<< 2 N 5447 - 2 N 5448 Silizium-PNP-Epitaxial-Planar-NF-Transistoren Silicon PNP Epitaxial Planar AF Transistors Anwendungen: Treiber und Endstufen Applications: Driver and power stages Besondere Merkmale: Features: @ Verlustieistung 300 mW @ Power dissipation 300 mW Abmessungen in mm Dimensions in mm E Normgehause Case Hs 10 A3 DIN 41868 JEDEC TO 92 Z Gewicht - Weight max. 0,2 g Absolute Grenzdaten 2N 5447 2N 5448 Absolute maximum ratings Kollektor-Basis-Sperrspannung -Ucopo 40 50 Vv Collector-base voltage Kollektor-Emitter-Sperrspannung -UcEO 25 30 Vv Collector-emitter voltage Emitter-Basis-Sperrspannung UeEBo 5 Vv Emitter-base voltage Kollektorstrom -Io 200 mA Collector current Kollektorspitzenstrom Iom 600 mA Collector peak current Gesamtverlustleistung Total power dissipation lamb = 25C Prot 300 mw Sperrschichttemperatur qj 150 C Junction temperature Lagerungstemperaturbereich stg -55 ... +150 C Storage temperature range B 2/V.2. 559/0875 A 1 5292 N 5447 - 2 N 5448 W4armewiderstande Thermal resistances Sperrschicht-Umgebung Junction ambient Kenngr6Ben Characteristics lamb = 25C, falls nicht anders angegeben unless otherwise specified Kollektorreststrom Collector cut-off current 7 Ucg = 20 Vv Emitterreststrom Emitter cut-off current - Ueg =3V Kollektor-Basis-Durchbruchspannung Colfector-base breakdown voltage ~Ig = 100 pA *) AQL = 0,65% 530 2N 5447 2N 5448 TO2ST Th Min. Typ. Max. Rinsa 420 C/W - IeBo *) 100 nA leBo 100 nA -Uprycspo*) 40 v -UprycBo*) 50 v2 N 5447 - 2 N 5448 Kollektor-Emitter-Durchbruchspannung Collector-emitter breakdown voltage Ig = 10mA 2.N 5447 2 N 5448 Emitter-Basis-Durchbruchspannung Emitter-base breakdown voitage Ig = 100 pA Kollektor-Sattigungsspannung Collector saturation voltage Ig = 50 mA, -/p = 5mA Basis-Emitter-Spannung Base-emitter voltage - UcE =5V, -Io =50mA Kollektor-Basis-Gleichstromverhaltnis DC forward current transfer ratio - UcE =5 Vv, I =50mA 2N 5447 2N 5448 Transitfrequenz Gain bandwidth product Uge = 5V, Ie = 50 mA, f = 50 MHz Kollektor-Basis-Kapazitat Collector-base capacitance Ucp = 10V, f = 1 MHz t *) AQL = 0,65%, ') - = 0,01, ty = 0,3 ms Min. Typ. Max. -Upryceo*)) 25 V ~UBR)cEO*)') 30 Vv ~UpryeBo*) 5 Vv - UcEsat ') 250 mv - Uge) 0,6 1 Vv Age *)') 60 300 hee *)) 30 150 St 100 MHz CcBo 12 pF 531