Am2102 /Am2102-1/Am2102- 1024-Bit Static N-Channel RAM | Distinctive Characteristics Operates from single 5 V_ power supply @ Three speed selections: tyusec, 650ns, 500ns | @ All inputs and outputs directly TTL compatible @ No clocks required @ 100% reliability testing in accordance with MIL-STD-883 The Am2102 is a static N-channel 1024-bit random access memory. The device operates from a single +5 volt power supply and all inputs and outputs are directly TTL com- patible with no external components required. The memory is addressed for reading or writing one bit by applying a binary code to the 10 address inputs AgAg. Writing is accomplished by lowering the write enable (WE) and the chip select (CE); the data on the data input (Dj,) will be stored in the addressed location. If the chip select is low- ered while write enable is HIGH, then the data stored in the addressed location will be read out on the data output (Dour). Any time the chip select is HIGH, the entire chip is dis- abled. Data cannot be written into the memory and the FUNCTIONAL DESCRIPTION output will go to a high impedance OFF state. When chip select is LOW, the output will drive at least one TTL load in both the HIGH and LOW states. During the write opera- tion, the data output follows the data input. The chip select function and the(fhree-state outpuD ake the construction of a large array using Am2102 chips very easy. Am2102 inputs and outputs can be tied together and chips selected by a standard TTL decoder such as the Am9321 or Am9301. The Am2102 is available in three different cycle time selections. The Am21Q2 operates with a lusec minimum read or write cycle, the Am2102-1 requires a 500ns min- imum read or write cycle, and the Am2102-2 requires a 650ns minimum read or write cycie. LOGIC SYMBOL AZ Ay mM As As a? Ly Ms ce Voc = Pin 10 GND = Pin? BLOCK DIAGRAM x Ay 3 a2 = a3 z 3 NM 2 at we o Dine Ay Me Ar Ag As Am2102 ORDERING INFORMATION Ambient Tysec 500ns 650ns Package Temperature Order Order Order Type Range Number Number Number Molded DIP.) -OC to +70C_)-- P2102 P2102-1 P2102-2 Hermetic DIP OC to +70C ~C2102 C2102-1 C2102-2 CONNECTION DiAGRAM Top View Ar Me AS CE our Din tec 38D Note Pin 11s marked tor onentationMAXIMUM kh. ; iNGS (Above which the useful life may be impaired) Storage Temperature 66C to +150C Temperature (Ambient) Under Bias 0C to +70C Supply Voltage to Ground Potential (Pin 10 to Pin 9) Continuous -0.5V to +7V OC Voltage Applied to Outputs -0.5V to +7V OC input Voltage O.5V to +7V OPERATING RANGE Pert Number Vee Ambient Temperature am2102, AM2102-1, AM2102-2 6.0V 25% OC 10 +70C ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE (Untess Otherwise Noted) Py Description Test Conditions Min. Typ.iNove 1) Max. Units Vou Output HIGH Voltage Voc = MIN., lon -100uA 2.2 Volts Voi Output LOW Voltage Voc * MIN, Io, = 1.9mA 0.45 Volts Guaranteed input logical HIGH Vin input HIGH Level voltage for all inputs 2.2 Voc Volts Guaranteed input logical LOW Vin Input LOW Levet voltage for atl inputs 05 0.65 Votts tu Input Loed Current Vec * MAX.. Vin = OV to 5.25 V 10 uA t All inputs = Voc - cel Power Supply Current Dete out open Ta = 25C Sad 6 mA loe2 Veo = MAX. Tas OC to +70C 30 70 Vout = 4.0V 10 . Cu . lio Output Leskage Current VE" 2.2V Vout = 046V =100 nA Nowe 1. Typicst limits are at Voc 8.0V and Ta = 28C CAPACITANCE (Ta = 25C} Parameters Description Test Conditions Min. Typ. Max. Units { cin [input Capacitance, Any input | Vin OV, f= TMHz | | 3 s | oF [Sour ]_ Output Capacitance [Your = OV, f= 1MHz T I 10 | OF | Am2102 SWITCHING CHARACTERISTICS AND OPERATING REQUIREMENTS (Ta = 0C to 70C, Vcc = 5V 25%) Load = 1 TTL Gate and 100 pF, Vj, = 0.68, Ving 22V, t= t= 20n8 Typ. (Note 1) Paramaters Description Test Conditions Reed Cycle Time Access Time LOW to Output Previous Read Deta Valid with to Address Previous Reed Data Valid with to Select Write Cycle Time Write Width Max. 1000 Units no ns 500 na ne Ria gs Rl alzl2_4m2102-1 SWITCHING CHARACTERISTICS AND OPERATING REQUIREMENTS (Ta =0C to 70 C= 5Vt5%) Load = 1 TTL Gate end 100 pF, Vi_ = 0.65V, Vip * 2.2V, tr = tf = 20s Typ. Parameters Description Test Conditions Min. (Note 1} Max. tac Resd Cycle Time 500 | ta Access Time __ ! tco CE LOW to Output - : tom | UiRter we arn - ton2 Previous Read Oats Valid with Respect to Chip Select two Write Cycie Time taw Address Set-Up Time twe Write Pulse Width twA Write Recovery Time tow Data Set-Up Time 1DH Data Hold Time tow Chip Enable Hold Time Am2102-2 SWITCHING CHARACTERISTICS AND OPERATING REQUIREMENTS (Ta = 0C to 70C, Vcc = 5V25%) Load 1 TTL Gate and 100 pF, Vj, + 0.65V, Vin = 2.2V, te * te > 208 Typ. Parameters Description Test Conditions Min woe n Max Units tac Read Cycle Time tA Access Time tco CE LOW to Output tout Previous Reed Data Valid with Respect to Address wove | Sonne twe Write Cycle Time taw Address Set-Up Time twe Write Pulse Width WR Write Recovery Time - tow Data Set-Up Time - ton Data Hold Time ~ tow Chip Enable Hold Time ~ 550 SWITCHING WAVEFORMS READ CYCLE al eo ADORESS Y 15v | one : ENABLE K'* ' Se ee -_ ah ee meee ton? OUTPUT chase vev f {age ee wr WRITE Sy ENABLE ' tow rere lon on iw para stan xX 5-196-2 DEFINITIC TERMS FUNCTIONAL TERMS CE Active LOW chip enabie, Data can be read from or written into the memory only if CE is LOW. WE Active LOW write enable. Data is written into the memory if WE is LOW and read from the memory if WE is HIGH. Static RAM) =A random access memory in which data is stored in bistable latch circuits, A static memory will store data as long as power is supptied to the chip without requiring any special Clocking or refreshing operations. N-Channel An insulated gate field effect transistor technology in which the transistor source and drains are made of N-type material, and electrons serve as the carriers between the two regions. N-Channet transistors exhibit lower thresholds and faster switching speeds than P-Channel transistors. SWITCHING TERMS tac Read Cycle Time. The minimum time required between successive address changes while reading. ta Access Time. The time delay between application of an address and stable data on the output when the chip is enabled. tog Access Time from Chip Enabie. The minimum time during which the chip enable must be LOW prior to reading data on the output. tOH1 Minimum Access Time. Minimum time which will elapse between change of address and any change on the data output. tou2 Minimum time which will elapse between a change on the chip enable and any change on the data output. two Write Cycle Time. The minimum time required between successive address changes while writing. taw Address Set-Up Time. The minimum time prior to the falling edge of the write enable during which the address inputs must be correct and stable, twp The minimum duration of a LOW tevel on the write enable guaranteed to write data. twa Address Hold Time. The minimum time after the rising edge of the write enable during which the address must remain steady. tow Data Set-Up Time. The minimum time that the data input must be steady prior to the rising edge of the write enabie. ton Oata Hold Time. The minimum time that the data input must remain steady after the rising edge of the write enable. teow Chip Enable Time During Write, The minimum duration of a LOW level on the Chip Select while the write enable is LOW to quarantes writing. PHYSICAL DIMENSIONS Duel-in-Line 16-Pin Side Brazed 16-Pin Molded oy) TY Ths . 2 # . ji +k 8 + 2 (SS a _ I, 4+ = pr at + s a MVitl Te Pe aed} thw +g +B re ae tt Om ve Yee 0 oe OE SIZE 0.126" x 0.164 ADVANCED MICRO DEVICES INC. 901 Thompson Place Sunnyvale California 94006 (408) 732-2400 TWX: 910-339-9200 TELEX: 34-8306 Achenced Micro Devices can not sesume reaponsibitity for use of sey corcurtry described other then cacuitry entirely embodied in an Advenced Mecro Denice product. eMPreliminary Information AMD