ZXMN6A11DN8
Document number: DS33555 Rev. 5 - 2
1 of 6
www.diodes.com
August 2019
© Diodes Incorporated
ZXMN6A11DN8
ADVANCE INFO R MA T I O N
60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
RDS(ON) Max
ID MAX
TA = +25°C
60V
120mΩ @ VGS = 10V
3.2A
180mΩ @ VGS = 4.5V
2.6A
Description and Applications
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
DC-DC Converters
Power Management Functions
Motor Control
Features and Benefits
Low On-Resistance
Fast Switching Speed
Low Threshold
Low Gate Drive
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (Approximate)
Ordering Information (Note 4)
Part Number
Case
Packaging
ZXMN6A11DN8TA
SO-8
2,500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
Top View
Top View
Pin Configuration
Equivalent Circuit
D2
S2
G2
D1
S1
G1
D
1
S
1
G
1
S
2
2
D
1
D
2
D
2
G
ZXMN6A11D = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 19 = 2019)
WW = Week (01 to 53)
ZXMN6A11DN8
Document number: DS33555 Rev. 5 - 2
2 of 6
www.diodes.com
August 2019
© Diodes Incorporated
ZXMN6A11DN8
ADVANCE INFO R MA T I O N
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (VGS = 10V)
Steady
State
t<10s
TA = +25°C (Note 6)
TA = +70°C (Note 6)
TA = +25°C (Note 5)
ID
3.2
2.6
2.5
A
Maximum Body Diode Forward Current (Note 6)
IS
3.1
A
Pulsed Drain Current (Note 7)
IDM
13.7
A
Pulsed Body Diode Forward Current ((Note 7)
ISM
13.7
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5 & Note 8)
PD
1.25
W
Thermal Resistance, Junction to Ambient (Note 5 & Note 8)
RθJA
100
°C/W
Total Power Dissipation(Note 5 & Note 9)
PD
1.8
W
Thermal Resistance, Junction to Ambient (Note 5 & Note 9)
RθJA
70
°C/W
Total Power Dissipation (Note 6 & Note 8)
PD
2.1
W
Thermal Resistance, Junction to Ambient (Note 6 & Note 8)
RθJA
60
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 10)
Drain-Source Breakdown Voltage
BVDSS
60
V
VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current
IDSS
1
µA
VDS = 60V, VGS = 0V
Gate-Source Leakage
IGSS
100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 10)
Gate Threshold Voltage
VGS(TH)
1
V
VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance
RDS(ON)
120
mΩ
VGS = 10V, ID = 2.5A
180
VGS = 4.5V, ID = 2A
Forward Transconductance
gfs
4.9
S
VDS = 15V, ID = 2.5A
Diode Forward Voltage
VSD
0.85
0.95
V
TJ = +25°C, VGS = 0V, IS = 2.8A
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
Ciss
330
pF
VDS = 40V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
35.2
Reverse Transfer Capacitance
Crss
17.1
Total Gate Charge (VGS = 10V)
Qg
5.7
nC
VDS = 15V, ID = 2.5A
Total Gate Charge (VGS = 5V)
Qg
3
Gate-Source Charge
Qgs
1.25
Gate-Drain Charge
Qgd
0.86
Turn-On Delay Time
tD(ON)
1.95
ns
VGS = 10V, VDD = 30V, Rg = 6Ω,
ID = 2.5A
Turn-On Rise Time
tR
3.5
Turn-Off Delay Time
tD(OFF)
8.2
Turn-Off Fall Time
tF
4.6
Body Diode Reverse Recovery Time
tRR
21.5
ns
TJ = +25°C, IS = 2.5A, di/dt = 100A/μs
Body Diode Reverse Recovery Charge
QRR
20.5
nC
TJ = +25°C, IS = 2.5A, di/dt = 100A/µs
Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
6. For a device surface mounted on FR4 PCB.
7. Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300µs - pulse width limited by maximum junction temperature.
8. For a dual device with one active die.
9. For a device with two active dice running at equal power.
10. Short duration pulse test used to minimize self-heating effect.
11. Guaranteed by design. Not subject to product testing.
ZXMN6A11DN8
Document number: DS33555 Rev. 5 - 2
5 of 6
www.diodes.com
August 2019
© Diodes Incorporated
ZXMN6A11DN8
ADVANCE INFO R MA T I O N
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SO-8
1
b
e
E
A
A1
9° (All sides)
4°± 3°
c
Q
h
45°
R 0.1
7°
D
E0
E1
L
Seating Plane
Gauge Plane
SO-8
Dim
Min
Max
Typ
A
1.40
1.50
1.45
A1
0.10
0.20
0.15
b
0.30
0.50
0.40
c
0.15
0.25
0.20
D
4.85
4.95
4.90
E
5.90
6.10
6.00
E1
3.80
3.90
3.85
E0
3.85
3.95
3.90
e
--
--
1.27
h
--
--
0.35
L
0.62
0.82
0.72
Q
0.60
0.70
0.65
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SO-8
CX
Y
Y1
X1
Dimensions
Value (in mm)
C
1.27
X
0.802
X1
4.612
Y
1.505
Y1
6.50
ZXMN6A11DN8
Document number: DS33555 Rev. 5 - 2
6 of 6
www.diodes.com
August 2019
© Diodes Incorporated
ZXMN6A11DN8
ADVANCE INFO R MA T I O N
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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