programmed
to Q7. This Q7 status also applies to progr amming dur-
ing Erase Suspend. When the Automatic Program algo-
rithm is complete, the device outputs the datum pro-
gr ammed to Q7. The system must provide the program
address to read valid status information on Q7. If a pro-
gr am address falls within a protected sector, Data Poll-
ing on Q7 is active for approximately 1 us, then the de-
vice returns to reading array data.
During the Automatic Erase algorithm, Data Polling pro-
duces a "0" on Q7. When the Automatic Erase algo-
rithm is complete, or if the device enters the Erase Sus-
pend mode, Data Polling produces a "1" on Q7. This is
analogous to the complement/true datum out-put de-
scribed for the Automatic Program algorithm: the erase
function changes all the bits in a sector to "1" prior to
this, the device outputs the "complement,” or "0".” The
system must provide an address within any of the sec-
tors selected for erasure to read valid status information
on Q7.
After an erase command sequence is written, if all sec-
tors selected f or erasing are protected, Data P olling on
Q7 is active for approximately 100 us, then the device
returns to reading array data. If not all selected sectors
are protected, the Automatic Erase algorithm erases the
unprotected sectors, and ignores the selected sectors
that are protected.
When the system detects Q7 has changed from the
complement to true data, it can read valid data at Q7-Q0
on the following read cycles. This is because Q7 may
change asynchronously with Q0-Q6 while Output En-
ab le (OE) is asserted low .
RY/BY:Ready/Busy
The RY/BY is a dedicated, open-drain output pin that
indicates whether an Automatic Erase/Program algorithm
is in progress or complete. The RY/BY status is valid
after the rising edge of the final WE or CE, whichever
happens first, in the command sequence. Since R Y/BY
is an open-drain output, se veral R Y/BY pins can be tied
together in parallel with a pull-up resistor to Vcc.
If the output is low (Busy), the device is actively erasing
or programming. (This includes programming in the Erase
Suspend mode.) If the output is high (Ready), the de-
vice is ready to read array data (including during the
Erase Suspend mode), or is in the standby mode.
Table 7 shows the outputs for R Y/BY during write opera-
tion.
Q6:Toggle BIT I
Toggle Bit I on Q6 indicates whether an Automatic Pro-
gram or Erase algorithm is in progress or complete, or
whether the device has entered the Erase Suspend mode.
Toggle Bit I may be read at any address, and is valid
after the rising edge of the final WE or CE, whichever
happens first, in the command sequence(prior to the pro-
gram or erase operation), and during the sector time-
out.
During an Automatic Program or Erase algorithm opera-
tion, successive read cycles to any address cause Q6
to toggle. The system ma y use either OE or CE to con-
trol the read cycles. When the operation is complete, Q6
stops toggling.
After an erase command sequence is written, if all sec-
tors selected for erasing are protected, Q6 toggles and
returns to reading array data. If not all selected sectors
are protected, the Automatic Erase algorithm erases the
unprotected sectors, and ignores the selected sectors
that are protected.
The system can use Q6 and Q2 together to determine
whether a sector is actively erasing or is erase sus-
pended. When the device is actively erasing (that is, the
Automatic Erase algorithm is in progress), Q6 toggling.
When the device enters the Erase Suspend mode, Q6
stops toggling. Howe v er, the system must also use Q2
to determine which sectors are erasing or erase-sus-
pended. Alternativ ely, the system can use Q7.
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Q2:Toggle Bit II
The "Toggle Bit II" on Q2, when used with Q6, indicates
whether a par ticular sector is actively erasing (that is,
the Automatic Erase algorithm is in process), or whether
that sector is erase-suspended. Toggle Bit II is valid
after the rising edge of the final WE or CE, whichever
happens first, in the command sequence.
Q2 toggles when the system reads at addresses within
those sectors that have been selected for erasure. (The
system may use either OE or CE to control the read
cycles.) But Q2 cannot distinguish whether the sector
is actively erasing or is erase-suspended. Q6, by com-
parison, indicates whether the device is actively eras-
ing, or is in Erase Suspend, but cannot distinguish which
sectors are selected f or erasure. Thus , both status bits
are required for sectors and mode information. Refer to
Table 7 to compare outputs f or Q2 and Q6.
Reading Toggle Bits Q6/ Q2
Whenever the system initially begins reading toggle bit
status, it must read Q7-Q0 at least twice in a row to
determine whether a toggle bit is toggling. Typically , the
system would note and store the value of the toggle bit
after the first read. After the second read, the system
would compare the new value of the toggle bit with the
first. If the toggle bit is not toggling, the device has
completed the program or erase operation. The system
can read array data on Q7-Q0 on the following read cycle.
How ever, if after the initial two read cycles, the system
determines that the toggle bit is still toggling, the sys-
tem also should note whether the value of Q5 is high
(see the section on Q5). If it is, the system should then
determine again whether the toggle bit is toggling, since
the toggle bit may have stopped toggling just as Q5 went
If a program address f alls within a protected sector, Q6
toggles for approximately 2 us after the program com-
mand sequence is written, then returns to reading array
data.
Q6 also toggles during the erase-suspend-program mode,
and stops toggling once the Automatic Program algo-
rithm is complete.
Table 7 shows the outputs f or Toggle Bit I on Q6.
high. If the toggle bit is no longer toggling, the device
has successfully completed the program or erase op-
eration. If it is still toggling, the device did not complete
the operation successfully, and the system must wr ite
the reset command to return to reading array data.
The remaining scenario is that system initially determines
that the toggle bit is toggling and Q5 has not gone high.
The system may continue to monitor the toggle bit and
Q5 through successive read cycles, determining the sta-
tus as described in the previous paragraph. Alterna-
tively, it may choose to perform other system tasks. In
this case, the system must start at the beginning of the
algorithm when it returns to determine the status of the
operation.
Exceeded Timing Limits
Q5 will indicate if the program or erase time has ex-
ceeded the specified limits (internal pulse count). Under
these conditions Q5 will produce a "1". This time-out
condition indicates that the program or erase cycle was
not successfully completed. Data Polling and Toggle Bit
are the only operating functions of the device under this
condition.
If this time-out condition occurs during sector erase op-
eration, it specifies that a particular sector is bad and it
may not be reused. However , other sectors are still func-
tional and may be used for the program or erase opera-
tion. The device must be reset to use other sectors.
Write the Reset command sequence to the device, and
then execute program or erase command sequence. This
allows the system to continue to use the other active
sectors in the device.
If this time-out condition occurs during the chip erase
operation, it specifies that the entire chip is bad or com-
bination of sectors are bad.
If this time-out condition occurs during the byte program-
ming operation, it specifies that the entire sector con-
taining that byte is bad and this sector maynot be re-
used, (other sectors are still functional and can be re-
used).
The time-out condition will not appear if a user tries to
program a non blank location without erasing. Please
note that this is not a device failure condition since the
device was incorrectly used.
Q5
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Q3
Sector Erase Timer
After the completion of the initial sector erase command
sequence, the sector erase time-out will begin. Q3 will
remain low until the time-out is complete. Data P olling
and T oggle Bit are valid after the initial sector erase com-
mand sequence.
If Data P olling or the Toggle Bit indicates the device has
been written with a valid erase command, Q3 may be
used to determine if the sector erase timer window is
still open. If Q3 is high ("1") the internally controlled
erase cycle has begun; attempts to write subsequent
commands to the device will be ignored until the erase
operation is completed as indicated by Data Polling or
Toggle Bit. If Q3 is low ("0"), the device will accept
additional sector erase commands. To insure the com-
mand has been accepted, the system software should
check the status of Q3 prior to and following each sub-
sequent sector erase command. If Q3 were high on the
second status check, the command may not have been
accepted.
DATA PROTECTION
The MX29LV401T/B is designed to offer protection
against accidental erasure or programming caused by
spurious system level signals that may exist during power
transition. During power up the device automatically re-
sets the state machine in the Read mode. In addition,
with its control register architecture, alteration of the
memory contents only occurs after successful comple-
tion of specific command sequences. The device also
incorporates several features to prevent inadvertent write
cycles resulting from VCC power-up and power-down tran-
sition or system noise.
WRITE PULSE "GLITCH" PROTECTION
Noise pulses of less than 5ns(typical) on CE or WE will
not initiate a write cycle.
LOGICAL INHIBIT
Writing is inhibited by holding an y one of OE = VIL, CE
= VIH or WE = VIH. To initiate a write cycle CE and WE
must be a logical zero while OE is a logical one.
POWER SUPPLY DECOUPLING
In order to reduce power switching effect, each device
should have a 0.1uF ceramic capacitor connected be-
tween its VCC and GND .
POWER-UP SEQUENCE
The MX29LV401T/B powers up in the Read only mode .
In addition, the memory contents may only be altered
after successful completion of the predefined command
sequences.
TEMPORARY SECTOR UNPROTECT
This feature allows temporary unprotection of previously
protected sector to change data in-system. The Tempo-
rary Sector Unprotect mode is activated by setting the
RESET pin to VID(11.5V -12.5V). During this mode, for-
merly protected sectors can be programmed or erased
as un-protected sector. Once VID is remove from the
RESET pin, all the previously protected sectors are pro-
tected again.
SECTOR PROTECTION
The MX29LV401T/B features hardware sector protec-
tion. This feature will disable both program and erase
operations f or these sectors protected. To activate this
mode, the programming equipment must force VID on
address pin A9 and OE (suggest VID = 12V). Program-
ming of the protection circuitry begins on the falling edge
of the WE pulse and is ter minated on the r ising edge.
Please refer to sector protect algorithm and waveform.
To verify programming of the protection circuitry , the pro-
gramming equipment must force VID on address pin A9
( with CE and OE at VIL and WE at VIH). When A1=VIH,
A0=VIL, A6=VIL, it will produce a logical "1" code at
de vice output Q0 f or a protected sector . Otherwise the
device will produce 00H for the unprotected sector. In
this mode, the addresses, except for A1, are don't care.
Address locations with A1 = VIL are reser ved to read
manufacturer and device codes.(Read Silicon ID)
It is also possible to determine if the sector is protected
in the system by writing a Read Silicon ID command.
P erforming a read operation with A1=VIH, it will produce
a logical "1" at Q0 f or the protected sector.
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CHIP UNPROTECT
The MX29LV401T/B also features the chip unprotect
mode, so that all sectors are unprotected after chip
unprotect is completed to incorporate any changes in the
code. It is recommended to protect all sectors before
activating chip unprotect mode.
To activate this mode, the programming equipment must
force VID on control pin OE and address pin A9. The CE
pins must be set at VIL. Pins A6 must be set to VIH.(see
Table 2) Refer to chip unprotect algorithm and waveform
for the chip unprotect algorithm. The unprotection
mechanism begins on the falling edge of the WE pulse
and is terminated on the rising edge.
It is also possible to determine if the chip is unprotected
in the system by writing the Read Silicon ID command.
Performing a read operation with A1=VIH, it will produce
00H at data outputs(Q0-Q7) for an unprotected sector.
It is noted that all sectors are unprotected after the chip
unprotect algorithm is completed.
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ABSOLUTE MAXIMUM RATINGS
Storage T emperature
Plastic Packages . . . . . . . . . . . . . ..... -65oC to +150oC
Ambient Temperature
with Power Applied. . . . . . . . . . . . . .... -65oC to +125oC
V oltage with Respect to Ground
VCC (Note 1) . . . . . . . . . . . . . . . . . -0.5 V to +4.0 V
A9, OE, and
RESET (Note 2) . . . . . . . . . . . ....-0.5 V to +12.5 V
All other pins (Note 1) . . . . . . . -0.5 V to VCC +0.5 V
Output Short Circuit Current (Note 3) . . . . . . 200 mA
Notes:
1. Minimum DC v oltage on input or I/O pins is -0.5 V.
During voltage transitions, input or I/O pins may over-
shoot VSS to -2.0 V for per iods of up to 20 ns. See
Figure 6. Maximum DC voltage on input or I/O pins is
VCC +0.5 V. Dur ing voltage transitions, input or I/O
pins may overshoot to VCC +2.0 V for periods up to
20 ns.
2. Minimum DC input voltage on pins A9, OE, and
RESET is -0.5 V. During v oltage transitions, A9, OE,
and RESET may overshoot VSS to -2.0 V for periods
of up to 20 ns. See Figure 6. Maximum DC input volt-
age on pin A9 is +12.5 V which may overshoot to
14.0 V for periods up to 20 ns.
3. No more than one output may be shorted to ground at
a time. Duration of the short circuit should not be
greater than one second.
Stresses above those listed under "Absolute Maximum
Rat-ings" may cause permanent damage to the device.
This is a stress rating only; functional operation of the
device at these or any other conditions above those in-
dicated in the operational sections of this data sheet is
not implied. Exposure of the device to absolute maxi-
mum rating conditions for extended periods may affect
device reliability.
OPERATING RATINGS
Commercial (C) Devices
Ambient Temperature (TA ) . . . . . . . . . . . . 0 °C to +70°C
Industrial (I) Devices
Ambient Temperature (TA ) . . . . . . . . . . - 4 0°C to +85°C
VCC Supply Voltages
VCC for regulated voltage range . . . . . +3.0 V to 3.6 V
VCC for full voltage range. . . . . . . . . . . +2.7 V to 3.6 V
Operating ranges define those limits between which the
functionality of the device is guaranteed.
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Table 8. CAPACITANCE TA = 25 oC, f = 1.0 MHz
SYMBOL PARAMETER MIN. TYP MAX. UNIT CONDITIONS
CIN1 Input Capacitance 8 pF VIN = 0V
CIN2 Control Pin Capacitance 12 pF VIN = 0V
COUT Output Capacitance 12 pF VOUT = 0V
NOTES:
1.VIL min. = -1.0V for pulse width is equal to or less than 50 ns.
VIL min. = -2.0V for pulse width is equal to or less than 20 ns.
2.VIH max. = VCC + 1.5V for pulse width is equal to or less than 20 ns
If VIH is over the specified maximum value, read operation cannot be guaranteed.
3.Automatic sleep mode enable the low power mode when addresses remain stable for tACC +30ns.
Symbol PARAMETER MIN. TYP MAX. UNIT CONDITIONS
ILI Input Leakage Current ± 1 uA VIN = VSS to VCC
ILIT A9 Input Leakage Current 3 5 uA VCC=VCC max; A9=12.5V
ILO Output Leakage Current ± 1 uA VOUT = VSS to VCC, VCC=VCC max
ICC1 VCC Active Read Current 7 1 2 mA CE=VIL, OE=VIH @5MHz
2 4 mA (Byte Mode) @1MHz
7 12 mA CE=VIL, OE=VIH @5MHz
2 4 mA (Word Mode) @1MHz
ICC2 VCC Active write Current 1 5 3 0 mA CE=VIL, OE=VIH
ICC3 VCC Standby Current 0.2 5 uA CE; RESET=VCC ± 0.3V
ICC4 VCC Standby Current 0.2 5 uA RESET=VSS ± 0.3V
During Reset
ICC5 Automatic sleep mode 0.2 5 uA VIH=VCC ± 0.3V;VIL=VSS ± 0.3V
VIL Input Low Voltage(Note 1) -0.5 0.8 V
VIH Input High Voltage 0.7xVCC VCC+ 0.3 V
VID Voltage for Automatic
Select and Temporary 11.5 12.5 V VCC=3.3V
Chip Unprotect
VOL Output Low Voltage 0.45 V IOL = 4.0mA, VCC= VCC min
VOH1 Output High Voltage(TTL) 0.85xVCC IOH = -2mA, VCC=VCC min
VOH2 Output High Voltage VCC-0.4 IOH = -100uA, VCC min
(CMOS)
Table 9. DC CHARACTERISTICS TA = -40oC TO 85oC, VCC = 2.7V to 3.6V
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29LV401T/B-70 29LV401T/B-90
SYMBOL PARAMETER MIN. MAX. MIN. MAX. UNIT CONDITIONS
tRC Read Cycle Time (Note 1) 7 0 9 0 ns
tACC Address to Output Delay 7 0 9 0 ns CE=OE=VIL
tCE CE to Output Delay 70 90 ns OE=VIL
tOE OE to Output Delay 30 35 ns CE=VIL
tDF OE High to Output Float (Note1) 0 25 0 3 0 n s CE=VIL
tOEH Output Enable Read 0 0 ns
Hold Time Toggle and 10 1 0 ns
Data Polling
tOH Address to Output hold 0 0 ns CE=OE=VIL
NOTE:
1. Not 100% tested.
2. tDF is defined as the time at which the output achieves
the open circuit condition and data is no longer driven.
TEST CONDITIONS:
• Input pulse levels: 0V/3.0V.
• Input rise and fall times is equal to or less than 5ns.
• Output load: 1 TTL gate + 100pF (Including scope and
jig), for MX29LV401T/B-90. 1 TTL gate + 30pF
(Including scope and jig) for MX29LV401T/B-70.
• Reference levels for measuring timing: 1.5V.
AC CHARACTERISTICS TA = -40oC to 85oC, VCC = 2.7V~3.6V
Table 10. READ OPERATIONS
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Figure 1. SWITCHING TEST CIRCUITS
Figure 2. SWITCHING TEST WAVEFORMS
TEST POINTS
3.0V
0V
AC TESTING: Inputs are driven at 3.0V for a logic "1" and 0V for a logic "0".
Input pulse rise and fall times are < 5ns.
OUTPUT
1.5V1.5V
INPUT
DEVICE UNDER
TEST
DIODES=IN3064
OR EQUIVALENT
CL 6.2K ohm
2.7K ohm +3.3V
CL=100pF Including jig capacitance
CL=30pF for MX29LV401T/B-70
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Figure 3. READ TIMING WAVEFORMS
Addresses
CE
OE
tACC
WE
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VOH
VOL
VIH
VIL
HIGH Z HIGH Z
D ATA V alid
tOE
tOEH tDF
tCE
tACC
tRC
Outputs
RESET
tOH
ADD V alid
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AC CHARACTERISTICS TA = -40oC to 85oC, VCC = 2.7V~3.6V
Table 11. Erase/Program Operations
29L V401T/B-70 29LV401T/B-90
SYMBOL PARAMETER MIN. MAX. MIN. MAX. UNIT
tWC Write Cycle Time (Note 1) 7 0 9 0 ns
tAS Address Setup Time 0 0 ns
tAH Address Hold Time 4 5 45 ns
tDS Data Setup Time 3 5 4 5 ns
tDH Data Hold Time 0 0 ns
tOES Output Enable Setup Time 0 0 ns
tGHWL Read Recovery Time Before Write 0 0 ns
(OE High to WE Low)
tCS CE Setup Time 0 0 ns
tCH CE Hold Time 0 0 ns
tWP Write Pulse Width 3 5 3 5 ns
tWPH Write Pulse Width High 3 0 3 0 ns
tWHWH1 Programming Operation (Note 2) 9/11(TYP.) 9/11(TYP.) us
(Byte/Word program time)
tWHWH2 Sector Erase Operation (Note 2) 0.7(TYP.) 0.7(TYP.) sec
tVCS VCC Setup Time (Note 1) 5 0 5 0 us
tRB Recovery Time from RY/BY 0 0 ns
tBUSY Program/Erase Vaild to RY/BY Delay 9 0 9 0 us
NOTES:
1. Not 100% tested.
2. See the "Erase and Programming P erformance" section for more inf ormation.
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29LV401T/B-70 29LV401T/B-90
SYMBOL PARAMETER MIN. MAX. MIN. MAX. UNIT
tWC Write Cycle Time (Note 1) 7 0 7 0 ns
tAS Address Setup Time 0 0 ns
tAH Address Hold Time 4 5 4 5 ns
tDS Data Setup Time 3 5 4 5 ns
tDH Data Hold Time 0 0 ns
tOES Output Enable Setup Time 0 0 ns
tGHEL Read Recovery Time Before Write 0 0 ns
tWS WE Setup Time 0 0 ns
tWH WE Hold Time 0 0 ns
tCP CE Pulse Width 3 5 3 5 ns
tCPH CE Pulse Width High 30 30 ns
tWHWH1 Programming Byte 9(Typ.) 9(Typ.) us
Operation(note2) W ord 11(Typ.) 11(Typ.) us
tWHWH2 Sector Erase Operation (note2) 0.7(Typ.) 0.7(Typ.) sec
NOTE:
1. Not 100% tested.
2. See the "Erase and Programming P erformance" section for more inf ormation.
AC CHARACTERISTICS TA = -40oC to 85oC, VCC = 2.7V~3.6V
Table 12. Alternate CE Controlled Erase/Program Operations
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Figure 4. COMMAND WRITE TIMING WAVEFORM
Addresses
CE
OE
WE
DIN
tDS
tAH
Data
tDH
tCS tCH
tCWC
tWPH
tWP
tOES
tAS
VCC
3V
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
ADD V alid
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AUTOMATIC PROGRAMMING TIMING
Figure 5. AUTOMATIC PROGRAMMING TIMING WAVEFORM
WAVEFORM
One byte data is programmed. Verify in fast algorithm
and additional verification by external control are not re-
quired because these operations are executed automati-
cally by internal control circuit. Programming comple-
tion can be verified by DA TA polling and toggle bit checking
after automatic programming starts. Device outputs
DA TA during programming and D A TA after programming
on Q7.(Q6 is f or toggle bit; see toggle bit, D ATA polling,
timing waveform)
tWC
Address
OE
CE
A0h
555h PA
PD Status DOUT
PA PA
NOTES:
1.PA=Program Address, PD=Program Data, DOUT is the true data the program address
tAS
tAH
tGHWL
tCH
tWP
tDS tDH
tWHWH1
Read Status Data (last two cycle)Program Command Sequence(last two cycle)
tBUSY tRB
tCS tWPH
tVCS
WE
Data
RY/BY
VCC
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Figure 6. AUTOMATIC PROGRAMMING ALGORITHM FLOWCHART
START
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Program Data/Address
Write Data A0H Address 555H
YES
Verify Word Ok ?
YES
Auto Program Completed
Data Poll
from system
Increment
Address
Last Address ?
No
No
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Figure 7. CE CONTROLLED PROGRAM TIMING W A VEFORM
tWC
tWH
tGHEL
tWHWH1 or 2
tCP
Address
WE
OE
CE
Data DQ7
PA
Data Polling
DOUT
RESET
RY/BY
NOTES:
1.PA=Program Address, PD=Program Data, DOUT=Data Out, DQ7=complement of data written to device.
2.Figure indicates the last two bus cycles of the command sequence.
tAH
tAS
PA for program
SA for sector erase
555 for chip erase
tRH
tDH
tDS
tWS
A0 for program
55 for erase
tCPH
tBUSY
PD for program
30 for sector erase
10 for chip erase
555 for program
2AA for erase
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All data in chip are erased. External erase verification is
not required because data is verified automatically by
internal control circuit. Erasure completion can be veri-
fied by DATA polling and toggle bit checking after auto-
matic erase starts. Device outputs 0 during erasure
and 1 after erasure on Q7.(Q6 is for toggle bit; see toggle
bit, D ATA polling, timing waveform)
Figure 8. AUTOMATIC CHIP ERASE TIMING WAVEFORM
AUTOMATIC CHIP ERASE TIMING WAVEFORM
tWC
Address
OE
CE
55h
2AAh 555h
10h
In
Progress Complete
VA VA
NOTES:
SA=sector address(for Sector Erase), VA=Valid Address for reading status data(see "Write Operation Status").
tAS
tAH
tGHWL
tCH
tWP
tDS tDH
tWHWH2
Read Status Data Erase Command Sequence(last two cycle)
tBUSY tRB
tCS tWPH
tVCS
WE
Data
RY/BY
VCC
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Figure 9. AUTOMATIC CHIP ERASE ALGORITHM FLOWCHART
START
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data AAH Address 555H
Write Data 80H Address 555H
YES
NO Data=FFh ?
Write Data 10H Address 555H
Write Data 55H Address 2AAH
Data Pall from System
Auto Chip Erase Completed
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Figure 10. AUTOMATIC SECTOR ERASE TIMING WAVEFORM
Sector indicated by A12 to A17 are erased. External
erase verify is not required because data are verified
automatically by internal control circuit. Erasure comple-
tion can be verified by DAT A polling and toggle bit check-
ing after automatic erase starts. Device outputs 0 dur-
ing erasure and 1 after erasure on Q7.(Q6 is for toggle
bit; see toggle bit, D ATA polling, timing wav eform)
AUTOMATIC SECTOR ERASE TIMING WAVEFORM
tWC
Address
OE
CE
55h
2AAh SA
30h In
Progress Complete
VA VA
NOTES:
SA=sector address(for Sector Erase), VA=Valid Address for reading status data(see "Write Operation Status").
tAS
tAH
tGHWL
tCH
tWP
tDS tDH
tWHWH2
Read Status Data Erase Command Sequence(last two cycle)
tBUSY tRB
tCS tWPH
tVCS
WE
Data
RY/BY
VCC
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Figure 11. AUTOMATIC SECTOR ERASE ALGORITHM FLOWCHART
START
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data AAH Address 555H
Write Data 80H Address 555H
Write Data 30H Sector Address
Write Data 55H Address 2AAH
Data Poll from System
Auto Sector Erase Completed
NO
Last Sector
to Erase
YES
YES
NO
Data=FFh
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Figure 12. ERASE SUSPEND/ERASE RESUME FLOWCHART
START
Write Data B0H
Toggle Bit checking Q6
not toggled
ERASE SUSPEND
YES
NO
Write Data 30H
Continue Erase
Reading or
Programming End
Read Array or
Program
Another
Erase Suspend ? NO
YES
YES
NO
ERASE RESUME
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Figure 13. IN-SYSTEM SECTOR PROTECT/UNPROTECT TIMING WAVEFORM (RESET Control)
Sector Protect =150us
Sector Unprotect =15ms
1us
VID
VIH
Data
SA, A6
A1, A0
CE
WE
OE
Valid* Valid*
Status
Valid*
Sector Protect or Sector Unprotect
40h60h60h
Verify
RESET
Note: When sector protect, A6=0, A1=1, A0=0. When sector unprotect, A6=1, A1=1, A0=0.
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tOE
Data
OE
WE
12V
3V
12V
3V
CE
A9
A1
A6
tOESP
tWPP 1
tVLHT
tVLHT
tVLHT
Verify
01H F0H
A18-A12 Sector Address
Figure 14. SECTOR PROTECT TIMING WAVEFORM(A9, OE Control)
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Figure 15. SECTOR PROTECTION ALGORITHM (A9, OE Control)
START
Set Up Sector Addr
PLSCNT=1
Sector Protection
Complete
Data=01H?
Yes
.
OE=VID,A9=VID,CE=VIL
A6=VIL
Activate WE Pulse
Time Out 150us
Set WE=VIH, CE=OE=VIL
A9 should remain VID
Read from Sector
Addr=SA, A1=1
Protect Another
Sector?
Remove VID from A9
Write Reset Command
Device Failed
PLSCNT=32?
Yes
No
No
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Figure 16. IN-SYSTEM SECTOR PROTECTION ALGORITHM WITH RESET=VID
START
PLSCNT=1
First Write
Cycle=60H
Yes
No
RESET=VID
Wait 1us
Set up sector address
Write 60H to sector address
with A6=0, A1=1, A0=0
Verify sector protect :
write 40H with A6=0,
A1=1, A0=0
Wait 150us
Increment PLSCNT
Read from sector address
Remove VID from RESET
Temporary Sector
Unprotect Mode
Reset PLSCNT=1
Data=01H
Yes
Yes
Yes
No
No
No
?
PLSCNT=25?
Protect another
sector?
Write reset command
Sector protect complete
Device failed
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Figure 17. IN-SYSTEM SECTOR UNPROTECTION ALGORITHM WITH RESET=VID
START
PLSCNT=1
First Write
Cycle=60H ?
Yes
No
RESET=VID
Wait 1us
Set up first sector address
Sector unprotect :
write 60H with
A6=1, A1=1, A0=0
Verify sector unprotect
write 40H to sector address
with A6=1, A1=1, A0=0
Wait 50ms
Increment PLSCNT
Read from sector address
with A6=1, A1=1, A0=0
Remove VID from RESET
Temporary Sector
Unprotect Mode
Set up next sector address
All sector
protected?
Yes
Data=00H
Yes
Yes
Yes
No
No
No
No Protect all sectors
?
PLSCNT=1000?
Last sector
verified?
Write reset command
Sector unprotect complete
Device failed
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Figure 18. TIMING WAVEFORM FOR CHIP UNPROTECTION (A9, OE Control)
tOE
Data
OE
WE
12V
3V
12V
3V
CE
A9
A1
tOESP
tWPP 2
tVLHT
tVLHT
tVLHT
Verify
00H
A6
Sector Address
A17-A12
F0H
Notes: tWPP1 (Write pulse width for sector protect)=100ns min.
tWPP2 (Write pulse width for sector unprotect)=100ns min.
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Figure 19. CHIP UNPROTECTION ALGORITHM (A9, OE Control)
START
Protect All Sectors
PLSCNT=1
Chip Unprotect
Complete
Data=00H?
Yes
Set OE=A9=VID
CE=VIL,A6=1
Activate WE Pulse
Time Out 50ms
Set OE=CE=VIL
A9=VID,A1=1
Set Up First Sector Addr
All sectors have
been verified?
Remove VID from A9
Write Reset Command
Device Failed
PLSCNT=1000?
No
Increment
PLSCNT
No
Read Data from Device
Yes
Yes
No
Increment
Sector Addr
* It is recommended before unprotect whole chip, all sectors should be protected in advance.
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Figure 20. DATA POLLING ALGORITHM
WRITE OPERATION STATUS
Read Q7~Q0
Add.=VA(1)
Read Q7~Q0
Add.=VA
Start
Q7 = Data ?
Q5 = 1 ?
Q7 = Data ?
FAIL Pass
No
No
(2)
No
Yes
Yes
Yes
NOTE : 1.VA=Valid address for programming
2.Q7 should be re-checked even Q5="1" because Q7 may change
simultaneously with Q5.
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Figure 21. TOGGLE BIT ALGORITHM
Read Q7-Q0
Read Q7-Q0
Q5= 1?
Read Q7~Q0 Twice
Program/Erase Operation
Not Complete,Write
Reset Command
Program/Erase
operation Complete
Toggle bit Q6=
Toggle?
Toggle Bit Q6 =
Toggle ? NO
(Note 1)
(Note 1,2)
YES
NO
NO
YES
YES
Note:1.Read toggle bit twice to determine whether or not it is toggling.
2. Recheck toggle bit because it may stop toggling as Q5 change to "1".
Start
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Figure 22. DATA POLLING TIMINGS (DURING AUTOMATIC ALGORITHMS)
RY/BY
NOTES:
VA=Valid address. Figure shows are first status cycle after command sequence, last status read cycle, and array data read cycle.
tDF
tCE
tACC
tRC
tCH tOE
tOEH
tOH
tBUSY
Address
CE
OE
WE
DQ7
Q0-Q6
Status Data Status Data
Complement Complement Valid DataTrue
VAVAVA
High Z
High Z
Valid DataTrue
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Figure 23. TOGGLE BIT TIMING WAVEFORMS (DURING AUTOMATIC ALGORITHMS)
NOTES:
VA=Valid address; not required for Q6. Figure shows first two status cycle after command sequence, last status read cycle, and
array data read cycle.
tDF
tCE
tACC
tRC
tCH
tOE
tOEH
tBUSY
High Z
tOH
Address
CE
OE
WE
Q6/Q2
RY/BY
Valid Status
(first raed)
Valid Status
(second read) (stops toggling)
Valid Data
VA VA
VA
VA
Valid Data
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Figure 24. RESET TIMING WAVEFORM
Table 13. AC CHARACTERISTICS
Parameter Std Description T est Setup All Speed Options Unit
tREAD Y1 RESET PIN Low (During Automatic Algorithms) MAX 2 0 us
to Read or Write (See Note)
tREAD Y2 RESET PIN Low (NOT During Automatic MAX 5 00 ns
Algorithms) to Read or Write (See Note)
tRP RESET Pulse Width (During Automatic Algorithms) MIN 500 ns
tRH RESET High Time Before Read(See Note) MIN 5 0 ns
tRB R Y/BY Recov ery Time(to CE, OE go low) MIN 0 ns
Note:Not 100% tested
tRH
tRB
tReady1
tRP
tRP
tReady2
RY/BY
CE, OE
RESET
Reset Timing NOT during Automatic Algorithms
Reset Timing during Automatic Algorithms
RY/BY
CE, OE
RESET
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Figure 25. BYTE TIMING WAVEFORM FOR READ OPERATIONS (BYTE switching from byte
mode to word mode)
tFHQV
tELFH
DOUT
(Q0-Q7) DOUT
(Q0-Q14)
VA DOUT
(Q15)
CE
OE
BYTE
Q0~Q14
Q15/A-1
AC CHARACTERISTICS
WORD/BYTE CONFIGURATION (BYTE)
Parameter Description Speed Options Unit
JEDEC Std -70 -90
tELFL/tELFH CE to BYTE Switching Low or High Max 5 ns
tFLQZ BYTE Switching Low to Output HIGH Z Max 2 5 30 ns
tFHQV BYTE Switching High to Output Active Mi n 70 90 ns
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Figure 26. BYTE TIMING WAVEFORM FOR READ OPERATIONS (BYTE switching from word
mode to byte mode)
Figure 27. BYTE TIMING WAVEFORM FOR PROGRAM OPERATIONS
tAS tAH
The falling edge of the last WE signal
CE
WE
BYTE
tFLQZ
tELFH
DOUT
(Q0-Q7)
DOUT
(Q0-Q14)
VA
DOUT
(Q15)
CE
OE
BYTE
Q0~Q14
Q15/A-1
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Table 14. TEMPORARY SECTOR UNPROTECT
Parameter Std. Description Test Setup All Speed Options Unit
tVIDR VID Rise and F all Time (See Note) Mi n 5 00 ns
tRSP RESET Setup Time for T emporary Sector Unprotect Min 4 us
Note:
Not 100% tested
Figure 28. TEMPORARY SECTOR UNPROTECT TIMING DIAGRAM
RESET
CE
WE
RY/BY
tVIDR tVIDR
Program or Erase Command Sequence
12V
0 or Vcc 0 or Vcc
tRSP
Figure 29. Q6 vs Q2 for Erase and Erase Suspend Operations
NOTES:
The system can use OE or CE to toggle Q2/Q6, Q2 toggles only when read at an address within an erase-suspended
WE
Enter Embedded
Erasing Erase
Suspend Enter Erase
Suspend Program
Erase
Suspend
Program
Erase Suspend
Read Erase
Erase
Resume
Erase
Complete
Erase
Q6
Q2
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Figure 30. TEMPORAR Y SECTOR UNPROTECT ALGORITHM
Start
RESET = VID (Note 1)
Perform Erase or Program Operation
RESET = VIH
Temporary Sector Unprotect Completed(Note 2)
Note : 1. All protected sectors are temporary unprotected.
VID=11.5V~12.5V
2. All previously protected sectors are protected again.
Operation Completed
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Figure 31. ID CODE READ TIMING WAVEFORM
tACC
tCE
tACC
tOE
tOH tOH
tDF
DATA OUT
C2H/00C2H B9H/BAH (Byte)
22B9H/22BAH (Word)
VID
VIH
VIL
ADD
A9
ADD
A2-A8
A10-A17
CE
OE
WE
ADD
A0
DATA OUT
DATA
Q0-Q15
VCC
A1
3V
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
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MIN. MAX.
Input Voltage with respect to GND on all pins except I/O pins -1.0V 12.5V
Input Voltage with respect to GND on all I/O pins -1.0V Vcc + 1.0V
Current -100mA +100mA
Includes all pins except Vcc. Test conditions: Vcc = 3.0V, one pin at a time.
LIMITS
PARAMETER MIN. TYP.(2) MAX.(3) UNITS
Sector Erase Time 0.7 15 s ec
Chip Erase Time 1 1 sec
Byte Programming Time 9 30 0 us
Word Programming Time 11 36 0 us
Chip Programming Time Byte Mode 4.5 13.5 sec
Word Mode 3 9 sec
Erase/Program Cycles 100,000 Cycles
Table 16. LATCH-UP CHARACTERISTICS
Table 15. ERASE AND PROGRAMMING PERFORMANCE(1)
Note: 1.Not 100% Tested, Excludes external system lev el o ver head.
2.Typical values measured at 25 °C , 3V.
3.Maximum v alues measured at 25°C , 2.7V.
Table 17. DATA RETENTION
Parameter Description Test Conditions Min Unit
150°C 10 Years
Data Retention Time 125°C 20 Years
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ORDERING INFORMATION
PLASTIC PACKAGE
PART NO . ACCESS TIME OPERATING CURRENT ST ANDBY CURRENT PACKAGE
(ns) MAX.(mA) MAX.(uA)
MX29L V401TMC-70 70 30 5 44 Pin SOP
MX29LV401BMC-70 7 0 30 5 44 Pin SOP
MX29LV401TMC-90 9 0 3 0 5 44 Pin SOP
MX29LV401BMC-90 9 0 30 5 44 Pin SOP
MX29LV401TTC-70 7 0 3 0 5 48 Pin TSOP
(Normal Type)
MX29LV401BTC-70 7 0 3 0 5 48 Pin TSOP
(Normal Type)
MX29LV401TTC-90 9 0 3 0 5 48 Pin TSOP
(Normal Type)
MX29LV401BTC-90 9 0 3 0 5 48 Pin TSOP
(Normal Type)
MX29LV401TXBC-70 70 30 5 48 Ball CSP
MX29LV401BXBC-70 7 0 30 5 48 Ball CSP
MX29LV401TXBC-90 9 0 3 0 5 48 Ball CSP
MX29LV401BXBC-90 9 0 30 5 48 Ball CSP
MX29LV401TMI-70 7 0 3 0 5 44 Pin SOP
MX29LV401BMI-70 7 0 3 0 5 44 Pin SOP
MX29LV401TMI-90 9 0 3 0 5 44 Pin SOP
MX29LV401BMI-90 9 0 3 0 5 44 Pin SOP
MX29LV401TTI-70 7 0 3 0 5 48 Pin TSOP
(Normal Type)
MX29LV401BTI-70 7 0 3 0 5 48 Pin TSOP
(Normal Type)
MX29LV401TTI-90 9 0 3 0 5 48 Pin TSOP
(Normal Type)
MX29LV401BTI-90 9 0 3 0 5 48 Pin TSOP
(Normal Type)
MX29LV401TXBI-70 70 30 5 48 Ball CSP
MX29LV401TXBI-90 9 0 3 0 5 48 Ball CSP
MX29LV401BXBI-70 7 0 3 0 5 48 Ball CSP
MX29LV401BXBI-90 9 0 3 0 5 48 Ball CSP
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PACKAGE INFORMATION
48-PIN PLASTIC TSOP
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44-PIN PLASTIC SOP
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48-Ball CSP
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REVISION HISTORY
Revision No. Description Page Date
0.1 1. To cancel the VLKO function & spec. P1,19 APR/18/2002
2. To modify table 3. Autoselect Mode Operation P6
3. To added data retention information P1,51
MX29LV401T/B
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