RF & Protection Devices
Data Sheet
Revision 1.2, 2013-04-09
BFR840L3RHESD
Robust Low Noise Silicon Germanium Bipolar RF Transistor
Edition 2013-04-09
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BFR840L3RHESD
Data Sheet 3 Revision 1.2, 2013-04-09
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™,
CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™,
ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™,
POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™,
ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™,
thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2011-11-11
BFR840L3RHESD, Robust Low Noise Silicon Germanium Bipolar RF Transistor
Revision History: 2013-04-09, Revision 1.2
Page Subjects (major changes since last revision)
This data sheet replaces the revision from 2012-07-11.
P. 8 Item about AEC-Q101 added to feature list, minor changes.
P. 27 Picture for marking description updated.
BFR840L3RHESD
Table of Contents
Data Sheet 4 Revision 1.2, 2013-04-09
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5.1 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5.2 General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5.3 Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5.4 Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5.5 Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
6 Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
7 Package Information TSLP-3-9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Table of Contents
BFR840L3RHESD
List of Figures
Data Sheet 5 Revision 1.2, 2013-04-09
Figure 4-1 Total Power Dissipation Ptot =f(TS). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 5-1 BFR840L3RHESD Testing Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 5-2 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter . . . . . . . . . . . . . . . . . 16
Figure 5-3 DC Current Gain hFE = f (IC), VCE = 1.8 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 5-4 Collector Current vs. Base Emitter Forward Voltage IC = f (VBE), VCE = 1.8 V . . . . . . . . . . . . . . . . 17
Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 1.8 V . . . . . . . . . . . . . . . . . . . 17
Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 1.8 V . . . . . . . . . . . . . . . . . . . 18
Figure 5-7 Transition Frequency fT = f (IC), f = 2 GHz, VCE = Parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 5-8 3rd Order Intercept Point at output OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameter . . . . . . . . . . 19
Figure 5-9 3rd Order Intercept Point at output OIP3 [dBm] = f (IC, VCE), ZS = ZL= 50 Ω, f = 5.5 GHz . . . . . . . 20
Figure 5-10 Compression Point at output OP1dB [dBm] = f (IC, VCE), ZS = ZL= 50 Ω, f = 5.5 GHz . . . . . . . . . . . 20
Figure 5-11 Collector Base Capacitance CCB = f (VCB), f= 1 MHz. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 5-12 Gain Gma, Gms, IS21I² = f (f), VCE = 1.8 V, IC = 10 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 5-13 Maximum Power Gain Gmax = f (IC), VCE = 1.8 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 22
Figure 5-14 Maximum Power Gain Gmax = f (VCE), IC = 10 mA, f= Parameter in GHz . . . . . . . . . . . . . . . . . . . . 22
Figure 5-15 Input Reflection Coefficient S11 = f (f), VCE = 1.8 V, IC = 5 / 10 / 15 mA . . . . . . . . . . . . . . . . . . . . . 23
Figure 5-16 Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 1.8 V, IC = 5 / 10 / 15 mA . . . . . . 23
Figure 5-17 Output Reflection Coefficient S22 = f (f), VCE = 1.8 V, IC = 5 / 10 / 15 mA. . . . . . . . . . . . . . . . . . . . 24
Figure 5-18 Noise Figure NFmin = f (f), VCE = 1.8 V, IC = 5 / 10 / 15 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . 24
Figure 5-19 Noise Figure NFmin = f (IC), VCE = 1.8 V, ZS = Zopt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 25
Figure 5-20 Noise Figure NF50 = f (IC), VCE = 1.8 V, ZS = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 25
Figure 7-1 Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 7-2 Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 7-3 Marking Description (Marking BFR840L3RHESD: T8). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 7-4 Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
List of Figures
BFR840L3RHESD
List of Tables
Data Sheet 6 Revision 1.2, 2013-04-09
Table 3-1 Maximum Ratings at TA = 25 °C (unless otherwise specified). . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Table 4-1 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Table 5-1 DC Characteristics at TA= 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Table 5-2 General AC Characteristics at TA= 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Table 5-3 AC Characteristics, VCE = 1.8 V, f= 0.45 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Table 5-4 AC Characteristics, VCE = 1.8 V, f= 0.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 5-5 AC Characteristics, VCE = 1.8 V, f= 1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 5-6 AC Characteristics, VCE = 1.8 V, f= 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 5-7 AC Characteristics, VCE = 1.8 V, f= 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 5-8 AC Characteristics, VCE = 1.8 V, f= 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 5-9 AC Characteristics, VCE = 1.8 V, f= 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 5-10 AC Characteristics, VCE = 1.8 V, f= 10 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Table 5-11 AC Characteristics, VCE = 1.8 V, f= 12 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
List of Tables
BFR840L3RHESD
Product Brief
Data Sheet 7 Revision 1.2, 2013-04-09
1 Product Brief
The BFR840L3RHESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for
5-6 GHz Wi-Fi applications. The device is based on Infineon´s reliable high volume SiGe:C technology.
The BFR840L3RHESD provides inherently good input and output power match as well as inherently good noise
match at 5-6 GHz. The simultaneous noise and power match without lossy external matching components at the
input leads to a low external parts count, to a very good noise figure and to a very high transducer gain in the
Wi-Fi application. Integrated protection elements at in- and output make the device robust against ESD and
excessive RF input power.
The device offers its high performance at low current and voltage and is especially well-suited for portable battery-
powered applications in which energy efficiency is a key requirement. The device comes in a very small thin
leadless package, ideal for modules.
BFR840L3RHESD
Features
Data Sheet 8 Revision 1.2, 2013-04-09
2 Features
Applications
As Low Noise Amplifier (LNA) in
• Mobile and fixed connectivity applications: WLAN 802.11, WiMAX and UWB
• Satellite communication systems: satellite radio (SDARs, DAB), navigation systems (e.g. GPS, Glonass)
and C-band LNB (1st and 2nd stage LNA)
• Ku-band LNB front-end (2nd stage or 3rd stage LNA and active mixer)
• Ka-band oscillators (DROs)
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
• Robust ultra low noise amplifier based on Infineon´s reliable
high volume SiGe:C bipolar technology
• Unique combination of high end RF performance and robustness:
20 dBm maximum RF input power, 1.5 kV HBM ESD hardness
• Very high transition frequency fT = 75 GHz enables best in
class noise performance at high frequencies:
NFmin = 0.65 dB at 5.5 GHz, 1.1 dB at 12 GHz, 1.8 V, 5 mA
• High gain |S21|2 = 19 dB at 5.5 GHz, 1.8 V, 10 mA
• Ideal for low voltage applications e.g. VCC = 1.2 V and 1.8 V
(2.85 V, 3.3 V, 3.6 V requires corresponding collector resistor)
• Low power consumption, ideal for mobile applications
• Pb free (RoHS compliant) and halogen free very small thin
leadless package (package height 0.31 mm, ideal for modules)
• Qualification report according to AEC-Q101 available
TSLP-3-9
Product Name Package Pin Configuration Marking
BFR840L3RHESD TSLP-3-9 1 = B 2 = C 3 = E T8
BFR840L3RHESD
Maximum Ratings
Data Sheet 9 Revision 1.2, 2013-04-09
3 Maximum Ratings
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Table 3-1 Maximum Ratings at TA = 25 °C (unless otherwise specified)
Parameter Symbol Values Unit Note / Test Condition
Min. Max.
Collector emitter voltage VCEO –2.25
2.0
VTA = 25 °C
TA = -55 °C
Open base
Collector emitter voltage1)
1) VCES is identical to VCEO due to design
VCES –2.25
2.0
VTA = 25 °C
TA = -55 °C
E-B short circuited
Collector base voltage2)
2) VCBO is similar to VCEO due to design
VCB0 –2.9
2.6
VTA = 25 °C
TA = -55 °C
Open emitter
Base current IB-5 3 mA –
Collector current IC–35mA–
RF input power PRFin –20dBm–
ESD stress pulse VESD -1.5 1.5 kV HBM, all pins, acc. to
JESD22-A114
Total power dissipation3)
3) TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the pcb.
Ptot –75mWTS ≤ 111 °C
Junction temperature TJ– 150 °C –
Storage temperature TStg -55 150 °C –
BFR840L3RHESD
Thermal Characteristics
Data Sheet 10 Revision 1.2, 2013-04-09
4 Thermal Characteristics
Figure 4-1 Total Power Dissipation Ptot =f(TS)
Table 4-1 Thermal Resistance
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Junction - soldering point1)
1) For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
RthJS –521–K/W–
0 50 100 150
0
10
20
30
40
50
60
70
80
TS [°C]
Ptot [mW]
BFR840L3RHESD
Electrical Characteristics
Data Sheet 11 Revision 1.2, 2013-04-09
5 Electrical Characteristics
5.1 DC Characteristics
5.2 General AC Characteristics
Table 5-1 DC Characteristics at TA=25°C
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Collector emitter breakdown voltage V(BR)CEO 2.25 2.6 – V IC=1mA, IB=0
Open base
Collector emitter leakage current ICES ––400nAVCE =1.5V, VBE =0
E - B short circuited
Collector base leakage current ICBO ––400nAVCB =1.5V, IE=0
Open emitter
Emitter base leakage current IEBO ––10μAVEB =0.5V, IC=0
Open collector
DC current gain hFE 150 260 450 VCE =1.8V, IC = 10 mA
Pulse measured
Table 5-2 General AC Charact eri st ics at TA=25°C
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Transition frequency fT–75–GHzVCE =1.8V, IC=25mA
f=2GHz
Collector base capacitance CCB –52–fFVCB =1.8V, VBE =0
f=1MHz
Emitter grounded
Collector emitter capacitance CCE –0.34–pFVCE =1.8V, VBE =0
f=1MHz
Base grounded
Emitter base capacitance CEB –0.34–pFVEB =0.4V, VCB =0
f=1MHz
Collector grounded
BFR840L3RHESD
Electrical Characteristics
Data Sheet 12 Revision 1.2, 2013-04-09
5.3 Frequency Dependent AC Characteristics
Measurement setup is a test fixture with Bias T’s in a 50 Ω system, TA = 25 °C
Figure 5-1 BFR840L3RHESD Testing Circuit
Table 5-3 AC Characteristics, VCE = 1.8 V, f=0.45GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Power gain dB
Maximum power gain Gms –31– IC=10mA
Transducer gain |S21|2–27– IC=10mA
Minimum Noise Figure dB
Minimum noise figure NFmin –0.5– IC=5mA
Associated gain Gass –27– IC=5mA
Linearity dBm ZS= ZL=50 Ω
1 dB compression point at output OP1dB –4– IC=10mA
3rd order intercept point at output OIP3 –21– IC=10mA
Bias -T
Bias -T
TSLP-3-9 testing circuit
RF-
In
RF-
Out
VB
In
VC
Out
GND
12
3
BFR840L3RHESD
Electrical Characteristics
Data Sheet 13 Revision 1.2, 2013-04-09
Table 5-4 AC Characteristics, VCE = 1.8 V, f=0.9GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Power gain dB
Maximum power gain Gms –29– IC=10mA
Transducer gain |S21|2–26.5– IC=10mA
Minimum Noise Figure dB
Minimum noise figure NFmin –0.55– IC=5mA
Associated gain Gass –26– IC=5mA
Linearity dBm ZS= ZL=50 Ω
1 dB compression point at output OP1dB –4– IC=10mA
3rd order intercept point at output OIP3 –18.5– IC=10mA
Table 5-5 AC Characteristics, VCE = 1.8 V, f=1.5GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Power gain dB
Maximum power gain Gms –27– IC=10mA
Transducer gain |S21|2–25.5– IC=10mA
Minimum Noise Figure dB
Minimum noise figure NFmin –0.55– IC=5mA
Associated gain Gass –24.5– IC=5mA
Linearity dBm ZS= ZL=50 Ω
1 dB compression point at output OP1dB –4– IC=10mA
3rd order intercept point at output OIP3 –17– IC=10mA
Table 5-6 AC Characteristics, VCE = 1.8 V, f=1.9GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Power gain dB
Maximum power gain Gms –26.5– IC=10mA
Transducer gain |S21|2–25– IC=10mA
Minimum Noise Figure dB
Minimum noise figure NFmin –0.60– IC=5mA
Associated gain Gass –24– IC=5mA
Linearity dBm ZS= ZL=50 Ω
1 dB compression point at output OP1dB –4– IC=10mA
3rd order intercept point at output OIP3 –17– IC=10mA
BFR840L3RHESD
Electrical Characteristics
Data Sheet 14 Revision 1.2, 2013-04-09
Table 5-7 AC Characteristics, VCE = 1.8 V, f=2.4GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Power gain dB
Maximum power gain Gms –25.5– IC=10mA
Transducer gain |S21|2–24– IC=10mA
Minimum Noise Figure dB
Minimum noise figure NFmin –0.6– IC=5mA
Associated gain Gass –22.5– IC=5mA
Linearity dBm ZS= ZL=50 Ω
1 dB compression point at output OP1dB –4– IC=10mA
3rd order intercept point at output OIP3 –17– IC=10mA
Table 5-8 AC Characteristics, VCE = 1.8 V, f=3.5GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Power gain dB
Maximum power gain Gms –23.5– IC=10mA
Transducer gain |S21|2–22– IC=10mA
Minimum Noise Figure dB
Minimum noise figure NFmin –0.6– IC=5mA
Associated gain Gass –20– IC=5mA
Linearity dBm ZS= ZL=50 Ω
1 dB compression point at output OP1dB –4– IC=10mA
3rd order intercept point at output OIP3 –18– IC=10mA
Table 5-9 AC Characteristics, VCE = 1.8 V, f= 5.5 GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Power gain dB
Maximum power gain Gms –22– IC=10mA
Transducer gain |S21|2–19– IC=10mA
Minimum Noise Figure dB
Minimum noise figure NFmin –0.65– IC=5mA
Associated gain Gass –16.5– IC=5mA
Linearity dBm ZS= ZL=50 Ω
1 dB compression point at output OP1dB –4– IC=10mA
3rd order intercept point at output OIP3 –18– IC=10mA
BFR840L3RHESD
Electrical Characteristics
Data Sheet 15 Revision 1.2, 2013-04-09
Note:
1. OIP3 value depends on the termination of all intermodulation frequency components. The termination used for
this measurement is 50 Ω from 0.2 MHz to 12 GHz.
Table 5-10 AC Characteristics, VCE = 1.8 V, f=10GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Power gain dB
Maximum power gain Gma –16– IC=10mA
Transducer gain |S21|2–13– IC=10mA
Minimum Noise Figure dB
Minimum noise figure NFmin –0.9– IC=5mA
Associated gain Gass –11.5– IC=5mA
Linearity dBm ZS= ZL=50 Ω
1 dB compression point at output OP1dB –3– IC=10mA
3rd order intercept point at output OIP3 –17– IC=10mA
Table 5-11 AC Characteristics, VCE = 1.8 V, f=12GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Power gain dB
Maximum power gain Gma –13.5– IC=10mA
Transducer gain |S21|2–10– IC=10mA
Minimum Noise Figure dB
Minimum noise figure NFmin –1.1– IC=5mA
Associated gain Gass –12– IC=5mA
Linearity dBm ZS= ZL=50 Ω
1 dB compression point at output OP1dB –3– IC=10mA
3rd order intercept point at output OIP3 –17– IC=10mA
BFR840L3RHESD
Electrical Characteristics
Data Sheet 16 Revision 1.2, 2013-04-09
5.4 Characteristic DC Diagrams
Figure 5-2 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter
Figure 5-3 DC Current Gain hFE = f (IC), VCE = 1.8 V
0 0.5 1 1.5 2 2.5 3
0
2
4
6
8
10
12
14
16
18
VCE [V]
IC [mA]
IB = 10µA
IB = 20µA
IB = 30µA
IB = 40µA
IB = 50µA
IB = 60µA
IB = 70µA
10−2 10−1 100101102
102
103
I
C
[mA]
h
FE
BFR840L3RHESD
Electrical Characteristics
Data Sheet 17 Revision 1.2, 2013-04-09
Figure 5-4 Collector Curren t vs. Base Emitter Forward Voltage IC = f (VBE), VCE = 1.8 V
Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 1.8 V
0.5 0.6 0.7 0.8 0.9
10−5
10−4
10−3
10−2
10−1
100
101
102
VBE [V]
IC [mA]
0.5 0.6 0.7 0.8 0.9
10−7
10−6
10−5
10−4
10−3
10−2
10−1
100
VBE [V]
IB [mA]
BFR840L3RHESD
Electrical Characteristics
Data Sheet 18 Revision 1.2, 2013-04-09
Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 1.8 V
0.3 0.4 0.5 0.6 0.7
10−11
10−10
10−9
10−8
10−7
10−6
VEB [V]
IB [A]
BFR840L3RHESD
Electrical Characteristics
Data Sheet 19 Revision 1.2, 2013-04-09
5.5 Characteristic AC Diagrams
Figure 5-7 Transition Frequency fT = f (IC), f = 2 GHz, VCE = Parameter
Figure 5-8 3rd Order Intercept Point at output OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameter
0 5 10 15 20 25 30 35 40
0
10
20
30
40
50
60
70
80
IC [mA]
fT [GHz]
2.00V
1.80V
1.50V
1.00V
0.50V
0 5 10 15 20 25 30
0
2
4
6
8
10
12
14
16
18
20
22
IC [mA]
OIP3 [dBm]
1.5V, 2400MHz
1.8V, 2400MHz
1.5V, 5500MHz
1.8V, 5500MHz
BFR840L3RHESD
Electrical Characteristics
Data Sheet 20 Revision 1.2, 2013-04-09
Figure 5-9 3rd Order Intercept Point at output OIP3 [dBm] = f (IC, VCE), ZS = ZL= 50 Ω, f = 5.5 GHz
Figure 5-10 Compression Point at output OP1dB [dBm] = f (IC, VCE), ZS = ZL= 50 Ω, f = 5.5 GHz
−3
−2
−10
1
1
2
2
3
3
4
4
5
5
5
6
6
6
7
7
7
8
8
8
8
9
9
9
9
10
10
10
10
1
1
11
11
11
12
12
12
1
2
13
13
13
13
14 14
14
14
15
15
15
15
1
5
16
16
16
16
17
17
17
17
17
18
18
18
18
1
9
19
18
VCE [V]
IC [mA]
1 1.2 1.4 1.6 1.8 2
5
10
15
20
25
30
−8
−7
−6
−5
−4
−4
−3
−3
−2
−2
−1
−1
−1
−1
0
0
0
0
0
1
1
1
1
1
1
1
2
2
2
2
2
2
2
33
3
3
3
3
3
4
4
4
4
4
4
5
5
5
5
5
6
6
6
6
7
7
VCE [V]
IC [mA]
1 1.2 1.4 1.6 1.8 2
5
10
15
20
25
30
BFR840L3RHESD
Electrical Characteristics
Data Sheet 21 Revision 1.2, 2013-04-09
Figure 5-11 Collector Base Capacitance CCB = f (VCB), f= 1 MHz
Figure 5-12 Gain Gma, Gms, IS21I² = f (f), VCE = 1.8 V, IC = 10 mA
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
0.045
0.05
0.055
0.06
0.065
VCB [V]
CCB [pF]
0 2 4 6 8 10 12
0
4
8
12
16
20
24
28
32
36
40
f [GHz]
G [dB]
Gms
Gma
|S21|2
BFR840L3RHESD
Electrical Characteristics
Data Sheet 22 Revision 1.2, 2013-04-09
Figure 5-13 Maximum Power Gain Gmax = f (IC), VCE = 1.8 V, f = Parameter in GHz
Figure 5-14 Maximum Power Gain Gmax = f (VCE), IC = 10 mA, f= Parameter in GHz
0 5 10 15 20 25 30 35 40 45
6
9
12
15
18
21
24
27
30
33
36
IC [mA]
Gmax [dB]
0.9GHz
1.5GHz
1.9GHz
2.4GHz
3.5GHz
5.5GHz
10.0GHz
12.0GHz
0 0.5 1 1.5 2 2.5
6
9
12
15
18
21
24
27
30
33
36
VCE [V]
Gmax [dB]
0.9GHz
1.5GHz
1.9GHz
2.4GHz
3.5GHz
5.5GHz
10.0GHz
12.0GHz
BFR840L3RHESD
Electrical Characteristics
Data Sheet 23 Revision 1.2, 2013-04-09
Figure 5-15 Input Reflection Coefficient S11 = f (f), VCE = 1.8 V, IC = 5 / 10 / 15 mA
Figure 5-16 Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 1.8 V, IC = 5 / 10 / 15 mA
10.1 0.2 0.3 0.4 0.5 21.5 3 4 5
0
1
−1
1.5
−1.5
2
−2
3
−3
4
−4
5
−5
10
−10
0.5
−0.5
0.1
−0.1
0.2
−0.2
0.3
−0.3
0.4
−0.4
1.0
2.0
7.0
1.0
2.0
4.0
6.0
10.0
12.0 0.07 to 12 GHz
8.0
5.0mA
10mA
15mA
10.1 0.2 0.3 0.4 0.5 21.5 3 4 5
0
1
−1
1.5
−1.5
2
−2
3
−3
4
−4
5
−5
10
−10
0.5
−0.5
0.1
−0.1
0.2
−0.2
0.3
−0.3
0.4
−0.4
0.9
1.5
1.8
2.4
3.5
4.0
5.0
5.5
6.07.0
8.0
9.0
10.0
11.0
12.0
0.9
2.4
3.5
5.5
10.0
12.0
0.9
2.4
5.5
10.0
12.0
5mA
10mA
15mA
BFR840L3RHESD
Electrical Characteristics
Data Sheet 24 Revision 1.2, 2013-04-09
Figure 5-17 Output Reflection Coefficient S22 = f (f), VCE = 1.8 V, IC = 5 / 10 / 15 mA
Figure 5-18 Noise Figure NFmin = f (f), VCE = 1.8 V, IC = 5 / 10 / 15 mA, ZS = Zopt
10.1 0.2 0.3 0.4 0.5 21.5 3 4 5
0
1
−1
1.5
−1.5
2
−2
3
−3
4
−4
5
−5
10
−10
0.5
−0.5
0.1
−0.1
0.2
−0.2
0.3
−0.3
0.4
−0.4
1.0
2.0
3.0
4.0
6.0
8.0
10.0
12.0
1.0
1.0
0.07 to 12 GHz
5.0mA
10mA
15mA
0 2 4 6 8 10 12
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
f [GHz]
NFmin [dB]
IC = 5.0mA
IC = 10mA
IC = 15mA
BFR840L3RHESD
Electrical Characteristics
Data Sheet 25 Revision 1.2, 2013-04-09
Figure 5-19 Noise Figure NFmin = f (IC), VCE = 1.8 V, ZS = Zopt, f = Parameter in GHz
Figure 5-20 Noise Figure NF50 = f (IC), VCE = 1.8 V, ZS = 50 Ω, f = Parameter in GHz
Note:The curves shown in this chapter have been g enerated using typical devices but shall not be considered as
a guarantee that all devices have identical characteristic curves. TA=25°C.
0 5 10 15 20
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
IC [mA]
NFmin [dB]
f = 0.9GHz
f = 2.4GHz
f = 3.5GHz
f = 5.5GHz
f = 10GHz
f = 12GHz
0 5 10 15 20
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
IC [mA]
NF50 [dB]
f = 0.9GHz
f = 2.4GHz
f = 3.5GHz
f = 5.5GHz
f = 10GHz
f = 12GHz
BFR840L3RHESD
Simulation Data
Data Sheet 26 Revision 1.2, 2013-04-09
6 Simulation Data
For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please
refer to our internet website. Please consult our website and download the latest versions before actually starting
your design.
You find the BFR840L3RHESD SPICE GP model in the internet in MWO- and ADS-format, which you can import
into these circuit simulation tools very quickly and conveniently. The model already contains the package
parasitics and is ready to use for DC and high frequency simulations. The terminals of the model circuit correspond
to the pin configuration of the device.
The model parameters have been extracted and verified up to 12 GHz using typical devices. The
BFR840L3RHESD SPICE GP model reflects the typical DC- and RF-performance within the limitations which are
given by the SPICE GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as
well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and
intermodulation have been extracted.
BFR840L3RHESD
Package Information TSLP-3-9
Data Sheet 27 Revision 1.2, 2013-04-09
7 Package Information TSLP-3-9
Figure 7-1 Package Outline
Figure 7-2 Package Footprint
Figure 7-3 Marking Description (Marking BFR840L3RHESD: T8)
Figure 7-4 Tape Dimensions
TSLP-3-9-PO V01
Pin 1
marking
Top view Bottom view
21
±0.035
0.5
3
0.575
1)
±0.035
0.4
1)
±0.035
2x
0.25
1)
0.35
±0.035
2 x 0.15
1)
1) Dimension applies to plated terminal
0.31
-0.02
+0.01
±0.05
±0.05
±0.05
1
0.6
±0.05
Stencil aperturesCopper Solder mask
0.38
0.2
0.315
0.95
0.5
0.17
0.255
0.2
0.45
0.225
1
0.6
0.225
0.15
0.35
0.2
R0.1
R0.19
TSLP-3-9-FP V01
TSLP-3-9-TP V02
0.8
4
1.2
0.35
Pin 1
marking
8
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BFR840L3RHESDE6327XTSA1 BFR 840L3RHESD E6327