Zowie Technology Corporation General Purpose Transistor PNP Silicon COLLECTOR 3 3 MMBT2907A BASE 1 1 2 2 EMITTER SOT-23 MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO -60 Vdc Collector-Base Voltage VCBO -60 Vdc Emitter-Base Voltage VEBO -5.0 Vdc IC -600 mAdc Symbol Max. Unit PD 225 1.8 mW mW / oC R JA 556 PD 300 2.4 R JA TJ,TSTG 417 -55 to +150 Rating Collector Current-Continuous THERMAL CHARACTERISTICS Characteristic (1) Total Device Dissipation FR-5 Board o Derate above 25 C o TA=25 C Thermal Resistance Junction to Ambient (2) Total Device Dissipation Alumina Substrate, o Derate above 25 C o TA=25 C Thermal Resistance Junction to Ambient Junction and Storage Temperature o C/W mW mW / oC o C/W o C DEVICE MARKING MMBT2907A=2F o ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Symbol Min. Max. Unit Collector-Emitter Breakdowe Voltage(3) ( IC= -1.0mAdc, IB=0 ) V(BR)CEO -60 - Vdc Collector-Base Breakdowe Voltage ( IC= -10uAdc, IE=0 ) V(BR)CBO -60 - Vdc Emitter - Base Breakdowe Voltage ( IE= -10 uAdc, IC=0 ) V(BR)EBO -5.0 - Vdc Collector Cutoff Current ( VCE= -30 Vdc, VBE (off)= -0.5 Vdc ) ICEX - -50 nAdc Collector Cutoff Current ( VCB= -50 Vdc, IE=0 ) o ( VCB= -50 Vdc, IE=0, TA=125 C ) ICBO - -0.010 -10 uAdc IB - -50 nAdc Characteristic OFF CHARACTERISTICS Base Cutoff Current ( VCE=60 V, VEB (off)=3.0 Vdc ) (1) FR-5=1.0 x 0.75 x 0.062in. (2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina. (3) Pulse Test : Pulse Width 300 uS, Duty Cycle REV. : 0 2.0%. Zowie Technology Corporation Zowie Technology Corporation o ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Continued) Min. Max. 75 100 100 100 50 300 - VCE(sat) - -0.4 -1.6 Vdc VBE(sat) - -1.3 -2.6 Vdc fT 200 - MHZ Output Capacitance ( VCB= -10 Vdc, IE=0, f=1.0 MHZ ) Cobo - 8.0 pF Input Capacitance ( VEB= -2.0 Vdc, IC=0, f=1.0 MHZ ) Cibo - 30 pF ( VCC= -30 Vdc, IC= -150 mAdc, IB1= -15 mAdc ) ton - 45 td - 10 tr - 40 ( VCC= -6.0 Vdc, IC= -150 mAdc, IB1=IB2= -15 mAdc ) toff - 100 ts - 80 tf - 30 Symbol Characteristic Unit ON CHARACTERISTICS DC Current Gain ( IC= -0.1 mAdc, VCE= -10 Vdc ) ( IC= -1.0 mAdc, VCE= -10 Vdc ) ( IC= -10 mAdc, VCE= -10 Vdc ) (3) ( IC= -150 mAdc, VCE= -10 Vdc ) (3) ( IC= -500 mAdc, VCE= -10 Vdc ) HFE - (3) Collector-Emitter Saturation Voltage ( IC= -150 mAdc, IB= -15 mAdc ) ( IC= -500 mAdc, IB= -50 mAdc ) (3) Base-Emitter Saturation Voltage ( IC= -150 mAdc, IB= -15 mAdc ) ( IC= -500 mAdc, IB= -50 mAdc ) SMALL-SIGNAL CHARACTERISTIC (3),(4) Current-Gain-Bandwidth Product ( IC= -50 mAdc, VCE= -20 Vdc, f=100 MHZ ) SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Turn-On Time Storage Time Fall Time nS nS (3) Pulse Test : Pulse Width 300 uS, Duty Cycle 2.0%. (2) fT is defined as the frequency at which hfe extrapolates to unity. -30 V INPUT ZO = 50 PRF = 150PPS RISE TIME 2.0nS P.W. < 200nS 200 1.0 k 0 TO OSCILLOSCOPE RISE TIME 5.0nS 50 -16V 200 ns Figure 1. Delay and Rise Time Test Circuit REV. : 0 +15 V INPUT ZO = 50 PRF = 150PPS RISE TIME 2.0nS P.W. < 200nS -6.0V 1.0 k 37 1.0 k TO OSCILLOSCOPE RISE TIME 5.0nS 0 -30 V 50 1N916 200 ns Figure 2. Storage and Fall Time Test Circuit Zowie Technology Corporation Zowie Technology Corporation MMBT2907A TYPICAL CHARACTERISTICS hFE, NORMALIZED CURRETN GAIN 3.0 VCE= -10 V o 2.0 TJ = 125 C o TJ = 25 C 1.0 o TJ = -55 C 0.7 0.5 0.3 0.2 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT ( mA ) VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain -1.0 -0.8 -0.6 IC = 1.0 mA -500 mA -100 mA -10 mA -0.4 -0.2 0 -0.005 -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 IB, BASE CURRENT ( mA ) Figure 4. Collector Saturation Region 300 500 VCC= -30 V IC/IB= 10 o TJ= 25 C 200 tr 300 200 100 30 20 td @ VBE(off) = 0V 10 REV. : 0 70 50 t'S = tS - 1/8 tf 30 20 7.0 5.0 3.0 -5.0 -7.0 tf 100 50 t,TIME ( nS ) t,TIME ( nS ) 70 VCC = -30 V IC/IB = 10 IB1 = IB2 o TJ = 25 C 10 2.0 V 7.0 5.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT ( mA ) Figure 5. Turn - On Time Figure 6. Turn - Off Time -500 Zowie Technology Corporation Zowie Technology Corporation MMBT2907A 10 10 f=1.0kHz 8.0 8.0 NF, NOISE FIGURE ( dB ) NF, NOISE FIGURE ( dB ) RS =OPTIMUM SOURCE RESISTANCE IC = -1.0mA, RS=430 -500uA, RS=560 -50uA, RS=2.7k -100uA, RS=1.6k 6.0 4.0 2.0 0 0.01 0.02 6.0 IC = -50 uA -100 uA -500 uA -1.0 mA 4.0 2.0 0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k f, FREQUENCY ( kHz ) RS, SOURCE RESISTANCE ( OHMS ) Figure 7. Frequency Effects Figure 8. Source Resistance Effects 50 k 400 30 300 C, CAPACITANCE ( pF ) NF, NOISE FIGURE ( dB ) Ceb 20 10 7.0 Ccb 5.0 3.0 2.0 -0.1 200 VCE = -20 V o TJ = 25 C 100 80 60 40 30 -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 20 -1.0 -30 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1000 REVERSE VOLTAGE ( VOLTS ) IC, COLLECTOR CURRENT ( mA ) Figure 9. Capacitances Figure 10. Current-Gain Bandwidth Product +0.5 -1.0 o TJ= 25 C 0 R VC for VCE(sat) R VB for VBE o V, VOLTAGE ( VOLTS ) COEFFICIENT ( mV / C ) VBE(sat) @ IC/IB = 10 -0.8 VBE(on) @ ICE = -10V -0.6 -0.4 -0.2 -0.5 -1.0 -1.5 -2.0 VCE(sat) @ IC/IB = 10 0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT ( mA ) Figure11. " On " Voltage REV. : 0 -500 -2.5 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 IC, COLLECTOR CURRENT ( mA ) Figure 12. Temperature Coefficients Zowie Technology Corporation