Specifications are subject to change without notice.
54
MARCH 1994 - REVISED OCTOBER 2000
TISP31xxF3 (MV) Overvoltage Protector Series
TISP3125F3, TISP3150F3, TISP3180F3
MEDIUM-VOLTAGE DUAL BIDIRECTIONAL THYRISTOR
OVERVOLTAGE PROTECTORS
Device Symbol
SL Package (Top View)
P Package (Top View)
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
Planar Passivated Junctions
Low Off-State Current <10 µA
Rated for International Surge Wave Shapes
These medium-voltage dual bidirectional thyristor protectors are
designed to protect ground backed ringing central office, access
and customer premise equipment against overvoltages caused
by lightning and a.c. power disturbances. Offered in three
voltage variants to meet battery and protection requirements,
they are guaranteed to suppress and withstand the listed
international lightning surges in both polarities. Overvoltages are
initially clipped by breakdown clamping until the voltage rises to
the breakover level, which causes the device to switch. The high
crowbar holding current prevents d.c. latchup as the current
subsides.
These monolithic protection devices are fabricated in
ion-implanted planar structures to ensure precise and matched
breakover control and are virtually transparent to the system in
normal operation.
How To Order
D Package (Top View)
Description
.............................................. UL Recognized Component
DEVICE V
DRM
V
V
(BO)
V
‘3125F3 100 125
‘3150F3 120 150
‘3180F3 145 180
Waveshape Standard ITSP
A
2/10 µs GR-1089-CORE 175
8/20 µs IEC 61000-4-5 120
10/160 µs FCC Part 68 60
10/700 µsITU-T K.20/21
FCC Part 68 50
10/560 µs FCC Part 68 45
10/1000 µs GR-1089-CORE 35
1
2
3
45
6
7
8G
G
G
G
NC
T
R
NC
NC - No internal connection
R
G
T
G
T
G
G
R
1
2
3
45
6
7
8
Specified T terminal ratings require connection of pins 1 and 8.
Specified R terminal ratings require connection of pins 4 and 5.
MD1XAB
1
2
3
T
G
R
G
TR
SD3XAA
Terminals T, R and G correspond to the
alternative line designators of A, B and C
Device Package Carrier Order As
TISP31xxF3
D, Small-outline Tape And Reeled TISP31xxF3DR
P, Plastic Dip Tube TISP31xxF3P
SL, Single-in-line Tube TISP31xxF3SL
Insert 1xx value corresponding to protection voltages of 125, 150 and 180
Specifications are subject to change without notice. 55
MARCH 1994 - REVISED OCTOBER 2000
Electrical Characteristics for R and T Terminal Pair, TA = 25 °C (Unless Otherwise Noted)
Rating Symbol Value Unit
Repetitive peak off-state voltage, 0 °C < T
A
< 70 °C‘3125F3
‘3150F3
‘3180F3
V
DRM
±100
±120
±145
V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
I
PPSM
A
1/2 (Gas tube differential transient, 1/2 voltage wave shape) 350
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape) 175
1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25 Ω resistor) 90
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape) 120
10/160 (FCC Part 68, 10/160 voltage wave shape) 60
4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous) 55
0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape) 38
5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single) 50
5/320 (FCC Part 68, 9/720 voltage wave shape, single) 50
10/560 (FCC Part 68, 10/560 voltage wave shape) 45
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape) 35
Non-repetitive peak on-state current, 0 °C < T
A
< 70 °C (see Notes 1 and 3)
50 Hz, 1 s D Package
P Package
SL Package
I
TSM
4.3
5.7
7.1
A
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A di
T
/dt 250 A/µs
Junction temperature T
J
-65 to +150 °C
Storage temperature range T
stg
-65 to +150 °C
NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section.
2. Initially, the TISP
®
must be in thermal equilibrium with 0 °C<T
J
<70 °C. The surge may be repeated after the TISP
®
returns to its
initial conditions.
3. Above 70 °C, derate linearly to zero at 150 °C lead temperature.
Parameter Test Conditions Min Typ Max Unit
I
DRM
Repetitive peak off-
state current V
D
=±2V
DRM
, 0 °C<T
A
<70°C±10 µA
I
D
Off-state current V
D
=±50 V ±10 µA
C
off
Off-state capacitance
f = 100 kHz, V
d
= 100 mV , V
D
=0,
Third terminal voltage = -50 V to +50 V
(see Notes 4 and 5)
D Package
P Package
SL Package
0.05
0.065
0.03
0.15
0.2
0.1
pF
NOTES: 4. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.
5. Further details on capacitance are given in the Applications Information section.
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
TISP31xxF3 (MV) Overvoltage Protector Series
Specifications are subject to change without notice.
56
MARCH 1994 - REVISED OCTOBER 2000
Electrical Characteristics for T and G or R and G Terminals, TA = 25 °C (Unless Otherwise Noted)
Parameter Test Conditions Min Typ Max Unit
I
DRM
Repetitive peak off-
state current V
D
=±V
DRM
, 0 °C<T
A
<70°C±10 µA
V
(BO)
Breakover voltage dv/dt = ±250 V/ms, R
SOURCE
= 300 Ω
‘3125F3
‘3150F3
‘3180F3
±125
±150
±180
V
V
(BO)
Impulse breakover
voltage
dv/dt ≤±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
R
SOURCE
=50Ω
‘3125F3
‘3150F3
‘3180F3
±139
±164
±194
V
I
(BO)
Breakover current dv/dt = ±250 V/ms, R
SOURCE
= 300 Ω±0.1 ±0.6 A
V
T
On-state voltage I
T
=±5A, t
W
= 100 µs±3V
I
H
Holding current I
T
=±5A, di/dt=-/+30mA/ms ±0.15 A
dv/dt Critical rate of rise of
off-state voltage Linear voltage ramp, Maximum ramp value < 0.85V
DRM
±5kV/µs
I
D
Off-state current V
D
=±50 V ±10 µA
C
off
Off-state capacitance
f=1MHz, V
d
=0.1V r.m.s., V
D
=0
f=1MHz, V
d
=0.1V r.m.s., V
D
=-5V
f=1MHz, V
d
=0.1V r.m.s., V
D
=-50V
(see Notes 5 and 6)
55
31
15
95
50
25 pF
NOTES: 6. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.
7. Further details on capacitance are given in the Applications Information section.
Thermal Characteristics
TISP31xxF3 (MV) Overvoltage Protector Series
Parameter Test Conditions Min Typ Max Unit
R
θJA
Junction to free air thermal resistance P
tot
=0.8W, T
A
= 25 °C
5cm
2
, FR4 PCB
D Package 160
°C/WP Package 100
SL Package 135
Specifications are subject to change without notice. 57
MARCH 1994 - REVISED OCTOBER 2000
Parameter Measurement Information
TISP31xxF3 (MV) Overvoltage Protector Series
Figure 1. Voltage-Current Characteristics for any Terminal Pair
-v
I
(BR)
V
(BR)
V
(BR)M
V
DRM
I
DRM
V
D
I
H
I
T
V
T
I
TSM
I
TSP
V(BO)
I
(BO)
I
D
Quadrant I
Switching
Characteristic
+v
+i
V(BO)
I
(BO)
I
(BR)
V
(BR)
V
(BR)M
V
DRM
I
DRM
V
D
I
D
I
H
I
T
V
T
I
TSM
I
TSP
-i
Quadrant III
Switching
Characteristic
PMXXAA
Specifications are subject to change without notice.
58
MARCH 1994 - REVISED OCTOBER 2000
Typical Characteristics - R and G or T and G Terminals
Figure 2. Figure 3.
Figure 4. Figure 5.
T
J
- Junction Temperature - °C
-25 0 25 50 75 100 125 150
I
D
- Off-State Current - A
0·001
0·01
0·1
1
10
100
TC3MAF
V
D
= -50 V
V
D
= 50 V
T
J
- Junction Temperature - °C
-25 0 25 50 75 100 125 150
Normalized Breakdown Voltages
0.9
1.0
1.1
1.2
TC3MAI
V
(BO)
V
(BR)
V
(BR)M
Positive Polarity
Normalized to V
(BR)
I
(BR)
= 100 µA and 25 °C
T
J
- Junction Temperature - °C
-25 0 25 50 75 100 125 150
Normalized Breakdown Voltages
0.9
1.0
1.1
1.2
TC3MAJ
V
(BO)
V
(BR)
V
(BR)M
Negative Polarity
Normalized to V
(BR)
I
(BR)
= 100 µA and 25 °C
V
T
- On-State Voltage - V
23456789110
I
T
- On-State Current - A
1
10
100
TC3MAL
-40 °C
150 °C
25 °C
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
NORMALIZED BREAKDOWN VOLTAGES
vs
JUNCTION TEMPERATURE
NORMALIZED BREAKDOWN VOLTAGES
vs
JUNCTION TEMPERATURE
TISP31xxF3 (MV) Overvoltage Protector Series
Specifications are subject to change without notice. 59
MARCH 1994 - REVISED OCTOBER 2000
Figure 6. Figure 7.
Figure 8. Figure 9.
T
J
- Junction Temperature - °C
-25 0 25 50 75 100 125 150
I
H
, I
(BO)
- Holding Current, Breakover Current - A
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.1
1.0
TC3MAH
I
(BO)
I
H
di/dt - Rate of Rise of Principle Current - A/µs
0·001 0·01 0·11 10100
Normalized Breakover Voltage
1.0
1.1
1.2
1.3
TC3MAB
Positive
Negative
Terminal Voltage - V
0·11 10
Off-State Capacitance - pF
10
100
TC3MAE
50
Positive Bias
Negative Bias
T
J
- Junction Temperature - °C
-25 0 25 50 75 100 125 150
Off-State Capacitance - pF
10
100
TC3MAD
500
Terminal Bias = 0
Terminal Bias = 50 V
Terminal Bias = -50 V
HOLDING CURRENT & BREAKOVER CURRENT
vs
JUNCTION TEMPERATURE
OFF-STATE CAPACITANCE
vs
TERMINAL VOLTAGE
OFF-STATE CAPACITANCE
vs
JUNCTION TEMPERATURE
NORMALIZED BREAKOVER VOLTAGE
vs
RATE OF RISE OF PRINCIPLE CURRENT
TISP31xxF3 (MV) Overvoltage Protector Series
Typical Characteristics - R and G or T and G Terminals
Specifications are subject to change without notice.
60
MARCH 1994 - REVISED OCTOBER 2000
Typical Characteristics - R and G or T and G Terminals
TISP31xxF3 (MV) Overvoltage Protector Series
Figure 10.
Decay Time - µs
10 100 1000
Maximum Surge Current - A
10
100
1000 TC3MAA
2
SURGE CURRENT
vs
DECAY TIME
Specifications are subject to change without notice. 61
MARCH 1994 - REVISED OCTOBER 2000
Figure 11. Figure 12.
Figure 13. Figure 14.
T
J
- Junction Temperature - °C
-25 0 25 50 75 100 125 150
I
D
- Off-State Current - A
0·001
0·01
0·1
1
10
100 TC3MAG
V
D
= ±50 V
T
J
- Junction Temperature - °C
-25 0 25 50 75 100 125 150
Normalized Breakdown Voltages
0.9
1.0
1.1
1.2
TC3MAK
V
(BO)
V
(BR)
V
(BR)M
Both Polarities
Normalized to V
(BR)
I
(BR)
= 100 µA and 25 °C
di/dt - Rate of Rise of Principle Current - A/µs
0·001 0·01 0·11 10100
Normalized Breakover Voltage
1.0
1.1
1.2
1.3 TC3MAC
Terminal Voltage - V
0·11 10
Off-State Capacitance -pF
20
30
40
50
60
70
80
90
10
100
TC3XAA
50
D Package
P Package
SL Package
Both Voltage Polarities
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
OFF-STATE CAPACITANCE
vs
TERMINAL VOLTAGE
NORMALIZED BREAKDOWN VOLTAGES
vs
JUNCTION TEMPERATURE
NORMALIZED BREAKOVER VOLTAGE
vs
RATE OF RISE OF PRINCIPLE CURRENT
TISP31xxF3 (LV) Overvoltage Protector Series
Typical Characteristics - R and T Terminals
Specifications are subject to change without notice.
62
MARCH 1994 - REVISED OCTOBER 2000
Thermal Information
Figure 15. Figure 16.
t - Current Duration - s
0·1 1 10 100 1000
ITRMS - Maximum Non-Recurrent 50 Hz Current - A
1
10
D Package
SL Package
TI3MAB
P Package
VGEN = 250 Vrms
RGEN = 10 to 150 Ω
t - Power Pulse Duration - s
0·0001 0·001 0·01 0·1 1 10 100 1000
ZθJA - Transient Thermal Impedance - °C/W
1
10
100
D Package
P Package
SL Package
TI3MAA
MAXIMUM NON-RECURRING 50 Hz CURRENT
vs
CURRENT DURATION THERMAL RESPONSE
TISP31xxF3 (LV) Overvoltage Protector Series
Specifications are subject to change without notice. 63
MARCH 1994 - REVISED OCTOBER 2000
Electrical Characteristics
Lightning Surge
Wave Shape Notation
Generators
Current Rating
APPLICATIONS INFORMATION
TISP31xxF3 (MV) Overvoltage Protector Series
Standard Open Circuit Voltage Short Circuit Current
ITU-T K.21 1.5 kV, 10/700 µs 37.5 A, 5/310 µs
ITU-T K.20 1 kV, 10/700 µs 25 A, 5/310 µs
IEC 61000-4-5, combination wave generator 1.0 kV, 1.2/50 µs 500 A, 8/20 µs
Telcordia GR-1089-CORE 1.0 kV, 10/1000 µs 100 A, 10/1000 µs
Telcordia GR-1089-CORE 2.5 kV, 2/10 µs 500 A, 2/10 µs
FCC Part 68, Type A 1.5 kV, <10/>160 µs 200 A,<10/>160 µs
FCC Part 68, Type A 800 V, <10/>560 µs 100 A,<10/>160 µs
FCC Part 68, Type B 1.5 kV, 9/720 µs 37.5 A, 5/320 µs
The electrical characteristics of a TISP® device are strongly dependent on junction temperature, TJ. Hence, a characteristic value will depend
on the junction temperature at the instant of measurement. The values given in this data sheet were measured on commercial testers, which
generally minimize the temperature rise caused by testing. Application values may be calculated from the parameters’ temperature coefficient,
the power dissipated and the thermal response curve, Zθ (see M. J. Maytum, “Transient Suppressor Dynamic Parameters.” TI Technical
Journal, vol. 6, No. 4, pp.63-70, July-August 1989).
Most lightning tests, used for equipment verification, specify a unidirectional sawtooth waveform which has an exponential rise and an
exponential decay. Wave shapes are classified in terms of peak amplitude (voltage or current), rise time and a decay time to 50% of the
maximum amplitude. The notation used for the wave shape is amplitude, rise time/decay time. A 50 A, 5/310 µs wave shape would have a
peak current value of 50 A, a rise time of 5 µs and a decay time of 310 µs. The TISP® surge current graph comprehends the wave shapes of
commonly used surges.
There are three categories of surge generator type, single wave shape, combination wave shape and circuit defined. Single wave shape
generators have essentially the same wave shape for the open circuit voltage and short circuit current (e.g. 10/1000 µs open circuit voltage
and short circuit current). Combination generators have two wave shapes, one for the open circuit voltage and the other for the short circuit
current (e.g. 1.2/50 µs open circuit voltage and 8/20 µs short circuit current). Circuit specified generators usually equate to a combination
generator, although typically only the open circuit voltage waveshape is referenced (e.g. a 10/700 µs open circuit voltage generator typically
produces a 5/310 µs short circuit current). If the combination or circuit defined generators operate into a finite resistance, the wave shape
produced is intermediate between the open circuit and short circuit values.
When the TISP® device switches into the on-state it has a very low impedance. As a result, although the surge wave shape may be defined in
terms of open circuit voltage, it is the current wave shape that must be used to assess the required TISP® surge capability. As an example, the
ITU-T K.21 1.5 kV, 10/700 µs open circuit voltage surge is changed to a 38 A, 5/310 µs current waveshape when driving into a short circuit.
Thus, the TISP® surge current capability, when directly connected to the generator, will be found for the ITU-T K.21 waveform at 310 µs on the
surge graph and not 700 µs. Some common short circuit equivalents are tabulated below:
Any series resistance in the protected equipment will reduce the peak circuit current to less than the generators’ short circuit value. A 1 kV
open circuit voltage, 100 A short circuit current generator has an effective output impedance of 10 Ω (1000/100). If the equipment has a series
resistance of 25 Ω, then the surge current requirement of the TISP® device becomes 29 A (1000/35) and not 100 A.
Specifications are subject to change without notice.
64
MARCH 1994 - REVISED OCTOBER 2000
Off-state Capacitance
The protection voltage, (V(BO) ), increases under lightning surge conditions due to thyristor regeneration. This increase is dependent on the
rate of current rise, di/dt, when the TISP® device is clamping the voltage in its breakdown region. The V(BO) value under surge conditions can
be estimated by multiplying the 50 Hz rate V(BO) (250 V/ms) value by the normalized increase at the surge’s di/dt (Figure 7 ). An estimate of the
di/dt can be made from the surge generator voltage rate of rise, dv/dt, and the circuit resistance.
As an example, the ITU-T K.21 1.5 kV, 10/700 µs surge has an average dv/dt of 150 V/µs, but, as the rise is exponential, the initial dv/dt is
higher, being in the region of 450 V/µs. The instantaneous generator output resistance is 25 Ω. If the equipment has an additional series
resistance of 20 Ω, the total series resistance becomes 45 Ω. The maximum di/dt then can be estimated as 450/45 = 10 A/µs. In practice, the
measured di/dt and protection voltage increase will be lower due to inductive effects and the finite slope resistance of the TISP® breakdown
region.
Capacitance
Protection Voltage
TISP31xxF3 (MV) Overvoltage Protector Series
Figure 17.
Vd - RMS AC Test Voltage - mV
1 10 100 1000
Normalized Capacitance
0.70
0.75
0.80
0.85
0.90
0.95
1.00
1.05 AIXXAA
Normalized to Vd = 100 mV
DC Bias, VD = 0
NORMALIZED CAPACITANCE
vs
RMS AC TEST VOLTAGE
The off-state capacitance of a TISP® device is sensitive to junction temperature, TJ, and the bias voltage, comprising of the d.c. voltage, VD,
and the a.c. voltage, Vd. All the capacitance values in this data sheet are measured with an a.c. voltage of 100 mV. The typical 25 °C variation
of capacitance value with a.c. bias is shown in Figure 17. When VD >> Vd, the capacitance value is independent on the value of Vd. The
capacitance is essentially constant over the range of normal telecommunication frequencies.
APPLICATIONS INFORMATION
Specifications are subject to change without notice. 65
MARCH 1994 - REVISED OCTOBER 2000
APPLICATIONS INFORMATION
TISP31xxF3 (MV) Overvoltage Protector Series
Longitudinal Balance
Figure 18 shows a three terminal TISP® device with its equivalent “delta” capacitance. Each capacitance, CTG, CRG and CTR, is the true
terminal pair capacitance measured with a three terminal or guarded capacitance bridge. If wire R is biased at a larger potential than wire T,
then CTG>CRG. Capacitance CTG is equivalent to a capacitance of CRG in parallel with the capacitive difference of (CTG -CRG). The line
capacitive unbalance is due to (CTG -CRG ) and the capacitance shunting the line is CTR +CRG/2.
All capacitance measurements in this data sheet are three terminal guarded to allow the designer to accurately assess capacitive unbalance
effects. Simple two terminal capacitance meters (unguarded third terminal) give false readings as the shunt capacitance via the third terminal is
included.
Figure 18.
CTG
CRG
CTR
Equipment
T
R
G
(CTG-CRG)
CRG
CTR
Equipment
T
R
G
CRG
CTG > CRG Equivalent Unbalance
AIXXAB
Specifications are subject to change without notice.
66
MARCH 1994 - REVISED OCTOBER 2000
MECHANICAL DATA
TISP31xxF3 (MV) Overvoltage Protector Series
D008 Plastic Small-outline Package
NOTES: A. Leads are within 0.25 (0.010) radius of true position at maximum material condition.
B. Body dimensions do not include mold flash or protrusion.
C. Mold flash or protrusion shall not exceed 0.15 (0.006).
D. Lead tips to be planar within ±0.051 (0.002).
D008
8765
4
3
2
1
8-pin Small Outline Microelectronic Standard
Package MS-012, JEDEC Publication 95
MDXXAAC
INDEX
4.80 - 5.00
(0.189 - 0.197)
5.80 - 6.20
(0.228 - 0.244)
3.81 - 4.00
(0.150 - 0.157)
1.35 - 1.75
(0.053 - 0.069)
0.102 - 0.203
(0.004 - 0.008)
0.28 - 0.79
(0.011 - 0.031)
0.51 - 1.12
(0.020 - 0.044)
4.60 - 5.21
(0.181 - 0.205)
0.36 - 0.51
(0.014 - 0.020)
0.25 - 0.50
(0.010 - 0.020)
0.190 - 0.229
(0.0075 - 0.0090)
Pin Spacing
1.27
(0.050)
(see Note A)
6 places
x 45 ° N0M
8 Places
7 ° NOM
4 Places
7 ° NOM
3 Places
4 ° ± 4 °
DIMENSIONS ARE: METRIC
(INCHES)
This small-outline package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will
withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high
humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
Specifications are subject to change without notice. 67
MARCH 1994 - REVISED OCTOBER 2000
MECHANICAL DATA
TISP31xxF3 (MV) Overvoltage Protector Series
D008 Tape DImensions
0.8
(0.03)
1.50
(.059)
3.90 - 4.10
(.154 - .161)
5.40 - 5.60
(.213 - .220)
1.95 - 2.05
(.077 - .081)
7.90 - 8.10
(.311 - .319)
6.30 - 6.50
(.248 - .256)
11.70 - 12.30
(.461 - .484)
D008 Package (8-pin Small Outline) Single-Sprocket Tape
Direction of Feed
ø MIN.
Carrier Tape
Embossment
Cover
Tape
NOTES: A. Taped devices are supplied on a reel of the following dimensions:-
Reel diameter:
Reel hub diameter:
Reel axial hole:
B. 2500 devices are on a reel.
MDXXATB
DIMENSIONS ARE: METRIC
(INCHES)
330 +0.0/-4.0
(12.992 +0.0/-.157)
100 ± 2.0
(3.937 ± .079)
13.0 ± 0.2
(.512 ± .008)
0 MIN.
MIN.
0.40
(0.016)
2.0 - 2.2
(.079 - .087)
1.50 - 1.60
(.059 - .063)
Specifications are subject to change without notice.
68
MARCH 1994 - REVISED OCTOBER 2000
MECHANICAL DATA
TISP31xxF3 (MV) Overvoltage Protector Series
D008 Plastic Dual-in-Line Package
This dual-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will
withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high
humidity conditions. The package is intended for insertion in mounting-hole rows on 7.62 (0.300) centers. Once the leads are compressed and
inserted, sufficient tension is provided to secure the package in the board during soldering. Leads require no additional cleaning or processing
when used in soldered assembly.
P008
312 4
8765
Seating
Plane
NOTES: A. Each pin centerline is located within 0.25 (0.010) of its true longitudinal position.
B. Dimensions fall within JEDEC MS001 - R-PDIP-T, 0.300" Dual-In-Line Plastic Family.
MDXXCF
Index
Notch
9.25 - 9.75
(0.364 - 0.384)
6.10 - 6.60
(0.240 - 0.260)
5.08
(0.200)
1.78
(0.070) MAX.
4 Places
8 Places
MAX.
3.17
(0.125) MIN.
0.51
(0.020) MIN.
2.54
(0.100) Typical
(see Note A)
6 Places
0.38 - 0.53
(0.015 - 0.021)
7.62 - 8.23
(0.300 - 0.324)
8.38 - 9.40
(0.330 - 0.370)
0.20 - 0.36
(0.008 - 0.014)
DIMENSIONS ARE: METRIC
(INCHES)
Specifications are subject to change without notice. 69
MARCH 1994 - REVISED OCTOBER 2000
MECHANICAL DATA
TISP31xxF3 (MV) Overvoltage Protector Series
SL003 3-pin Plastic Single-In-Line Package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will
withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high
humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
SL003
2
1 3
NOTES: A. Each pin centerline is located within 0.25 (0.010) of its true longitudinal position.
B. Body molding flash of up to 0.15 (0.006) may occur in the package lead plane.
MDXXCE
Index
Notch
9.25 - 9.75
(0.364 - 0.384)
3.20 - 3.40
(0.126 - 0.134)
6.10 - 6.60
(0.240 - 0.260)
0.203 - 0.356
(0.008- 0.014)
0.559 - 0.711
(0.022 - 0.028)
3 Places
12.9
(0.492)
DIMENSIONS ARE: METRIC
(INCHES)
4.267
(0.168)
MIN.
MAX.
1.854
(0.073)
MAX.
8.31
(0.327)
MAX.
2.54
(0.100) Typical
(See Note A)
2 Places
Mouser Electronics
Authorized Distributor
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TISP3180F3DR TISP3150F3P TISP3125F3P-S TISP3180F3D-S TISP3180F3P-S TISP3150F3DR TISP3180F3SL
TISP3125F3DR TISP3125F3P TISP3150F3SL TISP3125F3SL TISP3180F3D TISP3180F3P TISP3125F3SL-S
TISP3180F3SL-S TISP3150F3SL-S TISP3180F3DR-S TISP3125F3DR-S TISP3150F3DR-S TISP3150F3P-S
