DE275X2-102N06A
RF Power MOSFET
V
DSS
= 1000 V
I
D25
= 16 A
R
DS(on)
= 0.8 Ω
ΩΩ
Ω
P
DC
= 1180 W
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C
1000 V
V
DGR
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
1000 V
V
GS
Continuous
±20 V
V
GSM
Transient
±30 V
I
D25
T
c
= 25°C
16 A
I
DM
T
c
= 25°C, pulse width limited by T
JM
48 A
I
AR
T
c
= 25°C
6 A
E
AR
T
c
= 25°C
20 mJ
dv/dt
I
S
≤ I
DM
, di/dt ≤ 100A/µs, V
DD
≤ V
DSS
,
T
j
≤ 150°C, R
G
= 0.2Ω
5 V/ns
I
S
= 0
>200 V/ns
P
DC
(1)
1180 W
P
DHS
(1)
T
c
= 25°C, Derate 5.0W/°C above 25°C
750 W
P
DAMB
(1)
T
c
= 25°C
5.0 W
Symbol Test Conditions Characteristic Values
T
J
= 25°C unless otherwise specified
min. typ. max.
V
DSS
V
GS
= 0 V, I
D
= 3 ma
1000 V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 ma
2.5 5.5 V
I
GSS
V
GS
= ±20 V
DC
, V
DS
= 0
±100 nA
I
DSS
V
DS
= 0.8 V
DSS
T
J
= 25°C
V
GS
= 0 T
J
= 125°C
50
1 µA
mA
R
DS(on)
1.6 Ω
g
fs
V
DS
= 15 V, I
D
= 0.5I
D25
, pulse test
2 7.5 S
V
GS
= 15 V, I
D
= 0.5I
D25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
R
thJC
(1)
0.25 C/W
R
thJHS
(1)
0.50 C/W
T
J
-55 +175 °C
T
JM
175 °C
T
stg
-55 +175 °C
T
L
1.6mm (0.063 in) from case for 10 s
300 °C
Weight
4 g
Features
•
Isolated Substrate
−
high isolation voltage (>2500V)
−
excellent thermal transfer
−
Increased temperature and power
cycling capability
•
IXYS advanced low Q
g
process
•
Low gate charge and capacitances
−
easier to drive
−
faster switching
•
Low R
DS(on)
•
Very low insertion inductance (<2nH)
•
No beryllium oxide (BeO) or other
hazardous materials
Advantages
•
High Performance Push-Pull RF
Package
•
Optimized for RF and high speed
switching at frequencies to >100MHz
•
Easy to mount—no insulators needed
•
High power density
♦ Common Source Push-Pull Pair
♦ N-Channel Enhancement Mode
♦ Low Q
g
and R
g
♦ High dv/dt
♦ Nanosecond Switching
DRAIN 1
SG1 SD1
GATE 1
DRAIN 2
SG2SD2
GATE 2
The DE275X2-102N06A is a matched pair of RF power MOSFET devices in a
common source configuration. The device is optimized for push-pull or paral-
lel operation in RF generators and amplifiers at frequencies to >65 MHz.
Note: All specifications are per each
transistor, unless otherwise noted.
(1)
Thermal specifications are for the
package, not per transistor
Unless noted, specifications are for each output device
Source 1 Source 2
DE275X2-102N06A
RF Power MOSFET
Symbol Test Conditions Characteristic Values
(T
J
= 25°C unless otherwise specified)
min. typ. max.
R
G
0.3 Ω
C
iss
1800 pF
C
oss
V
GS
= 0 V, V
DS
= 0.8 V
DSS(max)
,
f = 1 MHz
130 pF
C
rss
25 pF
T
d(on)
3 ns
T
on
V
GS
= 15 V, V
DS
= 0.8 V
DSS
I
D
= 0.5 I
DM
R
G
= 0.2 Ω (External)
2 ns
T
d(off)
4 ns
T
off
5 ns
Q
g(on)
50 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
I
D
= 0.5 I
D25
20 nC
Q
gd
30 nC
C
stray
Back Metal to any Pin
21 pF
Source-Drain Diode Characteristic Values
(T
J
= 25°C unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
V
GS
= 0 V
6 A
I
SM
Repetitive; pulse width limited by T
JM
96 A
V
SD
1.5 V
T
rr
200 ns
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2%
Q
RM
I
F
= I
S
, -di/dt = 100A/µs,
V
R
= 100V
0.6 µC
I
RM
4 A
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508
5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715
5,381,025 5,640,045
(1) These parameters apply to the package, not individual MOSFET devices.
For detailed device mounting and installation instructions, see the “DE-
Series MOSFET Mounting Instructions” technical note on IXYS RF’s web
site at www.ixysrf.com/Technical_Support/App_notes.html
DE275X2-102N06A
RF Power MOSFET
10
100
1000
10000
0 100 200 300 400 500 600 700 800 900 1000
Vds in Volts
Capacitance in pF
Ciss
Coss
Crss
275X2-102N06A Capacitances vs Vds
S = S1 = Source1 S = S1 = Source1
S = S2 = Source2 S = S2 = Source2
G1 = Gate1
G2 = Gate2
D1 = Drain1
D2 = Drain2
Note: Sources S1, S2 are independent, having no com-
mon connection between them for the package diagram.
DE275X2-102N06A
RF Power MOSFET
102N06A DE-SERIES SPICE Model
The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expansion of the SPICE level 3
MOSFET model. It includes the stray inductive terms L
G
, L
S
and L
D
. Rd is the R
DS(ON)
of the device, Rds
is the resistive leakage term. The output capacitance, C
OSS
, and reverse transfer capacitance, C
RSS
are
modeled with reversed biased diodes. This provides a varactor type response necessary for a high
power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff.
Figure 1 DE-SERIES SPICE Model
This SPICE model may be downloaded as a text file from the IXYS RF web site at
www.ixysrf.com
Net List:
*SYM=POWMOSN
.SUBCKT 102N06A 10 20 30
* TERMINALS: D G S
* 1000 Volt 6 Amp 1.6 Ohm N-Channel Power MOSFET
M1 1 2 3 3 DMOS L=1U W=1U
RON 5 6 .5
DON 6 2 D1
ROF 5 7 1.0
DOF 2 7 D1
D1CRS 2 8 D2
D2CRS 1 8 D2
CGS 2 3 1.9N
RD 4 1 1.6
DCOS 3 1 D3
RDS 1 3 5.0MEG
LS 3 30 .5N
LD 10 4 1N
LG 20 5 1N
.MODEL DMOS NMOS (LEVEL=3 VTO=4 KP=2.3)
.MODEL D1 D (IS=.5F CJO=10P BV=100 M=.5 VJ=.2 TT=1N)
.MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.6 VJ=.6 TT=1N RS=10M)
.MODEL D3 D (IS=.5F CJO=400P BV=1000 M=.35 VJ=.6 TT=400N RS=10M)
.ENDS
5 6
7
8
4
10 DRAIN
30 SOURCE
20 GATE
Don
Dcos
D2crs
D1crs
Rds
Ron
Doff
Roff
Rd
Lg
Ld
Ls
M3
2
13
An IXYS Company
2401 Research Blvd., Suite 108
Fort Collins, CO USA 80526
970-493-1901 Fax: 970-493-1903
Email: deiinfo@directedenergy.com
Web: http://www.directedenergy.com
Doc #9200-0224 Rev 6
© 2006 IXYS RF
