INTERNATIONAL RECTIFIER Data Sheet No. PD-9.487C IgaR REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR 0 N-CHANNEL iIRFM150 2N7224 JANTXEN7224 JANTXVEANT7224 (REF: MIL-S-19500/592) 100 Volt, 0.07 Ohm HEXFET The HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies and virtually any apptication where military and/or high reliability is required. Product Summary Part Number | BVpgs Rpg(on) Ip IRFM150 100V 0.070 S4A FEATURES: H Repetitive Avalanche Rating @ Isolated and Hermetically Sealed @ Alternative to TO-3 Package @ Simple Drive Requirements @ Ease of Paralleling @ Ceramic Eyelets CASE STYLE AND DIMENSIONS 13.84 (0.545) 73.59 (0.535) . Cie 60 (0.260) , 4" 32 (0.249) ff van. 20.32 (0.800) 20.07 (0.790) BERYLLIA WARNING PER MIL-S-19500 SEE PAGE 1-308 |-301 .12 (0.008) ere ee 6.80 (0. 260) 3.78 (0.148) 13.84 (0,545) nepoed FEO NL DOOR TEC wy fF 0 20.32 (0.800) | ieee B07 oa 14, Ba (0, 548) ro 8 TOR i eee oF } 1 2 3 | t ail 35 (1,195) 1.14 (0.045) IT Pret.) a C3 ACL NCI LEGEND [ 0.25 (0-070) iC] 1 DRAW 2 SOURCE a GATE NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14,5M - 1882. 2+ ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). Contorms to JEDEC Outline TO-254AA* Dimensions in Millimeters and (Inches) *For leadtorm configurations see page I-308, fig. 15IRFM150, JANTXV, JANTX-, 2N7224 Devices Absolute Maximum Ratings Parameter 1AFM150, JANTXV, JANTX-, 2N7224 Units Ip @ Vgg = 10V, To = 25C Continuous Orain Current a Ip @ Veg = 10V, To = 100C Continuous Drain Current a A IDM Pulsed Drain Current 136 Pp @ Tc = 25C Max. Power Dissipation 150 Ww Linear Derating Factor 12 wk Vas Gate-to-Source Voltage +20 Vv Eas Single Pulse Avalanche Energy @ (seo 22, 1 mJ lan Avalanche Current 4 A (See Ear) Ear Repetitive Avalanche Energy @ (See ie 13) mJ avidt Peak Diode Recovery dv/dt G) 55 Vins (See Fig. 13) Ty Operating Junction -55 to 150 TstG Storage Temperature Range c Lead Temperature 300 (0.063 In. (1.4 mm) from case for 10s) Weight 9.3 (typical) Q Electrical Characteristics @ 1, = 25C (Untess Otherwiee Specitied) Parameter Min. Typ. Max. Units Test Conditions BVoss Drain-to-Source Breakdown Voltage 100 _ - v Ves = W,lip = 10 mA ABVogs/4Ty pongo voneee of - O13 - VviEC Reterence to 26C, Ip = 1.0 mA Posen Balk oom = [= [ow [og | vos=Win=eA g - - 0.081 Ves = 10. Ip = HA Vasithy Gate Threshold Voltage 29 - 49 v Vos = Vas: Ip = 250 pA ts Forward Transconductance 90 - _ S$ (a) Ypg = 15V, Ipg = 214 @ loss Zero Gate Voltage Drain Current - - 2 Vog = 08 x Max. Rating, Vag = OV = 250 #A Vos = 08 x Max. Rating Vag = Ty = 125C jess Gate-to-Source Leakage Forward - _ 100 nA Vas = 20V lass Gate-to-Source Leakage Reverse - - -100 Vag = -20V Qg Total Gate Charge 50 - 125 Vag = 10V, Ip = 34 Qgs + Gate-to-Source Charge 8 _ 22 nc Vps = 05 x Max. Rating Qoa Gate-to-Drain (Miller) Charge 18 - 6s See Fig. 6 and 14 ta(on) Turn-On Delay Time - - 35 Vop = 50V, Ip = 344, Ag = 2.360 t Rise Time _ - 190 ns tatoffy Turn-Ott Delay Time oo - 170 See Fig. 11 ty Fall Tima - ~_ 130 Lp Internal Drain Inductance - 87 - etre keer ee grain sowing Moser aymbol nH Package to center of die. inductances. o ts Internal Source inductance - a7 - Measured from the source lead, 6 mm (0.25 s souree bonding pad. Cigs Input Capacitance _ 3700 _ Ves = W, Vog = 25V Coss Output Capacitance - 1100 - oF t = 1.0 MHz Cras Reverse Transfer Capacitance ~ 200 - See Fig. Coc Drain-to-Case Capacitance - 12 - 1-302IRFM150, JANTXV, JANTX-, 2N7224 Devices Source-Drain Diode Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions is asf cores [= | & |, | see ngetezrmzaaroves re iaeoey Ee Igo Fulaad Source Current - - 136 & 4 Vsp __ Olode Forward Voltage - - 18 v Ty = 26C, Ig = 344, Vag = OV ter Fleverse Recovery Time _ 500 ns Ty = 25C, Ip = 34A, difdt < 100 Aus @ QrpR Reverse Recovery Charge - _ 29 Co Vop 3 50V ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Lg + Lo. Thermal Resistance Parameter Min. Tyo. Max. Units Test Conditions Rinic Junction-to-Case - - 0.83 Fincg Case-to-Sink - a2 - KAW @ | Mounting surface fiat, smooth, and greased Pinta Junction-to-Ambient - - 4g Typical socket mount @ Repetitive Rating; Pulse width limited by @ Igp = 344A, difdt = 70 Alps, KW = C maximum junction temperature (see figure 9) Rieter to current HEXFET valiabiity report ) Yop = BVpss, Ty = 150C WIK = WIG Suggested Rg = 2365 0 Ypp = 25, Starting Ty = 25C, P Noo WH a . on J @ Pulse width < 300 ps; Duty Cycle < 2% Peak IL = 344IRFM150, JANTXV, JANTX-, 2N7224 Devices a wn te te ir) rm & S = z & e if 1 ed & tr 5 5 oO oO z z os) me fe <= & & a 4.5V a eS 109 HH 20us PULSE WIDTH 20us PULSE WIDTH Te = 258C Tc = 150C 107! 10 101 407 10 Vog. DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vos. DRAIN~TO-SOURCE VOLTAGE (VOLTS) Fig. 1 Typical Output Characteristics, T = 25C Fig. 2 Typical Output Characteristics, Tc = 150C 2.5 2.0 DRAIN-TO SOUACE ON RESISTANCE (NORMALIZED) Ip, DRAIN CURRENT (AMPERES) = 0.5 Vog = 50V a 20us PULSE WIDTH = 3 ves = 10V 4 10 -80 -40 -20 0 20 40 60 80 100 120 140 160 Veg: GATE-TO-SOURCE VOLTAGE (VOLTS) Ty JUNCTION TEMPERATURE ( C ) Fig. 3 Typical Transfer Characteristics Fig. 4 Normalized On-Resistance Vs. Temperature 1-304IRFM150, JANTXV, JANTX-, 2N7224 Devices gg = OV. f = IMHz = Cgs + Cgg. Cgg SHORTED 6000 = Cog a Cag + a 2 sm Ww Ciss 5 S 4000 2 e . Qo s z 3000 5 a o 3 2 t 52000 w & oO 1000 ca Cogs > SEE FIGURE 14 Q 60 30 420 450 Vpg, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC) Fig. 5 Typical Capacitance Vs. Drain-to-Source Fig. 6 Typical Gate Charge Vs. Gate-to-Source Voltage Voltage wn OPERATION IN THIS AREA LIMITED Wy Fos (ON) Lu Q = = G a & a ut = x = & = a e w = x a & x oO oy z B Z to a => 2 en) a o oH T a Ty=1500C a Ves = OV SINGLE 0. 1. 4. . . 0 4 2 5 10 2 4 2 5 10? Vgp. SOURCE-TO-DRAIN VOLTAGE (VOLTS) Vps, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 7 Typical Source-Drain Diode Forward Voltage Fig. 8 Maximum Safe Operating Area 1-305IRFM150, JANTXV, JANTX., 2N7224 Devices 1.0 o SINGLE PULSE (THERMAL RESPONSE) in o mL rl ee] THEAMAL RESPONSE (Zip; ) NOTES: 4. DUTY FACTOR, D=t4i/t2 wo? 2. PEAK Ty =Pom x Zthic + Te 1075 40-4 1078 10 0.4 4 10 t4, RECTANGULAR PULSE DURATION (SECONDS) Fig. 9 Maximum Effective Transient Thermal imped J ion-to-Case Vs. Pulse Duration Rp Vos VA ee Pulse Width Sips Duty Factor <0.1% Fig. tia Switching Time Test Circuit Vos {[- 90% N | | Tp. ORAIN CURRENT (AMPEAES) | 10% {\ a, 25 50 75 100 126 450 Ves le | Tc. CASE TEMPERATURE ( C) t t t t dion) fr diotf) f Fig. 10 -- Maximum Drain Current Vs. Case Fig. 11b Switching Time Waveforms Temperature 1-306Vos. Vary tp to obtain required peak |, Fig. 12a Unclamped Inductive Test Circuit BYoss Vos |! Fig. 126 Unclamped Inductive Waveforms D.U.T, c+ Circuit Layout Considerations i + Low Stray Inductance %&) @ + Ground Plane + Low Leakage Inductance Current Transformer +<" - + dv/dt controlled by Rg * Driver same type as D.U.T. * Isp controlled by Duty Factor D" * D.U.T. Device Under Test IRFM150, + l- Yoo @ Inductor Current Eas, SINGLE PULSE ENERGY (UJ) JANTXV, JANTX-, 2N7224 Devices STARTING Ty, JUNCTION TEMPERATURE (C) Fig. 12 Maximum Avalanche Energy Vs. Starting @ Driver Gate Drive Period _+ Py. PW @ D.U.T. Isp Waveform Current @ D.U.T. Vpg Waveform __ Re- i Vottage Ripple < 5% Junction Temperature - Pw Period Reverse . Recovery| \ Body Diode Forward Current / dvidt Body Diode ) Forward Drop Diode Recove: on Vg = SV for Lagic Level Davices Fig. 13 Peak Diode Recovery dv/dt Test Circuit -3071RFM150, JANTXV, JANTX-, 2N7224 Devices _ Current Regulator [ Same Type { | as DUT. | : | | Too 3k2 i) 4)| \12 Tar | | | OSH fy ee ee - + D.U.T. T. 10V t Ves 14 Ve amaL lL Charge Io Io Current Sampling Resistors Fig. 14a Basic Gate Charge Waveform Fig. 146 Gate Charge Test Circult [eo 3.78 (0.149) 3-84 (0-548) 5 60 (0.260 = aoe BBV Fei oO 5.32 10.248) 1.27 (0.050) OU TOE 0) 17.40 (0.685) 20,32 (0,800) 16.89 (0.088) 2.07 0-75) (0.790) 13.84 0. wh ' 52 eo) 21.98 (0.865) 15.55 (6.355) 20.55 (0.025) i Le] fz) ft i 3114 (0.045) a TF 4.09 (0,190) aXe 4.01 (0.158) j : oe ae Teo) mm LEGEND 1 DRAIN ! 2 SOURCE 3 GATE NOTES: EXAMPLE: IRFM1500 (3.2) EXAMPLE: IRFM150U [o 0.500.020 GC ACL] [6 0.25-(9.010) GOI c| 1 DIMENSIONING & TOLERANCING PER ANSI 14.5M - 1982. 2 ALL DIMENSIONS ARE SHOWN IN MILLIMETERS {INCHES}. 3 LEADFORM IS AVAILABLE (tN EITHER ORIENTATION: Fig. 15 ~ Optional Leadforms for Outline TO-254 BERYLLIA WARNING PER MIL-S-19500 Packages containing berylils shall noi be ground, sandblasted, machined, or have other operstions performed on them which will produce beryilia ar berytiium dust. Furthermore, beryllium oxide packages shall not be pisced ia acide thst will produca umes containing beryllium. 1-308 Vos