ZXMN6A11DN8 60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary BVDSS Features and Benefits ID MAX RDS(ON) Max TA = +25C 120m @ VGS = 10V 3.2A 180m @ VGS = 4.5V 2.6A 60V Low On-Resistance Fast Switching Speed Low Threshold Low Gate Drive Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. DC-DC Converters Power Management Functions Motor Control S1 D1 G1 D1 S2 D2 G2 D2 Top View Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish - Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (Approximate) D1 G1 D2 G2 S1 Top View Pin Configuration S2 Equivalent Circuit Ordering Information (Note 4) Part Number ZXMN6A11DN8TA Notes: Case SO-8 Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information ZXMN6A11D = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 19 = 2019) WW = Week (01 to 53) ZXMN6A11DN8 Document number: DS33555 Rev. 5 - 2 1 of 6 www.diodes.com August 2019 (c) Diodes Incorporated ZXMN6A11DN8 Maximum Ratings (@TA = +25C, unless otherwise specified.) ADVANCE INFORMATION Characteristic Drain-Source Voltage Gate-Source Voltage Steady State t<10s Continuous Drain Current (VGS = 10V) Symbol VDSS VGSS Value 60 20 Unit V V ID 3.2 2.6 2.5 A IS IDM ISM 3.1 13.7 13.7 A A A Value 1.25 100 1.8 70 2.1 60 -55 to +150 Unit W C/W W C/W W C/W C TA = +25C (Note 6) TA = +70C (Note 6) TA = +25C (Note 5) Maximum Body Diode Forward Current (Note 6) Pulsed Drain Current (Note 7) Pulsed Body Diode Forward Current ((Note 7) Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5 & Note 8) Thermal Resistance, Junction to Ambient (Note 5 & Note 8) Total Power Dissipation(Note 5 & Note 9) Thermal Resistance, Junction to Ambient (Note 5 & Note 9) Total Power Dissipation (Note 6 & Note 8) Thermal Resistance, Junction to Ambient (Note 6 & Note 8) Operating and Storage Temperature Range Electrical Characteristics Symbol PD RJA PD RJA PD RJA TJ, TSTG (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 10) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 10) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 1 100 V A nA VGS = 0V, ID = 250A VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VGS(TH) RDS(ON) gfs VSD 4.9 0.85 120 180 0.95 V Static Drain-Source On-Resistance 1 VDS = VGS, ID = 250A VGS = 10V, ID = 2.5A VGS = 4.5V, ID = 2A VDS = 15V, ID = 2.5A TJ = +25C, VGS = 0V, IS = 2.8A Ciss Coss Crss Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR 330 35.2 17.1 5.7 3 1.25 0.86 1.95 3.5 8.2 4.6 21.5 20.5 Forward Transconductance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 11) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (VGS = 10V) Total Gate Charge (VGS = 5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: m S V Test Condition pF VDS = 40V, VGS = 0V f = 1.0MHz nC VDS = 15V, ID = 2.5A ns VGS = 10V, VDD = 30V, Rg = 6, ID = 2.5A ns nC TJ = +25C, IS = 2.5A, di/dt = 100A/s TJ = +25C, IS = 2.5A, di/dt = 100A/s 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 6. For a device surface mounted on FR4 PCB. 7. Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction temperature. 8. For a dual device with one active die. 9. For a device with two active dice running at equal power. 10. Short duration pulse test used to minimize self-heating effect. 11. Guaranteed by design. Not subject to product testing. ZXMN6A11DN8 Document number: DS33555 Rev. 5 - 2 2 of 6 www.diodes.com August 2019 (c) Diodes Incorporated ADVANCE INFORMATION ZXMN6A11DN8 () ID = 250A ZXMN6A11DN8 Document number: DS33555 Rev. 5 - 2 3 of 6 www.diodes.com August 2019 (c) Diodes Incorporated ADVANCE INFORMATION ZXMN6A11DN8 tD(ON) tR t(ON) ZXMN6A11DN8 Document number: DS33555 Rev. 5 - 2 tR tD(OFF) t(ON) 4 of 6 www.diodes.com August 2019 (c) Diodes Incorporated ZXMN6A11DN8 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. ADVANCE INFORMATION SO-8 E 1 b E1 h ) ides All s 9 ( 1 0. e c 4 3 A R Q 45 7 A1 L E0 Gauge Plane Seating Plane SO-8 Dim Min Max Typ A 1.40 1.50 1.45 A1 0.10 0.20 0.15 b 0.30 0.50 0.40 c 0.15 0.25 0.20 D 4.85 4.95 4.90 E 5.90 6.10 6.00 E1 3.80 3.90 3.85 E0 3.85 3.95 3.90 e --1.27 h --0.35 L 0.62 0.82 0.72 Q 0.60 0.70 0.65 All Dimensions in mm D Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 X1 Dimensions Value (in mm) C 1.27 X 0.802 X1 4.612 Y 1.505 Y1 6.50 Y1 Y C ZXMN6A11DN8 Document number: DS33555 Rev. 5 - 2 X 5 of 6 www.diodes.com August 2019 (c) Diodes Incorporated ZXMN6A11DN8 ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright (c) 2019, Diodes Incorporated www.diodes.com ZXMN6A11DN8 Document number: DS33555 Rev. 5 - 2 6 of 6 www.diodes.com August 2019 (c) Diodes Incorporated