IRFH7911PbF HEXFET(R) Power MOSFET VDS Q1 30 Q2 30 V RDS(on) max 8.6 3.0 m (@VGS = 10V) Qg (typical) ID (@TA = 25C) : 8.3 34 nC 13 28 A ' * 6' 1& * 6 Dual PQFN 5X6 mm Applications * Control and synchronous MOSFET for buck converters Features and Benefits Benefits Features Increased power density Control and synchronous FET in one package (50% vs two PQFN 5x6) Low charge control MOSFET (8.3 nC typical) Low RDSon synchronous MOSFET (< 3.0 m) 100% Rg tested Lower switching losses results in Lower conduction losses Increased reliability Low Profile ( 0.9 mm) Increased power density Easier manufacturing Compatible with Existing Surface Mount Techniques Environmentally Friendlier Increased reliability RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL2, Consumer Qualification Orderable part number Package Type IRFH7911TRPbF IRFH7911TR2PbF PQFN 5mm x 6mm PQFN 5mm x 6mm Standard Pack Form Quantity Tape and Reel Tape and Reel 4000 400 Note EOL notice # 259 Absolute Maximum Ratings Parameter Q1 Max. Q2 Max. VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V 13 Continuous Drain Current, VGS @ 10V Pulsed Drain Current 10 23 IDM 100 230 PD @TA = 25C Power Dissipation 2.4 3.4 PD @TA = 70C Power Dissipation 1.5 2.2 TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range ID @ TA = 25C ID @ TA = 70C c g 30 Units V 20 28 0.019 A W 0.027 W/C C Q1 Max. Q2 Max. 7.7 2.5 Units C/W 53 37 -55 to + 150 Thermal Resistance Parameter f RJC Junction-to-Case RJA Junction-to-Ambient 1 g www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback May 9, 2014 IRFH7911PbF Static @ TJ = 25C (unless otherwise specified) BVDSS VDSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance Q1&Q2 Q1 Q2 Q1 Q2 VGS(th) VGS(th)/TJ Gate Threshold Voltage Gate Threshold Voltage Coefficient IDSS Drain-to-Source Leakage Current IGSS gfs Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Qg Total Gate Charge Qgs1 Pre-Vth Gate-to-Source Charge Qgs2 Post-Vth Gate-to-Source Charge Qgd Gate-to-Drain Charge Qgodr Gate Charge Overdrive Qsw Switch Charge (Qgs2 + Qgd) Qoss Output Charge RG Gate Resistance td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Q1&Q2 Q1 Q2 Q1&Q2 Q1&Q2 Q1&Q2 Q1&Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Min. 30 --- --- --- --- --- --- 1.35 --- --- --- --- --- --- 17 106 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.021 0.022 7.2 11.1 2.4 3.4 --- -6.8 -6.4 --- --- --- --- --- --- 8.3 34 2.0 7.9 1.0 3.6 3.2 11 2.1 12 4.2 15 5.0 19 1.8 0.7 12 22 15 35 12 28 5.9 14 1060 4450 230 850 110 440 Max. --- --- --- 8.6 14.5 3.0 4.0 2.35 --- --- 1.0 150 100 -100 --- --- 12 51 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Conditions Units VGS = 0V, ID = 250A V V/C Reference to 25C, ID = 1mA e e e e VGS = 10V, ID = 12A VGS = 4.5V, ID = 10A VGS = 10V, ID = 26A VGS = 4.5V, ID = 21A Q1: VDS = VGS, ID = 25A V mV/C Q2: VDS = VGS, ID = 100A m A nA S nC VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 15V, ID = 10A VDS = 15V, ID = 21A Q1 VDS = 15V VGS = 4.5V, ID = 10A Q2 VDS = 15V VGS = 4.5V, ID = 21A nC VDS = 16V, VGS = 0V ns pF Q1 VDD = 15V, VGS = 4.5V ID = 10A RG=1.8 Q2 VDD = 15V, VGS = 4.5V ID = 21A RG=1.8 VGS = 0V VDS = 15V = 1.0MHz Avalanche Characteristics Parameter Single Pulse Avalanche Energy Avalanche Current EAS IAR c Q1 Max. 12 10 Typ. --- --- d Q2 Max. 32 21 Units mJ A Diode Characteristics VSD Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IS ISM c 2 www.irf.com (c) 2014 International Rectifier Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Min. --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- --- --- 13 20 13 24 Max. 3.0 3.0 100 230 1.0 1.0 20 29 20 36 Units Conditions A MOSFET symbol showing the A integral reverse p-n junction diode. TJ = 25C, IS = 10A, VGS = 0V V TJ = 25C, IS = 21A, VGS = 0V Q1 TJ = 25C, IF = 10A, ns VDD = 15V, di/dt = 300A/s nC Q2 TJ = 25C, IF = 21A, VDD = 15V, di/dt = 280A/s Submit Datasheet Feedback e e e e May 9, 2014 IRFH7911PbF Typical Characteristics Q1 - Control FET ID, Drain-to-Source Current (A) TOP 100 BOTTOM 10 Q2 - Synchronous FET 1000 VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V TOP ID, Drain-to-Source Current (A) 1000 1 2.3V 0.1 100 BOTTOM 10 1 2.3V 0.1 60s PULSE WIDTH 60s PULSE WIDTH Tj = 25C Tj = 25C 0.01 0.01 0.1 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) 60s PULSE WIDTH ID, Drain-to-Source Current (A) Tj = 150C 100 1000 TOP 100 BOTTOM VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V TOP 10 1 100 BOTTOM VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V 10 2.3V 60s PULSE WIDTH 2.3V Tj = 150C 0.1 1 0.1 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics Fig 3. Typical Output Characteristics 1000 ID, Drain-to-Source Current(A) 1000 ID, Drain-to-Source Current(A) 10 Fig 2. Typical Output Characteristics ID, Drain-to-Source Current (A) 1000 1 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 TJ = 150C 10 1 TJ = 25C 3 4 5 VGS, Gate-to-Source Voltage (V) 10 TJ = 25C 1 60s PULSE WIDTH 6 Fig 5. Typical Transfer Characteristics www.irf.com (c) 2014 International Rectifier TJ = 150C 0.1 0.1 2 100 VDS = 15V VDS = 15V 60s PULSE WIDTH 3 VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V 1 2 3 4 VGS, Gate-to-Source Voltage (V) Fig 6. Typical Transfer Characteristics Submit Datasheet Feedback May 9, 2014 IRFH7911PbF Typical Characteristics Q1 - Control FET 10000 Q2 - Synchronous FET 100000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) C, Capacitance (pF) Coss = Cds + Cgd Ciss 1000 Coss Crss 100 10000 Ciss Coss 1000 Crss 100 10 1 10 1 100 10 100 VDS, Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Capacitance vs. Drain-to-Source Voltage Fig 8. Typical Capacitance vs. Drain-to-Source Voltage 14 ID= 10A 12 VDS= 24V VDS= 15V 10 VGS, Gate-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) 14 8 6 4 2 0 ID= 21A 12 10 8 6 4 2 0 0 5 10 15 20 25 0 20 Q g, Total Gate Charge (nC) 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100sec 10 1msec 10msec 1 Tc = 25C Tj = 150C Single Pulse 0.01 0.01 80 100 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100sec 1msec 10 10msec 1 Tc = 25C Tj = 150C Single Pulse 0.1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 11. Maximum Safe Operating Area 4 60 Fig 10. Typical Gate Charge vs. Gate-to-Source Voltage ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 1000 40 Qg, Total Gate Charge (nC) Fig 9. Typical Gate Charge vs. Gate-to-Source Voltage 0.1 VDS = 24V VDS= 15V www.irf.com (c) 2014 International Rectifier 0.01 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 12. Maximum Safe Operating Area Submit Datasheet Feedback May 9, 2014 IRFH7911PbF Typical Characteristics Q1 - Control FET Q2 - Synchronous FET 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 ID = 12A VGS = 10V 1.5 1.0 VGS = 10V 1.5 1.0 0.5 0.5 -60 -40 -20 0 20 40 60 -60 -40 -20 80 100 120 140 160 TJ , Junction Temperature (C) Fig 13. Normalized On-Resistance vs. Temperature 0 20 40 60 TJ , Junction Temperature (C) ISD, Reverse Drain Current (A) 1000 100 TJ = 150C 10 TJ = 25C 1.00 100 TJ = 150C 10 TJ = 25C 1.00 VGS = 0V VGS = 0V 0.10 0.4 0.6 0.8 1.0 1.2 1.4 0.10 1.6 0.2 VSD, Source-to-Drain Voltage (V) ID = 13A 20 15 TJ = 125C 10 TJ = 25C 5 4 6 8 10 12 14 0.6 0.8 1.0 1.2 1.4 1.6 16 VGS, Gate-to-Source Voltage (V) Fig 17. Typical On-Resistance vs.Gate Voltage www.irf.com (c) 2014 International Rectifier Fig 16. Typical Source-Drain Diode Forward Voltage ( ) RDS (on), Drain-to -Source On Resistance m ( ) RDS (on), Drain-to -Source On Resistance m 25 2 0.4 VSD, Source-to-Drain Voltage (V) Fig 15. Typical Source-Drain Diode Forward Voltage 5 80 100 120 140 160 Fig 14. Normalized On-Resistance vs. Temperature 1000 ISD, Reverse Drain Current (A) ID = 26A 12 ID = 26A 10 8 6 TJ = 125C 4 TJ = 25C 2 2 4 6 8 10 12 14 16 VGS, Gate-to-Source Voltage (V) Fig 18. Typical On-Resistance vs.Gate Voltage Submit Datasheet Feedback May 9, 2014 IRFH7911PbF Typical Characteristics Q1 - Control FET Q2 - Synchronous FET 14 30 25 10 ID , Drain Current (A) ID , Drain Current (A) 12 8 6 4 20 15 10 5 2 0 0 25 50 75 100 125 150 25 50 TA , Ambient Temperature (C) 150 2.5 VGS(th) Gate threshold Voltage (V) VGS(th) Gate threshold Voltage (V) 125 Fig 20. Maximum Drain Current vs. Ambient Temp. 2.5 ID = 25A 2.0 1.5 1.0 0.5 2.0 ID = 250A 1.5 1.0 0.5 -75 -50 -25 0 25 50 75 100 125 150 -75 -50 -25 TJ , Temperature ( C ) 25 50 75 100 125 150 Fig 22. Threshold Voltage vs. Temperature EAS, Single Pulse Avalanche Energy (mJ) 50 I D TOP 2.3A 3.1A BOTTOM 10A 40 0 TJ , Temperature ( C ) Fig 21. Threshold Voltage vs. Temperature EAS, Single Pulse Avalanche Energy (mJ) 100 TA , Ambient Temperature (C) Fig 19. Maximum Drain Current vs. Ambient Temp. 30 20 10 150 I D 5.4A 6.6A BOTTOM 21A TOP 100 50 0 0 25 50 75 100 125 150 Starting TJ, Junction Temperature (C) Fig 23. Maximum Avalanche Energy vs. Drain Current 6 75 www.irf.com (c) 2014 International Rectifier 25 50 75 100 125 150 Starting TJ, Junction Temperature (C) Fig 24. Maximum Avalanche Energy vs. Drain Current Submit Datasheet Feedback May 9, 2014 IRFH7911PbF 100 Thermal Response ( ZthJA ) D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 0.1 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 25. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (Q1) Thermal Response ( ZthJA ) 100 D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 0.1 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 26. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (Q2) 7 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback May 9, 2014 IRFH7911PbF Driver Gate Drive D.U.T - - - * D.U.T. ISD Waveform Reverse Recovery Current + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD P.W. Period VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + D= Period P.W. + + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Current Inductor Curent ISD Ripple 5% * VGS = 5V for Logic Level Devices Fig 28. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V(BR)DSS 15V DRIVER L VDS tp D.U.T RG + V - DD IAS VGS 20V A 0.01 tp I AS Fig 29a. Unclamped Inductive Test Circuit RD VDS Fig 29b. Unclamped Inductive Waveforms VDS 90% VGS D.U.T. RG + - VDD V10V GS 10% VGS Pulse Width 1 s Duty Factor 0.1 % td(on) Fig 30a. Switching Time Test Circuit Current Regulator Same Type as D.U.T. tr t d(off) Fig 30b. Switching Time Waveforms Id Vds 50K 12V tf Vgs .2F .3F D.U.T. + V - DS Vgs(th) VGS 3mA IG ID Current Sampling Resistors Fig 31a. Gate Charge Test Circuit 8 www.irf.com (c) 2014 International Rectifier Qgs1 Qgs2 Qgd Qgodr Fig 31b. Gate Charge Waveform Submit Datasheet Feedback May 9, 2014 IRFH7911PbF PQFN 5x6 Outline "C" Package Details For footprint and stencil design recommendations, please refer to application note AN-1136 at http://www.irf.com/technical-info/appnotes/an-1136.pdf PQFN 5x6 Outline "C" Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER XXXX XYWWX XXXXX PART NUMBER ("4 or 5 digits") MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 9 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback May 9, 2014 IRFH7911PbF PQFN 5x6 Outline "C" Tape and Reel Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 10 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback May 9, 2014 IRFH7911PbF Qualification information Qualification level Moisture Sensitivity Level R oHS compliant Cons umer (per JEDE C JE S D47F guidelines ) MS L2 PQFN 5mm x 6mm (per JE DE C J-S T D-020D ) Yes Qualification standards can be found at International Rectifier's web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Higher MSL ratings may be available for the specific package types listed here. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, Q1: L = 0.23mH, RG = 25, IAS = 10A; Q2: L = 0.15mH, RG = 25, IAS = 21A. Pulse width 400s; duty cycle 2%. When mounted on 1 inch square copper board. R is measured at TJ approximately 90C. Revision History Date 1/8/2010 7/15/2010 10/25/2011 5/9/2014 Comment * Pin number on front page drawing has been corrected * MSL2 Consumer Qualification on page1 has been corrected * Link from AN-1152 to AN-1136 on page 9 has been corrected * Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #259) * Updated data sheet based on corporate template. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 11 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback May 9, 2014