AO This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device rugged- ness and reliability. This design has been optimized to give superior performance Re WMOS [FIST FIELD EFFECT POWER TRANSISTOR IRF240,241 D86EN2,M2 18 AMPERES 200, 150 VOLTS RDS(ON) = 9.18 0 in most switching applications including: switching power 5 supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors. Features Polysilicon gate Improved stability and reliability No secondary breakdown Excellent ruggedness Ultra-fast switching Independent of temperature e Voltage controlled High transconductance Low input capacitance Reduced drive requirement Excellent thermal stability Ease of paralleling 065(1.65) MAX + 0.06311.60) pia 0.057(1.45) CASE TEMP. REFERENCE POINT 20(5.00) SOURCE DRAIN 0.162(4.09) ya, 0.15(3.84) 2 HOLES N-CHANNEL 0,845(21.47) CASE STYLE TO-204AE (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) MAX [- 358(9.09) MAX ke DIA -| ~~ tt [- SEATING PLANE ~| je L 426(10.82) MIN 1 050(26.68) MAX."""") 0.675(17.15) 0.650(16.51) 0.205(5.21) 0.440(11.18) 0.420(10.67) 1.197(30.40) 1.177(29.90) _ 1.573(39 96) 4 MAX Pe | _ 0.225(5.72) DRAIN (CASE) maximum ratings (Tc = 25C) (unless otherwise specified) RATING SYMBOL IRF240/D86EN2 iRF241/D86EM2 UNITS Drain-Source Voltage Voss 200 150 Volts Drain-Gate Voltage, Res = 1M0. VDGR 200 150 Volts Continuous Drain Current @ Tg = 25C Ip 18 18 A @ To = 100C 11 11 A Pulsed Drain Current IDM 72 72 A Gate-Source Voltage Vas +20 +20 Volts Total Power Dissipation @ Tc = 25C Pp 125 125 Watts Derate Above 25C 1.0 1.0 Ww/C. Operating and Storage Junction Temperature Range Ty, TsTG ~55 to 150 -55 to 150 C thermal characteristics Thermal Resistance, Junction to Case Rgsc 1.00 1.00 C/W Thermal Resistance, Junction to Ambient Rasa 30 30 C/W Maximum Lead Temperature for Soldering Purposes: % from Case for 5 Seconds Th 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 141electrical characteristics (Tc = 25C) (unless otherwise specified) { CHARACTERISTIC | SYMBOL | MIN | TYP | MAX | UNIT off characteristics Drain-Source Breakdown Voltage IRF240/D86EN2 BVpss 200 _ Volts (Vas = OV, Ip = 250 wA) IRF241/D86EM2 | . 150 _ _ Zero Gate Voltage Drain Current Ipss (Vos = Max Rating, Vag = OV, To = 25C) _ _ 250 LA (Vps = Max Rating, 0.8, Vag = OV, To = 125C) _ _ 1000 Oran Ov Current loss _ _ +100 nA on characteristics Gate Threshold Voltage To = 25C | VasctH) 2.0 _ 4.0 Volts (Vos = Vas; Ip = 250 uA) On-State Drain Current _ _ (Vag = 10V, Vos = 10V) ID(ON) 18 A Static Drain-Source On-State Resistance (Vag = 10V, Ip = 10A) Rps(oONn) _ 0.14 0.18 Ohms Forward Transconductance (Vpg = 10V, Ip = 10A) Ofs 4.8 6.0 _ mhos dynamic characteristics input Capacitance Vas = OV Ciss 1400 1600 pF Output Capacitance Vps = 25V Coss _ 310 750 pF Reverse Transfer Capacitance f= 1 MHz Crss _ 65 300 pF switching characteristics Turn-on Delay Time Vps = 90V ta(on) _ 20 _ ns Rise Time Ip = 10A, Vag = 15V ty 40 ns Turn-off Delay Time RGeEnN = 509, Reg = 12.50 | tayoff) _ 60 _ ns Fall Time (Ras (Equiv.) = 109) tt _ 30 _ ns source-drain diode ratings and characteristics* Continuous Source Current Is _ _ 18 A Pulsed Source Current Ism _ 72 A Diode Forward Voltage Vsp _ 1.0 20 Volts (To = 25C, Veg = OV, Ig = 18A) Reverse Recovery Time ter _ 330 ns (Is = 18A, dis/dt = 100A/usec, To = 125C) Qrr 3.5 uc *Pulse Test: Pulse width < 300 ys, duty cycle S 2% 1000 800 600 400 200 80 60 40 20 ip. DRAIN CURRENT (AMPERES) RATION iN AREA Y BE LIMITED 8Y R bOMo | | SINGLE PULSE Ton 28C 2 4 6 810 20 40 60 80100 Vpg. ORAIN SOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA 200 400 600 1000 142 2.4 CONDITIONS: Rpg(on) CONDITIONS: ip = 10 A, Vag = 10V V@s(tH) CONDITIONS: Ip = 28044, Vg = Vag 2.2 Rosion) 2.0 18 1.6 Vesity) Rosion) AND Vegeruy) NORMALIZED 0 40 80 12C Ty, JUNCTION TEMPERATURE (C) TYPICAL NORMALIZED Rogioy;, AND Vas;1n) VS. TEMP. 40 160