NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Parameter ITSP
A
ITSM
A
di/dt
A/µs
Waveshape 2/10 1.2/50, 8/20 10/160 5/320 10/560 10/1000 1 cycle 60 Hz 2/10 Wavefront
Value 500 300 250 200 160 100 60 400
TISP4xxxH3BJ Overvoltage Protector Series
TISP4070H3BJ THRU TISP4115H3BJ,
TISP4125H3BJ THRU TISP4220H3BJ,
TISP4240H3BJ THRU TISP4400H3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Summary Current Ratings
Summary Electrical Characteristics
This TISP® device series protects central office, access and customer premise equipment against overvoltages on the telecom line. The
TISP4xxxH3BJ is available in a wide range of voltages and has a high current capability, allowing minimal series resistance to be used. These
protectors have been specified mindful of the following standards and recommendations: GR-1089-CORE, FCC Part 68, UL1950, EN 60950,
IEC 60950, ITU-T K.20, K.21 and K.45. The TISP4350H3BJ meets the FCC Part 68 “B” ringer voltage requirement and survives the Type A and
B impulse tests. These devices are housed in a surface mount SMB (DO-214AA) package.
TISP4xxxH3BJ Overview
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
*RoHS COMPLIANT
Part # VDRM
V
V(BO)
V
VT @ IT
V
IDRM
µA
I(BO)
mA
IT
A
IH
mA
Co @ -2 V
pF
Functionally
Replaces
TISP4070H3 58 70 3 5 600 5 150 120 P0640SC†
TISP4080H3 65 80 3 5 600 5 150 120 P0720SC†
TISP4095H3 75 95 3 5 600 5 150 120 P0900SC†
TISP4115H3 90 115 3 5 600 5 150 120 P1100SC†
TISP4125H3 100 125 3 5 600 5 150 65
TISP4145H3 120 145 3 5 600 5 150 65 P1300SC†
TISP4165H3 135 165 3 5 600 5 150 65
TISP4180H3 145 180 3 5 600 5 150 65 P1500SC
TISP4200H3 155 200 3 5 600 5 150 65
TISP4220H3 160 220 3 5 600 5 150 65 P1800SC
TISP4240H3 180 240 3 5 600 5 150 55
TISP4250H3 190 250 3 5 600 5 150 55 P2300SC†
TISP4265H3 200 265 3 5 600 5 150 55
TISP4290H3 220 290 3 5 600 5 150 55 P2600SC†
TISP4300H3 230 300 3 5 600 5 150 55
TISP4350H3 275 350 3 5 600 5 150 55 P3100SC
TISP4395H3 320 395 3 5 600 5 150 55 P3500SC
TISP4400H3 300 400 3 5 600 5 150 55
† Bourns part has an improved protection voltage
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
T
R
SD4XAA
Terminals T and R correspond to the
alternative line designators of A and B
Device Symbol
Device VDRM
V
V(BO)
V
‘4070 58 70
‘4080 65 80
‘4095 75 95
‘4115 90 115
‘4125 100 125
‘4145 120 145
‘4165 135 165
‘4180 145 180
‘4200 155 200
‘4220 160 220
‘4240 180 240
‘4250 190 250
‘4265 200 265
‘4290 220 290
‘4300 230 300
‘4350 275 350
‘4395 320 395
‘4400 300 400
Low Differential Capacitance ...................................67 pF max.
12
T(A)R(B)
MDXXBG
How To Order
SMBJ Package (Top View)
Description
ITU-T K.20/21 Rating . . . . . . . . . . . . . 8 kV 10/700, 200 A 5/310
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
Rated for International Surge Wave Shapes
TISP4xxxH3BJ Overvoltage Protector Series
Waveshape Standard ITSP
A
2/10 µs GR-1089-CORE 500
8/20 µs IEC 61000-4-5 300
10/160 µs FCC Part 68 250
10/700 µs ITU-T K.20/21 200
10/560 µs FCC Part 68 160
10/1000 µs GR-1089-CORE 100
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning
flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used
for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of
devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the
current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current helps prevent d.c. latchup as
the diverted current subsides.
This TISP4xxxH3BJ range consists of eighteen voltage variants to meet various maximum system voltage levels (58 V to 320 V). They are
guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These high (H) current protection devices
are in a plastic package SMBJ (JEDEC DO-214AA with J-bend leads) and supplied in embossed carrier reel pack. For alternative voltage and
holding current values, consult the factory. For lower rated impulse currents in the SMB package, the 50 A 10/1000 TISP4xxxM3BJ series is
available.
............................................... UL Recognized Component
Device Package Carrier Order As
TISP4xxxH3BJ BJ (J-Bend DO-214AA/SMB) Embossed Tape Reeled
Bulk Pack
Insert xxx value corresponding to protection voltages of 070, 080, 095, 115 etc.
TISP4xxxH3BJR-S
TISP4xxxH3BJ-S
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH3BJ Overvoltage Protector Series
Rating Symbol Value Unit
Repetitive peak off-state voltage, (see Note 1)
‘4070
‘4080
‘4095
‘4115
‘4125
‘4145
‘4165
‘4180
‘4200
‘4220
‘4240
‘4250
‘4265
‘4290
‘4300
‘4350
‘4395
‘4400
VDRM
± 58
± 65
± 75
± 90
±100
±120
±135
±145
±155
±160
±180
±190
±200
±220
±230
±275
±320
±300
V
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
ITSP A
2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape) 500
8/20 µs (IEC 61000-4-5, 1.2/50 µs voltage, 8/20 current combination wave generator) 300
10/160 µs (FCC Part 68, 10/160 µs voltage wave shape) 250
5/200 µs (VDE 0433, 10/700 µs voltage wave shape) 220
0.2/310 µs (I3124, 0.5/700 µs voltage wave shape) 200
5/310 µs (ITU-T K.20/21, 10/700 µs voltage wave shape) 200
5/310 µs (FTZ R12, 10/700 µs voltage wave shape) 200
10/560 µs (FCC Part 68, 10/560 µs voltage wave shape) 160
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape) 100
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
ITSM
55
60
2.1
A
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 200 A diT/dt 400 A/µs
Junction temperature TJ-40 to +150 °C
Storage temperature range Tstg -65 to +150 °C
NOTES: 1. See Applications Information and Figure 10 for voltage values at lower temperatures.
2. Initially, the TISP4xxxH3BJ must be in thermal equilibrium with TJ=25°C.
3. The surge may be repeated after the TISP4xxxH3BJ returns to its initial conditions.
4. See Applications Information and Figure 11 for current ratings at other temperatures.
5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/°C for ambient
temperatures above 25 °C.
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted)
TISP4xxxH3BJ Overvoltage Protector Series
Parameter Test Conditions Min. Typ. Max. Unit
IDRM Repetitive peak off-
state current VD = VDRM TA = 25 °C
TA = 85 °C
±5
±10 µA
V(BO) Breakover voltage dv/dt = ±750 V/ms, RSOURCE = 300
‘4070
‘4080
‘4095
‘4115
‘4125
‘4145
‘4165
‘4180
‘4200
‘4220
‘4240
‘4250
‘4265
‘4290
‘4300
‘4350
‘4395
‘4400
±70
±80
±95
±115
±125
±145
±165
±180
±200
±220
±240
±250
±265
±290
±300
±350
±395
±400
V
V(BO) Impulse breakover
voltage
dv/dt ≤ ±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
‘4070
‘4080
‘4095
‘4115
‘4125
‘4145
‘4165
‘4180
‘4200
‘4220
‘4240
‘4250
‘4265
‘4290
‘4300
‘4350
‘4395
‘4400
±78
±88
±103
±124
±134
±154
±174
±189
±210
±230
±250
±261
±276
±301
±311
±362
±408
±413
V
I(BO) Breakover current dv/dt = ±750 V/ms, RSOURCE = 300 ±0.15 ±0.6 A
VTOn-state voltage IT=±5A, t
W= 100 µs±3V
IHHolding current IT=±5A, di/dt=-/+30mA/ms ±0.15 ±0.6 A
dv/dt Critical rate of rise of
off-state voltage Linear voltage ramp, Maximum ramp value < 0.85VDRM ±5kV/µs
IDOff-state current VD=±50 V TA = 85 °C±10 µA
Ω
Ω
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted) (continued)
TISP4xxxH3BJ Overvoltage Protector Series
Coff Off-state capacitance
f = 100 kHz, Vd=1V rms, V
D=0,
f = 100 kHz, Vd=1V rms, V
D=-1V
f = 100 kHz, Vd=1V rms, V
D=-2V
f = 100 kHz, Vd=1V rms, V
D=-50V
f = 100 kHz, Vd=1V rms, V
D= -100 V
(see Note 6)
‘4070 thru ‘4115
‘4125 thru ‘4220
‘4240 thru ‘4400
‘4070 thru ‘4115
‘4125 thru ‘4220
‘4240 thru ‘4400
‘4070 thru ‘4115
‘4125 thru ‘4220
‘4240 thru ‘4400
‘4070 thru ‘4115
‘4125 thru ‘4220
‘4240 thru ‘4400
‘4125 thru ‘4220
‘4240 thru ‘4400
145
80
70
130
71
60
120
65
55
62
30
24
28
22
170
90
84
150
79
67
140
74
62
73
35
28
33
26
pF
NOTE 6: To avoid possible voltage clipping, the ‘4125 is tested with VD=-98V.
Parameter Test Conditions Min. Typ. Max. Unit
Thermal Characteristics
Parameter Test Conditions Min. Typ. Max. Unit
RθJA Junction to free air thermal resistance
EIA/JESD51-3 PCB, IT = ITSM(1000),
TA = 25 °C, (see Note 7) 113
°C/W
265 mm x 210 mm populated line card,
4-layer PCB, IT = ITSM(1000), TA = 25 °C50
NOTE 7: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Parameter Measurement Information
TISP4xxxH3BJ Overvoltage Protector Series
Figure 1. Voltage-current Characteristic for T and R Terminals
All Measurements are Referenced to the R Terminal
-v VDRM
IDRM
VD
IH
IT
VT
ITSM
ITSP
V(BO)
I(BO)
ID
Quadrant I
Switching
Characteristic
+v
+i
V(BO)
I(BO)
VD
ID
IH
IT
VT
ITSM
ITSP
-i
Quadrant III
Switching
Characteristic PMXXAAB
VDRM
IDRM
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Typical Characteristics
TISP4xxxH3BJ Overvoltage Protector Series
Figure 2. Figure 3.
Figure 4. Figure 5.
TJ - Junction Temperature - °C
-25 0 25 50 75 100 125 150
|ID| - Off-State Current - µA
0·001
0·01
0·1
1
10
100 TCHAG
VD = ±50 V
TJ - Junction Temperature - °C
-25 0 25 50 75 100 125 150
Normalized Breakover Voltage
0.95
1.00
1.05
1.10 TC4HAF
VT - On-State Voltage - V
0.7 1.5 2 3 4 5 7110
IT - On-State Current - A
1.5
2
3
4
5
7
15
20
30
40
50
70
150
200
1
10
100
TA = 25 °C
tW = 100 µs
TC4HACB
'4240
THRU
'4400
'4070
THRU
'4115
'4125
THRU
'4220
TJ - Junction Temperature - °C
-25 0 25 50 75 100 125 150
Normalized Holding Current
0.4
0.5
0.6
0.7
0.8
0.9
1.5
2.0
1.0
TC4HAD
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
NORMALIZED HOLDING CURRENT
vs
JUNCTION TEMPERATURE
NORMALIZED BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Typical Characteristics
TISP4xxxH3BJ Overvoltage Protector Series
Figure 6. Figure 7.
VD - Off-state Voltage - V
0.5 1 2 3 5 10 20 30 50 100150
Capacitance Normalized to VD = 0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
TJ = 25 °C
Vd = 1 Vrms
TC4HABB
'4125 THRU '4220
'4240 THRU '4400
'4070 THRU '4115
VDRM - Repetitive Peak Off-State Voltage - V
50 60 70 80 90 150 200 250 300100
C - Differential Off-State Capacitance - pF
30
35
40
45
50
55
60
65
70
75
C = Coff(-2 V) - Coff(-50 V)
'4070
'4080
'4095
'4125
'4145
'4165
'4180
'4265
'4300
'4350
'4400
'4200
'4240
'4115
'4220
'4250
'4290
'4395
TCHAEB
NORMALIZED CAPACITANCE
vs
OFF-STATE VOLTAGE
DIFFERENTIAL OFF-STATE CAPACITANCE
vs
RATED REPETITIVE PEAK OFF-STATE VOLTAGE
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Rating and Thermal Information
TISP4xxxH3BJ Overvoltage Protector Series
Figure 8. Figure 9.
Figure 10. Figure 11.
t - Current Duration - s
0·1 1 10 100 1000
ITSM(t) - Non-Repetitive Peak On-State Current - A
1.5
2
3
4
5
6
7
8
9
15
20
30
10
TI4HAC
VGEN = 600 Vrms, 50/60 Hz
RGEN = 1.4*VGEN/ITSM(t)
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB
TA = 25 °C
t - Power Duration - s
0·1 1 10 100 1000
ZθJA(t) - Transient Thermal Impedance - °C/W
1.5
2
3
4
5
7
15
20
30
40
50
70
150
1
10
100
TI4HAE
ITSM(t) APPLIED FOR TIME t
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB
TA = 25 °C
TAMIN - Minimum Ambient Temperature - °C
-35 -25 -15 -5 5 15 25-40 -30 -20 -10 0 10 20
Derating Factor
0.93
0.94
0.95
0.96
0.97
0.98
0.99
1.00 TI4HADB
'4240 THRU '4440
'4070 THRU '4115
'4125 THRU '4220
TA - Ambient Temperature - °C
-40-30-20-100 1020304050607080
Impulse Current - A
90
100
120
150
200
250
300
400
500
600
700
IEC 1.2/50, 8/20
ITU-T 10/700
FCC 10/560
BELLCORE 2/10
BELLCORE 10/1000
FCC 10/160
TC4HAA
NON-REPETITIVE PEAK ON-STATE CURRENT
vs
CURRENT DURATION
VDRM DERATING FACTOR
vs
MINIMUM AMBIENT TEMPERATURE
IMPULSE RATING
vs
AMBIENT TEMPERATURE
THERMAL IMPEDANCE
vs
POWER DURATION
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Deployment
APPLICATIONS INFORMATION
Impulse Testing
TISP4xxxH3BJ Overvoltage Protector Series
These devices are two terminal overvoltage protectors. They may be used either singly to limit the voltage between two conductors (Figure 12)
or in multiples to limit the voltage at several points in a circuit (Figure 13).
In Figure 12, protector Th1 limits the maximum voltage between the two conductors to ±V(BO). This configuration is normally used to protect
circuits without a ground reference, such as modems. In Figure 13, protectors Th2 and Th3 limit the maximum voltage between each conduc-
tor and ground to the ±V(BO) of the individual protector. Protector Th1 limits the maximum voltage between the two conductors to its ±V(BO)
value. If the equipment being protected has all its vulnerable components connected between the conductors and ground, then protector Th1
is not required.
To verify the withstand capability and safety of the equipment, standards require that the equipment is tested with various impulse wave forms.
The table below shows some common values.
If the impulse generator current exceeds the protector’s current rating, then a series resistance can be used to reduce the current to the
protector’s rated value to prevent possible failure. The required value of series resistance for a given waveform is given by the following
calculations. First, the minimum total circuit impedance is found by dividing the impulse generator’s peak voltage by the protector’s rated
current. The impulse generator’s fictive impedance (generators peak voltage divided by peak short circuit current) is then subtracted from the
minimum total circuit impedance to give the required value of series resistance. In some cases, the equipment will require verification over a
temperature range. By using the rated waveform values from Figure 11, the appropriate series resistor value can be calculated for ambient
temperatures in the range of -40 °C to 85 °C.
Figure 12. Two Point Protection Figure 13. Multi-point Protection
Th1
Th3
Th2
Th1
Standard
Peak Voltage
Setting
V
Voltage
Waveform
µs
Peak Current
Value
A
Current
Waveform
µs
TISP4xxxH3
25 °C Rating
AΩ
Series
Resistance
GR-1089-CORE 2500 2/10 500 2/10 500 0
1000 10/1000 100 10/1000 100
FCC Part 68
(March 1998)
1500 10/160 200 10/160 250 0
800 10/560 100 10/560 160 0
1500 9/720 † 37.5 5/320 † 200 0
1000 9/720 † 25 5/320 † 200 0
I3124 1500 0.5/700 37.5 0.2/310 200 0
ITU-T K.20/K.21 1500
4000 10/700 37.5
100 5/310 200 0
† FCC Part 68 terminology for the waveforms produced by the ITU-T recommendation K.21 10/700 impulse generator
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
The protector can withstand currents applied for times not exceeding those shown in Figure 8. Currents that exceed these times must be
terminated or reduced to avoid protector failure. Fuses, PTC (Positive Temperature Coefficient) resistors and fusible resistors are overcurrent
protection devices which can be used to reduce the current flow. Protective fuses may range from a few hundred milliamperes to one ampere.
In some cases, it may be necessary to add some extra series resistance to prevent the fuse opening during impulse testing. The current versus
time characteristic of the overcurrent protector must be below the line shown in Figure 8. In some cases, there may be a further time limit
imposed by the test standard (e.g. UL 1459 wiring simulator failure).
AC Power Testing
Capacitance
APPLICATIONS INFORMATION
Normal System Voltage Levels
TISP4xxxH3BJ Overvoltage Protector Series
The protector characteristic off-state capacitance values are given for d.c. bias voltage, VD, values of 0, -1 V, -2 V and -50 V. Where possible,
values are also given for -100 V. Values for other voltages may be calculated by multiplying the VD = 0 capacitance value by the factor given in
Figure 6. Up to 10 MHz, the capacitance is essentially independent of frequency. Above 10 MHz, the effective capacitance is strongly
dependent on connection inductance. In many applications, such as Figure 15 and Figure 17, the typical conductor bias voltages will be about
-2 V and -50 V. Figure 7 shows the differential (line unbalance) capacitance caused by biasing one protector at -2 V and the other at -50 V.
The protector should not clip or limit the voltages that occur in normal system operation. For unusual conditions, such as ringing without the
line connected, some degree of clipping is permissible. Under this condition, about 10 V of clipping is normally possible without activating the
ring trip circuit.
Figure 10 allows the calculation of the protector VDRM value at temperatures below 25 °C. The calculated value should not be less than the
maximum normal system voltages. The TISP4265H3BJ, with a VDRM of 200 V, can be used for the protection of ring generators producing
100 V r.m.s. of ring on a battery voltage of -58 V (Th2 and Th3 in Figure 17). The peak ring voltage will be 58 + 1.414*100 = 199.4 V. However,
this is the open circuit voltage and the connection of the line, and its equipment will reduce the peak voltage. In the extreme case of an
unconnected line, clipping the peak voltage to 190 V should not activate the ring trip. This level of clipping would occur at the temperature
when the VDRM has reduced to 190/200 = 0.95 of its 25 °C value. Figure 10 shows that this condition will occur at an ambient temperature of
-22 °C. In this example, the TISP4265H3BJ will allow normal equipment operation provided that the minimum expected ambient temperature
does not fall below -22 °C.
JESD51 Thermal Measurement Method
To standardize thermal measurements, the EIA (Electronic Industries Alliance) has created the JESD51 standard. Part 2 of the standard
(JESD51-2, 1995) describes the test environment. This is a 0.0283 m3 (1 ft3) cube which contains the test PCB (Printed Circuit Board)
horizontally mounted at the center. Part 3 of the standard (JESD51-3, 1996) defines two test PCBs for surface mount components; one for
packages smaller than 27 mm (1.06 ’’) on a side and the other for packages up to 48 mm (1.89 ’’). The SMBJ measurements used the smaller
76.2 mm x 114.3 mm (3.0 ’’ x 4.5 ’’) PCB. The JESD51-3 PCBs are designed to have low effective thermal conductivity (high thermal resis-
tance) and represent a worse case condition. The PCBs used in the majority of applications will achieve lower values of thermal resistance and
so can dissipate higher power levels than indicated by the JESD51 values.
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Typical Circuits
TISP4xxxH3BJ Overvoltage Protector Series
Figure 14. Modem Inter-wire Protection Figure 15. Protection Module
Figure 16. ISDN Protection
Figure 17. Line Card Ring/Test Protection
FUSE
TISP4350
AI6XBMA
RING DETECTOR
HOOK SWITCH
D.C. SINK
SIGNAL
MODEM
RING
TIP
R1a
R1b
RING
WIRE
TIP
WIRE
Th3
Th2
Th1
PROTECTED
EQUIPMENT
E.G. LINE CARD
AI6XBK
R1a
R1b
Th3
Th2
Th1
AI6XBL
SIGNAL
D.C.
TEST
RELAY RING
RELAY SLIC
RELAY
TEST
EQUIP-
MENT RING
GENERATOR
S1a
S1b
R1a
R1b
RING
WIRE
TIP
WIRE
Th3
Th2
Th1
Th4
Th5
SLIC
SLIC
PROTECTION
RING/TEST
PROTECTION
OVER-
CURRENT
PROTECTION
S2a
S2b
S3a
S3b
VBAT
C1
220 nF
AI6XBJ
TISP6xxxx,
TISPPBLx,
1/2TISP6NTP2
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Recommended Printed Wiring Footprint
Device Symbolization Code
MECHANICAL DATA
Devices will be coded as below. As the device parameters are symmetrical, terminal 1 is not identified.
Devices are shipped in one of the carriers below. Unless a specific method of shipment is specified by the customer, devices will be shipped in
the most practical carrier. For production quantities, the carrier will be embossed tape reel pack. Evaluation quantities may be shipped in bulk
pack or embossed tape.
Carrier Information
TISP4xxxH3BJ Overvoltage Protector Series
SMB Pad Size
MDXXBI
METRIC
(INCHES)
DIMENSIONS ARE:
2.54
(0.10)
2.40
(0.09)
2.16
(0.09)
Carrier Order As
Embossed Tape Reeled
Bulk Pack
TISP4xxxH3BJR-S
TISP4xxxH3BJ-S
Device Symbolization
Code
TISP4070H3BJ 4070H3
TISP4080H3BJ 4080H3
TISP4095H3BJ 4095H3
TISP4115H3BJ 4115H3
TISP4125H3BJ 4125H3
TISP4145H3BJ 4145H3
TISP4165H3BJ 4165H3
TISP4180H3BJ 4180H3
TISP4200H3BJ 4200H3
TISP4220H3BJ 4220H3
TISP4240H3BJ 4240H3
TISP4250H3BJ 4250H3
TISP4265H3BJ 4265H3
TISP4290H3BJ 4290H3
TISP4300H3BJ 4300H3
TISP4350H3BJ 4350H3
TISP4395H3BJ 4395H3
TISP4400H3BJ 4400H3
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
