Zowie Technology Corporation
General Purpose Transistor
PNP Silicon
MMBT2907A 1
2
1
2
33
SOT-23
Rating Unit
Characteristic
Collector-Emitter Voltage Vdc
Collector-Base Voltage Vdc
Emitter-Base Voltage Vdc
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
-60
-60
-5.0
-600 mAdc
Characteristic
Total Device Dissipation FR-5 Board(1) TA=25oC
Derate above 25oC
Total Device Dissipation Alumina Substrate,(2) TA=25oC
Derate above 25oC
Thermal Resistance Junction to Ambient
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DEVICE MARKING
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
OFF CHARACTERISTICS
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Emitter - Base Breakdowe Voltage
( IE= -10 uAdc, IC=0 )
Collector Cutoff Current
( VCB= -50 Vdc, IE=0 )
( VCB= -50 Vdc, IE=0, TA=125oC )
Collector-Emitter Breakdowe Voltage(3)
( IC= -1.0mAdc, IB=0 )
Unit
Vdc
Collector-Base Breakdowe Voltage
( IC= -10uAdc, IE=0 ) Vdc
Vdc
uAdc
Collector Cutoff Current
( VCE= -30 Vdc, VBE (off)= -0.5 Vdc )
Symbol
V(BR)EBO
V(BR)CEO
ICBO
IB
V(BR)CBO
ICEX
Min.
-5.0
-60
-
-
-
-60
-
Max.
-
-
-0.010
-10
-50
-
-50 nAdc
nAdcBase Cutoff Current ( VCE=60 V, VEB (off)=3.0 Vdc )
MMBT2907A=2F
Max.
225
1.8
300
2.4
556
417
-55 to +150
Unit
mW
mW / oC
mW
mW / oC
oC / W
oC / W
oC
Symbol
PD
PD
R
JA
R
JA
TJ,TSTG
Zowie Technology CorporationREV. : 0
EMITTER
BASE
COLLECTOR
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
(3) Pulse Test : Pulse Width 300 uS, Duty Cycle 2.0%.
Zowie Technology Corporation
Characteristic Symbol Min. Max. Unit
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) (Continued)
HFE
75
100
100
100
50
-
-
-
300
-
-
ON CHARACTERISTICS
VCE(sat) Vdc
DC Current Gain
 ( IC= -0.1 mAdc, VCE= -10 Vdc )
 ( IC= -1.0 mAdc, VCE= -10 Vdc )
 ( IC= -10 mAdc, VCE= -10 Vdc )
 ( IC= -150 mAdc, VCE= -10 Vdc ) (3)
 ( IC= -500 mAdc, VCE= -10 Vdc ) (3)
Collector-Emitter Saturation Voltage(3)
 ( IC= -150 mAdc, IB= -15 mAdc )
 ( IC= -500 mAdc, IB= -50 mAdc ) -
--0.4
-1.6
VBE(sat) Vdc
Base-Emitter Saturation Voltage(3)
 ( IC= -150 mAdc, IB= -15 mAdc )
 ( IC= -500 mAdc, IB= -50 mAdc ) -
--1.3
-2.6
fT
Cobo
200
-
-
8.0
MHZ
SMALL-SIGNAL CHARACTERISTIC
Cibo pF
pF
Current-Gain-Bandwidth Product(3),(4)
 ( IC= -50 mAdc, VCE= -20 Vdc, f=100 MHZ )
Output Capacitance
 ( VCB= -10 Vdc, IE=0, f=1.0 MHZ )
Input Capacitance
 ( VEB= -2.0 Vdc, IC=0, f=1.0 MHZ ) - 30
td
ton - 45
SWITCHING CHARACTERISTICS
toff
nS
Delay Time
Turn-On Time
Turn-On Time
- 10
trRise Time - 40
ts nS
Storage Time
( VCC= -30 Vdc, IC= -150 mAdc,
IB1= -15 mAdc )
( VCC= -6.0 Vdc, IC= -150 mAdc,
IB1=IB2= -15 mAdc ) -
-
100
80
tfFall Time - 30
Zowie Technology Corporation
REV. : 0
(3) Pulse Test : Pulse Width 300 uS, Duty Cycle 2.0%.
(2) fT is defined as the frequency at which hfe extrapolates to unity.
INPUT
ZO = 50
PRF = 150PPS
RISE TIME 2.0nS
P.W. < 200nS
00
-16V
200 ns
50
1.0 k
200
-30 V
TO OSCILLOSCOPE
RISE TIME 5.0nS
+15 V -6.0V
1.0 k 37
50 1N916
1.0 k
200 ns
-30 V
Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit
INPUT
ZO = 50
PRF = 150PPS
RISE TIME 2.0nS
P.W. < 200nS
TO OSCILLOSCOPE
RISE TIME 5.0nS
Zowie Technology Corporation
REV. : 0
Zowie Technology Corporation MMBT2907A
Figure 4. Collector Saturation Region
IB, BASE CURRENT ( mA )
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
IC = 1.0 mA -10 mA -100 mA -500 mA
Figure 3. DC Current Gain
IC, COLLECTOR CURRENT ( mA )
hFE, NORMALIZED CURRETN GAIN
-1.0
0
-0.005 -0.01 -0.2 -0.5 -1.0 -2.0 -20 -50
-0.8
-0.4
-0.6
-0.2
-0.02 -0.05 -0.1 -10-5.0
Figure 5. Turn - On Time
t,TIME ( nS )
IC, COLLECTOR CURRENT
Figure 6. Turn - Off Time
IC, COLLECTOR CURRENT ( mA )
t,TIME ( nS )
td @ VBE(off) = 0V
t'S = tS - 1/8 tf
trtf
2.0 V
0.3
0.5
0.7
1.0
3.0
0.2 -0.1
2.0
-0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500
TJ = 25oC
TJ = -55oC
TJ = 125oC
VCC= -30 V
IC/IB= 10
TJ= 25oC
VCC = -30 V
IC/IB = 10
IB1 = IB2
TJ = 25oC
VCE= -10 V
TYPICAL CHARACTERISTICS
300
-5.0
200
100
70
50
30
20
10
7.0
5.0
3.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 -5.0
500
300
100
70
50
30
20
10
7.0
5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500
200
Zowie Technology Corporation
REV. : 0
Zowie Technology Corporation MMBT2907A
Figure 7. Frequency Effects
f, FREQUENCY ( kHz )
Figure 9. Capacitances Figure 10. Current-Gain Bandwidth Product
RS, SOURCE RESISTANCE ( OHMS )
NF, NOISE FIGURE ( dB )
NF, NOISE FIGURE ( dB )
REVERSE VOLTAGE ( VOLTS )
C, CAPACITANCE ( pF )
IC, COLLECTOR CURRENT ( mA )
Figure11. " On " Voltage
IC, COLLECTOR CURRENT ( mA )
V, VOLTAGE ( VOLTS )
Figure 12. Temperature Coefficients
IC, COLLECTOR CURRENT ( mA )
COEFFICIENT ( mV / oC )
Figure 8. Source Resistance Effects
NF, NOISE FIGURE ( dB )
f=1.0kHz
Ceb
Ccb
TJ = 25oC
VCE = -20 V
10
0.01
8.0
6.0
4.0
2.0
00.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
RS =OPTIMUM SOURCE RESISTANCE
IC = -1.0mA, RS=430
-500uA, RS=560
-50uA, RS=2.7k
-100uA, RS=1.6k IC = -50 uA
-100 uA
-500 uA
-1.0 mA
10
8.0
6.0
4.0
2.0
0
50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k
30
-0.1
2.0
20
10
7.0
5.0
3.0
-0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30
400
300
200
100
80
60
40
30
20
-1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1000
-1.0
-0.8
-0.6
-0.4
-0.2
0
-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500
TJ= 25oC
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ ICE = -10V
+0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500
R VC for VCE(sat)
R VB for VBE
