RB495D 40V, 350mA, SMD Schottky Diode Small Signal Diode SOT-23 3 A 1 2 F B Features E C Epitaxial planar die construction G D Surface device type mounting H Mositure sensitivity level 1 Matte tin (Sn) lead finishe with Nickel (Ni) underplate Pb-free version and RoHS compliant Unit (mm) Dimensions Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code. Unit (inch) Min Max Min Max A 2.80 3.00 0.110 0.118 0.055 B 1.20 1.40 0.047 Mechanical Data C 0.30 0.50 0.012 0.020 Case : SOT- 23 small outline plastic package D 1.80 2.00 0.071 0.079 Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guranteed E 2.25 2.55 0.089 0.100 F 0.90 1.20 0.035 0.047 High temperature soldering guaranted: 260/10s G Weight: 0.008 grams (approximate) H 0.550 REF 0.08 0.19 0.022 REF 0.003 0.010 Marking:D3Q Ordering Information Part No. Suggested PAD Layout Packing Code Package Packing Marking 0.95 0.037 RB495D RF SOT-23 3K / 7" Reel D3Q RB495D RFG SOT-23 3K / 7" Reel D3Q 2.0 0.079 0.9 0.035 0.8 Maximum Ratings 0.031 Rating at 25C ambient temperature unless otherwise specified. Maximum Ratings Type Number Symbol PD Value Units 200 mW VRRM 40 V Reverse Voltage VR 25 V Mean Forward Current IO 350 mA Power dissipation Repetitive Peak Reverse Voltage Non-Repetitive Peak Forward Surge Current ( Note 1) Junction Temperature Storage Temperature Range IFSM 1.5 A TJ 125 TSTG -40 ~+125 Note 1: Mean output current per element: IO/2. Note 2: The suggested land pattern dimensions have been provided for reference only, as actual pad layouts may vary despending on application. Version : E10 RB495D 40V, 350mA, SMD Schottky Diode Small Signal Diode Electrical Characteristics Type Number Reverse Breakdown Voltage Forward Voltage IR= 100uA IF= 10mA IF= 200mA VR= 25V VR=0, f=1.0MHz Reverse Leakage Current Junction Capacitance Min 40 - Max 0.32 - 0.55 70 50.0 uA pF Symbol K D A Dimension(mm) 2.40 Max. 1.50 +0.10 178 1 Reel inner diameter D1 50 Min. Feed hole width Sprocke hole position Punch hole position Sprocke hole pitch Embossment center Overall tape thickness Tape width Reel width D2 E F P0 P1 T W W1 13.0 0.5 1.75 0.10 3.50 0.05 4.00 0.10 2.00 0.10 0.6 Max. 8.30 Max. 14.4 Max. Symbol V(BR) VF IR CJ Units V V Carrier & Reel specification Item Carrier depth Sprocket hole Reel outside diameter TSC label Top Cover Tape Carieer Tape Any Additional Label (If Required) Macking W1 A D2 User direction of Feed D1 Note 1: A0, B0, and K0 are determined by component size. The clearance between the components and the cavity must be within 0.05 mm min. to 0.5 mm max. The component cannot rote more than 10o within the determined cavity. Note 2: If B1 exceeds 4.2 mm(0.165'') for 8 mm embossed tape, the tape may not feed through all tape feeders. Version : E10 RB495D 40V, 350mA, SMD Schottky Diode Small Signal Diode Rating and Characteristic Curves FIG 2 Reverse Current vs Reverse Voltage FIG 1 Typical Forward Characteristics 1000 1000 Reverse Current (nA) Ta=75C Forward Current (mA) 100 100 Ta=75 10 Ta=25C 1 Ta=25C 10 1 0.1 0.1 0.01 0 0.2 0.4 0.6 0 0.8 10 20 30 50 60 70 80 90 100 Reverse Voltage (V) Instantanceous Forward Voltage (V) FIG 3 Admissible Power Dissipation Curve FIG 4 Typical Junction Capacitance 250 70 60 200 Total Capacitance (pF) Power Dissipation (mW) 40 150 100 Macking 50 50 40 30 20 10 Reverse Voltage (V) 0 0 0 25 50 75 100 Ambient Temperature (C) 125 150 0 5 10 15 20 25 30 35 40 Reverse Voltage (V) Version : E10