D3PAK
GCE
MIN TYP MAX
4.5 5.5 6.5
2.7 3.2
3.3 3.9
1
6
±100
Characteristic / Test Conditions
Gate Threshold Voltage (VCE = VGE, IC = 600µA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 125°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
UNIT
Volts
mA
nA
Symbol
VGE(TH)
VCE(ON)
ICES
IGES
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (RGE = 20KΩ)
Gate-Emitter Voltage
Continuous Collector Current 3 @ TC = 25°C
Continuous Collector Current @ TC = 105°C
Pulsed Collector Current 1 @ TC = 90°C
RBSOA Clamped Inductive Load Current @ Rg = 11Ω TC = 125°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
TO-247
GCE
G
C
E
APT20GF120BRD
APT20GF120SRD
1200V 32A
The Fast IGBT™ is a new generation of high voltage power IGBTs. Using Non-
Punch Through Technology the Fast IGBT™ combined with an APT free-
wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness
and fast switching speed.
• Low Forward Voltage Drop • High Freq. Switching to 20KHz
• Low Tail Current • Ultra Low Leakage Current
• RBSOA and SCSOA Rated
• Ultrafast Soft Recovery Antiparallel Diode
Fast IGBT & FRED
MAXIMUM RATINGS (IGBT) All Ratings: TC = 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS (IGBT)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
052-6252 Rev C 4-2003
Symbol
VCES
VCGR
VGE
IC1
IC2
ICM
ILM
PD
TJ,TSTG
TL
APT20GF120BRD/SRD
1200
1200
±20
32
20
64
40
200
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
gfe
DYNAMIC CHARACTERISTICS (IGBT) APT20GF120BRD/SRD
UNIT
°C/W
oz
gm
lb•in
N•m
MIN TYP MAX
0.63
0.90
40
0.22
6.1
10
1.1
Characteristic
Junction to Case (IGBT)
Junction to Case (FRED)
Junction to Ambient
Package Weight
Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw
Symbol
RΘJC
RΘJA
WT
Torque
THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)
Test Conditions
Capacitance
VGE = 0V
VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCC = 0.5VCES
IC = IC2
Resistive Switching (25°C)
VGE = 15V
VCC = 0.8VCES
IC = IC2
RG = 10Ω
Inductive Switching (150°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = IC2
RG = 10Ω
TJ = +150°C
Inductive Switching (25°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = IC2
RG = 10Ω
TJ = +25°C
VCE = 20V, IC = 15A
MIN TYP MAX
1050 1210
100 150
63 110
95 140
13 20
62 90
15 30
67 130
92 140
93 190
17 34
30 60
105 160
71 140
1.3 3
1.5 3
2.7 5
17 30
35 70
93 140
70 140
2.4 5
12
UNIT
pF
nC
ns
ns
mJ
ns
mJ
S
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 2
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
Forward Transconductance
1Repetitive Rating: Pulse width limited by maximum junction temperature.
2See MIL-STD-750 Method 3471
3Switching losses include the FRED and IGBT.
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6252 Rev C 4-2003
052-6252 Rev C 4-2003
APT20GF120BRD/SRD
C, CAPACITANCE (pF) IC, COLLECTOR CURRENT (AMPERES) IC, COLLECTOR CURRENT (AMPERES)
VGE, GATE-TO-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (AMPERES) IC, COLLECTOR CURRENT (AMPERES)
TC =+25°C
TJ =+150°C
SINGLE PULSE
250µSec. Pulse Test
VGE = 15V
IC = IC2
TJ = +25°C
f = 1MHz
9V
11V
9V
Cies
Cres
13V
7V
13V
11V
7V
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
PDM
0.05
D=0.5
0.2
0.02
0.01
SINGLE PULSE
Coes
VGE=17 & 15V
ZθJC, THERMAL IMPEDANCE (°C/W)
VGE=17 & 15V
TC=-55°C
TC=+25°C
TC=+150°C
0.1
OPERATION
LIMITED
BY
VCE (SAT)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 1, Typical Output Characteristics (TJ = 25°C) Figure 2, Typical Output Characteristics (TJ = 150°C)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 3, Typical Output Characteristics @ VGE = 15V Figure 4, Maximum Forward Safe Operating Area
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC)
Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage Figure 6, Gate Charges vs Gate-To-Emitter Voltage
RECTANGULAR PULSE DURATION (SECONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
50
40
30
20
10
0
100
50
10
5
1
20
16
12
8
4
0
50
40
30
20
10
0
60
40
30
20
10
0
2,000
1,000
500
100
50
10
1.0
0.5
0.1
0.05
0.01
0.005
0.001
VCE=240V
VCE=600V
0 4 8 12 16 20 0 4 8 12 16 20
0 2 4 6 8 1 5 10 50 100 1200
0.01 0.1 1.0 10 50 0 40 80 120 160
10-5 10-4 10-3 10-2 10-1 1.0 10
100µs
1ms
10ms
052-6252 Rev C 4-2003
APT20GF120BRD/SRD
5.0
4.0
2.0
1.5
1.0
1.2
1.1
1
0.9
0.8
0.7
10
1
0.1
100
10
1
VCC = 0.66 VCES
VGE = +15V
TJ = +25°C
IC = IC2
VCC = 0.66 VCES
VGE = +15V
TJ = +125°C
RG = 10 Ω
VCC = 0.66 VCES
VGE = +15V
RG = 10 Ω
IC1
0.5 IC2
IC2
IC1
Eon
Eoff
Eon
Eoff
0.5 IC2
IC2
TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
Figure 8, Typical VCE(SAT) Voltage vs Junction Temperature Figure 9, Maximum Collector Current vs Case Temperature
TJ, JUNCTION TEMPERATURE (°C) RG, GATE RESISTANCE (OHMS)
Figure 10, Breakdown Voltage vs Junction Temperature Figure 11, Typical Switching Energy Losses vs Gate Resistance
TJ, JUNCTION TEMPERATURE (°C) IC, COLLECTOR CURRENT (AMPERES)
Figure 12, Typical Switching Energy Losses vs. Junction Temperature Figure 13, Typical Switching Energy Losses vs Collector Current
F, FREQUENCY (KHz)
Figure 14,Typical Load Current vs Frequency
-50 -25 0 25 50 75 100 125 150 25 50 75 100 125 150
-50 -25 0 25 50 75 100 125 150 0 20 40 60 80 100
-50 -25 0 25 50 75 100 125 150 0 4 8 12 16 20
0.1 1.0 10 100 1000
40
30
20
10
0
5.0
4.0
3.0
2.0
1.0
0
1.6
1.2
0.8
0.4
0
For Both:
Duty Cycle = 50%
TJ = +125°C
Tsink = +90°C
Gate drive as specified
Power dissapation = 56W
ILOAD = IRMS of fundamental
IC, COLLECTOR CURRENT (AMPERES) TOTAL SWITCHING ENERGY LOSSES (mJ) BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VCE(SAT), COLLECTOR-TO-EMITTER
VOLTAGE (NORMALIZED) SATURATION VOLTAGE (VOLTS)
SWITCHING ENERGY LOSSES (mJ) SWITCHING ENERGY LOSSES (mJ) IC, COLLECTOR CURRENT (AMPERES)
Graph not Applicable
20GF120BRD/SRD
Symbol
VF
LS
Characteristic / Test Conditions
IF = 20A
Maximum Forward Voltage IF = 60A
IF = 20A, TJ = 150°C
Series Inductance (Lead to Lead 5mm from Base)
UNIT
Volts
nH
MIN TYP MAX
2.3
2.0
1.7
10
MAXIMUM RATINGS (FRED) All Ratings: TC = 25°C unless otherwise specified.
Symbol
IFAV
IFRMS
IFSM
UNIT
Amps
20GF120BRD/SRD
30
70
210
Characteristic
Maximum Average Forward Current (TC = 100°C, Duty Cycle = 0.5)
RMS Forward Current
Non-Repetive Forward Surge Current (TJ = 45°C, 8.3 ms)
ULTRAFAST SOFT RECOVERY PARALLEL DIODE
052-6252 Rev C 4-2003
*DRIVER SAME TYPE AS D.U.T.
V
CC
= 0.66 V
CES
E
ts
= E
on
+ E
off
V
CE
(on)
t
d
(off)
t
d
(on) t
f
t
r
1
Figure 15, Switching Loss Test Circuit and Waveforms
Figure 16, Resistive Switching Time Test Circuit and Waveforms
2
V
CC
R
G
R
L
=
.5 V
CES
I
C2
10%
90%
V
GE
(on)V
CE
(off)
V
GE
(off)
2
1
From
Gate Drive
Circuitry
D.U.T.
B
I
C
I
C
90%
10%
90%
10%
10%
90%
E
off
t
f
t
d
(off)
t
d
(on)
t
r
E
on
I
C
V
CLAMP
100uH
V
CHARGE
A
A
B
D.U.T.
DRIVER*
V
C
A
R
G
V
C
V
C
D.U.T.
V
CE
(SAT)
t=2us
20GF120BRD/SRD
MIN TYP MAX
70 85
70
160
255
255
712
12 20
660
1640
15
20
245
160
UNIT
nS
Amps
nC
Volts
A/µS
Characteristic/ Test Conditions
Reverse Recovery Time, IF = 1.0A, diF/dt = -15A/µS, VR = 30V, TJ = 25°C
Reverse Recovery Time TJ = 25°C
IF = 20A, diF/dt = -240 A/ µS, VR = 650V TJ = 100°C
Forward Recovery Time TJ = 25°C
IF = 20A, diF/dt = 240 A/ µS, V R = 650V TJ = 100°C
Reverse Recovery Current TJ = 25°C
IF = 20A, diF/dt = -240 A/ µS, VR = 650V TJ = 100°C
Recovery Charge TJ = 25°C
IF = 20A, diF/dt = -240 A/ µS, VR = 650V TJ = 100°C
Forward Recovery Voltage TJ = 25°C
IF = 20A, diF/dt = 240 A/ µS, V R = 650V TJ = 100°C
Rate of Fall of Recovery Current TJ = 25°C
IF = 20A, diF/dt = -240A/µS, VR = 650V (See Figure 18) TJ = 100°C
DYNAMIC CHARACTERISTICS (FRED)
Symbol
trr1
trr2
trr3
tfr1
tfr2
IRRM1
IRRM2
Qrr1
Qrr2
Vfr1
Vfr2
diM/dt
PEARSON 411
CURRENT
TRANSFORMER
0.5 IRRM
di
F
/dt Adjust
30µH
D.U.T.
+15v
-15v
0v
Vr
4
3
1
2
5
5
0.75 IRRM
trr/Qrr
Waveform
Zero
6
1
2
3
4
6
di
F
/dt - Current Slew Rate, Rate of Forward
Current Change Through Zero Crossing.
I
F
- Forward Conduction Current
I
RRM
- Peak Reverse Recovery Current.
trr - Reverse Recovery Time Measured from Point of I
F
Qrr - Area Under the Curve Defined by I
RRM
and trr.
diM/dt - Maximum Rate of Current Change During the Trailing Portion of trr.
Current Falling Through Zero to a Tangent Line
{
diM/dt
}
Extrapolated Through Zero Defined by 0.75 and 0.50 I
RRM
.
6
Figure 17, Diode Reverse Recovery Test Circuit and Waveforms
Figure 18, Diode Reverse Recovery Waveform and Definitions
Qrr = 1/2
(
trr . I
RRM)
052-6252 Rev C 4-2003
ZΘJC, THERMAL IMPEDANCE trr, REVERSE RECOVERY TIME IRRM, REVERSE RECOVERY CURRENT IF, FORWARD CURRENT
(°C/W) (nano-SECONDS) (AMPERES) (AMPERES)
tfr, FORWARD RECOVERY TIME Kf, DYNAMIC PARAMETERS Qrr, REVERSE RECOVERY CHARGE
(nano-SECONDS) (NORMALIZED) (nano-COULOMBS)
Vfr, FORWARD RECOVERY VOLTAGE
(VOLTS)
20GF120BRD/SRD
052-6252 Rev A
D=0.5
0.2
0.1
0.05
0.02
0.01 SINGLE PULSE
NOTE:
DM JC CJ=+
DUTY FACTOR D =t12
/
PEAK T P x Z T
PDM
t
2
t
t1
0 1 2 3 4 10 50 100 500 1000
0 200 400 600 800 1000 -50 -25 0 25 50 75 100 125 150
0 200 400 600 800 1000 0 200 400 600 800 1000
10-5 10-4 10-3 10-2 10-1 1.0 10
RECTANGULAR PULSE DURATION (SECONDS)
100
80
60
40
20
0
50
40
30
20
10
0
250
200
150
100
50
0
1.0
0.5
0.1
0.05
0.01
0.005
0.001
TJ=100°C
VR=650V
2400
2000
1600
1200
800
400
0
2.0
1.6
1.2
0.8
0.4
0.0
2000
1600
1200
800
400
0
100
80
60
40
20
0
TJ=100°C
VR=650V
TJ=100°C
VR=650V
TJ=100°C
VR=650V
IF=30A
trr
IRRM
Qrr
TJ = -55°C
TJ = 100°C
TJ = 150°C
15A
30A
60A
15A
30A
60A
60A
30A
15A
Vfr
tfr
TJ = 25°C
trr
Qrr
VF, ANODE-TO-CATHODE VOLTAGE (VOLTS) diF/dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 19, Forward Voltage Drop vs Forward Current Figure 20, Reverse Recovery Charge vs Current Slew Rate
diF/dt, CURRENT SLEW RATE (AMPERES/µSEC) TJ, JUNCTION TEMPERATURE (°C)
Figure 21, Reverse Recovery Current vs Current Slew Rate Figure 22, Dynamic Parameters vs Junction Temperature
diF/dt, CURRENT SLEW RATE (AMPERES/µSEC) diF/dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 23, Reverse Recovery Time vs Current Slew Rate Figure 24, Forward Recovery Voltage/Time vs Current Slew Rate
VR, REVERSE VOLTAGE (VOLTS)
Figure 25, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
052-6252 Rev C 4-2003
20GF120BRD/SRD
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
3.55 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Dimensions in Millimeters and (Inches)
2-Plcs.
Collector
(Cathode)
Emitter
(Anode)
Gate
Collector
(Cathode)
052-6252 Rev C 4-2003
15.95 (.628)
16.05(.632)
1.22 (.048)
1.32 (.052) 5.45 (.215) BSC
{2 Plcs.}
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018)
{3 Plcs}
0.56 (.022)
Dimensions in Millimeters (Inches)
Heat Sink (Collector)
and Leads (Cathode)
are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead)
Collector (Cathode
)
(Heat Sink)
1.98 (.078)
2.08 (.082)
Gate
Collector (Cathode)
Emitter (Anode)
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51(.532)
Revised
4/3/2003
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
Revised
4/3/2003
TO-247 Package Outline D3PAK Package Outline
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
