General Description
The AAT8303 is a low threshold P Channel MOS-
FET designed for the battery, cell phone, and PDA
markets. Using AnalogicTech™'s proprietary ultra-
high density Trench technology, and space saving
small outline J-lead package, performance superi-
or to that normally found in a larger footprint has
been squeezed into the area of a TSOP6 package.
Applications
• Battery Packs
• Cellular & Cordless Telephones
• Battery-powered portable equipment
• Load Switches
Features
•V
DS(MAX) = -20V
•I
D(MAX) 1= -10A @ 25°C
• Low RDS(ON):
• 14 mΩ@ VGS = -4.5V
• 24 mΩ@ VGS = -2.5V
TSOPJW-8 Package
DDDD
SSSG
Top View
1234
8765
AAT8303
20V P-Channel Power MOSFET
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Thermal Characteristics
Symbol Description Typ Max Units
RθJA Junction-to-Ambient steady state 186 105 °C/W
RθJA2 Junction-to-Ambient t<5 seconds 144 54 °C/W
RθJF Junction-to-Foot 127 32 °C/W
Symbol Description Value Units
VDS Drain-Source Voltage -20 V
VGS Gate-Source Voltage ±12
IDContinuous Drain Current @ TJ=150°C 1TA= 25°C ±10
TA= 70°C ±8 A
IDM Pulsed Drain Current 2±48
ISContinuous Source Current (Source-Drain Diode) 1-2.3
PDMaximum Power Dissipation 1TA= 25°C 2.3 W
TA= 70°C 1.5
TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 °C
Preliminary Information
8303.2003.09.0.62 1
Electrical Characteristics (TJ=25°C unless otherwise noted)
Note 1: Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5 second pulse
on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA where
the foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design, howev-
er RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
Note 2: Pulse test: Pulse Width = 300 µs
Note 3: Guaranteed by design. Not subject to production testing.
Symbol Description Conditions Min Typ Max Units
DC Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250µA -20 V
RDS(ON) Drain-Source ON-Resistance 2VGS=-4.5V, ID=-10A 11 14 mΩ
VGS=-2.5V, ID=-7.6A 18 24
ID(ON) On-State Drain Current 2VGS=-4.5V, VDS=-5V (Pulsed) -48 A
VGS(th) Gate Threshold Voltage VGS=VDS, ID=-250µA -0.6 V
IGSS Gate-Body Leakage Current VGS=±12V, VDS=0V ±100 nA
IDSS Drain Source Leakage Current VGS=0V, VDS=-20V -1 µA
VGS=0V, VDS=-16V, TJ=70°C 3-5
gfs Forward Transconductance 2VDS=-5V, ID=-10A 31 S
Dynamic Characteristics 3
QGTotal Gate Charge VDS=-10V, RD=1.0Ω, VGS=-4.5V 36
QGS Gate-Source Charge VDS=-10V, RD=1.0Ω, VGS=-4.5V 5 nC
QGD Gate-Drain Charge VDS=-10V, RD=1.0Ω, VGS=-4.5V 13
tD(ON) Turn-ON Delay VDS=-10V, VGS=-4.5V, RD=1.0Ω, RG=6Ω10
tRTurn-ON Rise Time VDS=-10V, VGS=-4.5V, RD=1.0Ω, RG=6Ω72 ns
tD(OFF) Turn-OFF Delay VDS=-10V, VGS=-4.5V, RD=1.0Ω, RG=6Ω78
tFTurn-OFF Fall Time VDS=-10V, VGS=-4.5V, RD=1.0Ω, RG=6Ω108
Source-Drain Diode Characteristics
VSD Source-Drain Forward Voltage 2VGS=0, IS=-10A -1.1 V
ISContinuous Diode Current 1-2.3 A
AAT8303
20V P-Channel Power MOSFET
28303.2003.09.0.62
Typical Characteristics
(TJ= 25ºC unless otherwise noted)
Threshold Voltage
TJ (°C)
VGS(th) Variance (V)
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
0.4
0.5
-50 -25 0 25 50 75 100 125 150
ID = 250µA
On-Resistance vs. Junction Temperature
TJ (°C)
Normalized RDS(ON)
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
-50 -25 0 25 50 75 100 125 150
VGS = 4.5V
ID = 10A
On-Resistance vs. Gate to Source Voltage
VGS (V)
RDS(ON) (Ω)
0
0.02
0.04
0.06
012 34 5
ID = 10A
On-Resistance vs. Drain Current
ID (A)
RDS(ON) (Ω)
0
0.008
0.016
0.024
0.032
0.04
0 8 16 24 32 40 48
VGS = 2.5V
VGS = 4.5V
Transfer Characteristics
VGS (V)
ID (A)
VD=VG
0
8
16
24
32
40
48
01234
-55°C
25°C
125°C
Output Characteristics
VDS (V)
IDS (A)
1.5V
2V
2.5V
5V
4.5V
4V
0
8
16
24
32
40
48
0 0.5 1 1 .5 2 2 .5 3
3V
3.5V
AAT8303
20V P-Channel Power MOSFET
8303.2003.09.0.62 3
Typical Characteristics
(TJ= 25ºC unless otherwise noted)
Transient Thermal Response, Junction to Ambient
Time (s)
Normalized Effective
Transient Thermal Impedance
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1 10 100 1000
.01
.02
.1
.2
.5
Single Pulse
Single Pulse Power, Junction to Ambient
Time (s)
Power (W)
0
5
10
15
20
25
30
35
40
45
50
0.001 0.01 0.1 1 10 100 1000
Capacitance
VDS (V)
Capacitance (pF)
Ciss
Coss
Crss
0
1000
2000
3000
4000
5000
0 5 10 15 20
Source-Drain Diode Forward Voltage
VSD (V)
IS (A)
0.1
1
10
100
0 0 .2 0.4 0 .6 0.8 1 1.2
TJ = 150°CTJ = 25°C
Gate Charge
QG, Charge (nC)
VGS (V)
0
1
2
3
4
5
0 5 10 15 20 25 30 35 40
VD=10V
ID=10A
AAT8303
20V P-Channel Power MOSFET
48303.2003.09.0.62
Ordering Information
Note 1: XYY = assembly and date code.
Package Information
TSOPJW-8
All dimensions in millimeters.
0.65 BSC 0.65 BSC 0.65 BSC
0.325 ± 0.075
2.85 ± 0.20
2.40 ± 0.10
3.025 ± 0.075
0.055 ± 0.045
0.9625 ± 0.0375
1.0175 ± 0.0925
0.010
0.15 ± 0.05
7°0.04 REF
0.45 ± 0.15
2.75 ± 0.25
Package Marking1Part Number (Tape and Reel)
TSOPJW-8 JXXYY AAT8303ITS-T1
AAT8303
20V P-Channel Power MOSFET
8303.2003.09.0.62 5
AAT8303
20V P-Channel Power MOSFET
68303.2003.09.0.62
Advanced Analogic Technologies, Inc.
830 E. Arques Avenue, Sunnyvale, CA 94085
Phone (408) 737-4600
Fax (408) 737-4611
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rights, or other intellectual property rights are implied.
AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice, and advise customers to obtain the latest
version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale
supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability.
AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech’s standard warranty. Testing and
other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed.
