MCH6619
No.7156-1/4
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7156
MCH6619
Package Dimensions
unit : mm
2173A
[MCH6619]
41002 TS IM TA-3488
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS --30 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID--1.0 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% --4.0 A
Allowable Power Dissipation PD
Mounted on a ceramic board (900mm
2
✕0.8mm)1unit
0.8 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0 --30 V
Zero-Gate Voltage Drain Current IDSS VDS=--30V, VGS=0 --1 µA
Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0 ±10 µA
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.6 V
Forward T ransfer Admittance yfsVDS=--10V, ID=--500mA 0.57 0.82 S
RDS(on)1 ID=--500mA, VGS=--10V 420 550 mΩ
Static Drain-to-Source On-State Resistance
RDS(on)2 ID=--300mA, VGS=--4V 720 1000 mΩ
Marking : FT Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6
0.250.25
0.07
2.1
1.6
2.0
0.65
0.3
0.85
0.15
1
123
654
32
546
(Bottom view)
(Top view)
Features
•Low ON-resistance.
•Ultrahigh-speed switching.
•4V dri ve.
•Composite type with 2 MOSFETs contained in a single
package, facilitaing high-density mounting.
MCH6619
No.7156-2/4
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Input Capacitance Ciss VDS=--10V, f=1MHz 75 pF
Output Capacitance Coss VDS=--10V, f=1MHz 16 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 9 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 6 ns
Rise T ime trSee specified Test Circuit. 4 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 12 ns
Fall Time tfSee specified Test Circuit. 4 ns
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--1A 2.6 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--1A 0.5 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--1A 0.5 nC
Diode Forward Voltage VSD IS=--1A, VGS=0 --0.89 --1.5 V
Electrical Connection Switching Time Test Circuit
PW=10µs
D.C.≤1%
P.G 50Ω
G
S
D
ID= --500mA
RL=30Ω
VDD= --15V
VOUT
MCH6619
VIN
0V
--10V
VIN
--60 --40 --20 0 20 40 60 80 100 120 140 160
IT03312
200
400
600
800
1000
1200
1400
0
--4V
--5V
IT03310 IT03311
IT03313
200
400
600
800
1000
1200
0
ID= --0.5A, VGS= --10V
ID= --0.3A, VGS= --4V
VGS= --3V
--6V
--8V
--10V
ID= --0.3A --0.5A
Ta=25°C
VDS= --10V
25°C
--25°C
Ta=75°C
RDS(on) -- VGS
ID -- VDS ID -- VGS
RDS(on) -- Ta
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
Ambient Temperature, Ta -- °C
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
--1 --2 --3 --4 --6 --7 --8--5 --9 --10
0
0
--0.5
--1.0
--2.0
--0.2
--1.5
0
--0.4 --0.6 --0.8 --2.0--1.0 --1.2 --1.4 --1.6 --1.8 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0
654
123
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
Top view
MCH6619
No.7156-3/4
0 0.5 1.0 1.5 2.0 3.02.5
IT03318
3
2
100
5
7
10
7
5
3
2
1.0
VDD= --15V
VGS= --10V
td(on)
td(off)
tf
tr
IT03316
IT03314
3
1.0
2
0.1
7
5
3
2
VDS= --10V
IT03315
VGS=0
--25°C
25°C
Ta=75°C
5
10
100
2
7
5
3
7
IT03317
Ciss
Coss
Crss
f=1MHz
VDS= --10V
ID= --1.0A
0
--2
--4
--6
--8
--10
35 --0.1 --1.0
2735723
--0.01 --0.1
23 57 2 2357
--1.0 30 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4
--0.01
--0.1
5
--1.0
7
5
3
2
7
5
3
2
3
2
0 --5 --10 --15 --20 --25 --30
SW Time -- IDCiss, Coss, Crss -- VDS
yfs -- IDIF -- VSD
Drain Current, ID -- A
Switching Time, SW Time -- ns
Drain Current, ID -- A
Forward Transfer Admittance,
y
fs -- S
Diode Forward Voltage, VSD -- V
Forward Current, IF -- A
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
VGS -- Qg
PD -- Ta
A S O
Total Gate Charge, Qg -- nC
Gate-to-Source Voltage, VGS -- V
Ambient Temperature, Ta -- °C
Allowable Power Dissipation, PD -- W
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
75
°C
25°C
Ta= --25°C
0
020 40
0.2
0.4
0.6
0.8
1.0
60 80 100 120 140 160
IT04071
Mounted on a ceramic board(900mm
2
✕0.8mm) 1unit
2
3
5
7
2
3
5
7
2
3
5
7
--1.0
--0.1
--0.01 --1.0--0.1 --10 23 523 5723 57
IT04070
IDP= --4A
ID= --1A
100µs
100ms
DC operation
1ms
10ms
<10µs
Operation in this
area is limited by RDS(on).
Ta=25°C
Single pulse
Mounted on a ceramic board(900mm
2
✕0.8mm)1unit
MCH6619
No.7156-4/4
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of April, 2002. Specifications and information herein are subject
to change without notice.
PS
