CSH210P - Target Dat asheet (Re v 3, 02/01) 1
GaAs MMIC CSH210P
• TX-RX and diversity switch for mobile
communications
• GaAs PHEMT Technology
• Low Insertion Loss
• High IP3
• No supply Voltage needed
• Positive Operating voltage r ange: 2.7 to 5 V
• SOT363 package (2mm x 2mm)
ESD: Electrostatic discharge sensitive device
Observe handling Precautions!
Target Datasheet
Type Marking Ordering code
(tape and reel) Package
CSH210P TBD TBD SOT363
Maximum Ratings Symbol Value Unit
min max
Control Voltage Range -5 5 V
RF Input Power Pin 4.5 W
Therm al Resistance Rth tbd °C/W
Junction Temperatur e Tj125 °C
Storag e Temperature Tstg -55 150 °C
CSH210P - Target Dat asheet (Re v 3, 02/01) 2
GaAs MMIC CSH210P
Electrical Characteristics (T=25 C, Vcntrl=3.0V, Pin= 0dBm )
Parameter Symbol Test
Condition
min typ max Unit
Insertion Loss RFC-RF1, RFC-RF2 ILRF DC-0.5GHz
DC-1.0GHz
DC-2.0GHz
DC-3.0GHz
0.35
0.35
0.4
0.55
0.4
0.5
0.7
0.75
dB
Isolation R F1-RF2 ISOL DC-0.5G H z
DC-1.0GHz
DC-2.0GHz
DC-3.0GHz
20
20
15
14
30
25
22.5
19
dB
VSWR* (all ports) VSWR DC-2.5GHz
DC-3.0GHz 1.3:1
1.55:1
Harmonics (Pin = 30 dBm) Pharm DC-3.0GHz -56 -60 dBc
Gate Leakage IL0.1 mA
Trise /Tfall (10% RF to 90%RF) tbd nS
Ton/Toff (50% CNTRL -90%/10%RF) tbd nS
Input Power for 0.1 dB compression P-0.1 DC-3.0GHz tbd dBm
Input Power for 1 dB compression P1 DC-3.0GHz 33 dBm
Intermodulation Intercept Point IP3 Pin=27dBm
Freq.=1.0GHz 56 dBm
* VSWR defined for Insertion Loss State only
CSH210P - Target Dat asheet (Re v 3, 02/01) 3
GaAs MMIC CSH210P
Electrical Characteristics (T=25 C, Vcntrl=5.0V, Pin= 0dBm )
Parameter Symbol Test
Condition
min typ max Unit
Insertion Loss RFC-RF1, RFC-RF2 ILRF DC-0.5GHz
DC-1.0GHz
DC-2.0GHz
DC-3.0GHz
0.35
0.35
0.4
0.55
0.4
0.5
0.7
0.75
dB
Isolation R F1-RF2 ISOL DC-0.5G H z
DC-1.0GHz
DC-2.0GHz
DC-3.0GHz
20
20
15
14
30
25
22.5
19
dB
VSWR* (all ports) VSWR DC-2.5GHz
DC-3.0GHz 1.3:1
1.55:1
Harmonics (Pin = 30 dBm) Pharm DC-3.0GHz -61 -62 dBc
Gate Leakage IL0.1 mA
Trise /Tfall (10% RF to 90%RF) tbd nS
Ton/Toff (50% CNTRL -90%/10%RF) tbd nS
Input Power for 0.1 dB compression P-0.1 DC-3.0GHz tbd dBm
Input Power for 1 dB compression P1 DC-3.0GHz 34 dBm
Intermodulation Intercept Point IP3 Pin=30dBm
Freq.=1.0GHz 57 dBm
* VSWR defined for Insertion Loss State only
CSH210P - Target Dat asheet (Re v 3, 02/01) 4
GaAs MMIC CSH210P
PIN Symbol Abbreviation Description
1 RF OU TPUT 1 RF1 RF OU TPUT
2 GND GND Circuit comm on and DC return
3 RF OU TPUT 2 RF2 RF OU TPUT
4 V_C ON TR OL 2 V2 RF O U TPU T 2 control
5 RF C O M MO N R F C Com m on R F port
6 V_C ON TR OL 1 V1 RF O U TPU T 1 control
PIN Assignments & Functional Block Diagram
*external DC blocking capacitor required 100p F 3 p la ces
V1 V2 Through Path
3V 0V RFC – RF1
0V 3V RFC – RF2
Standard Control Logic
1
2
3
6
4
5
V1
V2
RFC
RF1
RF2
GND
CSH210P - Target Dat asheet (Re v 3, 02/01) 5
GaAs MMIC CSH210P
Measured Results
(All Ports connected to 50ohms, Pin=0dBm unless otherwise specified)
Insertion Loss vs. Frequency
-1
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
0.00 0.50 1.00 1.50 2.00 2.50 3.00
Frequency (GHz)
Insertion Loss (dB)
Isolati on vs. Freque nc y
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
0.00 0.50 1.00 1.50 2.00 2.50 3.00
Frequency (GHz)
Isolation (dB)
Input VSWR vs. Frequency
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
0.00 0.50 1.00 1.50 2.00 2.50 3.00
Frequency (GHz)
VSWR
Output VS WR vs. Frequency
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
0.00 0.50 1.00 1.50 2.00 2.50 3.00
Frequency (GH z )
VSWR
(RFC - RF1, RFC - RF2) (RF1 - RF2)
(RFC) (RF1 or RF2)
CSH210P - Target Dat asheet (Re v 3, 02/01) 6
GaAs MMIC CSH210P
Package Outline - SOT363
Recommended SOT363 Solder Footprint
CSH210P - Target Dat asheet (Re v 3, 02/01) 7
GaAs MMIC CSH210P
Evaluation Board Layout
Board Size 0.75” x 1.75 ”
Board Thickness 0.047”, Board Material FR4 Multi-Layer
Infineon Technologies
CSH210 V2.0
V2
V1
CSH210P - Target Dat asheet (Re v 3, 02/01) 8
GaAs MMIC CSH210P
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53 St.-Martin-Street, D-81541 Munich, Germany
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The information describes the type of component and shall not be considered as assured
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