LM2576TV012G - ON SEMICONDUCTOR

September, 2014 − Rev. 3 1Publication Order Number:

NVMFD5873NL/D

NVMFD5873NL

Power MOSFET

60 V, 13 mW, 58 A, Dual N−Channel Logic

Level, Dual SO−8FL

Features

•Small Footprint (5x6 mm) for Compact Designs

•Low RDS(on) to Minimize Conduction Losses

•Low Capacitance to Minimize Driver Losses

•NVMFD5873NLWF − Wettable Flanks Option for Enhanced Optical

Inspection

•AEC−Q101 Qualified and PPAP Capable

•This is a Pb−Free Device

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter Symbol Value Unit

Drain−to−Source Voltage VDSS 60 V

Gate−to−Source Voltage VGS "20 V

Continuous Drain Cur

rent RYJ−mb (Notes 1,

2, 3, 4) Steady

State

Tmb = 25°CID58 A

Tmb = 100°C 41

Power Dissipation

RYJ−mb (Notes 1, 2, 3

)

Tmb = 25°CPD107 W

Tmb = 100°C 54

Continuous Drain Cur

rent RqJA (Notes 1, 3

& 4) Steady

State

TA = 25°CID10 A

TA = 100°C 7.0

Power Dissipation

RqJA (Notes 1 & 3) TA = 25°CPD3.1 W

TA = 100°C 1.6

Pulsed Drain Current TA = 25°C, tp = 10 msIDM 190 A

Operating Junction and Storage Temperature TJ, Tstg −55 to

175 °C

Source Current (Body Diode) IS58 A

Single Pulse Drain−to−Source Avalanche

Energy (TJ = 25°C, VGS = 10 V, IL(pk) = 28.3 A,

L = 0.1 mH, RG = 25 W)

EAS 40 mJ

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s) TL260 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be af fected.

THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)

Parameter Symbol Value Unit

Junction−to−Mounting Board (top) − Steady

State (Notes 2, 3) RYJ−mb 1.4

°C/W

Junction−to−Ambient − Steady State (Note 3) RqJA 48

1. The e ntire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Psi (Y) is used as required per JESD51−12 for packages in which

substantially less than 100% of the heat flows to single case surface.

3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.

4. Maximum current for pulses as long as 1 second are higher but are dependent

on pulse duration and duty cycle.

ORDERING INFORMATION

http://onsemi.com

Device Package Shipping†

V(BR)DSS RDS(on) MAX ID MAX

60 V 13 mW @ 10 V 58 A

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

DFN8 5x6

(SO8FL)

CASE 506BT

MARKING DIAGRAM

16.5 mW @ 4.5 V

NVMFD5873NLT1G DFN8

(Pb−Free) 1500 / Tape &

Reel

5873NL = Specific Device Code

for NVMFD5873NL

5873LW = Specific Device Code

for NVMFD5873NLWF

A = Assembly Location

Y = Year

W = Work Week

ZZ = Lot Traceability

Dual N−Channel

5873xx

AYWZZ

NVMFD5873NLWFT1G DFN8

(Pb−Free) 1500 / Tape &

Reel

NVMFD5873NL

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA60 V

Drain−to−Source Breakdown Voltage

Temperature Coefficient V(BR)DSS/TJ54.9 mV/°C

Zero Gate Voltage Drain Current IDSS VGS = 0 V,

VDS = 60 V TJ = 25°C 1.0 mA

TJ = 125°C 100

Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA1.5 2.5 V

Threshold Temperature Coefficient VGS(TH)/TJ−5.8 mV/°C

Drain−to−Source On Resistance RDS(on) VGS = 10 V, ID = 15 A 10.7 13 mW

VGS = 4.5 V, ID = 10 A 13.6 16.5

Forward Transconductance gFS VDS = 5.0 V, ID = 15 A 15 S

CHARGES AND CAPACITANCES

Input Capacitance Ciss

VGS = 0 V, f = 1.0 MHz, VDS = 25 V

1560 pF

Output Capacitance Coss 145

Reverse Transfer Capacitance Crss 98

Total Gate Charge QG(TOT)

VGS = 4.5 V, VDS = 48 V,

ID = 15 A

16.5 nC

Threshold Gate Charge QG(TH) 1.3

Gate−to−Source Charge QGS 4.0

Gate−to−Drain Charge QGD 8.8

Total Gate Charge QG(TOT) VGS = 10 V, VDS = 48V, ID = 15 A 30.5 nC

SWITCHING CHARACTERISTICS (Note 6)

T urn−On Delay Time td(on)

VGS = 4.5 V, VDS = 48 V,

ID = 15 A, RG = 2.5 W

10.8 ns

Rise Time tr51

T urn−Off Delay Time td(off) 21

Fall Time tf42.6

T urn−On Delay Time td(on)

VGS = 10 V, VDS = 48 V,

ID = 15 A, RG = 2.5 W

9.5 ns

Rise Time tr13

T urn−Off Delay Time td(off) 25

Fall Time tf6.6

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage VSD VGS = 0 V,

IS = 15 A TJ = 25°C 0.8 1.0 V

TJ = 125°C 0.7

Reverse Recovery Time tRR

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 15 A

22.4 ns

Charge Time ta14.5

Discharge Time tb9.0

Reverse Recovery Charge QRR 18 nC

5. Pulse Test: pulse width = 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

NVMFD5873NL

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TYPICAL CHARACTERISTICS

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 5. On−Resistance Variation with

Temperature Figure 6. Drain−to−Source Leakage Current

vs. Voltage

TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

RDS(on), DRAIN−TO−SOURCE

RESISTANCE (NORMALIZED)

3.4 V

VGS = 3.0 V

10 V VDS ≥ 10 V

TJ = 25°C

TJ = 125°CTJ = −55°C

ID = 15 A

TJ = 25°C

VGS = 4.5 V

TJ = 25°C

VGS = 10 V

ID = 15 A

VGS = 10 V VGS = 0 V

TJ = 150°C

TJ = 25°C

3.8 V

TJ = 125°C

4.5 V

IDDS, LEAKAGE (nA)

0.0 1.0 2.0 3.0 4.0 5.0 0

2.0 2.5 3.0 3.5 4.0 4.5

0.005

0.010

0.015

0.020

0.025

2345678910

0.0050

0.0075

0.0100

0.0125

0.0150

0.0175

0.0200

5 1015202530

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

−50 −25 0 25 50 75 100 125 150 175 100

1000

10000

100000

10 20 30 40 50 60

NVMFD5873NL

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TYPICAL CHARACTERISTICS

Qgs

Figure 7. Capacitance Variation Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current

RG, GATE RESISTANCE (W)VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

1001010.1

0.1

C, CAPACITANCE (pF)

VGS, GATE−TO−SOURCE VOLTAGE (V)

t, TIME (ns)

IS, SOURCE CURRENT (A)

ID, DRAIN CURRENT (A)

VGS = 0 V

TJ = 25°C

Ciss

Coss

Crss

VDS = 48 V

ID = 15 A

VGS = 10 V

td(on)

TJ = 25°C

VGS = 0 V

NVMFD5873NL

FBSOA

TA = 25°C, 650 mm2,

2 oz Cu Pad, VGS = 10 V

0.1 ms

10 ms

1 ms

TJ = 25°C

VDS = 48 V

ID = 15 A

0.01 ms

td(off)

100

Qgd

500

1000

1500

2000

0 102030405060 0

0 5 10 15 20 25 30 35

100

1000

1 10 100 0

0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00

NVMFD5873NL

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TYPICAL CHARACTERISTICS

Figure 12. Thermal Response

PULSE TIME (sec)

R(t) (°C/W)

10%

Duty Cycle = 50%

20%

Single Pulse

0.01

0.1

100

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

NVMFD5873NL

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PACKAGE DIMENSIONS

DFN8 5x6, 1.27P Dual Flag (SO8FL−Dual)

CASE 506BT

ISSUE E

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

1.27

0.75

1.40

3.70

4.56

PITCH

6.59

4.84

1.00

DIMENSION: MILLIMETERS

2.30

0.70

5.55

0.56

2.08

M3.25

h−−−

3.50

−−−

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED

BETWEEN 0.15 AND 0.30 MM FROM THE TERMINAL TIP.

4. PROFILE TOLERANCE APPLIES TO THE EXPOSED PAD AS WELL

AS THE TERMINALS.

5. DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD FLASH,

PROTRUSIONS, OR GATE BURRS.

6. SEATING PLANE IS DEFINED BY THE TERMINALS. A1 IS DEFINED

AS THE DISTANCE FROM THE SEATING PLANE TO THE LOWEST

POINT ON THE PACKAGE BODY.

7. A VISUAL INDICATOR FOR PIN 1 MUST BE LOCATED IN THIS ARE

1234

TOP VIEW

SIDE VIEW

BOTTOM VIEW

E1 h

0.20 C

DIM MINMILLIMETERS

A0.90

A1 −−−

b0.33

c0.20

D5.15 BSC

D1 4.70

D2 3.90

E6.15 BSC

E1 5.70

E2 3.90

e1.27 BSC

G0.45

K0.51

L0.48

0.10 C

b1 E2

A0.10 B

0.05 C

DETAIL A

MAX

−−−

0.42

−−−

4.90

4.10

5.90

4.15

0.55

−−−

0.61

N1.80 2.00

PIN ONE

IDENTIFIER

NOTE 7

NOTE 4 CSEATING

PLANE

DET AIL A NOTE 6

NOTE 3

D3 1.50 1.70

b1 0.33 0.42

ÉÉÉ

DETAIL B

ALTERNATE

CONSTRUCTION

K1 0.56 −−−

3.75

MAX

1.10

0.05

0.51

0.33

5.10

4.30

6.10

4.40

0.65

−−−

0.71

2.20

1.90

0.51

−−−

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Phone: 81−3−5817−1050

NVMFD5873NL/D

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