BUZ 72AL SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated * Logic Level Pin 1 Pin 2 G D Pin 3 S Type VDS ID RDS(on) Package Ordering Code BUZ 72 AL 100 V 9A 0.25 TO-220 AB C67078-S1327-A3 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 25 C Values Unit A 9 Pulsed drain current IDpuls TC = 25 C 36 Avalanche current,limited by Tjmax IAR 10 Avalanche energy,periodic limited by Tjmax EAR 7.9 Avalanche energy, single pulse EAS mJ ID = 10 A, VDD = 25 V, RGS = 25 L = 885 H, Tj = 25 C 59 Gate source voltage VGS ESD-Sensitivity HBM as per MIL-STD 883 20 Class 1 Power dissipation W Ptot TC = 25 C 40 Operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC 3.1 Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 C K/W E IEC climatic category, DIN IEC 68-1 Data Sheet V 55 / 150 / 56 1 05.99 BUZ 72AL Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage 100 - - V GS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V V (BR)DSS 1.2 1.6 2 A IDSS VDS = 100 V, V GS = 0 V, Tj = 25 C - 0.1 1 VDS = 100 V, V GS = 0 V, Tj = 125 C - 10 100 Gate-source leakage current VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 RDS(on) VGS = 5 V, ID = 5 A Data Sheet nA IGSS - 2 0.15 0.25 05.99 BUZ 72AL Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance S gfs VDS 2 * ID * RDS(on)max, ID = 5 A Input capacitance 5 - 680 900 - 180 250 - 90 150 Crss VGS = 0 V, V DS = 25 V, f = 1 MHz Turn-on delay time pF Coss VGS = 0 V, V DS = 25 V, f = 1 MHz Reverse transfer capacitance - Ciss VGS = 0 V, V DS = 25 V, f = 1 MHz Output capacitance 7.5 ns td(on) VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Rise time - 20 30 - 85 130 - 100 130 - 55 70 tr VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Turn-off delay time td(off) VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Fall time tf VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Data Sheet 3 05.99 BUZ 72AL Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current A IS TC = 25 C Inverse diode direct current,pulsed - 36 V 1.2 1.5 ns trr - 180 nC Qrr VR = 30 V, IF=lS, diF/dt = 100 A/s Data Sheet - - VR = 30 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge 9 V SD VGS = 0 V, IF = 20 A Reverse recovery time - ISM TC = 25 C Inverse diode forward voltage - - 4 460 - 05.99 BUZ 72AL Power dissipation Ptot = (TC) Ptot Drain current ID = (TC) parameter: VGS 5 V 45 10 W A ID 35 8 7 30 6 25 5 20 4 15 3 10 2 5 0 0 1 0 20 40 60 80 100 120 C 160 0 20 40 60 80 100 120 TC C 160 TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 10 2 K/W t = 36.0s p A / D I 100 s ZthJC 10 1 V 10 0 DS (o n) = DS ID R 1 ms 10 -1 D = 0.50 0.20 10 ms 10 0 0.10 0.05 10 -2 0.02 DC 0.01 single pulse 10 -1 0 10 10 1 V 10 10 -3 -7 10 2 VDS Data Sheet 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 5 05.99 BUZ 72AL Typ. output characteristics ID = (VDS) parameter: tp = 80 s 20 Ptot = 40W Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS 0.80 l kj i h g a A VGS [V] ID 16 a 2.0 f b 2.5 c 3.0 d 3.5 e 4.0 f 4.5 g 5.0 h 5.5 i 6.0 j 7.0 14 12 e 10 8 6 b c d d k 8.0 l 10.0 RDS (on) 0.60 0.50 0.40 0.30 0.20 e 4 g fj i h 0 0.0 0.10 VGS [V] = c 2 a 3.0 2.0 2.5 0.00 0 ab 1.0 2.0 3.0 4.0 5.0 V 7.0 b 3.5 2 c 4.0 d 4.5 4 e f 5.0 5.5 6 8 g 6.0 10 h i j 7.0 8.0 10.0 12 VDS A 17 ID Typ. transfer characteristics ID = f (V GS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s parameter: tp = 80 s, VDS2 x ID x RDS(on)max V DS2 x ID x RDS(on)max 30 12 A S 26 ID 14 10 24 gfs 22 9 20 8 18 7 16 6 14 5 12 10 4 8 3 6 2 4 2 0 0 1 0 1 2 3 4 5 6 7 8 V 10 0 VGS Data Sheet 4 8 12 16 20 A 28 ID 6 05.99 BUZ 72AL Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 5 A, VGS = 5 V Gate threshold voltage VGS (th) = (Tj ) parameter: VGS = VDS, ID = 1 mA 0.80 4.6 V 4.0 RDS (on) 0.60 VGS(th) 3.6 3.2 0.50 2.8 2.4 0.40 98% 98% 2.0 typ 0.30 1.6 2% typ 0.20 1.2 0.8 0.10 0.4 0.00 -60 -20 20 60 100 C 0.0 -60 160 -20 20 60 100 C Tj 160 Tj Typ. capacitances Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s C = f (VDS) parameter:V GS = 0V, f = 1MHz 10 2 10 2 nF A IF C 10 1 10 1 Ciss Coss 10 0 10 0 Crss Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -1 0 5 10 15 20 25 30 V 10 -1 0.0 40 Data Sheet 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD VDS 7 05.99 BUZ 72AL Avalanche energy EAS = (Tj) parameter: ID = 10 A, VDD = 25 V RGS = 25 , L = 885 H Typ. gate charge VGS = (QGate) parameter: ID puls = 15 A 60 16 mJ V 50 EAS VGS 45 12 40 10 35 30 8 0,2 V DS max 0,8 VDS max 25 6 20 15 4 10 2 5 0 20 0 40 60 80 100 120 C 160 0 Tj 10 20 30 40 nC 55 Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj) 120 V 116 V(BR)DSS114 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 C 160 Tj Data Sheet 8 05.99