SLRS023D - DECEMBER 1976 - REVISED NOVEMBER 2004 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS D 500-mA Rated Collector Current (Single D D D D D SN75468 . . . D, N, OR NS PACKAGE SN75469 . . . D OR N PACKAGE (TOP VIEW) Output) High-Voltage Outputs . . . 100 V Output Clamp Diodes Inputs Compatible With Various Types of Logic Relay Driver Applications Higher-Voltage Versions of ULN2003A and ULN2004A, for Commercial Temperature Range 1B 2B 3B 4B 5B 6B 7B E 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 1C 2C 3C 4C 5C 6C 7C COM description/ordering information The SN75468 and SN75469 are high-voltage, high-current Darlington transistor arrays. Each consists of seven npn Darlington pairs that feature high-voltage outputs with common-cathode clamp diodes for switching inductive loads. The collector-current rating of each Darlington pair is 500 mA. The Darlington pairs may be paralleled for higher current capability. Applications include relay drivers, hammer drivers, lamp drivers, display drivers (LED and gas discharge), line drivers, and logic buffers. The SN75468 has a 2700- series base resistor for each Darlington pair for operation directly with TTL or 5-V CMOS. The SN75469 has a 10.5-k series base resistor to allow its operation directly with CMOS or PMOS that use supply voltages of 6 to 15 V. The required input current is below that of the SN75468. ORDERING INFORMATION PDIP (N) TOP-SIDE MARKING Tube of 25 SN75468N Tube of 40 SN75468D Reel of 2500 SN75468DR SOP (NS) Reel of 2000 SN75468NSR SN75468 PDIP (N) Tube of 25 SN75469N SN75469N Tube of 40 SN75469D Reel of 2500 SN75469DR SOIC (D) 0C 0 C to 70 70C C ORDERABLE PART NUMBER PACKAGE TA SOIC (D) SN75468N SN75468 SN75469 Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at www.ti.com/sc/package. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. Copyright 2004, Texas Instruments Incorporated !" #!$% &"' &! #" #" (" " ") !" && *+' &! #", &" ""%+ %!&" ", %% #""' POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 1 SLRS023D - DECEMBER 1976 - REVISED NOVEMBER 2004 logic diagram 9 1B 2B 3B 4B 5B 6B 7B 1 16 2 15 3 14 4 13 5 12 6 11 7 10 COM 1C 2C 3C 4C 5C 6C 7C schematic (each Darlington pair) COM C RB B SN75468: RB = 2.7 k SN75469: RB = 10.5 k 7.2 k 3 k All resistor values shown are nominal. 2 POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 E SLRS023D - DECEMBER 1976 - REVISED NOVEMBER 2004 absolute maximum ratings at 25C free-air temperature (unless otherwise noted) Collector-emitter voltage, VCE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V Input voltage, VI (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Peak collector current (see Figures 14 and 15) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA Output clamp current, IOK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA Total emitter-terminal current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.5 A Package thermal impedance, JA (see Notes 2 and 3): D package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73C/W N package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67C/W NS package . . . . . . . . . . . . . . . . . . . . . . . . . . . 64C/W Operating virtual junction temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150C Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65C to 150C Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. All voltage values are with respect to the emitter/substrate terminal E, unless otherwise noted. 2. Maximum power dissipation is a function of TJ(max), JA, and TA. The maximum allowable power dissipation at any allowable ambient temperature is PD = (TJ(max) - TA)/JA. Operating at the absolute maximum TJ of 150C can affect reliability. 3. The package thermal impedance is calculated in accordance with JESD 51-7. POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 3 SLRS023D - DECEMBER 1976 - REVISED NOVEMBER 2004 electrical characteristics, TA = 25C (unless otherwise noted) PARAMETER SN75468 TEST FIGURE TEST CONDITIONS MIN TYP SN75469 MAX IC = 125 mA IC = 200 mA VI(on) On-state input voltage VCE(sat) VF ICEX Collector-emitter saturation voltage Clamp-diode forward voltage Collector cutoff current 5 VCE = 2 V 6 8 II(off) Off-state input current 3 II Input current 4 IR Clamp-diode reverse current Ci Input capacitance IC = 250 mA IC = 275 mA 2.7 IC = 300 mA IC = 350 mA 3 6 7 1.1 0.9 1.1 1 1.3 1 1.3 II = 500 A, IC = 350 mA 1.2 1.6 1.2 1.6 1.7 2 1.7 2 II = 0 II = 0 50 50 100 100 VI = 1 V V V A 500 IC = 500 A, 50 65 VI = 3.85 V VI = 5 V 0.93 50 TA = 70C f = 1 MHz A A 65 1.35 VI = 12 V VR = 100 V VR = 100 V, VI = 0, V 8 0.9 VCE = 50 V, TA = 70C UNIT 5 IC = 100 mA IC = 200 mA VCE = 100 V, TA = 70C 7 MAX II = 250 A, II = 350 A, VCE = 100 V, 2 TYP 2.4 IF = 350 mA 1 MIN 15 0.35 0.5 1 1.45 50 50 100 100 25 mA A A 15 25 pF TYP MAX 0.25 1 s 0.25 1 s switching characteristics, TA = 25C free-air temperature PARAMETER TEST CONDITIONS tPLH tPHL Propagation delay time, low-to-high-level output VS = 50 V, See Figure 9 RL = 163 , Propagation delay time, high-to-low-level output VOH High-level output voltage after switching VS = 50 V, IO 300 mA, See Figure 10 4 POST OFFICE BOX 655303 MIN CL = 15 pF, * DALLAS, TEXAS 75265 VS - 20 UNIT mV SLRS023D - DECEMBER 1976 - REVISED NOVEMBER 2004 PARAMETER MEASUREMENT INFORMATION VCE Open VCE Open ICEX ICEX Open VI Figure 1. ICEX Open Figure 2. ICEX VCE Open IC II(off) VCE IC II(on) VI Figure 3. II(off) Figure 4. II Open Open hFE= IC II VI(on) IC VCE II VCE IC NOTE: II is fixed for measuring VCE(sat), variable for measuring hFE. Figure 5. VI(on) Figure 6. hFE, VCE(sat) VR IR VF Open IF Open Figure 7. IR Figure 8. VF POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 5 SLRS023D - DECEMBER 1976 - REVISED NOVEMBER 2004 PARAMETER MEASUREMENT INFORMATION Input Open VS = 50 V RL = 163 Pulse Generator (see Note A) Output CL = 15 pF (see Note B) TEST CIRCUIT 10 ns 5 ns 90% 50% Input VIH (see Note C) 90% 50% 10% 10% 0V 0.5 s tPHL tPLH VOH Output 50% 50% VOL VOLTAGE WAVEFORMS Figure 9. Test Circuit and Voltage Waveforms VS Input Open 2 mH 1N3064 200 Pulse Generator (see Note A) Output CL = 15 pF (see Note B) TEST CIRCUIT 5 ns 10 ns 90% 1.5 V Input VIH (see Note C) 90% 1.5 V 10% 10% 40 s 0V VOH Output VOL VOLTAGE WAVEFORMS Figure 10. Latch-Up Test Circuit and Voltage Waveforms NOTES: A. The pulse generator has the following characteristics: PRR = 12.5 kHz, ZO = 50 . B. CL includes probe and jig capacitance. C. For testing the '468, VIH = 3 V; for the '469, VIH = 8 V. 6 POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 SLRS023D - DECEMBER 1976 - REVISED NOVEMBER 2004 TYPICAL CHARACTERISTICS COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT (TWO DARLINGTONS PARALLELED) VCE(sat) VCE(sat) - Collector-Emitter Saturation Voltage - V 2.5 TA = 25C 2.25 2 II = 250 mA 1.75 II = 350 mA II = 500 mA 1.5 1.25 1 0.75 0.5 0.25 0 0 100 200 300 400 500 600 700 800 2.5 TA = 25 C 2.25 II = 250 mA 2 II = 350 mA 1.75 1.5 1.25 II = 500 mA 1 0.75 0.5 0.25 0 0 100 200 300 400 500 600 700 IC - Collector Current - mA IC(tot) - Total Collector Current - mA Figure 11 Figure 12 800 COLLECTOR CURRENT vs INPUT CURRENT 500 RL = 10 TA = 25 C 450 IIC C - Collector Current - mA VCE(sat) VCE(sat) - Collector-Emitter Saturation Voltage - V COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT (ONE DARLINGTON) 400 VS = 10 V 350 VS = 8 V 300 250 200 150 100 50 0 0 25 50 75 100 125 150 175 200 II - Input Current - mA Figure 13 POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 7 SLRS023D - DECEMBER 1976 - REVISED NOVEMBER 2004 THERMAL INFORMATION N PACKAGE MAXIMUM COLLECTOR CURRENT vs DUTY CYCLE D PACKAGE MAXIMUM COLLECTOR CURRENT vs DUTY CYCLE 600 IC I C - Maximum Collector Current - mA IIC C - Maximum Collector Current - mA 600 500 N=1 N=4 N=3 400 N=2 300 N=6 N=7 N=5 200 TA = 70C N = Number of Outputs Conducting Simultaneously 100 N=1 500 400 300 N=5 N=6 N=7 200 100 TA = 70C N = Number of Outputs Conducting Simultaneously 0 0 0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 Figure 14 Figure 15 POST OFFICE BOX 655303 60 70 Duty Cycle - % Duty Cycle - % 8 N=3 N=4 N=2 * DALLAS, TEXAS 75265 80 90 100 SLRS023D - DECEMBER 1976 - REVISED NOVEMBER 2004 APPLICATION INFORMATION SN75468 VCC SN75469 VDD +V +V 1 16 1 16 2 15 2 15 3 14 3 14 4 13 4 13 5 12 5 12 6 11 6 11 7 10 7 10 8 9 8 9 CMOS Lamp Output Test TTL Output Figure 16. TTL to Load Figure 17. Buffer for Higher Current Loads SN75468 VCC +V 1 16 2 15 RP 3 14 4 13 5 12 6 11 7 10 8 9 TTL Output Figure 18. Use of Pullup Resistors to Increase Drive Current POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 9 PACKAGE OPTION ADDENDUM www.ti.com 4-Jun-2007 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Eco Plan (2) Qty SN75468D ACTIVE SOIC D 16 40 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN75468DE4 ACTIVE SOIC D 16 40 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN75468DG4 ACTIVE SOIC D 16 40 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN75468DR ACTIVE SOIC D 16 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN75468DRE4 ACTIVE SOIC D 16 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN75468DRG4 ACTIVE SOIC D 16 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN75468N ACTIVE PDIP N 16 25 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type SN75468NE4 ACTIVE PDIP N 16 25 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type SN75468NSR ACTIVE SO NS 16 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN75468NSRE4 ACTIVE SO NS 16 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN75468NSRG4 ACTIVE SO NS 16 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN75469D ACTIVE SOIC D 16 40 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN75469DE4 ACTIVE SOIC D 16 40 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN75469DG4 ACTIVE SOIC D 16 40 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN75469DR ACTIVE SOIC D 16 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN75469DRE4 ACTIVE SOIC D 16 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN75469DRG4 ACTIVE SOIC D 16 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN75469N ACTIVE PDIP N 16 25 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type SN75469NE4 ACTIVE PDIP N 16 25 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type Lead/Ball Finish MSL Peak Temp (3) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered Addendum-Page 1 PACKAGE OPTION ADDENDUM www.ti.com 4-Jun-2007 at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant SN75468NSR SO NS 16 2000 330.0 16.4 8.2 10.5 2.5 12.0 16.0 Q1 SN75469DR SOIC D 16 2500 330.0 16.4 6.5 10.3 2.1 8.0 16.0 Q1 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) SN75468NSR SO NS 16 2000 367.0 367.0 38.0 SN75469DR SOIC D 16 2500 333.2 345.9 28.6 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. 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