IRF143 - Intersil Corporation

File Number

2306.3

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

IRF140

28A, 100V, 0.077 Ohm, N-Channel

Power MOSFET

This N-Channel enhancement mode silicon gate power ﬁeld

effect transistor is an advanced power MOSFET designed,

tested, and guaranteed to withstand a speciﬁed level of

energy in the breakdown avalanche mode of operation. All of

these power MOSFETs are designed for applications such

as switching regulators, switching convertors, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

Formerly developmental type TA17421.

Features

• 28A, 100V

•r

DS(ON) = 0.077Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power-Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

Symbol

Packaging

JEDEC TO-204AE

Ordering Information

PART NUMBER PACKAGE BRAND

IRF140 TO-204AE IRF140

NO TE: When ordering, use the entire part number .

DRAIN

(FLANGE)

SOURCE (PIN 2)

GATE (PIN 1)

Data Sheet March 1999

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciﬁed

IRF140 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS 100 V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 100 V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

TC= 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID28

20 A

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM 110 A

Gate To Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD150 W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS 100 mJ

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG -55 to 175 oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ= 25oC to 150oC.

Electrical Speciﬁcations TC = 25oC, Unless Otherwise Speciﬁed

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 10) 100 - - V

Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250µA 2.0 - 4.0 V

Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 25 µA

VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 150oC - - 250 µA

On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V 28 - - A

Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA

Drain to Source On Resistance (Note 2) rDS(ON) ID = 17A, VGS = 10V (Figures 8, 9) - 0.07 0.077 Ω

Forward Transconductance (Note 2) gfs VDS > ID(ON) x rDS(ON)MAX, ID = 17A (Figure 12) 8.7 13 - S

Turn-On Delay Time tD(ON) VDD = 50V, ID≈28A, RG = 9.1Ω, RL = 1.7Ω

(Figures 17, 18) MOSFET Switching Times are

Essentially Independent of Operating Temperature

-1623ns

Rise Time tr- 27 110 ns

Turn-Off Delay Time tD(OFF) -3860ns

Fall Time tf-1475ns

Total Gate Charge

(Gate to Source + Gate to Drain) Qg(TOT) VGS = 10V, ID = 28A, VDS = 0.8 x Rated BVDSS

Ig(REF) = 1.5mA (Figures 14, 19, 20) Gate Charge is

Essentially Independent of Operating Temperature

-3859nC

Gate to Source Charge Qgs -9-nC

Gate to Drain “Miller” Charge Qgd -21-nC

Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 11) - 1275 - pF

Output Capacitance COSS - 550 - pF

Reverse Transfer Capacitance CRSS - 160 - pF

Internal Drain Inductance LDMeasured between the

Contact Screw on the

Flange that is Closer to

Source and Gate Pins and

the Center of Die

Modified MOSFET

Symbol Showing the

Internal Device

Inductances

- 5.0 - nH

Internal Source Inductance LSMeasured from the Source

Lead, 6mm (0.25in) from

the Flange and the Source

Bonding Pad

- 12.5 - nH

Thermal Resistance, Junction to Case RθJC - - 1.0 oC/W

Thermal Resistance, Junction to Ambient RθJA Free Air Operation - - 30 oC/W

IRF140

SourceTo Drain Diode Speciﬁcations

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current ISD Modified MOSFET

Symbol Showing the

Integral Reverse P-N

Junction Rectifier

- - 28 A

Pulse Source to Drain Current

(Note 3) ISDM - - 110 A

Drain to Source Diode Voltage (Note 2) VSD TJ = 25oC, ISD = 28A, VGS = 0V (Figure 13) - - 2.5 V

Reverse Recovery Time trr TJ = 25oC, ISD = 28A, dISD/dt = 100A/µs 70 150 300 ns

Reverse Recovery Charge QRR TJ = 25oC, ISD = 28A, dISD/dt = 100A/µs 0.44 0.9 1.9 µC

NOTES:

2. Pulse Test: Pulse Width ≤300µs, Duty Cycle ≤ 2%.

3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance Curve (Figure 3).

4. VDD = 25V, starting TJ = 25oC, L = 190µH, RG = 25Ω, peak IAS = 28A (Figures 15, 16).

Typical Performance Curves

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

TC, CASE TEMPERATURE (oC)

25 50 75 100 125 150 175

POWER DISSIPATION MULTIPLIER

0.2

0.4

0.6

0.8

1.0

1.2 30

025 50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

ID, DRAIN CURRENT (A)

0.1

10-2

10-3

10-5 10-4 10-3 10-2 0.1 1 10

t1, RECTANGULAR PULSE DURATION (S)

PDM

t1t2

NOTES:

DUTY FACTOR: D = t1/t2

PEAK TJ = PDM x ZθJC + TC

0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

ZθJC,TRANSIENT THERMAL

IMPEDANCE (oC/W)

IRF140

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS

FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

Typical Performance Curves

(Continued)

110100 1000

VDS, DRAIN TO SOURCE VOLTAGE (V)

1000

100

ID, DRAIN CURRENT (A)

TC = 25oC

TJ = MAX RATED

SINGLE PULSE

OPERATION IN

THIS AREA LIMITED

BY rDS(ON)

100µs

10µs

1ms

10ms

050403020100 VDS, DRAIN TO SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

80µs PULSE TEST

VGS = 8V

VGS = 4V

VGS = 5V

VGS = 6V

VGS = 7V

VGS = 10V

05.04.03.02.01.00 VDS, DRAIN TO SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

PULSE DURATION = 80µsVGS = 8V

VGS = 4V

VGS = 5V

VGS = 6V

VGS = 7V

VGS = 10V

0246810

102

0.1

VGS, GATE TO SOURCE VOLTAGE (V)

ISD, SOURCE TO DRAIN CURRENT (A)

TJ = 175oCTJ = 25oC

80µs PULSE TEST

VDS ≥50V

1.0

0.8

0.6

0.4

0.2

00 25 50 75 100 125

ID, DRAIN CURRENT (A)

rDS(ON), DRAIN TO SOURCE

ON RESISTANCE

80µs PULSE TEST

VGS = 10V

VGS = 20V

3.0

2.4

1.8

1.2

0.6

NORMALIZED DRAIN TO SOURCE

ON RESISTANCE

0 40 80 120 160-40 TJ, JUNCTION TEMPERATURE (oC)

ID = 17A

VGS = 10V

IRF140

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

Typical Performance Curves

(Continued)

1.25

1.15

1.05

0.95

0.85

0.75

NORMALIZED DRAIN TO SOURCE

BREAKDOWN VOLTAGE

0 40 80 120 160-40 TJ, JUNCTION TEMPERATURE (oC)

ID = 250µA

VDS, DRAIN TO SOURCE VOLTAGE (V)

C, CAPACITANCE (pF)

3000

2400

1800

1200

600

VGS = 0V, f = 1MHz

CISS = CGS + CGD

CRSS = CGD

COSS ≈ CDS + CGD

110 102

CISS

COSS

CRSS

001020304050

ID, DRAIN CURRENT (A)

gfs, TRANSCONDUCTANCE (S)

VDS ≥50V

80µs PULSE TEST

TJ = 175oC

TJ = 25oC

0 0.6 1.2 1.8 2.4 3.0

103

102

VSD, SOURCE TO DRAIN VOLTAGE (V)

ISD, SOURCE TO DRAIN CURRENT (A)

TJ = 175oC

TJ = 25oC

00 1224364860

Qg(TOT), TOTAL GATE CHARGE (nC)

VGS, GATE TO SOURCE VOLTAGE (V)

ID = 28A VDS = 80V

VDS = 50V

VDS = 20V

IRF140

Test Circuits and Waveforms

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS

VGS

0.01Ω

IAS

VDS

VDD

DUT

VARY tP TO OBTAIN

REQUIRED PEAK IAS

VDD

VDS

BVDSS

IAS

tAV

VGS

DUT

-VDD

tON

td(ON)

90%

10%

VDS 90%

10%

td(OFF)

tOFF

90%

50%

10% PULSE WIDTH

VGS

0.3µF

12V

BATTERY 50kΩ

VDS

DUT

Ig(REF)

(ISOLATED

VDS

0.2µF

CURRENT

REGULATOR

ID CURRENT

SAMPLING

IG CURRENT

SAMPLING

SUPPLY)

RESISTOR RESISTOR

SAME TYPE

AS DUT

Qg(TOT)

Qgd

Qgs

VDS

VGS

VDD

Ig(REF)

IRF140

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certiﬁcation.

Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-

out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and

reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result

from its use. No license is gr anted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

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IRF140