3875081 GE SOLID STATE Standard Power MOSFETs D1E 18259 O14 ve fj sa7soss 0018e59 &b f p 7-37-09 IRFF130, IRFF131, IRFF132, IRFF133 File Number 1564 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 7.0A and 8.0A, 60V-100V ros(On) = 0.18 O and 0.250 Features: @ SOA is power-dissipation limited @ Nanosecond switching speeds @ Linear transfer characteristics @ High input impedance @ Majority carrier device The SRFF130, 1AFF131, (RFF132 and IRFF133 are n-channel enhancement-mode silicon-gate power field- N-CHANNEL ENHANCEMENT MODE $s 92CS-33741 TERMINAL DIAGRAM TERMINAL DESIGNATION . GATE effect transistors designed for applications such as switch- ing regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching tran- DRAIN sistors requiring high speed and low gate-drive power. SOURCE (CASE) These types can be operated directly from integrated Circuits. 92CS- 37555 The IRFF-types are Supplied in the JEDEC TO-205AF (LOW-PROFILE TO-39) meta! package, JEDEC TO-205AF Absolute Maximum Ratings Parameter IAFF130. IRFF131 IAFF 132 IRFF133 Units Vos Drain - Source Voltage 100 60 100 60 v Voca Drain - Gate Voltage (Ags - 20K) 100 60 100 60 v 'p @ Te = 25C Continuous Drain Current 80 80 7.0 7.0 A lpm Pulsed Drain Current @ 32 32 28 28 A Vas Gate - Source Voltage 20 v Pp @ Tc = 25C Max. Power Dissipation 25 iSeeFig 34) Ww Linear Oerating Factor O2 {See Fig 14) wec. tim Inductive Current, Clamped (See Fig 15 and 16)L = 100yH A 32 I 32 I 28 | 2a T, Operating Junction and . a Tig Storage Tamperature Range SS to 150 c Lead Temperature 300 (0 653 in. {1.6mm} fsom case for 0s} c 202O1 pe ff za7soa1 O01aecb0 e i 3875081 G E SOLID STATE 01 18260 Electrical Characteristics @T = 25C (Unless Otherwise Specified) oT.37-O7 Standard Power MOSFETs IRFF130, IRFF131, IRFF132, IRFF133 Parameter Type Min. | Typ | Max. Units Test Conditions 8Vpsg Drain - Source Greakdowr. Voltage IRFF 130 _ . wneria2 | 100 | v Ves = OV IAFF131 - IRFF133 60 - - v tp = 250pA Vasithy Gate Threshold Voltage ALL 2.0 - 4.0 Vos = Ves. lo = 250A igss Gate Source Leskage Forward ALL = = +400 oA Vag = 20V Igsg Gate-Source Leakage Reverse ALL = 4-100 nA Vs = -20V Ipss Zero Gate Voltage Drain Current ALL - - 250 BA Vos = Max. Rating, Vag = OV - - | 1000 [7 pA Vps = Max. Rating x 0.8, Vag = OV. Te = 125C 'ofon) _ On-State Drain Current @ IRFF130 inrriai | 80 | - Vine) | R 0 Ds ) !p(on)* Sostani max.: Yas = OV iRFFI32[ 54 | _ _ A IAFF 133 * Roston) Static Drain-Source On State IAFF 130 _ Resistance @ RFF 131 0.14 | 0.18 | 8 V@g = 10V, Ip = 4.08 IRFF132 _ 0.20 | 0 25 a IRFF133 " Sts Forward Teansconductance @ ALL 4.0 | 5.5 - st Vos > Ioton) * Rastont max: 'p = 4-04 Cigg___ put Capacitance ALL | 600 | B00 pF Vag = OV. Vpg = 25V, f = 1.0MHz Coss Output Capacitance ALL - 300 | 00 pF See Fig 10 Crsg___- Reverse Transfer Capacitance ALL 100 | 150 pF Tdfany Turn Gn Delay Time ALL = 30 50 ns Vop = 0.5 BYnss- Ip = 4.0A, 20 = 50n t Rise Time ALL = 80 160 ns See Fig 17 tatotf} Turn Off Delay Time ALL - 50 100 as {MOSFET switching times are essentially ty Fall Time ALL _ a0 160 ns independent of operating temparature.} Q, Total Gate Charge Vag 10V. Ip = TBA, Vag = 0.8 Max. Rating. go - Gs 'D DS. {Gate Source Plus Gate-Drain} ALL 16 30 nc See Fig 14 for tast circut. (Gate charge is essentially Ogs Gate-Source Charge ALL _ 90 _ nc independent of operating temperature.) Qgq Gate-Dramn ("Miller") Charge ALL - 9.0 - ac Lo Interna! Drain Inductance ALL - 5.0 - oH Measured from the Modifiad MOSFET drain tead, 5 mm (0 2 symbol showing the In | from header to internal device canter of die. inductances. o to ls Internal Source tnductance ALL - 15 - aH Measured from the source lead, 5mm (0.2 tn.) from header to & Ls source banding pad. S Thermal Resistance [Finsc _Junction-to-Case ALL - _[ - ] 50 [ecw | ] [Rina _dunction-to-Ambient ALL [| [75 [ecw [Free aw Operation | Source-Drain Diode Ratings and Characteristics 1s Continuous Source Currant wFei30 | _ ~ | 80 A Modified MOSFET aymbot (Body Diode} IRFE131 showing tha integral IAFF 132 _ _ 70 A reverse P-N junction rectifier. BD IAFF 133 * Isna Pulse Source Current IAFF 130 _ _ (Body Diode) @ IRFF 131 32 A G IRFF132 : ineFizg{ ~ | ~ | 28 4] A s Vs0 Diode Forward Voltage @ IREF130 ~ 25C l= inFFigy | - | 25 v Te = 28C, Ig = 8.08, Vag = OV IRFF132 ieigg} ~ J - | 2a qd y Tg = 25C, Ig = 7.08, Vag = OV tr Reverse Recovery Time ALL = wo] - as Ty = 150C, Ip = 5.0A, dipidt = 100A/ns Onn Reverse Recovered Charge ALL = 15 = ze Ty = 180C. Ip = 8 OA, dip/dt = 100A/us ton Forward Turn on Time ALL Inuinsic turn-on time is negligible. Turn-on speed fs substantially controiled by Lg + Lp. @Ty = 25C to 150C. = @ Pulse Test: Pulse width < 300,s. Duty Cycle < 2%. Repetitive Rating Pulse width limited by max, junction temperature. See Transient Thermal impedence Curve (Fig. 5).3875081 GE SOL Standard Power MOSFETs 01 deQse7sos. oo1sesr 4 ff ID STATE IRFF130, IRFF131, IRFF132, IRFF133 204 __ x a a Ip. DRAIN CURRENT (AMPERES) a 0 x x a Vos. DRACN TO SGUACE VOLTAGE (VOLTS) cu Fig. 1 Typical Output Characteristics a = 2 S = Z x = = 5 z= & = : = a a z z = 2 S 5 3 a 04 os 12 1 26 Vog. ORAIR TOSGUACE VOLTAGE (VOLTS) Fig. 3 Typical Saturation Characteristics Bos o wn 2 THERMAL IMPEDANCE (PEA UNIT} 3 o 8 BR 002 Zanctinyt, NORMALIZED EFFECTIVE TRANSIENT 15 2 5 4 2 5 3 2 5 4-2 pT739O9 D1E 18261 Up. ORAIN CURRENT (AMPERES) Ty Tye a 2 4 6 e Vag. GATE TG SOURCE VOLTAGE (VOLTS) 10 Fig. 2 Typical Transfer Characteristics 100 OPERATION 1N 50 AREA IS LIMITED BY Rosjon} 20 | IRFF 132, 3 40 Eo1nFF 30,1 5 a 2 1.0 Tg os ry * 18000 MAX Finsc 25 OC/W 02 PULSE IRFF131,3 1 02 5 10 20 50 100 200 S00 Vos. ORAIN TO SOURCE VOLTAGE (VOLTS) Fig. 4 Maximum Safe Operating Area bet af jot2 4 a 2 PER UNITBASE Rinjc = 50 0EG CAY. 3 Tie Te Pom Zuycltt tot 2 5 1 DUTY FACTOR.O= 2 6 i? 5 ty, SQUARE WAVE PULSE OURATION [SECONOS) Fig. 5 Maximum Effective Transient Therma! Impedance, Junction-to-Case Vs, Pulse DurationO1 pe Bf sa7soa1 OOlecbe & i 3875081 G E SOLID STATE oie 18262 DT SPOOF Standard Power MOSFETs ts. TRANSCONDUCTANCE (SIEMENS) Vos > 'pion} * Boston) @ & 10 1s a B tp, ONAIN CURRENT (AMPERES) Fig. 6 ~ Typical Transconductance Vs. Drain Current 1.25 120 115 1.10 1.05, 1.00 SOURCE BREAKOOWN VOLTAGE (NORMALIZED) 095 as oss BV pss DAAIN-TO O25 80 40 -20 0 2 4 GO 80 100 120 140 T), JUNCTION TEMPERATURE (9C} Fig. Breakdown Voltage Vs. Temperature 7000 130 Gigs = Oey + Cog, Cys SHORTED Cres = Sg : CeCe ee 5 nso oo 6 Te tg = 3 Cae + Cod FS 3 = - 3s 8 @ 10 n x ag 2 Vpg ORAIN TO SOURCE VOLTAGE (VOLTS) Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage IRFF130, IRFF131, IRFF132, IRFF133 ing. REVERSE ORAIN CURRENT (AMPERES) 10 Q 05 10 15 20 25 3a Vgp, SOURCE-TO DRAIN VOLTAGE {VOLTS} Fig. 7 Typical Source-Drain Diode Forward Voltage "2.50 288 2.00 178 150 1.28 {NORMALIZEO) 100 075 050 Poston). ORAIN-TO SOUARE ON-STATE RESISTANCE 025 o 60 -40 -20 0 20 40 6 8 10 HO NO Ty, JUNCTION TEMPERATURE (0C} Fig. 9 Normalized On-Resistance Vs. Temperature Ups = 20V. | l | = AV. IRFF130, 1 t Ip = 18A FOR TEST CIRCUIT FIGURE 18 Vas, GATE TO SOURCE VOLTAGE (VOLTS) D 8 16 - a RN 40 Og TOTAL GATE CHARGE inC} Fig. 11 Typical Gate Charge Vs. Gate-to-Source Voltage 2053875081 GE SOLID STATE Standard Power MOSFETs O1 pe Bsazsosi OO1debs 4 i D T39-OF O1E 18263 IRFF130, IRFF131, IRFF132, IRFF133 0s Fostany MEASURED PULSE 20 gs DURATION. INITIAL Ty = 25C (HEATING OF 2.0 4s PULSE IS } a ry o ~ & Aston). DRAIN TO SDURCE ON RESISTANCE {OHMS) : o 10 2 Ro) 40 50 60 Ig. GRAIN CURRENT (AMPERES) Fig. 12 Typical On-Resistance Vs. Drain Current Pp, POWEA DISSIPATION (WATTS) S 20 40 &0 tp, ORAIN CURRENT (AMPERES) - ~ ri] $0 1% 100 125 180 To, CASE TEMPERATURE (C) Fig. 13 ~ Maximum Drain Current Vs. Case Temperature: a0 10a 120 140 Fg, CASE TEMPERATURE (00) - Fig. 14 Power Vs. Temperature Derating Curve VARY ty TO OBTAIN SEQUINED PEAR ty E, = 058Vg55 o*0758Vgcs Fig. 15 Clamped Inductive Test Circuit ADJUST Ay TO OBTAIN SPECIFIED ty PULSE GENERATOR r----- 10 scope esin HIGH FREQUENCY SHUNT Fig. 17 Switching Time Test Circuit Fig. 16 Clamped Inductive Waveforms o *Yos (ISOLATED SUPPLY} CUARENT REGULATOA 6 SAME TYPE AS OUT pv 1 BATTERY | Ib CURRENT SHUNT CURRENT > SHUNT Fig. 18 Gate Charge Tast Circuit