Electrical Characteristics (TJ=25°C unless otherwise noted)
Note 1: Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5 second pulse
on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA where
the foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design, howev-
er RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
Note 2: Pulse test: Pulse Width = 300 µs
Note 3: Guaranteed by design. Not subject to production testing.
Symbol Description Conditions Min Typ Max Units
DC Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250µA -20 V
RDS(ON) Drain-Source ON-Resistance 2VGS=-4.5V, ID=-10A 11 14 mΩ
VGS=-2.5V, ID=-7.6A 18 24
ID(ON) On-State Drain Current 2VGS=-4.5V, VDS=-5V (Pulsed) -48 A
VGS(th) Gate Threshold Voltage VGS=VDS, ID=-250µA -0.6 V
IGSS Gate-Body Leakage Current VGS=±12V, VDS=0V ±100 nA
IDSS Drain Source Leakage Current VGS=0V, VDS=-20V -1 µA
VGS=0V, VDS=-16V, TJ=70°C 3-5
gfs Forward Transconductance 2VDS=-5V, ID=-10A 31 S
Dynamic Characteristics 3
QGTotal Gate Charge VDS=-10V, RD=1.0Ω, VGS=-4.5V 36
QGS Gate-Source Charge VDS=-10V, RD=1.0Ω, VGS=-4.5V 5 nC
QGD Gate-Drain Charge VDS=-10V, RD=1.0Ω, VGS=-4.5V 13
tD(ON) Turn-ON Delay VDS=-10V, VGS=-4.5V, RD=1.0Ω, RG=6Ω10
tRTurn-ON Rise Time VDS=-10V, VGS=-4.5V, RD=1.0Ω, RG=6Ω72 ns
tD(OFF) Turn-OFF Delay VDS=-10V, VGS=-4.5V, RD=1.0Ω, RG=6Ω78
tFTurn-OFF Fall Time VDS=-10V, VGS=-4.5V, RD=1.0Ω, RG=6Ω108
Source-Drain Diode Characteristics
VSD Source-Drain Forward Voltage 2VGS=0, IS=-10A -1.1 V
ISContinuous Diode Current 1-2.3 A
AAT8303
20V P-Channel Power MOSFET
28303.2003.09.0.62