Power MOSFETs
PRODUCT GUIDE
2004-3
semiconductor
2004
http://www.semicon.toshiba.co.jp/eng
CONTENTS
1Features and Structure ..........................................................4
2New Power MOSFET Products .............................................5
3Selection Guide ................................................................6 - 9
4Power MOSFET Characteristics
1. SOP Series...............................................................10 - 15
2. VS Series..................................................................16 - 17
3. TFP Series...............................................................18 - 21
4. TO-220SIS π-MOSIV/VI Series
..................................
22 - 23
5. L
2
-π-MOSV
......................................................................
24 - 25
6. 2.5-V Drive π-MOSV
..............................................................
25
7. U-MOSIII Series (Trench Type).......................................26
8. π-MOSVII Series .............................................................27
9. π-MOSV Series (V
DSS
= 150 to 250 V)............................28
10. π-MOSV Series (V
DSS
= 400 to 700 V)...........................29
11.
High-Speed
π-MOSV Series (V
DSS
= 450 to 600 V).........30
12. π-MOSIII /IV Series (V
DSS
= 800 to 1000 V)....................31
5Power MOSFET Modules ....................................................32
6Product List...................................................................33 - 36
7Superseded Products ...................................................37 - 38
8
Final-Phase and Discontinued Products
.............................38 - 39
9Package List .................................................................40 - 47
32
Features and Structure
4
Power MOSFETs
All power MOSFETs have the following features:
1) No carrier storage effect
Superior frequency and switching characteristics
2) Rugged without current concentration
3) Low drive power due to voltage-controlling device
4) Easy parallel connection
π-MOS
Toshiba Power MOSFETs use the double-diffusion MOS (D-MOS)
structure, which produces a high-withstand voltage, to form channels.
This structure is especially well suited to high-withstad voltage and
high-current devices.
A high level of integration yields a high-performance power MOSFET
with low On-resistance and low power loss.
U-MOS
Higher channel density is achieved by connecting channel vertically
as having a U-groove at the gate region and this structure reduces
On-resistance to lower than other MOSFET structures. This is an
ideal for low-voltage power MOSFETs.
Gate
Double-Diffusion Structure
n+
n+
PP
n+
n-
Source
Gate
Trench Structure
Drain
Drain
n+
n+
PP
n+
n-
Source
Toshiba Power MOSFETs have the following
additional features:
Structure of Toshiba Power MOSFETs
Drain
Gate
Source
Protection
zener diode
1) Guaranteed avalanche withstand capability No absorber circuit required
2) Improved the function of built-in diodes greatly expands the possibility of circuit design
3) High ruggedness enables to take better margin for circuit design
4) High-speed switching contributes to equipment's high-speed operation
5) Low R
(DS)ON
reduces power consumption of equipment
6) Downsized packages enable equipment's size to be compact and thin
7) Low drive loss reduces power consumption of equipment
8) Zener diode between gate and source
Improved electrostatic withstand between gate and source
New Power MOSFET Products
5
DC-DC converters
PDP drivers
Motor drivers
Applica-
tions
TFP (Thin Flat Package) Series is comprised of new high-
performance devices with a 4-pin structure for separating input and
output. TFP Series devices have the same ratings as existing
TO-220SM package devices; however, the volume of them occupies
only 42% of the volume of TO-220SM package devices.
DC-DC converters
Motor drives
Solenoids and lamp drives
Applica-
tions
High-integration is achieved using trench structure technique. Low-
voltage driving (V
GS
= 4 V) is possible because of ultra-low On-
resistance.
Monitors
DC-DC converters
PDP drives
Applica-
tions
The π-MOS Series is comprised of low-cost devices which are ideal
for use in monitors, especially for frequency control and S-shape
correction.
Inverters
Motor drives
AC adapters
Applica-
tions
π-MOS V High-Speed Series is new product series and achieves
faster switching speed than π-MOS V Series which are currently
well-established in the marketplace.
Two types of series are available:
High-Speed Switching Series
High-Speed Diode Series
Switching power supplies
Switching power supplies
AC adapters
Lighting inverters
Applica-
tions
This Series is comprised of highly integrated, high-performance,
high-breakdown-voltage and low-cost products with V
DSS
in the
range 400 V to 600 V which are ideal for use in 100-V AC input-
switching power supplies.
Switching power supplies
Applica-
tions
This Series is comprised of highly integrated, high-performance,
high-breakdown-voltage and low-cost products with V
DSS
in the
range 800 V to 900 V which are ideal for use in 200-V AC input-
switching power supplies.
VS Series and PS Series products are very compact and thin, and
suitable for various items of portable electronic devices.
Portable phones
Notebook PCs
Portable electronic devises
Applica-
tions
Applica-
tions
Applica-
tions
New Power MOSFET Products
All products have a protection zener diode between gate and source.
Avalanche withstand capability in single and series Power MOSFET products
SOP Series VDSS = 20 V to 60 V
VS and PS Series
VDSS = 12 to 30 V
TFP (Thin Flat Package)
Series
This series downsized 2.8-mm package height compared to the
conventional package, TO220NIS. In addition, the chip design
optimization, π-MOS IV / VI Series housed in this new package,
reduced Qg characteristics.
DC-DC converters AC adapters
Motor drives
Switching power supplies
TO-220SIS Series V
DSS
= 450 to 900 V
U-MOS
III
Series V
DSS
= 40 V to 100 V
With employing submicron technology and reducing gate charge,
this latest series realized extremely fast speed and low R
DS(ON)
.
Digital amps
DC-DC converters
Motor drivers
π-MOS
VII
Series VDSS = 100 V
π-MOS
V
Series V
DSS
= 400 V to 600 V
π-MOS
III
Series V
DSS
= 800 V to 900 V
π-MOS
V
Series V
DSS
= 150 V to 250 V
π-MOS
V
High-Speed Series V
DSS
= 250 V to 600 V
SOP Series products are compact and thin, and require only a small
mounting area. They are suitable for lithium-ion secondary battery
protection circuits and for notebook PCs.
Lithium-ion secondary battery protection circuits
Notebook PCs
Portable electronic devices
Applica-
tions
Selection Guide
76
2SK3473(1.6)
P TPC8104-H
(0.065)
NS#
TPCF8A01(0.049)
N#
TPCF8201(0.049)
TPCS8209(0.05)
N TPCF8001(0.032)
P
TPCF8301
(0.11)
V
DSS
(V)
I
D
(A)
16 20 30 40
# 2SK2549(0.29)
# 2SJ465(0.71)
# 2SK2493(0.1)
# 2SJ439(0.2)
N#
TPC6004
(0.024)
2SJ511(0.45)
2SK2964(0.18)
CP
TPC8403
(0.055)
P TPC8303(0.035)
CP
TPC8401
(0.035)
CP
TPC8402
(0.035)
TPC8208(0.05)
TPCS8209(0.03)
N#
TPCS8205
(0.045)
N#
TPCS8210
(0.03)
P# TPC8305(0.03)
P TPCS8302
(0.035)
TPC8203(0.021)
50 60 100 150 180 200 250 400 450 500 600 700 800 900 1000
2SK2615(0.3)
2SK2961(0.3)
2SK3658(0.3)
2SJ315(0.25)
2SJ377(0.19)
2SJ378(0.19)
2SJ438(0.19)
2SK2229(0.16)
2SK2231(0.16)
2SK2741(0.16)
2SK3543(2.45)
2SK2201(0.35)
2SK2200(0.35)
2SK2742(0.35)
2SJ338(5.0)
2SK2162(5.0)
2SJ313(5.0)
2SK2013(5.0)
TPC8207(0.02)
TPCS8211(0.024)
TPCS8204(0.017)
TPCS8102(0.02)
P# TPCS8102
(0.02)
2SJ567(2.0)
N#
TPCS8212
(0.024)
P# TPC6101(0.06)
N
TPC6001(0.03)
12
P
TPC6103(0.035)
P
TPC6104(0.04)
N TPC6002(0.03)
N
TPC8006-H(0.027)
N TPC6003(0.024)
N TPC6201(0.095)
CNTPCP8402(0.077)
P TPC6102(0.06)
N#
TPCS8208
(0.017)
2SJ610(2.55)
TPCS8004-H(0.8)
TPC8012-H(0.4)
1
1.3
1.5
1.8
2
2.5
2.3
2.7
3
3.5
3.4
3.2
4.5
5
5.5
6.5
7
7.5
8
8.5
9
6
4
4.2
0.5
V
DSS
(V)
I
D
(A)
1
1.3
1.5
1.8
2
2.5
2.7
2.3
3
3.5
3.4
3.2
4.5
5
5.5
6.5
7
7.5
8
8.5
9
6
4
4.2
0.5
2SK3302(18)
2SK2998(20)
2SK3471(18)
2SK2845(9)
2SK2733(9.0)
2SK3301(20)
2SK2718(6.4)
2SK2700(4.3)
2SK2608(4.3)
2SK2719(4.3)
2SK3762(6.4)
2SK3763(4.3)
2SK3760(2.2)
2SK3758(1.5)
2SK3761(1.25)
2SK3759(0.85)
2SK2883(3.6)
2SK2603(3.6)
2SK3371(9)
2SK2836(9)
2SK3374(4.6)
2SK3472(4.6)
2SK3498(5.5)
2SK2992(3.5)
2SK2963(0.7)
2SJ508(1.9)
2SK2962(0.7)
2SJ509(1.9)
2SK3670(1.7)
2SJ360(0.73)
2SJ507(0.7)
2SK2989(0.15)
2SJ668(0.17) 2SK2399(0.23)
2SK2400(0.23)
2SK3205(0.52) 2SJ407(1.0)
2SK2381(0.8)
2SK2835(0.8)
2SK2920(0.8)
2SJ537(0.19)
2SK3462(1.7)
2SK3342(1.0)
2SK2599(3.2)
2SK3373(3.2)
2SK2862(3.2)
2SK2846(5.0)
2SK3067(5.0)
2SK2865(5.0)
2SK2750(2.2)
2SK3085(2.2)
2SJ512(1.25)
2SJ516(0.8)
2SK2417(0.5)
2SK2662(1.5)
2SK2661(1.5)
2SK2991(1.5)
2SK3466(1.5)
2SK2274(1.7)
2SK1930(3.8)
2SK1119(3.8)
P
TPC8302(0.12)
CP
TPCP8402(0.072)
CP
TPCF8402(0.077)
PS
TPCF8B01(0.11)
P
#
TPC6105
(0.11)
PD
TPC8401(0.038)
PD
TPCP8J01(0.035)(-32V)
N TPC8211
(0.036)
P#
TPC8303
(0.021)
CN TPC8401(0.021)
CN TPC8403(0.033)
NS
TPC8A01(0.018)
N TPC8210(0.015)
N TPC8206(0.05)
N TPC8206(0.05)
P
TPC8105-H(0.04)
N
TPC8001(0.02)
P
TPC8110(0.025)
P TPCS8101(0.025)
NSTPC8A01(0.025)
CN TPC8402(0.05)
TPC8004(0.05)
2SJ525(0.12)
2SK2679(1.2)
2SK2838(1.2)
2SK2604(2.2)
2SK2605(2.2)
2SK2884(2.2)
2SK2610(2.5)
2SK2717(2.5)
2SK1359(3.8)
2SK3565(2.5)
2SK2542(0.85)
2SK2543(0.85)
2SK2776(0.85)
2SK3538(0.85)
2SK3626(0.85)
2SK2952(0.55)
2SK2350(0.4)
2SK2914(0.5)
2SK2917(0.5)
2SK2544(1.25)
2SK2545(1.25)
2SK2602(1.25)
2SK2777(1.25)
2SK2746(1.7)
2SK3633(1.7)
2SK2749(2.0)
2SK3700(2.5)
2SK1120(1.8)
2SK2613(1.7)
2SK1365(1.8)
2SK2847(1.4)
2SK3017(1.25)
2SK2606(1.2)
2SK2611(1.4)
2SK2607(1.2)
2SK2467(0.83)
2SJ440(0.83)
P
#
TPCF8302(0.059)
P
TPCF8303(0.058)
CN
TPCF8402(0.05)
P
TPCF8103(0.11)
P TPCF8101(0.028)
P
TPCF8102
(0.030)
P TPCF8104
(0.028)
N TPCF8001
(0.023)
P
TPC8301(0.12)
2SK3130(1.55)
2SK3316(1.8)
2SK3417(1.8)
N# TPC6005(0.028)
2SK3627(1.5)
2SK3563(1.5)
2SK3562(1.25)
2SK3667(1.0)
2SK3561(0.85)
2SK3564(4.3)
2SK3567(2.2)
2SK3566(4.3)
2SK3798(3.5)
2SK3757(2.45)
2SK3767(5.0)
NTPCP8201(0.05)
POWER-MINI SP TO-92MOD POWER-MOLD DP
TO-220AB
TO-220(NIS)
TO-220FL/SM
Package
code
New product
series code
TO-3P(SM)TSSOP-8
SOP-8 Lead clamp
TFP Slim-TFP
SOP-8
TO-3P(N)ISTO-3P(N) TO-3P(L)
TPS
VS-8 VS-6
PS-8
: π-MOSIII
: π-MOSV
: π-MOSVI
: L2-π-MOSV
P = P-ch
CN = Complementary N-ch
CP = Complementary P-ch
NS = N-ch + SBD
PS = P-ch + SBD
[ ] = Under development
PD = P-ch + Driver
(load switch)
Notes:
( ) = R
DS(ON)
max
$ = 10-V drive
# = 2.5-V drive
= 1.8-V drive
= High-speed diode
N = N-ch
: L2-π-MOSVI
: U-MOS
: π-MOSVII
: π-MOSIV
TO-220SIS SOP Advance
Selection Guide
98
3020 50 60 100 150 180 200 250 300 450400 500 600 700 900 1000
27
30
32
35
36
40
45
55
60
70
75
50
25
20
16
18
14
15
13
12
11
V
DSS
(V)
I
D
(A)
27
30
32
35
36
40
45
55
60
70
75
50
25
V
DSS
(V)
I
D
(A)
15
20
16
18
14
13
12
11
2SJ380(0.21)
2SK2382(0.18)
2SK2401(0.18)
2SJ201(0.625)
2SK1530(0.625)
2SK2967(0.068)
2SK2995(0.068)
2SK2508(0.25)
2SK2598(0.25)
2SK2993(0.105)
2SK3388(0.105)
2SK3445(0.105)
2SK3544(0.4)
2SK3444(0.082)
2SK3176(0.052)
2SK3443(0.055)
2SK2882(0.12)
2SK3387(0.12)
2SK2789(0.085)
2SK2314(0.085)
2SK3084(0.046)
2SK2466(0.046)
2SK3442(0.020)
2SK1382(0.020)
2SK1381(0.032)
2SJ412(0.21)
2SJ619(0.21)
2SJ464(0.09)
2SK2391(0.085)
2SJ620(0.09)
2SK2507(0.046)
2SK3089(0.03)
2SK3090(0.02)
2SK3127(0.011)
$ 2SK3506(0.02) 2SK2886(0.02)
2SK2312(0.017)
2SK2985(0.0058)
2SK2232(0.046)
2SK2311(0.046)
2SJ334(0.038)
2SK3236(0.02)
2SK2385(0.03)
2SK3662(0.0125)
2SJ402(0.038)
2SK2844(0.022)
2SK3125(0.007)
2SK3128(0.011)
2SK3397(0.006)
$ 2SK3389(0.005)
2SK3439(0.005)
$ 2SK2551(0.011)
2SK2745(0.0095)
2SK3129(0.007)
$ 2SK2550(0.03)
$ 2SK2744(0.02)
2SK2233(0.03)
2SK2266(0.03)
2SK2376(0.017)
$ 2SK2398(0.03)
$ 2SK3440(0.008)
$ 2SK2445(0.018)2
2SK2173(0.017)
2SK3441(0.0058)
2SK2987(0.0058)
2SK2313(0.011)
2SK2267(0.011)
2SK2986(0.0058)
$ 2SK3051(0.03)
N[ TPC8015-H(0.008)]
P TPC8107(0.007)
P TPC8114(0.0045)
N TPC8003(0.007)
N TPC8009-H(0.01)
P TPC8112(0.006)
N TPC8013-H(0.0065)
N TPC8016-H(0.0055)
N TPC8017-H(0.0066)
N TPC8018-H(0.0046)
2SJ304(0.12)
2SJ312(0.12)
2SJ349(0.045)
2SJ401(0.045)
2SK2782(0.055)
2SK2614(0.046)
2SK1486(0.095)
2SK1544(0.2)
2SK3132(0.09)
2SK3403(0.4)
2SK2916(0.4)
2SK2917(0.27)
2SK3117(0.27)
2SK2842(0.52)
2SK3068(0.52)
2SK3743(0.4)
2SK3398(0.52)
2SK2698(0.4)2
2SK2837(0.27)
2SK2953(0.4)
2SK2699(0.65)
2SK2915(0.4)
2SK1489(1.0)
2SK3131(0.11)
2SK3314(0.48)
2SK3313(0.62)
2SK3625(0.082)
2SK3625(0.082)
N TPCA8003-H(0.0066)
N TPCA8004-H(0.0046)
P TPCA8101-H(0.007)
P TPCA8102-H(0.006)
P TPCA8103(0.0042)
2SK3568(0.52)
2SK2965(0.26)
N
TPC8014(0.014)
P
TPC8108(0.013)
N
TPC8010-H(0.016)
P
TPC8113(0.01)
2SK3669(0.125)
2SK2839(0.04)
2SK2843(0.75)
2SK2866(0.75)
2SK2889(0.75)
2SK2996(1)
2SK3438(1.0)
2SK3437(1.0)
2SK3399(0.75)
2SK3265(1.0)
P TPC8109(0.02)
P TPC8115(0.01)
2SK3453(1.0)
2SK2841(0.55)
2SK2949(0.55)
2SK3499(0.55)
2SJ200(0.83)
2SJ440(0.83)
2SK1529(0.83)
2SK3497(0.15)
2SJ618(0.37)
2SK3126(0.65)
2SK3309(0.65)
2SK3310(0.65)
2SK3407(0.65)
2SK2968(1.25)
2SK2601(1.0)
2SK3569(0.75)
10 10
POWER-MINI
SP TO-92MOD POWER-MOLD DP
TO-220AB
TO-220(NIS)
TO-220FL/SM
Package
code
New product
series code
TO-3P(SM)TSSOP-8
SOP-8 Lead clamp
TFP Slim-TFP
SOP-8
TO-3P(N)ISTO-3P(N) TO-3P(L)
TPS
VS-8 VS-6
PS-8
: π-MOSIII
: π-MOSV
: π-MOSVI
: L2-π-MOSV
P = P-ch
CN = Complementary N-ch
CP = Complementary P-ch
NS = N-ch + SBD
PS = P-ch + SBD
[ ] = Under development
PD = P-ch + Driver
(load switch)
Notes:
( ) = R
DS(ON)
max
$ = 10-V drive
# = 2.5-V drive
= 1.8-V drive
= High-speed diode
N = N-ch
: L2-π-MOSVI
: U-MOS
: π-MOSVII
: π-MOSIV
TO-220SIS SOP Advance
Power MOSFET Characteristics
10
200
150
100
50
01999 2002 2003
High-speed U-MOS
II
High-speed U-MOS
III
Ultra High-speed U-MOS
III
Improved characteristics
by using Al straps
R
DS(ON)
• Q
SW
(m • nC)
Circuit example for DC-DC Converter
Synchronous rectifier (low side)
High-speed, trench and N-channel MOSFET
(N-channel high-speed or ultra high-speed U-MOS
III
Series)
MOSBD
IN OUT
1.Features of SOP Series
Improved trade-off between On-resistance and gate switch charge due to short-channel structure, trench contact
structure and Al straps.
Power management
Low On-resistance, trench and P-channel MOSFET
(low On-resistance U-MOS
IV
Series)
Switching (high side)
High-speed, trench and N-channel MOSFET
(N-channel high-speed or ultra high-speed U-MOS
III
Series)
Al straps
Source Gate
Drain
RDS(ON) reduction
Reduction of package inductance
Chip development
SOP-8 SOP AdvanceStrap structure
Package development
High-speed U-MOS
II
High-speed U-MOS
III
Ultra high-speed U-MOS
III
MOSBD (MOSFET with SBD)
Development Process of High-Speed U-MOS Series
11
TPC8020-H 9.5 6.9
TPC8017-H 7.3 7.8
TPC8018-H 5.0 12.0
TPC8009-H 11.0 9.1
TPC8013-H 6.6 15.6
R
DS(ON)
(m)
@V
GS
= 4.5 V
Q
SW
(nC)
@V
DS
= 24 V
V
IN
C
IN
Control IC
Q
1
Q
2
L
1
V
OUT
/ I
OUT
R
L
C
1
SBD
[Test conditions]
f = 300 kHz
V
IN
= 17.6 V
V
OUT
= 1.6 V
43% RDS(ON) X Qsw reduction
(compared to high-speed U-MOS
III
)
Characteristics
Low gate switch charge: 14% reduction compared
to high-speed U-MOS
III
Low On-resistance (Al straps): 34% reduction
compared to high-speed U-MOS
III
Housed in SOP Advance, high current, thin
and excellent heat dissipated package
Ultra High-Speed U-MOS
III
Series
Ultra High-Speed
U-MOS
III
High-Speed
U-MOS
III
@R
DS(ON)
: V
GS
= 4.5 V typ.
Qsw: V
DS
= 24 V typ.
Cgd/Cgs: V
DS
= 10 V typ.
Electrical Characteristics Comparison
NEW
Performance Index:
improved 43%
Control shoot-
through current
DC-DC Converter Efficiency Comparison
Ultra High-Speed U-MOS
III
vs. Conventional Products
Comparison when ultra high-speed MOS
III
Used in Combination
High-Speed U-MOS
III
Ultra High-Speed U-MOS
III
TPC8009-H TPC8017-H
R
DS(ON)
(m)11
7.3
Qsw(nC) 9.1
7.8
Cgd(pF) 250
175
Cgs(pF) 1210
1290
R
DS(ON)
XQsw(mnC)
100.1
56.9
Capacitance ratio (Cgd / Cgs)
20.7%
13.6%
0
@ f = 300 kHz, V
in
= 17.6 V, V
out
= 1.6 V
@ f = 300 kHz, Vin = 17.6 V, Vout = 1.6 V
92%
90%
78%
Efficiency (%)Efficiency (%)
80%
82%
84%
86%
88%
246
Output Current Iout (A)
Output Current Iout (A)
8 10121416
Efficiency
improved
Solid line: Ultra High-Speed U-MOS
III
Dotted line: High-Speed U-MOS
III
(conventional products)
TPC8020-H+TPC8020-H
TPC8009-H+TPC8009-H
TPC8009-H+TPC8013-H
TPC8020-H+TPC8018-H
81%
82%
83%
84%
85%
86%
87%
88%
89%
90%
91%
0246810121416
Solid line: the best combination
1. Low current(Iout 10 A)
TPC8020-H + TPC8020-H
2. High current(Iout >10 A)
TPC8020-H + TPC8018-H
TPC8020-H+TPC8020-H
TPC8017-H+TPC8018-H
TPC8020-H+TPC8017-H
TPC8017-H+TPC8017-H
TPC8020-H+TPC8018-H
Power MOSFET Characteristics
12
MOSBD (MOSFET with SBD)
Product Line-up
NEW
High side
Low side
Q1
++
Q2 SBD
Conventional Circuit
High side (Q1)
Low side (Q2)
MOSBD Built-in SBD
SOP-8 SOP-8
SFLAT
SOP-8
Characteristics
Applications
Compact size
Integrated three devices ( two MOSFETs and one SBD) into a single package
High-performance device
High side: high-speed MOSFET (high-speed U-MOS
III
)
Low side: MOSBD (U-MOS
III
MOSFET with a SBD)
Portable devices: DC-DC converters for notebook PCs
V
DSS
(V) ID(A)
R
DS
(ON) ma x (m)
Ciss typ.
(pF)
Qg typ.
(nC)
10V 4.5V
TPC8A01
30 6 25 30 17 940 High-speed
U-MOS
III
N-ch/
N-ch+SBD
30 8.5/1 18 21 49 2295 U-MOS
III
Remark
Part Number Maximum ratings Circuit
Configuration
13
SOP Advance
Product Line-up
Portable devices: DC-DC converters for notebook PCs
Applications
NEW
1,2,3: Source
4: Gate
5,6,7,8: Drain
1.27
14
85
0.05 M A
0.05 S
0.4 ± 0.1
0.15 ± 0.05
5.0 ± 0.2
0.595
0.5 ± 0.1
6.0 ± 0.3
0.95 ± 0.05
0.166 ± 0.05
1.1 ± 0.23.5 ± 0.2
5.0 ± 0.2
85
14
0.8 ± 0.1
4.25 ± 0.2
0.6 ± 0.1
S
A
Note 1: When mounted on a glass epoxy board (25.4 mm X25.4 mm x1.6 mm) Note 2: without chip resistance
SOP-8 SOP Advance Features of SOP Advance
PCB area (mm
2
)30
30
The same PCB area as SOP-8
Total height (max) (mm) 1.9
1.0
Low profile, t = 0.9 mm
rth(ch-a) (t = 10s)
(Note 1)
(°C / W) 65.8
44.6
High-power dissipation
rth(ch-c) (°C / W)
2.78
Current rating (A) 18
40
High-current guarantee
Package resistance
(Note 2)
(m) 1.6
0.5
Al straps
Characteristics
Mounting area is identical with that of SOP-8.
On-resistance reduction and thin package (1.0 mm max)
employing flat leads and Al straps
Achieved high current and high power dissipation by attaching an
exposed heat sink on the bottom of the package
(ID(DC) = 40 A, PD = 45 W)
V
DSS
(V) I
D
(A) 10V 4.5V 4.0V Ultra high-speed
U-MOS
III
Ultra high-speed
U-MOS
III
Ultra high-speed
U-MOS
III
TPCA8005-H
TPCA8003-H
TPCA8004-H
TPCA8102
TPCA8103
30 27 91324 1395
30 35 6.6 9.5 25 1465
30 40 4.6 6.2 37 2265
30 40 6 14 109 4600 U-MOS
III
30 40 4.2 6.8 184 7880 U-MOS
IV
N-ch
Single
P-ch
Single
Part Number Maximum Ratings Circuit
Configu-
ration
R
DS
(ON) max(m)Q
g typ.
(nC) C
iss
typ.
(pF) Remark
: Under development
Power MOSFET Characteristics
14
SOP-8 Series Line-up .... [Part Number: TPC8xxx]
Features
Low On-resistance and high-speed switching series are lined up.
Low On-resistance Series: U-MOS
III
/
IV
High-speed switching series: high-speed U-MOS
III
, ultra high-speed U-MOS
III
On-resistance reduction employing Al straps
Product Line-up
10V 4.5V 4V 2.5V
TPC8004
30 5 50 80 16 475
TPC8001
30 7 20 30 40 1250
TPC8006-H
30 7 27 40 16 790
23 1395 High-speed
U-MOS
II
TPC8020-H ✽★
30 13 9 13 ——
Ultra high-speed
U-MOS
III
High-speed U-MOS
III
High-speed U-MOS
III
TPC8014
30 11 14 22 —— 39 1860 U-MOS
III
TPC8010-H
30 11 16 25 —— 18 1020
TPC8003
30 13 7 13 90 4380 U-MOS
II
TPC8015-H
30 13 8 12 —— 29 1460
TPC8017-H
30 15 6.6 9.5 —— 25 1465
Ultra high-speed
U-MOS
III
Ultra high-speed
U-MOS
III
High-speed U-MOS
III
TPC8016-H
30 15 5.7 7.5 —— 46 2380
TPC8018-H
30 18 4.6 6.2 —— 38 2265
TPC8012-H
200 1.8 400 ——— 11 440
TPC8208
20 5 ——50 70 9.5 780 U-MOS
III
TPC8207
20 6 ——20 30 22 2010 U-MOS
III
TPC8209
30 5 40 60 15 600 U-MOS
II
TPC8211
30 5.5 36 44 —— 25 1250 U-MOS
III
TPC8203
30 6 21 32 40 1700 U-MOS
II
TPC8210
30 8 15 20 —— 75 3530 U-MOS
III
TPC8206
60 5 50 75 17 800 U-MOS
II
N-ch
Single
N-ch
Dual
Remark
Part Number Maximum Ratings
Circuit
Configuration
TPC8104-H
30 565120 17 730 High-speed U-MOS
II
TPC8105-H
30 74060 32 1440 High-speed U-MOS
II
TPC8109
30 10 20 30 45 2260 U-MOS
III
TPC8108
30 11 13 23 77 3510 U-MOS
III
TPC8111
30 11 12 18 107 5710 U-MOS
IV
TPC8113
30 11 10 18 107 4500 U-MOS
IV
TPC8107
30 13 7 15 130 5880 U-MOS
III
TPC8112
30 13 6 14 130 5880 U-MOS
III
TPC8114
30 18 4.5 6.8 180 7480 U-MOS
IV
TPC8115
20 10 10 14 115 9130 U-MOS
IV
TPC8110
40 82535 48 2180 U-MOS