CR12600SE-T1 - ON SEMICONDUCTOR

Document Number: 93529 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 25-May-09 1

Standard Recovery Diodes,

(Stud Version), 85 A

85HF(R) Series

Vishay Semiconductors

FEATURES

• High surge current capability

• Stud cathode and stud anode version

• Leaded version available

• Types up to 1600 V VRRM

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

TYPICAL APPLICATIONS

• Battery chargers

• Converters

• Power supplies

• Machine tool controls

• Welding

ELECTRICAL SPECIFICATIONS

PRODUCT SUMMARY

IF(AV) 85 A

DO-203AB (DO-5)

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS 85HF(R) UNITS

10 TO 120 140/160

IF(AV)

85 A

TC140 110 °C

IF(RMS) 133 A

IFSM

50 Hz 1700 A

60 Hz 1800

I2t50 Hz 14 500 A2s

60 Hz 13 500

VRRM Range 100 to 1200 1400/1600 V

TJ- 65 to 180 - 65 to 150 °C

VOLTAGE RATINGS

TYPE NUMBER VOLTAGE

CODE

VRRM, MAXIMUM REPETITIVE

PEAK REVERSE VOLTAGE

VRSM, MAXIMUM NON-REPETITIVE

PEAK REVERSE VOLTAGE

IRRM MAXIMUM

AT TJ = TJ MAXIMUM

85HF(R)

10 100 200

20 200 300

40 400 500

60 600 700

80 800 900

100 1000 1100

120 1200 1300

140 1400 1500 4.5

160 1600 1700

www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 93529

2Revision: 25-May-09

85HF(R) Series

Vishay Semiconductors Standard Recovery Diodes,

(Stud Version), 85 A

Notes

(1) Available only for 88HF

(2) Recommended for pass-through holes

(3) Recommended for holed threaded heatsinks

FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS 85HF(R) UNITS

10 to 120 140/160

Maximum average forward current

at case temperature IF(AV) 180° conduction, half sine wave 85 A

140 110 °C

Maximum RMS forward current IF(RMS) 133 A

Maximum peak, one-cycle forward,

non-repetitive surge current IFSM

t = 10 ms No voltage

reapplied

Sinusoidal half wave,

initial TJ = TJ maximum

1700

t = 8.3 ms 1800

t = 10 ms 100 % VRRM

reapplied

1450

t = 8.3 ms 1500

Maximum I2t for fusing I2t

t = 10 ms No voltage

reapplied

14 500

A2s

t = 8.3 ms 13 500

t = 10 ms 100 % VRRM

reapplied

10 500

t = 8.3 ms 9400

Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 16 000 A2s

Value of threshold voltage

(up to 1200 V) VF(TO) TJ = TJ maximum

0.68

Value of threshold voltage

(for 1400 V, 1600 V) 0.69

Value of forward slope resistance

(up to 1200 V) rfTJ = TJ maximum

1.62

m

Value of forward slope resistance

(for 1400 V, 1600 V) 1.75

Maximum forward voltage drop VFM Ipk = 267 A, TJ = 25 °C, tp = 400 µs rectangular wave 1.2 1.4 V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS 85HF(R) UNITS

10 to 120 140/160

Maximum junction operating and

storage temperature range TJ, TStg - 65 to 180 - 65 to 150 °C

Maximum thermal resistance,

junction to case RthJC DC operation 0.35

K/W

Maximum thermal resistance,

case to heatsink RthCS Mounting surface, smooth, flat and greased 0.25

Maximum shock (1) 1500

Maximum constant vibration (1) 50 Hz 20

Maximum constant acceleration (1) Stud outwards 5000

Maximum allowable mounting

torque (+ 0 %, - 10 %)

Not lubricated thread, tighting on nut (2) 3.4 (30)

N · m

(lbf · in)

Lubricated thread, tighting on nut (2) 2.3 (20)

Not lubricated thread, tighting on hexagon (3) 4.2 (37)

Lubricated thread, tighting on hexagon (3) 3.2 (28)

Approximate weight Unleaded device 17 g

0.6 oz.

Case style See dimensions - link at the end of datasheet DO-203AB (DO-5)

Document Number: 93529 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 25-May-09 3

85HF(R) Series

Standard Recovery Diodes,

(Stud Version), 85 A Vishay Semiconductors

Note

• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC

Fig. 1 - Current Ratings Characteristics

Fig. 2 - Current Ratings Characteristics

Fig. 3 - Current Ratings Characteristics

Fig. 4 - Current Ratings Characteristics

RthJC CONDUCTION

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

180° 0.10 0.08

TJ = TJ maximum K/W

120° 0.11 0.11

90° 0.13 0.13

60° 0.17 0.17

30° 0.26 0.26

)A( tnerruC drawroF egarevA

Maximum Allowable Case Temperature (°C)

130

140

150

160

170

180

0 1020304050607080 90 100

30° 60° 90°

120°

180°a

Conduction Angle

85HF(R) Series (100V to 1200V)

RthJC (DC) = 0.35 K/W

)A( tnerruC drawroF egarevA

Maximum Allowable Case Temperature (°C)

130

140

150

160

170

180

020406080 100 120 140

30°

60° 90°

120° 180°

Conduction Period

85HF(R) Series (100V to 1200V)

RthJC (DC) = 0.35 K/W

Average Forward Current (A)

Maximum Allowable Case Temperature (°C)

100

110

120

130

140

150

0 1020304050607080 90 100

30° 60° 90° 120°

180°

Conduction Angle

85HF(R) Series (1400V to 1600V)

RthJC (DC) = 0.35 K/W

Average Forward Current (A)

Maximum Allowable Case Temperature (°C)

100

110

120

130

140

150

020406080 100 120 140

120

180

Conduction Period

85HF(R) Series (1400V to 1600V)

RthJC (DC) = 0.35 K/W

www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 93529

4Revision: 25-May-09

85HF(R) Series

Vishay Semiconductors Standard Recovery Diodes,

(Stud Version), 85 A

Fig. 5 - Forward Power Loss Characteristics

Fig. 6 - Forward Power Loss Characteristics

Fig. 7 - Forward Power Loss Characteristics

Average Forward Current (A)

Maximum Average Forward Power Loss (W)

Maximum Allowable Ambient Temperature (°C)

RMS Limit

Conduction Angle

180

120

85HF(R) Series

(100V to 1200V)

Tj = 180˚C

020406080 100 120 140 160 180

1 K/W

1.5 K/W

2 K/W

3 K/W

5 K/W

10 K/W

0.7 K/W

RthSA = 0.5 K/W - Delta R

0102030405060708090

Average Forward Current (A)

Maximum Average Forward Power Loss (W)

Maximum Allowable Ambient Temperature (°C)

020406080 100 120 140 160 180

10 K/W

5 K/W

3 K/W

2 K/W

1 K/W

0.7 K/W

1.5 K/W

RthSA = 0.5 K/W - Delta R

100

120

0 20406080 100 120 140

180

120

RMS Limit

Conduction Period

85HF(R) Series

(100V to 1200V)

Tj = 180˚C

Average Forward Current (A)

Maximum Average Forward Power Loss (W)

Maximum Allowable Ambient Temperature (°C)

0 25 50 75 100 125 150

1.5 K/W

2 K/W

3 K/W

5 K/W

10 K/W

1 K/W

0.7 K/W

RthSA = 0.5 K/W - Delta R

100

0 102030405060708090

RMS Limit

Conduction Angle

180

120

85HF(R) Series

(1400V, 1600V)

Tj = 150˚C

Document Number: 93529 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 25-May-09 5

85HF(R) Series

Standard Recovery Diodes,

(Stud Version), 85 A Vishay Semiconductors

Fig. 8 - Forward Power Loss Characteristics

Fig. 9 - Maximum Non-Repetitive Surge Current

Fig. 10 - Maximum Non-Repetitive Surge Current

Fig. 11 - Forward Voltage Drop Characteristics

(up to 1200 V)

Fig. 12 - Forward Voltage Drop Characteristics

(for 1400 V, 1600 V)

Average Forward Current (A)

Maximum Average Forward Power Loss (W)

Maximum Allowable Ambient Temperature (°C)

0 25 50 75 100 125 150

1.5 K/W

2 K/W

3 K/W

5 K/W

10 K/W

0.7 K/W

1 K/W

RthSA = 0.5 K/W - Delta R

100

120

140

0 20406080 100 120 140

180

120

RMS Limit

Conduction Period

85HF(R) Series

(1400V, 1600V)

Tj = 150˚C

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Peak Half Sine Wave Forward Current (A)

400

600

800

000

200

400

600

11010

85HF(R) Series

Initial Tj = Tj Max.

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s

At Any Rated Load Condition And With

Rated Vrrm Applied Following Surge.

Pulse Train Duration (s)

Peak Half Sine Wave Forward Current (A)

200

400

600

800

1000

1200

1400

1600

1800

0.01 0.1 1

Maximum Non Repetitive Surge Current

85HF(R) Series

Initial Tj = Tj Max.

No Voltage Reapplied

Rated Vrrm Reapplied

Versus Pulse Train Duration.

Instantaneous Forward Voltage (V)

Instantaneous Forward Current (A)

100

1000

0000

012345

Tj = 25

°C

Tj = Tj Max.

85HF(R) Series

up to 1200V

100

1000

00.511.522.5

Tj = 25

°C

Tj = Tj Max.

88HF (R) Series

Instantaneous Forward Voltage (V)

Instantaneous Forward Current (A)

www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 93529

6Revision: 25-May-09

85HF(R) Series

Vishay Semiconductors Standard Recovery Diodes,

(Stud Version), 85 A

Fig. 13 - Thermal Impedance ZthJC Characteristics

ORDERING INFORMATION TABLE

Square Wave Pulse Duration (s)

Transient Thermal Impedance Z thJC (K/W)

0.001

0.01

0.1

0.0001 0.001 0.01 0.1 1 10

85HF(R) Series

Steady State Value

RthJC = 0.35 K/W

(DC Operation)

1- 85 = Standard device

86 = Not isolated lead

87 = Isolated lead with silicone sleeve

(red = Reverse polarity)

(blue = Normal polarity)

88 = Type for rotating application

2- HF = Standard diode

3- None = Stud normal polarity (cathode to stud)

R = Stud reverse polarity (anode to stud)

4- Voltage code x 10 = VRRM (see Voltage Ratings table)

5- None = Stud base DO-203AB (DO-5) 1/4" 28UNF-2A

M = Stud base DO-203AB (DO-5) M6 x 1 (not available for 88HF)

Device code

51324

85 HF R 160 M

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95342

Document Number: 95342 For technical questions, contact: indmodules@vishay.com www.vishay.com

Revision: 29-Sep-08 1

DO-203AB (DO-5) for 85HF(R) and 86HF(R) Series

Outline Dimensions

Vishay Semiconductors

DIMENSIONS FOR 85HF(R) SERIES in millimeters (inches)

1/4" 28UNF-2A

for metric devices: M6 x 1

Ø 15.1 (0.59)

6.1/7

(0.24/0.27)

10.8 (0.42)

11.4 (0.45)

4 (0.16) MIN.

4 (0.16)

25.4 (1) MAX.

11.1 ± 0.4

(0.44 ± 0.02)

1.20 (0.04) 17.35 (0.68)

www.vishay.com For technical questions, contact: indmodules@vishay.com Document Number: 95342

2Revision: 29-Sep-08

Outline Dimensions

Vishay Semiconductors DO-203AB (DO-5) for 85HF(R)

and 86HF(R) Series

DIMENSIONS FOR 86HF(R) SERIES in millimeters (inches)

12.2 (0.48) MAX.

Ø 7 (0.28) MAX.

134.4 (5.29)

MAX.

123 (4.84)

MAX.

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Revision: 02-Oct-12 1Document Number: 91000

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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council

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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that

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