2SK1101-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-IJ SERIES Wi Features @ lHigh speed switching @1.ow on-resistance @ lo secondary breakdown @\.ow driving power @ High voltage @'/o0=+30V Guarantee @. \valanche-proof BH Applications Switching regulators @IPS @ DC-DC converters @ Outline Drawings 2.5440,2 _ 40.5 G32 3% OH | a 4 eo me mn 3) tt ata | | reso . | eseios o7o2 T all: tt 1:Gate 2:Drain 3:Source 208 t @ Seneral purpose power amplifier Mi Max. Ratings and Characteristics JEDEC EIAJ SC-67 Wi Equivalent Circuit Schematic @Absolute Maximum Ratings(Te=25C) : _ Items Symbols Ratings Units ___Drain-source voltage Voss 400 Vv continuous drain current Ip 10 A : _- Drain( ___ Pulsed drain current Inguiss 35 A ind) ___ continuous reverse drain current | Ine 10 A ___ aate-source peak voltage Voss +30 Vv | __ Max. power dissipation Pp 50 Ww Gate(G) Operating and storage Ten 156 C __ temperature range Tats 55~+150) C Source(S} @Hlectrical Characteristics(T = 25C) __ Items Symbols Test Conditions Min. Typ. Max. | Units __ Drain-source breakdown voltage | Visrwss Ipb=lImA Ves=0V 450 Vv _ Gate threshold voltage Vesan) Ipb=lmA_ Vos= Ves 2.0 3.0 5.0 Vv Zero pate voltage drain current I Vos = 450V Tes = 25C 10 500 uA 4 oss Vos =0V Ten = 125C 0.2 10 [mA ___Gate-source leakage current | Tess Veg=t30V_ Vos =0V 10 100 nA __ Drain-source on-state resistance | Roygion) ip=5A Vas =10V 0.5 0.65 Q ___ Forward transconductance fits Inp=5A Vos =25V 40 6.5 $ ___ Input capacitance Ciss Vos =25V 1200 1800 ___ Output capacitance Cass Vos =0V 160 240 pF __ Reverse transfer capacitance | Crss f =1MHz 70 100 Turn-on time ton facut _ _ 30) 45 tant tarom tty) ts ve ~ oe Ib =10A 30 | 120 ns Turn-off time ter taol R= 2560 160 240 __ Mtegoty rte) . te 30 120 __ Diode forward on-voltage Vev In=2%Ipp Voes=OV Ten=25C 1.10 1.5 Vv __ Reverse recovery time tre Ir=Ion_di/d =100A/ ys Ton = 25C 500 ns @ hermal Characteristics _ Items Symbols Test Conditions Min. Typ. Max. | Units or . Rtnten-ay channel to air 62.5 | C/W Thermal Resists . __ ance Rinten-o) channel to case 2.0 c/w A2-1482SK 1101-O1MR Characteristics ]n=f(VesV Bus PULSE TEST, Toh=25'C ay - 7.5 7 (A) 0 10 20 3G VoslV) Typical Output Characteristics lo=f(vos) 80.3 PULSE TEST. Toh=23C [A] Vos lV) Typical Transfer Characteristics gfs=1d 0: 60us PULSE TEST.\Vos=25 Toh=25c gts (3) a 0 20 infAJ Typical Forward Transconductance vs. lp A2-149 FUJI POWER MOS-FET Ros(on=t(T ch) J o=SA,\os=10V 10 Rosiow) (a) 05 o 3e 0 50 100 150 TalC) On State Resistance vs. Teh Rostem-TI er) SC.a PULSE TEST Tch=e IGS no SCV 5.5/7 64 8.5 Rosiowi 10 (a) 0 1 20 ILA) Typical Drain-Source on State Resistance vs. |p Ves(thi=t(Toh) lo=mAVrss. far Mae Vesim 2 W) 0 ee) 100 15C TC) Gate Threshold Voltage vs. TenFUJI POWER MOS-FET 2SK 1101-01MR 800 VYoes=tloghl b=104, C=fl vos). ves=OV.1= MEE 400 300 200 B Veg Vos tv) (Vv) 100 c 0 2c 3c o 50 100 Vos) Og (nC) Typical Capacitance vs. Vos Typical Input Charge LF=t(Vso) 8Ous PULSE TES* Po=t(Tc) a ro 5 Toh=28'C Typ. Po Ir 199 tw) (A) 5 C 6.5 ac Cc ac eC BC Vsol) T.{C) Forward Characteristics of Reverse Diode Allowable Power Dissipation vs. Tc lo=ftVos): D=0.01,Ts=25C \ 10! I | 1 age lo j0 F th (Al , yo" Cc, WI 10* 07 105 104 co ce ct ce 10! 10? se tts) Vos() Transient Thermal Impedance Safe Operating Area A2-150Cz E LAAFOYOANR (MRO. HH F-2. P MES SURO O RM, HeithOMiC ky HMO P EES BESHSLTEMHO EST COA PO PIMEN TSR EMA SNOMA I, TOWRORMRO LEAF LT FO BEGEREL TC EKA, AAR OSIM L TS AGM, BLAS eA LARRNS AWE SLOCHO. AAP OPI ES TLR Hi, EOPLHER OD SHWIZ et BREE ISSO RT ITI BOTAN RA, SiMMATRBORALIZRAAO MLC BM TOET., LOL, AS & SHE CRIB OREO SO ET, BiLRAR ERROR, PRE UTASEM. ARSE SMBS SIRO Hee AMES, WEED AAT META aka oe ER EMR MOF AML TS Ra, AA SOP LHL Tl SARS. MMO APR eS PALO L TR EA AM SLE eR Loa TET, -dyta-8 OARS MEER (80K) - amet - LEHRER EOF 2 TLE - RRETVAL BLR mF HGRA dy bok AAS OT AMON BE. FROLISUICE MEMS eH Ohi a + SACRE CP RODSRIL, Cees WO L, TRAST BRE, COAF OTOWRECHSOMBICBNAT SAI, SELCMAMERK SAYER HEL CS, BSB L GILL Ne OP eT VAT ERE, ReHOLMOOBOLERLMUA LL ABH ST, > fee CER, AFA ED ~ a AHS A SOI Fe BA a + A Ma OE WER Pe | REMARO 7 07) SRST Hi TR EA BRAS PHO KS CIS, BPO CRO EMAL Sted Kata, > Fue ALE RTS AR FB + BAF a Re + BIER Hata Re Beaeaar AATUSOH-MEMLPAMOMMAM IC OI Tid, HICKS SILORHABRRT, INAFIFOAMCLC AMON AOELAS, MME SICA IER ERI, SOURIS zLS, AHO 2 OUFRICR bee MIke eae SNES OIE 2 OUR ECA SBE S25 EOC ED RA, Bt Seas BWR ND EEA USE BHERR Gr (03) 5388-7657 RIPE HEME ARES om (06) 455-6467 = aie er ath tak Se eA 2 gm (03) 5388-7681 ACHES MR @ (0764) 41-1231 WREBRSRR ADT B03 mer Giese TRSOSS RAKSBER wD (03) 6388-7680 POE SAR ER @ (0878) 51-0185 wm (93) 5389-7651 RBSSS Bf (0263) 36-6740 Patt MAL B (052) 204-0205 9) SS 8 O0 wm (03) 5388-7685 = AU EMRE (092) 7391-7132