BC857BTT1, BC857CTT1 Preferred Devices General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-416/SC-75 which is designed for low power surface mount applications. http://onsemi.com Features COLLECTOR 3 * Pb-Free Package is Available* 1 BASE MAXIMUM RATINGS (TA = 25C) Rating Symbol Max Unit Collector-Emitter Voltage VCEO -45 V Collector-Base Voltage VCBO -50 V Emitter-Base Voltage VEBO -5.0 V IC -100 mAdc Collector Current - Continuous Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, FR-4 Board (Note 1) TA = 25C Derated above 25C Thermal Resistance, Junction-to-Ambient (Note 1) Total Device Dissipation, FR-4 Board (Note 2) TA = 25C Derated above 25C Thermal Resistance, Junction-to-Ambient (Note 2) Junction and Storage Temperature Range 2 EMITTER 3 2 1 CASE 463 SOT-416 STYLE 1 MARKING DIAGRAM Symbol Max Unit 200 mW PD RJA xxM 1.6 mW/C 600 C/W 300 mW 2.4 mW/C ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. xx = Device Code M = Date Code PD RJA 400 C/W TJ, Tstg -55 to +150 C Preferred devices are recommended choices for future use and best overall value. 1. FR-4 @ min pad. 2. FR-4 @ 1.0 x 1.0 in pad. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2004 June, 2004 - Rev. 2 1 Publication Order Number: BC857BTT1/D BC857BTT1, BC857CTT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit -45 - - -50 - - -50 - - -5.0 - - - - - - -15 -4.0 BC857B BC857C - - 150 270 - - BC857B BC857C 220 420 290 520 475 800 - - - - -0.3 -0.65 - - -0.7 -0.9 - - -0.6 - - - -0.75 -0.82 fT 100 - - MHz Output Capacitance (VCB = -10 V, f = 1.0 MHz) Cob - - 4.5 pF Noise Figure (IC = -0.2 mA, VCE = -5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) NF - - 10 dB OFF CHARACTERISTICS V(BR)CEO Collector -Emitter Breakdown Voltage (IC = -10 mA) BC857 Series Collector -Emitter Breakdown Voltage (IC = -10 A, VEB = 0) BC857B Only Collector -Base Breakdown Voltage (IC = -10 A) BC857 Series Emitter -Base Breakdown Voltage (IE = -1.0 A) BC857 Series V V(BR)CES V V(BR)CBO V V(BR)EBO Collector Cutoff Current (VCB = -30 V) Collector Cutoff Current (VCB = -30 V, TA = 150C) ICBO V nA A ON CHARACTERISTICS DC Current Gain (IC = -10 A, VCE = -5.0 V) (IC = -2.0 mA, VCE = -5.0 V) hFE Collector -Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) (IC = -100 mA, IB = -5.0 mA) VCE(sat) Base -Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) (IC = -100 mA, IB = -5.0 mA) VBE(sat) Base -Emitter On Voltage (IC = -2.0 mA, VCE = -5.0 V) (IC = -10 mA, VCE = -5.0 V) VBE(on) - V V V SMALL-SIGNAL CHARACTERISTICS Current -Gain - Bandwidth Product (IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz) http://onsemi.com 2 BC857BTT1, BC857CTT1 TYPICAL CHARACTERISTICS 1.5 -1.0 TA = 25C -0.9 VCE = -10 V TA = 25C VBE(sat) @ IC/IB = 10 -0.8 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 1.0 0.7 0.5 -0.7 VBE(on) @ VCE = -10 V -0.6 -0.5 -0.4 -0.3 -0.2 0.3 VCE(sat) @ IC/IB = 10 -0.1 0.2 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 IC, COLLECTOR CURRENT (mAdc) 0 -0.1 -0.2 -100 -200 1.0 -2.0 TA = 25C -1.6 -1.2 -0.8 IC = -10 mA IC = -50 mA IC = -200 mA IC = -100 mA IC = -20 mA -0.4 0 -0.02 -55C to +125C 1.2 1.6 2.0 2.4 2.8 -10 -20 -0.1 -1.0 IB, BASE CURRENT (mA) -0.2 10 Cib 7.0 TA = 25C 5.0 Cob 3.0 2.0 1.0 -0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -10 -1.0 IC, COLLECTOR CURRENT (mA) -100 Figure 4. Base-Emitter Temperature Coefficient f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) Figure 3. Collector Saturation Region C, CAPACITANCE (pF) -100 -50 Figure 2. "Saturation" and "On" Voltages VB , TEMPERATURE COEFFICIENT (mV/ C) VCE , COLLECTOR-EMITTER VOLTAGE (V) Figure 1. Normalized DC Current Gain -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) -20 -30 -40 400 300 200 150 VCE = -10 V TA = 25C 100 80 60 40 30 20 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) Figure 5. Capacitances Figure 6. Current-Gain - Bandwidth Product http://onsemi.com 3 r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE BC857BTT1, BC857CTT1 1.0 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 t, TIME (s) Figure 7. Thermal Response The safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 8 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 7. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. -200 IC, COLLECTOR CURRENT (mA) 1s 3 ms -100 TA = 25C -50 TJ = 25C BC558 BC557 BC556 -10 -5.0 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -2.0 -1.0 -5.0 -10 -30 -45 -65 -100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 8. Active Region Safe Operating Area ORDERING INFORMATION Device Shipping Marking Package BC857BTT1 3F SOT-416 BC857BTT1G 3F SOT-416 (PB-Free) 3,000 / Tape & Reel BC857CTT1 3G SOT-416 3,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 BC857BTT1, BC857CTT1 PACKAGE DIMENSIONS SOT-416 (SC-75) CASE 463-01 ISSUE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. -A- S 2 3 D 3 PL 0.20 (0.008) DIM A B C D G H J K L S G -B- 1 M B K J 0.20 (0.008) A C L H http://onsemi.com 5 MILLIMETERS MIN MAX 0.70 0.90 1.40 1.80 0.60 0.90 0.15 0.30 1.00 BSC --- 0.10 0.10 0.25 1.45 1.75 0.10 0.20 0.50 BSC INCHES MIN MAX 0.028 0.035 0.055 0.071 0.024 0.035 0.006 0.012 0.039 BSC --- 0.004 0.004 0.010 0.057 0.069 0.004 0.008 0.020 BSC BC857BTT1, BC857CTT1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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American Technical Support: 800-282-9855 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 http://onsemi.com 6 For additional information, please contact your local Sales Representative. BC857BTT1/D