BCX54 ...- BCX56... NPN Silicon AF Transistors * For AF driver and output stages 1 2 * High collector current 3 2 * Low collctor-emitter saturation voltage * Complementary types: BCX51...BCX53 (PNP) * Pb-free (RoHS compliant) package * Qualified according AEC Q101 Type Marking Pin Configuration BCX54-16 BD 1=B 2=C 3=E SOT89 BCX55 BE 1=B 2=C 3=E SOT89 BCX55-16 BM 1=B 2=C 3=E SOT89 BCX56 BH 1=B 2=C 3=E SOT89 BCX56-10 BK 1=B 2=C 3=E SOT89 BCX56-16 BL 1=B 2=C 3=E SOT89 1 Package 2011-09-19 BCX54 ...- BCX56... Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value - BCX54 45 BCX55 60 BCX56 80 Collector-base voltage Unit V VCBO BCX54 45 BCX55 60 BCX56 100 Emitter-base voltage VEBO 5 Collector current IC 1 Peak collector current, tp 10 ms ICM 1.5 Base current IB 100 Peak base current IBM 200 Total power dissipation- Ptot 2 W 150 C A mA TS 120C Junction temperature Tj Storage temperature Tstg Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS -65 ... 150 Value 15 Unit K/W 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 2 2011-09-19 BCX54 ...- BCX56... Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 10 mA, IB = 0 , BCX54 45 - - IC = 10 mA, IB = 0 , BCX55 60 - - IC = 10 mA, IB = 0 , BCX56 80 - - IC = 100 A, IE = 0 , BCX54 45 - - IC = 100 A, IE = 0 , BCX55 60 - - IC = 100 A, IE = 0 , BCX56 100 - - 5 - - Collector-base breakdown voltage Unit V V(BR)CBO Emitter-base breakdown voltage V(BR)EBO IE = 10 A, IC = 0 Collector-base cutoff current A ICBO VCB = 30 V, IE = 0 - - 0.1 VCB = 30 V, IE = 0 , TA = 150 C - - 20 DC current gain1) - hFE IC = 5 mA, VCE = 2 V 25 - - IC = 150 mA, VCE = 2 V, BCX55/BCX56 40 - 250 IC = 150 mA, VCE = 2 V, BCX55-10/BCX56-10 63 100 160 IC = 150 mA, VCE = 2 V, BCX54-16...BCX56-16 100 160 250 IC = 500 mA, VCE = 2 V 25 - - VCEsat - - 0.5 VBE(ON) - - 1 fT - 100 - Collector-emitter saturation voltage1) V IC = 500 mA, IB = 50 mA Base-emitter voltageIC = 500 mA, VCE = 2 V AC Characteristics Transition frequency MHz IC = 50 mA, VCE = 10 V, f = 20 MHz 1Pulse test: t < 300s; D < 2% 3 2011-09-19 BCX54 ...- BCX56... DC current gain hFE = (IC) VCE = 2 V Collector-emitter saturation voltage IC = (VCEsat ), hFE = 10 10 3 4 BCX 54...56 10 EHP00449 mA C 3 10 5 100C 10 2 25C 100 C 25 C -50 C 2 10 5 -50C 1 10 5 10 1 -1 10 10 0 10 1 10 2 10 0 10 3 0 0.2 0.4 0.6 V 0.8 VCE sat Base-emitter saturation voltage Collector current IC = (VBE ) IC = (VBEsat), hFE = 10 VCE = 2V 10 4 BCX 54...56 EHP00450 10 4 BCX 54...56 EHP00448 mA mA C C 10 3 10 3 5 5 100 C 25 C -50 C 100 C 25 C -50 C 10 2 10 2 5 5 1 1 10 10 5 5 10 0 0 0.2 0.4 0.6 0.8 10 0 1.0 V 1.2 0 0.2 0.4 0.6 0.8 1.0 V 1.2 VBE VBE sat 4 2011-09-19 BCX54 ...- BCX56... Collector cutoff current ICBO = (TA) VCBO = 30 V BCX 54...56 10 4 nA CB0 Transition frequency fT = (IC) VCE = parameter in V, f = 2 GHz EHP00447 10 3 BCX 54...56 EHP00445 MHz max 10 3 fT 5 5 10 2 5 10 2 typ 10 1 5 10 5 0 5 10 -1 0 50 100 C 10 1 10 0 150 5 10 1 5 10 2 mA 10 3 C TA Total power dissipation P tot = (TS) Permissible Pulse Load RthJS = (tp) 10 2 2.4 RthJS Ptot W 1.6 10 1 1.2 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 10 0 0.8 0.4 0 0 15 30 45 60 75 90 105 120 C 10 -1 -6 10 150 TS 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 2011-09-19 BCX54 ...- BCX56... Permissible Pulse Load Ptotmax/PtotDC = (tp ) Ptotmax/PtotDC 10 3 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 6 2011-09-19 Package SOT89 BCX54 ...- BCX56... Package Outline 4.5 0.1 45 B 1.5 0.1 1) 1.6 0.2 0.2 MAX. 2 2.75 +0.1 -0.15 10 MAX. 1 0.2 1 0.15 4 0.25 1 0.1 1) 2.5 0.1 0.25 0.05 3 1.5 0.35 0.1 0.45 +0.2 -0.1 3 0.15 M B x3 0.2 B 1) Ejector pin markings possible Foot Print 1.2 1.0 2.5 2.0 0.8 0.8 0.7 Marking Layout (Example) BAW78D Type code Pin 1 2005, June Date code (YM) Manufacturer Standard Packing Reel o180 mm = 1.000 Pieces/Reel Reel o330 mm = 4.000 Pieces/Reel 0.2 4.6 12 8 Pin 1 4.3 7 1.6 2011-09-19 BCX54 ...- BCX56... Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 8 2011-09-19