APT20GF120BRD APT20GF120SRD 1200V 32A Fast IGBT & FRED TO-247 The Fast IGBTTM is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBTTM combined with an APT freewheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. D3PAK G C C E G E * Low Forward Voltage Drop * High Freq. Switching to 20KHz * Low Tail Current * Ultra Low Leakage Current * RBSOA and SCSOA Rated * Ultrafast Soft Recovery Antiparallel Diode C G E MAXIMUM RATINGS (IGBT) Symbol All Ratings: TC = 25C unless otherwise specified. APT20GF120BRD/SRD Parameter VCES Collector-Emitter Voltage 1200 VCGR Collector-Gate Voltage (RGE = 20K) 1200 VGE Gate-Emitter Voltage 20 I C1 Continuous Collector Current I C2 Continuous Collector Current @ TC = 105C I CM Pulsed Collector Current I LM RBSOA Clamped Inductive Load Current @ Rg = 11 TC = 125C 40 PD Total Power Dissipation 200 TJ,TSTG TL 1 3 UNIT Volts 32 @ TC = 25C 20 @ TC = 90C Amps 64 Operating and Storage Junction Temperature Range Watts -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. C 300 STATIC ELECTRICAL CHARACTERISTICS (IGBT) VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES MIN TYP MAX 4.5 5.5 6.5 Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 25C) 2.7 3.2 Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 125C) 3.3 3.9 (VCE = VGE, I C = 600A, Tj = 25C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25C) 1 Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125C) 6 Gate-Emitter Leakage Current (VGE = 20V, VCE = 0V) 100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT Volts mA 4-2003 Characteristic / Test Conditions nA 052-6252 Rev C Symbol DYNAMIC CHARACTERISTICS (IGBT) Symbol Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge td(on) tr td(off) tf td(on) tr td(off) tf APT20GF120BRD/SRD 2 Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time MIN TYP MAX 1050 1210 100 150 f = 1 MHz 63 110 Gate Charge VGE = 15V 95 140 13 20 I C = I C2 62 90 Resistive Switching (25C) 15 30 VGE = 15V 67 130 92 140 93 190 17 34 30 60 105 160 71 140 Capacitance VGE = 0V VCE = 25V VCC = 0.5VCES VCC = 0.8VCES I C = I C2 RG = 10 Turn-on Delay Time Rise Time Turn-off Delay Time Inductive Switching (150C) VCLAMP(Peak) = 0.66VCES VGE = 15V Fall Time I C = I C2 Turn-on Switching Energy R G = 10 1.3 3 Eoff Turn-off Switching Energy TJ = +150C 1.5 3 Ets Total Switching Losses 2.7 5 17 30 35 70 93 140 Eon td(on) tr td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Inductive Switching (25C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 Fall Time R G = 10 70 140 Ets Total Switching Losses TJ = +25C 2.4 5 gfe Forward Transconductance VCE = 20V, I C = 15A 12 tf UNIT pF nC ns ns mJ ns mJ S THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED) Symbol RJC RJA 052-6252 Rev C 4-2003 WT Torque Characteristic MIN TYP MAX Junction to Case (IGBT) 0.63 Junction to Case (FRED) 0.90 C/W 40 Junction to Ambient Package Weight UNIT 0.22 oz 6.1 gm 10 lb*in 1.1 N*m Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 See MIL-STD-750 Method 3471 3 Switching losses include the FRED and IGBT. APT Reserves the right to change, without notice, the specifications and information contained herein. APT20GF120BRD/SRD 50 VGE=17 & 15V 13V 40 30 11V 20 10 9V IC, COLLECTOR CURRENT (AMPERES) IC, COLLECTOR CURRENT (AMPERES) 50 30 11V 20 10 9V 7V 0 4 8 12 16 20 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 2, Typical Output Characteristics (TJ = 150C) 60 100 0 250Sec. Pulse Test VGE = 15V 40 IC, COLLECTOR CURRENT (AMPERES) IC, COLLECTOR CURRENT (AMPERES) 13V 40 7V 0 4 8 12 16 20 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 1, Typical Output Characteristics (TJ = 25C) 0 TC=-55C TC=+25C 30 TC=+150C 20 10 OPERATION LIMITED BY VCE (SAT) 50 100s 10 5 1ms TC =+25C TJ =+150C SINGLE PULSE 1 0 2,000 1,000 Cies 500 f = 1MHz Coes 100 Cres 50 10 0.01 0.1 1.0 10 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage 10ms 1 5 10 50 100 1200 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 4, Maximum Forward Safe Operating Area VGE, GATE-TO-EMITTER VOLTAGE (VOLTS) 0 2 4 6 8 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 3, Typical Output Characteristics @ VGE = 15V C, CAPACITANCE (pF) VGE=17 & 15V 20 IC = IC2 TJ = +25C 16 VCE=240V 12 VCE=600V 8 4 0 0 40 80 120 160 Qg, TOTAL GATE CHARGE (nC) Figure 6, Gate Charges vs Gate-To-Emitter Voltage 0.5 D=0.5 0.2 0.05 0.05 Note: 0.02 0.01 0.01 t1 t2 0.005 SINGLE PULSE 0.001 -5 10 4-2003 0.1 10-4 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10 052-6252 Rev C 0.1 PDM ZJC, THERMAL IMPEDANCE (C/W) 1.0 APT20GF120BRD/SRD 40 IC, COLLECTOR CURRENT (AMPERES) VCE(SAT), COLLECTOR-TO-EMITTER SATURATION VOLTAGE (VOLTS) 5.0 4.0 IC1 2.0 IC2 1.5 0.5 IC2 10 50 75 100 125 150 TC, CASE TEMPERATURE (C) Figure 9, Maximum Collector Current vs Case Temperature 1.2 25 5.0 1.1 1 Graph not Applicable 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 10, Breakdown Voltage vs Junction Temperature VCC = 0.66 VCES VGE = +15V TJ = +25C IC = IC2 4.0 Eoff 3.0 2.0 Eon 1.0 0 20 40 60 80 100 RG, GATE RESISTANCE (OHMS) Figure 11, Typical Switching Energy Losses vs Gate Resistance 10 0 1.6 SWITCHING ENERGY LOSSES (mJ) TOTAL SWITCHING ENERGY LOSSES (mJ) 20 0 SWITCHING ENERGY LOSSES (mJ) BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED) 1.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 8, Typical VCE(SAT) Voltage vs Junction Temperature 30 IC1 IC2 1 0.5 IC2 VCC = 0.66 VCES VGE = +15V RG = 10 0.1 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 12, Typical Switching Energy Losses vs. Junction Temperature VCC = 0.66 VCES VGE = +15V TJ = +125C RG = 10 1.2 Eoff 0.8 Eon 0.4 0 0 4 8 12 16 20 IC, COLLECTOR CURRENT (AMPERES) Figure 13, Typical Switching Energy Losses vs Collector Current IC, COLLECTOR CURRENT (AMPERES) 052-6252 Rev C 4-2003 100 For Both: Duty Cycle = 50% TJ = +125C Tsink = +90C Gate drive as specified Power dissapation = 56W ILOAD = IRMS of fundamental 10 1 0.1 1.0 10 F, FREQUENCY (KHz) Figure 14,Typical Load Current vs Frequency 100 1000 20GF120BRD/SRD VCHARGE *DRIVER SAME TYPE AS D.U.T. VCC = 0.66 VCES Et s = E on + E off A A 90% VC B 10% B t d (on) VC IC t d(off) IC 100uH 90% D.U.T. VCE (SAT) tr VC A D.U.T. DRIVER* 10% IC RG V CLAMP 90% 10% tf E on t=2us E off Figure 15, Switching Loss Test Circuit and Waveforms 2 VCE(off) VGE(on) V CC 90% .5 VCES RL = I C2 2 D.U.T. 10% 1 From Gate Drive Circuitry VCE(on) VGE(off) t d (on) tr t d(off) RG 1 tf Figure 16, Resistive Switching Time Test Circuit and Waveforms ULTRAFAST SOFT RECOVERY PARALLEL DIODE IFAV IFRMS IFSM Symbol 20GF120BRD/SRD Characteristic Maximum Average Forward Current (TC = 100C, Duty Cycle = 0.5) 30 RMS Forward Current 70 MIN TYP Maximum Forward Voltage IF = 60A 2.0 Series Inductance (Lead to Lead 5mm from Base) UNIT Volts 1.7 IF = 20A, TJ = 150C LS MAX 2.3 IF = 20A VF Amps 210 Non-Repetive Forward Surge Current (TJ = 45C, 8.3 ms) Characteristic / Test Conditions UNIT 10 nH 4-2003 Symbol All Ratings: TC = 25C unless otherwise specified. 052-6252 Rev C MAXIMUM RATINGS (FRED) 20GF120BRD/SRD DYNAMIC CHARACTERISTICS (FRED) Symbol Characteristic/ Test Conditions MIN TYP MAX 85 trr1 Reverse Recovery Time, IF = 1.0A, diF /dt = -15A/S, VR = 30V, TJ = 25C 70 trr2 Reverse Recovery Time TJ = 25C 70 trr3 IF = 20A, diF /dt = -240A/S, VR = 650V TJ = 100C 160 tfr1 Forward Recovery Time TJ = 25C 255 tfr2 IF = 20A, diF /dt = 240A/S, VR = 650V TJ = 100C 255 IRRM1 Reverse Recovery Current TJ = 25C 7 12 IRRM2 IF = 20A, diF /dt = -240A/S, VR = 650V TJ = 100C 12 20 Qrr1 Recovery Charge TJ = 25C 660 Qrr2 IF = 20A, diF /dt = -240A/S, VR = 650V TJ = 100C 1640 Vfr1 Forward Recovery Voltage TJ = 25C 15 Vfr2 IF = 20A, diF /dt = 240A/S, VR = 650V TJ = 100C 20 Rate of Fall of Recovery Current TJ = 25C 245 IF = 20A, diF /dt = -240A/S, VR = 650V (See Figure 18) TJ = 100C 160 diM/dt UNIT nS Amps nC Volts A/S Vr D.U.T. trr/Qrr Waveform 30H PEARSON 411 CURRENT TRANSFORMER +15v diF /dt Adjust 0v -15v Figure 17, Diode Reverse Recovery Test Circuit and Waveforms 1 IF - Forward Conduction Current 2 diF /dt - Current Slew Rate, Rate of Forward Current Change Through Zero Crossing. 3 IRRM - Peak Reverse Recovery Current. 4 trr - Reverse Recovery Time Measured from Point of IF Current Falling Through Zero to a Tangent Line { 6 diM/dt} Extrapolated Through Zero Defined by 0.75 and 0.50 IRRM. 1 4 6 052-6252 Rev C 4-2003 Zero 5 3 0.5 IRRM 0.75 IRRM 2 5 Qrr - Area Under the Curve Defined by IRRM and trr. 6 diM/dt - Maximum Rate of Current Change During the Trailing Portion of trr. Figure 18, Diode Reverse Recovery Waveform and Definitions Qrr = 1/2 (trr . IRRM) 20GF120BRD/SRD 2400 80 60 TJ = 25C 20 TJ = 100C TJ = -55C 0 0 1 2 3 4 VF, ANODE-TO-CATHODE VOLTAGE (VOLTS) Figure 19, Forward Voltage Drop vs Forward Current 2000 60A 1600 30A 1200 800 10 50 100 500 1000 diF /dt, CURRENT SLEW RATE (AMPERES/SEC) Figure 20, Reverse Recovery Charge vs Current Slew Rate 2.0 TJ = 100C VR = 650V 30A 30 15A 20 10 Kf, DYNAMIC PARAMETERS (NORMALIZED) 60A 40 0 0 200 400 600 800 1000 diF /dt, CURRENT SLEW RATE (AMPERES/SEC) Figure 21, Reverse Recovery Current vs Current Slew Rate 1.6 Qrr trr 1.2 IRRM 0.8 trr Qrr 0.4 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 22, Dynamic Parameters vs Junction Temperature 250 2000 60A 30A 150 15A 100 50 0 0 200 400 600 800 1000 diF /dt, CURRENT SLEW RATE (AMPERES/SEC) Figure 23, Reverse Recovery Time vs Current Slew Rate tfr, FORWARD RECOVERY TIME (nano-SECONDS) 200 100 TJ = 100C VR = 650V IF = 30A TJ = 100C VR = 650V trr, REVERSE RECOVERY TIME (nano-SECONDS) 15A 400 0 50 IRRM, REVERSE RECOVERY CURRENT (AMPERES) TJ = 100C VR = 650V 1600 80 Vfr 1200 60 800 40 400 20 tfr Vfr, FORWARD RECOVERY VOLTAGE (VOLTS) 40 TJ = 150C Qrr, REVERSE RECOVERY CHARGE (nano-COULOMBS) IF, FORWARD CURRENT (AMPERES) 100 0 0 200 400 600 800 1000 diF /dt, CURRENT SLEW RATE (AMPERES/SEC) Figure 24, Forward Recovery Voltage/Time vs Current Slew Rate 0 1.0 D=0.5 0.2 0.1 0.1 0.05 0.05 SINGLE PULSE t1 t2 0.005 DUTY FACTOR D = t1 / t2 PEAK TJ =PDM x Z JC + TC 0.001 -5 10 10-4 10-3 10-2 10-1 1.0 VR, REVERSE VOLTAGE (VOLTS) RECTANGULAR PULSE DURATION (SECONDS) Figure 25, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10 052-6252 Rev C 0.01 0.01 4-2003 NOTE: 0.02 PDM ZJC, THERMAL IMPEDANCE (C/W) 052-6252 Rev A 0.5 20GF120BRD/SRD 3 TO-247 Package Outline 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC Collector (Cathode) 20.80 (.819) 21.46 (.845) 4-2003 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 3.55 (.138) 3.81 (.150) 4.50 (.177) Max. 052-6252 Rev C 5.38 (.212) 6.20 (.244) Collector (Cathode) (Heat Sink) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) D PAK Package Outline 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Revised 4/3/2003 2.87 (.113) 3.12 (.123) 0.46 (.018) 0.56 (.022) {3 Plcs} 1.65 (.065) 2.13 (.084) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) Gate Collector (Cathode) Emitter (Anode) 1.04 (.041) 1.15 (.045) 13.41 (.528) 13.51 (.532) 13.79 (.543) 13.99 (.551) 1.27 (.050) 1.40 (.055) 1.22 (.048) 1.32 (.052) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.} Revised 4/3/2003 11.51 (.453) 11.61 (.457) 3.81 (.150) 4.06 (.160) (Base of Lead) Heat Sink (Collector) and Leads (Cathode) are Plated Emitter (Anode) Collector (Cathode) Gate Dimensions in Millimeters (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.