1C3D04060E Rev. E
C3D04060E
Silicon Carbide Schottky Diode
Z-Rec™ RectifieR
Features
• 600-VoltSchottkyRectier
• OptimizedforPFCBoostDiodeApplication
• ZeroReverseRecoveryCurrent
• ZeroForwardRecoveryVoltage
• High-FrequencyOperation
• Temperature-IndependentSwitchingBehavior
• ExtremelyFastSwitching
• PositiveTemperatureCoefcientonVF
Benets
• ReplaceBipolarwithUnipolarRectiers
• EssentiallyNoSwitchingLosses
• HigherEfciency
• ReductionofHeatSinkRequirements
• ParallelDevicesWithoutThermalRunaway
Applications
• SwitchModePowerSupplies
• PowerFactorCorrection
-TypicalPFCPout:400W-600W
Package
TO-252-2
Maximum Ratings (TC=25˚Cunlessotherwisespecied)
Symbol Parameter Value Unit Test Conditions Note
VRRM RepetitivePeakReverseVoltage 600 V
VRSM SurgePeakReverseVoltage 600 V
VDC DCBlockingVoltage 600 V
IFForwardContinuousCurrent
15.5
7.5
4
A
TC=25˚C
TC=135˚C
TC=155˚C
IFRM RepetitivePeakForwardSurgeCurrent 22
17 ATC=25˚C,tP=10mS,HalfSineWaveD=0.3
TC=110˚C,tP=10mS,HalfSineWaveD=0.3
IFSM Non-RepetitivePeakForwardSurgeCurrent 31.9
28.5 ATC=25˚C,tP=10mS,HalfSineWaveD=0.3
TC=110˚C,tP=10mS,HalfSineWaveD=0.3
IFSM Non-RepetitivePeakForwardSurgeCurrent 110 ATC=25˚C,tP=10µS,Pulse
Ptot PowerDissipation 75
32.5 WTC=25˚C
TC=110˚C
TJ,Tstg OperatingJunctionandStorageTemperature -55 to
+175 ˚C
TO-220MountingTorque 1
8.8
Nm
lbf-in
M3Screw
6-32Screw
Part Number Package Marking
C3D04060E TO-252-2 C3D04060
PIN1
PIN2 CASE
VRRM = 600 V
IF (TC=135˚C) =7.5A
Qc  = 8.5nC
2C3D04060E Rev. E
Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
VFForwardVoltage 1.5
1.8
1.8
2.4 VIF=4ATJ=25°C
IF=4ATJ=175°C
IRReverseCurrent 10
20
50
100 μAVR = 600 V TJ=25°C
VR = 600 V TJ=175°C
QCTotalCapacitiveCharge 8.5 nC
VR=600V,IF=4A
di/dt=500A/μs
TJ=25°C
C TotalCapacitance
251
22
21
pF
VR=0V,TJ=25°C,f=1MHz
VR=200V,TJ=25˚C,f=1MHz
VR=400V,TJ=25˚C,f=1MHz
Note:
1. Thisisamajoritycarrierdiode,sothereisnoreverserecoverycharge.
Thermal Characteristics
Symbol Parameter Typ. Unit
RθJC TO-252PackageThermalResistancefromJunctiontoCase 2.02 °C/W
Typical Performance
6
7
8
9
10
Reverse Current (uA)
TO-220 4A
Series1
0
1
2
3
4
5
0 100 200 300 400 500 600 700 800
IR
Reverse Current (uA)
VRReverse Voltage (V)
Series2
Series3
Series4
Figure1.ForwardCharacteristics Figure2.ReverseCharacteristics
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
I
F
Forward Current (A)
VFForward (V)
Current(A)
Series2
Series3
Series4
TJ =25°C
TJ =75°C
TJ =125°C
TJ =175°C
IF Forward Current (A)
VF Forward Voltage (V)
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
10
9
8
7
6
5
4
3
2
1
0
0 100 200 300 400 500 600 700 800
TJ =25°C
TJ =75°C
TJ =125°C
TJ =175°C
IR Reverse Current (μA)
VR Reverse Voltage (V)
3C3D04060E Rev. E
Figure3.CurrentDerating
Figure5.TransientThermalImpedance
Figure4.Capacitancevs.ReverseVoltage
Typical Performance
I
F(PEAK)
Peak Forward Current (A)
T
C
Case Temperature (
°
C
)
*Frequency>1KHz
25 50 75 100 125 150 175
40
35
30
25
20
15
10
5
0
20%Duty*
30%Duty*
50%Duty*
70%Duty*
DC
0
20
40
60
80
100
120
140
1 10 100 1000
C Capacitance (pF)
V
R
Reverse Voltage (V)
"D2_4A_TO-220"
"D2_4A_TO-220"
140
120
100
80
60
40
20
0
1 10 100 1000
C Capacitance (pF)
VR Reverse Voltage (V)
Time (s)
Zth (°C/W)
4C3D04060E Rev. E
Typical Performance
80
70
60
50
40
30
20
10
0
Power Dissipation (W)
T
C
Case Temperature (
°
C
)
25 50 75 100 125 150 175
Figure6.PowerDerating

40.0
50.0
60.0
70.0
80.0
Power Dissipation (W)
0.0
10.0
20.0
30.0
25 50 75 100 125 150 175
Power Dissipation (W)
TcCase Temperature (°C)
POS Inches Millimeters
Min Max Min Max
A.250 .289 6.350 7.341
B.197 .215 5.004 5.461
C.027 .050 .686 1.270
D* .270 .322 6.858 8.179
E .178 .182 4.521 4.623
F.025 .045 .635 1.143
G44˚ 46˚ 44˚ 46˚
H .380 .410 9.652 10.414
J.090TYP 2.286TYP
K 6˚ 8˚ 6˚ 8˚
L.086 .094 2.184 2.388
M.018 .034 .457 .864
N.035 .050 .889 1.270
P.231 .246 5.867 6.248
Q 0.00 .005 0.00 .127
RR0.010TYP R0.254TYP
S .017 .023 .432 .584
T .038 .045 .965 1.143
U.021 .029 .533 .737
Package Dimensions
PackageTO-252-2
Note:
*Tab“D”maynotbepresent
*
5C3D04060E Rev. E
Recommended Solder Pad Layout
Part Number Package Marking
C3D04060E TO-252-2 C3D04060
TO-252-2
Diode Model
RT
Diode Model CSD10060
Vf T = VT + If*RT
VT= 0.92 + (Tj * -1.35*10-3)
RT= 0.052 + (Tj * 0.29*10-3)
Note: Tj = Diode Junction Temperature In Degrees Celsius
VfT = VT+If*RT
VT = 0.98+(TJ* -1.8*10-3)
RT = 0.10+(TJ* 9.16*10-4)
0.08
Note: Recommended soldering proles can be found in the applications note here:
http://www.cree.com/power_app_notes/soldering
66 C3D04060E Rev. E
Copyright © 2013 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
• RoHSCompliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
• REAChCompliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-
cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiacdebrillatorsorsimilaremergencymedicalequipment,aircraftnavigationorcommunicationorcontrol
systems,airtrafccontrolsystems,orweaponssystems.
Notes
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Cree, Inc.:
C3D04060E C3D04060E-TR