Ordering number : ENN7156 MCH6619 P-Channel Silicon MOSFET MCH6619 Ultrahigh-Speed Switching Applications * 0.25 2.1 * Low ON-resistance. unit : mm Ultrahigh-speed switching. 2173A 4V drive. Composite type with 2 MOSFETs contained in a single package, facilitaing high-density mounting. [MCH6619] 0.25 * Package Dimensions 0.3 4 5 6 3 2 0.65 1 0.15 1.6 * 0.07 Features 2.0 6 5 4 1 2 3 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 0.85 (Bottom view) Specifications SANYO : MCPH6 (Top view) Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage VGSS 20 V --1.0 A Drain Current (DC) Drain Current (Pulse) ID IDP PW10s, duty cycle1% Allowable Power Dissipation PD Mounted on a ceramic board (900mm20.8mm)1unit --4.0 A 0.8 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Conditions ID=--1mA, VGS=0 VDS=--30V, VGS=0 Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS VGS(off) yfs VGS=16V, VDS=0 VDS=--10V, ID=--1mA VDS=--10V, ID=--500mA RDS(on)1 RDS(on)2 ID=--500mA, VGS=--10V ID=--300mA, VGS=--4V Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Ratings min typ Unit max --30 V --1.2 0.57 Marking : FT --1 A 10 A --2.6 0.82 V S 420 550 m 720 1000 m Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 41002 TS IM TA-3488 No.7156-1/4 MCH6619 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss pF Coss VDS=--10V, f=1MHz VDS=--10V, f=1MHz 75 Output Capacitance 16 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 9 pF Turn-ON Delay Time td(on) See specified Test Circuit. 6 ns Rise Time tr td(off) See specified Test Circuit. 4 ns See specified Test Circuit. 12 ns Turn-OFF Delay Time Fall Time tf Qg Total Gate Charge 4 ns VDS=--10V, VGS=--10V, ID=--1A See specified Test Circuit. 2.6 nC 0.5 nC Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd VDS=--10V, VGS=--10V, ID=--1A VDS=--10V, VGS=--10V, ID=--1A Diode Forward Voltage VSD IS=--1A, VGS=0 Electrical Connection 0.5 5 V VDD= --15V 0V --10V 4 2 ID= --500mA RL=30 VIN 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 1 --1.5 Switching Time Test Circuit VIN 6 nC --0.89 D VOUT PW=10s D.C.1% G Top view 3 MCH6619 P.G ID -- VDS V --5 --1.2 Drain Current, ID -- A --4V --1.0 VGS= --3V --1.0 --0.8 --0.6 --0.4 5 C 25 --2 C 5C --1 0 --8V VDS= --10V --1.5 Drain Current, ID -- A ID -- VGS --1.4 --0.5 S Ta= 7 V --6 V --2.0 50 --0.2 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Drain-to-Source Voltage, VDS -- V --1.8 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 Gate-to-Source Voltage, VGS -- V IT03310 RDS(on) -- VGS 1400 0 --2.0 --4.0 IT03311 RDS(on) -- Ta 1200 Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m Ta=25C 1200 1000 1000 ID= --0.3A --0.5A 800 600 400 200 0 --1 --2 --3 --4 --5 --6 --7 --8 Gate-to-Source Voltage, VGS -- V --9 --10 IT03312 V 800 I D= A, --0.3 = --4 VGS 600 V = --10 , V GS 0.5A I D= -- 400 200 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- C 120 140 160 IT03313 No.7156-2/4 MCH6619 yfs -- ID VDS= --10V VGS=0 3 2 2 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 Ta=75 C 25C --25C C 25 C 5 --2 = Ta C 75 1.0 3 2 0.1 --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Drain Current, ID -- A 3 0 --0.4 --0.6 --0.8 --1.0 --1.2 Diode Forward Voltage, VSD -- V f=1MHz Ciss 7 5 --1.4 IT03315 Ciss, Coss, Crss -- VDS 100 VDD= --15V VGS= --10V 7 --0.2 IT03314 SW Time -- ID 100 5 3 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns IF -- VSD 5 Forward Current, IF -- A Forward Transfer Admittance, yfs -- S 3 2 td(off) 10 td(on) 7 5 tf 3 tr 3 2 Coss 10 Crss 2 7 1.0 5 3 5 7 2 --0.1 3 5 7 --1.0 2 Drain Current, ID -- A 0 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V 7 5 VDS= --10V ID= --1.0A <10s 10 0 1m s s 2 Drain Current, ID -- A --8 --6 --4 --2 --1.0 7 5 0 0 0.5 1.0 1.5 2.0 2.5 Total Gate Charge, Qg -- nC 3.0 IT03318 PD -- Ta 1.0 0.8 M ou ID= --1A 10 DC ms 10 0m op s era 3 tio n 2 Operation in this area is limited by RDS(on). --0.1 7 5 3 --30 IT03317 ASO IDP= --4A 3 2 Allowable Power Dissipation, PD -- W --5 IT03316 VGS -- Qg --10 Gate-to-Source Voltage, VGS -- V 3 Ta=25C Single pulse Mounted on a ceramic board(900mm20.8mm)1unit --0.01 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT04070 nt 0.6 ed on ac er am ic bo ar 0.4 d( 90 0m m2 0 .8m 0.2 m )1 un it 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT04071 No.7156-3/4 MCH6619 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 2002. Specifications and information herein are subject to change without notice. PS No.7156-4/4