SM5A27
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Revision: 23-Apr-14 1Document Number: 88381
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Surface Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Junction passivation optimized design passivated
anisotropic rectifier technology
•T
J = 175 °C capability suitable for high reliability
and automotive requirement
• Low leakage current
• Low forward voltage drop
• High surge capability
• Meets ISO7637-2 surge specification
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting,
especially for automotive load dump protection application.
MECHANICAL DATA
Case: DO-218AB
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity: Heatsink is anode
PRIMARY CHARACTERISTICS
VBR 27 V
PPPM (10 x 1000 μs) 3600 W
PD5 W
VWM 22 V
IRSM 70 A
IFSM 500 A
TJ max. 175 °C
Polarity Uni-directional
Package DO-218AB
DO-218AB
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Peak pulse power dissipation with 10/1000 μs waveform PPPM 3600 W
Power dissipation on infinite heatsink at TC = 25 °C (fig. 1) PD5.0 W
Non-repetitive peak reverse surge current for 10 μs/10 ms exponentially
decaying waveform IRSM 70 A
Maximum working stand-off voltage VWM 22.0 V
Peak forward surge current 8.3 ms single half sine-wave IFSM 500 A
Operating junction and storage temperature range TJ, TSTG -55 to +175 °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE TYPE
BREAKDOWN VOLTAGE
VBR AT IT
(V)
TEST CURRENT
IT
(mA)
STAND-OFF VOLTAGE
VWM
(V)
MIN. MAX.
SM5A27 24 30 10 22
SM5A27
www.vishay.com Vishay General Semiconductor
Revision: 23-Apr-14 2Document Number: 88381
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Measured on a 300 μs square pulse width
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Power Derating Curve Fig. 2 - Load Dump Power Characteristics
(10 ms Exponential Waveform)
ADDITIONAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNIT
Zener voltage temperature coefficient IZ = 10 mA VZTC --36mV/°C
Clamping voltage for 10 μs/10 ms
exponentially decaying waveform IPP = 55 A VC- - 40.0 V
Instantaneous forward voltage IF = 6.0 A VF (1) --1.0
V
IF = 100 A - 0.95 -
Reverse leakage current Rated VWM
TJ = 25 °C IR
--0.2
μA
TJ = 175 °C - - 10.0
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Typical thermal resistance, junction to case RJC 1.0 °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
SM5A27HE3/2D (1) 2.505 2D 750 13" diameter plastic tape and reel,
anode towards the sprocket hole
0
2.0
4.0
6.0
8.0
050 100 150 200
Power Dissipation (W)
Case Temperature (°C)
0
1000
500
1500
2000
2500
3000
25 50 75 100 125 150 175
Load Dump Power (W)
Case Temperature (°C)
SM5A27
www.vishay.com Vishay General Semiconductor
Revision: 23-Apr-14 3Document Number: 88381
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Pulse Waveform
Fig. 4 - Reverse Power Capability
Fig. 5 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Reverse Characteristics
Fig. 7 - Typical Transient Thermal Impedance
0
50
100
150
010 20 30 40
Input Peak Pulse Current (%)
t - Time (ms)
t
d
tr = 10 μs
Peak Value
IPPM
Half Value -
IPPM
IPP
2
TJ = 25 °C
Pulse Width (td) is
Dened as the Point
Where the Peak Current
Decays to 50 % of IPPM
Reverse Surge Power (W)
1000
10 000
10 100
Pulse Width (ms) - ½ IPP Exponential Waveform
100
10
1.0
0.1
0.01
0.35 0.45 0.55 0.65 0.75 0.85 0.95
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
TJ = 150 °C
TJ = 25 °C
100
10
1
0.1
0.01
0.001
0.0001
Instantaneous Reverse Current (μA)
Percentage of VBR (%)
5 203550658095
TJ = 25 °C
TJ = 175 °C
Transient Thermal Impedance (°C/W)
t - Pulse Width (s)
100
100
10
10
1
1
0.1
0.1
0.01
0.01
R
θJC
R
θJA
SM5A27
www.vishay.com Vishay General Semiconductor
Revision: 23-Apr-14 4Document Number: 88381
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-218AB
Mounting Pad Layout
0.413 (10.5)
0.374 (9.5)
0.091 (2.3)
0.067 (1.7)
0.116 (3.0)
0.093 (2.4)
0.150 (3.8)
0.126 (3.2)
0.366 (9.3)
0.343 (8.7)
0.606 (15.4)
0.583 (14.8)
0.116 (3.0)
0.093 (2.4)
0.628 (16.0)
0.592 (15.0)
0.539 (13.7)
0.524 (13.3)
0.366 (9.3)
0.343 (8.7)
0.406 (10.3)
0.382 (9.7)
0.342 (8.7)
0.327 (8.3)
0.413 (10.5)
0.374 (9.5)
0.028 (0.7)
0.020 (0.5)
0.138 (3.5)
0.098 (2.5)
Lead 1
0.098 (2.5)
0.059 (1.5)
Lead 2/Metal Heatsink
0.197 (5.0)
0.185 (4.7)
0.016 (0.4) MIN.
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Revision: 01-Jan-2019 1Document Number: 91000
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