\ SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS T0-98 PACKAGE Device 2N4256 2N4424 2N4425 2N5172 2N5174 2N5232 2N5232A 2N5249 2N5249A 2N5305 2N5306 2N5307 2N5308 2N5309 2N5310 2N5311 2N5354 2N5355 2N5356 2N5365 2N5366 2N5418 2N5419 2N5420 2N6076 Di6G6 D29E1 D29E2 D29E4 D29E5 D29E6 D29E9 D29E10 D33D21 D33D22 033024 033025 D33D 26 D33D29 D33D30 bmn ; : BVcEO @10mA (Vv) 40 40 40 25 75 50 50 50 50 25 40 50 50 50 Nee Vce(sat) Min.-Max. @ Ic, Voge (V) |(V) Max. @ lo, Ip Toe ee 7 : 0.125 | 10mA, 1.0mA aa | 0.3 5OmA, 3mA as 0.3 50mA, 3mA | 0.25 | 10mA, 1mA : 0.95 10mA, 1.0mMA a 0.125 | 10mA, 1mA a 0.125 | 10mA, 1mA ; : 0.125 | 10mA, 1mA : : 0.125 | 10mA, 1mA . a i 1.4 }200mA, 0.2mA | 1.4 200mA, 0.2mA | 1.4 200mA, 0.2mA 1.4 200mA, 0.2mA : 0.125 | 10mA, 1mA i 0.125 10mA, 1mA IC 0.125 | 10mA, 1mA : 20 0.25 5OmA, 2.5mA : : 0.25 50mA, 2.5mA i 0.25 50mA, 2.5mA i 0.25 50mA, 2.5mA 0.25 50mA, 2.5mA ] 0.25 50mA, 2.5mA 0.25 50mA, 2.5mA | 0.25 50mA, 2.5mA : 0 0.25 10mA, 1.0mA : a 0.6 10mA, 1.0mA 0.75 |500mA, 50mA 0.75 |500mA, 50mA | 0.75 |500mA, 50mA C 0.75 |S00mA, 50mA | Bi : ' 0.75 |500mA, 50mA ' . 500mA, 50mA 0.75 |500mA, 50mA : ; 0.75 |500mA, 50mA i ) 0.75 |500mA, 50mA : 0.75 500mA, 50mA |] 0.75 |500mA, 50mA : 21 0.75 500mA, 50mA | : 0.75 |500mA, 50mA : - 0.75 |500mA, 50mA . 102 fr Cp @10V Typical (MHz) Py @ 25C (mW) 1 MHz Typical (Pf) gqaagqd NNN BeaBAEB NNNNN VN aad Oprah\y DEVICE NPN 2N5418 2N5419 D33D21 D33D22 D33D24 D33D25 D33D26 D33D29 D33D30 PNP 2N5354 2N5355 2N6076 D29E1 D29E2 D29E4 D29E5 D29E6 D29E9 D29E10 SILICON SIGNAL TRANSISTORS COMPLEMENTARY PAIRS TO-98 PACKAGE Min.-Max. 40-120 100-300 40-120 100-300 100-500 60-200 150-500 60-120 100-200 150-300 60-120 100-200 60-200 150-500 60-120 100-200 150-300 60-120 100-200 ENCAPSULATED TO-98 hee VcE(SAT) @ lo, Vee (v) (Vv) Max. @ le, Ig 50mA, 1 50mA, 1 50mA, 1 50mA, 1 10mA, 10 2mA, 2 2mA, 2 2mA, 2 2mA, 2 2mA, 2 2mA, 2 2mA, 2 2mA, 2 2mA, 2 2mA, 2 2mA, 2 2mA, 2 2mA, 2 2mA, 2 ENCAPSULATED TO-92 106 COMPLEMENT 2N5418 2N5419 2N5354 2N5355 2N5172 D33D21 D33D22 033D24 D33D 25 033026 D33D29 D33030 D291 D29E2 D29E4 D29E5 D29E6 D29E9 D29E 10Silicon . I eo | om Transistors 2N5172 2N6076 The General Electric 2N5172 and 2N6076 transistors are designed for general purpose applications. The planar, passivated construction assures excellent device stability and life. This high performance and high value is made possible by advanced manufacturing techniques, epoxy encapsulation and utilization of full line beta distribution. Significant savings may be realized by designing equipment utilizing these full line distribution type transistors. absolute maximum ratings: (25C) (unless otherwise specified) A Voltages Collector to emitter* Vcro 25 Volts oe Emitter to base* VEBo 5 Volts | ywpor INCHES Collector to base* VcBo 25 Volts Current 019 Collector (steady state)}* Ic 100 mA Dissipation , 108 Total Power (free air at 25 C)}+* Pr 360 mW : Temperature Storage* Tstg 55 to +150 ac NOTE WLEAC Dae Operating j +125 Cc i DIAMETER 1S CONTROLLED IN THE Lead Temperature, 1/16" + 1/32" from 7ONe ee aenen -070 AND .250 FROM THE SEATING case for 10 seconds maximum Tr +260 C oF oz 1S HELD. eso ano emp orvensaman: Determined from power limitations due to saturation voltage at this current. +tDerate 3.6 mW/C increase in ambient temperature above 25 C. electrical characteristics: (25C) (unless otherwise specified) Static Characteristics Min. Typ. Max. Collector Cutoff Current (Vcp = 25V),* IcBo 100 nA (Veg = 25V; Ta = 100C) Icpo 10 pA Collector Cutoff Current (Vcop = 25V) Ices 100 nA Emitter Cutoff Current (Veg = 5V)* 2N5172 IgBo 100 nA (Veg = 3V)* 2N6076 leso 100 nA Forward Current Transfer Ratio (Vcg = 10V, Ic= 10 mA)* hee t 100 500 Collector-Emitter Breakdown Voltage (Ic= 10 mA)* V(BR)CEO 25 Volts Collector Saturation Voltage (Ic= 10 mA, Ip= 1 mA)* Vcx(sat) 25 Volts Base Saturation Voltage (Ic=10 mA, Ip= 1 mA) VBE(sat) 80 Volts Base Emitter Voltage (Vcr = 10V, Ic= 10 mA)* VBE 0.5 1.2 Volts Dynamic Characteristics Forward Current Transfer Ratio (Vo, = LOV,1, = 10 mA, f= 1kHz)* hee 100 750 Output Capacitance, Common Base (Vor = 10V, I, = 0, f= 1 MHz) Cop 1.0 13 pF Gain Bandwidth Product (Vo, = 5V,I = 2 mA)* fr 200 MHz Typically a minimum of 50% of the distribution will have hy > 150 at stated conditions. Note: Polarities are absolute. *Registered Values 461