2N6790 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/555 DESCRIPTION This 2N6790 device is military qualified up to a JANTXV level for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES * JEDEC registered 2N6790. * JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/555. * RoHS compliant versions available (commercial grade only). TO-205AF (formerly TO-39) Package APPLICATIONS / BENEFITS * * * Also available in: High frequency operation. Lightweight package. ESD to class 1A. U-18 LCC Package (surface mount) 2N6790U MAXIMUM RATINGS @ T C = +25 C unless otherwise noted Parameters / Test Conditions Symbol Junction & Storage Temperature Thermal Resistance Junction-to-Case Drain to Gate Voltage Drain - Source Voltage Gate - Source Voltage Continuous Drain Current @ TC = +25 C Continuous Drain Current @ TC = +100 C (1) Off-State Power Dissipation Source Current - Drain Diode (Forward Biased V SD ) Off-State Current (2) Drain to Source On State Resistance TJ , Tstg R JC V DG V DS V GS I D1 I D2 P D1 IS I DM r DS(on) Value Unit -55 to +150 6.25 200 200 20 3.5 2.25 20 3.5 14 0.80 C C/W V V V A A W A A (pk) Notes: 1. Derated linearly by 0.16 W/C for T C > +25 C. 2. V GS = 10 V, I D = 2.25 A. MSC - Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC - Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0229, Rev. 1 (120717) (c)2012 Microsemi Corporation Page 1 of 6 2N6790 MECHANICAL and PACKAGING * * * * * * CASE: Hermetically sealed, kovar base, nickel cap. TERMINALS: Tin/lead solder dip nickel plate or RoHS compliant pure tin (commercial grade only) plate. MARKING: Part number, date code, manufacturer's ID. POLARITY: NPN (see package outline). WEIGHT: Approximately 1.064 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N6790 (e3) Reliability Level JAN=JAN level JANTX=JANTX level JANTXV=JANTXV level Blank = Commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant JEDEC type number SYMBOLS & DEFINITIONS Definition Symbol ID IF TC V DD V DS V GS Drain current. Forward current. Case temperature. Drain supply voltage. Drain to source voltage. Gate to source voltage. T4-LDS-0229, Rev. 1 (120717) (c)2012 Microsemi Corporation Page 2 of 6 2N6790 ELECTRICAL CHARACTERISTICS @ T A = +25 C, unless otherwise noted Parameters / Test Conditions Symbol Min. Drain-Source Breakdown Voltage V GS = 0 V, I D = 1 mA V (BR)DSS 200 Gate-Source Voltage (Threshold) V DS V GS , I D = 0.25 mA V DS V GS , I D = 0.25 mA, Tj = +125 C V DS V GS , I D = 0.25 mA, Tj = -55 C V GS(th)1 V GS(th)2 V GS(th)3 2.0 1.0 Gate Current V GS = 20 V, V DS = 0 V V GS = 20 V, V DS = 0 V, Tj = +125 C I GSS1 I GSS2 Max. Unit OFF CHARACTERTICS V 4.0 V 5.0 100 200 nA Max. Unit I DSS1 I DSS2 25 0.25 A mA Static Drain-Source On-State Resistance V GS = 10 V, I D = 2.25 A pulsed r DS(on)1 0.80 V GS = 10 V, I D = 3.5 A pulsed r DS(on)2 0.85 T j = +125 C: V GS = 10 V, I D = 2.25 A pulsed r DS(on)3 1.50 V SD 1.5 V Max. Unit 14.3 3.0 9.0 nC Max. Unit t d(on) tr t d(off) tf 40 50 50 50 ns t rr 400 ns Parameters / Test Conditions Symbol Min. ON CHARACTERTICS Drain Current V GS = 0V, V DS = 160 V V GS = 0V, V DS = 160 V, Tj = +125 C Diode Forward Voltage V GS = 0 V, I D = 3.5 A pulsed V GS = 0 V, I D = 2.8 A pulsed DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Gate Charge: On-State Gate Charge Gate to Source Charge Gate to Drain Charge Q g(on) Q gs Q gd SWITCHING CHARACTERISTICS Parameters / Test Conditions Switching time tests: Turn-on delay time Rinse time Turn-off delay time Fall time Reverse Recovery Time: T4-LDS-0229, Rev. 1 (120717) Symbol I D = 3.5A, V GS = 10 V Gate drive impedance = 7.5 , V DD = 74 V di/dt = 100 A/s, V DD 50 V, I F = 3.5 A (c)2012 Microsemi Corporation Min. Page 3 of 6 2N6790 THERMAL RESPONSE (ZJC) GRAPHS t 1 , RECTANGULAR PULSE DURATION (SECONDS) ID DRAIN CURRENT (AMPERES) Figure 1 Thermal Impedance Curves T C CASE TEMPERATURE (C) Figure 2 Maximum Drain Current vs. Case Temperature Graph T4-LDS-0229, Rev. 1 (120717) (c)2012 Microsemi Corporation Page 4 of 6 2N6790 ID DRAIN CURRENT (AMPERES) GRAPHS (continued) V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 3 Maximum Safe Operating Area T4-LDS-0229, Rev. 1 (120717) (c)2012 Microsemi Corporation Page 5 of 6 2N6790 PACKAGE DIMENSIONS Ltr Dimensions Inches Millimeters Notes Min Max Min Max CD .305 .335 7.75 8.51 CH .160 .180 4.07 4.57 HD .335 .370 8.51 9.40 h .009 .041 0.23 1.04 J .028 .034 0.71 0.86 3 k .029 .045 0.74 1.14 3, 4 LD .016 .021 0.41 0.53 7, 8 LL .500 .750 12.7 19.05 7, 8, 12 LS LU .200 TP .016 L1 .019 5.08 TP 0.41 .050 0.48 1.27 L2 .250 6.35 P .100 2.54 6 7, 8 7, 8 7, 8 Q .050 1.27 5 r .010 45 TP 0.25 45 TP 10 6 SCHEMATIC CIRCUIT NOTES: 1. 2. 3. 4. 5. 6. Dimensions are in inches. Millimeters are given for general information only. Beyond r (radius) maximum, TL shall be held for a minimum length of .011 inch (0.28 mm). Dimension TL measured from maximum HD. Body contour optional within zone defined by HD, CD, and Q. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. 7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 8. All three leads. 9. The collector shall be internally connected to the case. 10. Dimension r (radius) applies to both inside corners of tab. 11. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 12. Lead 1 = source, lead 2 = gate, lead 3 = drain. T4-LDS-0229, Rev. 1 (120717) (c)2012 Microsemi Corporation Page 6 of 6