BC857BTT1 - ON Semiconductor

 Semiconductor Components Industries, LLC, 2004

June, 2004 − Rev. 2 1Publication Order Number:

BC857BTT1/D

BC857BTT1, BC857CTT1

Preferred Devices

General Purpose Transistor

PNP Silicon

These transistors are designed for general purpose amplifier

applications. They are housed in the SOT−416/SC−75 which is

designed for low power surface mount applications.

Features

•Pb−Free Package is Available*

MAXIMUM RATINGS (TA = 25°C)

Rating Symbol Max Unit

Collector−Emitter Voltage VCEO −45 V

Collector−Base Voltage VCBO −50 V

Emitter−Base Voltage VEBO −5.0 V

Collector Current − Continuous IC−100 mAdc

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation,

FR−4 Board (Note 1)

TA = 25°C

Derated above 25°C

PD200

1.6

mW/°C

Thermal Resistance,

Junction−to−Ambient (Note 1) RJA 600 °C/W

Total Device Dissipation,

FR−4 Board (Note 2)

TA = 25°C

Derated above 25°C

PD300

2.4

mW/°C

Thermal Resistance,

Junction−to−Ambient (Note 2) RJA 400 °C/W

Junction and Storage

Temperature Range TJ, Tstg −55 to

+150 °C

1. FR−4 @ min pad.

2. FR−4 @ 1.0 × 1.0 in pad.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

Preferred devices are recommended choices for future use

and best overall value.

COLLECTOR

BASE

EMITTER

CASE 463

SOT−416

STYLE 1

MARKING DIAGRAM

xxM

xx = Device Code

M = Date Code

See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

ORDERING INFORMATION

BC857BTT1, BC857CTT1

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown V oltage

(IC = −10 mA) BC857 Series V(BR)CEO −45 − − V

Collector−Emitter Breakdown V oltage

(IC = −10 A, VEB = 0) BC857B Only V(BR)CES −50 − − V

Collector−Base Breakdown V oltage

(IC = −10 A) BC857 Series V(BR)CBO −50 − − V

Emitter−Base Breakdown Voltage

(IE = −1.0 A) BC857 Series V(BR)EBO −5.0 − − V

Collector Cutoff Current (VCB = −30 V)

Collector Cutoff Current (VCB = −30 V, TA = 150°C) ICBO −

−−

−−15

−4.0 nA

A

ON CHARACTERISTICS

DC Current Gain

(IC = −10 A, VCE = −5.0 V) BC857B

BC857C

(IC = −2.0 mA, VCE = −5.0 V) BC857B

BC857C

hFE −

−

220

420

150

270

290

520

−

475

800

−

Collector−Emitter Saturation V oltage

(IC = −10 mA, IB = −0.5 mA)

(IC = −100 mA, IB = −5.0 mA)

VCE(sat) −

−−

−−0.3

−0.65

Base−Emitter Saturation Voltage

(IC = −10 mA, IB = −0.5 mA)

(IC = −100 mA, IB = −5.0 mA)

VBE(sat) −

−−0.7

−0.9 −

−

Base−Emitter On Voltage

(IC = −2.0 mA, VCE = −5.0 V)

(IC = −10 mA, VCE = −5.0 V)

VBE(on) −0.6

−−

−−0.75

−0.82

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz) fT100 − − MHz

Output Capacitance

(VCB = −10 V, f = 1.0 MHz) Cob − − 4.5 pF

Noise Figure

(IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 k,

f = 1.0 kHz, BW = 200 Hz)

NF − − 10 dB

BC857BTT1, BC857CTT1

http://onsemi.com

TYPICAL CHARACTERISTICS

Figure 1. Normalized DC Current Gain

IC, COLLECTOR CURRENT (mAdc)

2.0

Figure 2. “Saturation” and “On” Voltages

IC, COLLECTOR CURRENT (mAdc)

−0.2

0.2

Figure 3. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 4. Base−Emitter Temperature Coefficient

IC, COLLECTOR CURRENT (mA)

−0.6

−0.7

−0.8

−0.9

−1.0

−0.5

−0.2

−0.4

−0.1

−0.3

1.6

1.2

2.0

2.8

2.4

−1.2

−1.6

−2.0

−0.02 −1.0 −10

0−20

−0.1

−0.4

−0.8

hFE, NORMALIZED DC CURRENT GAIN

V, VOLTAGE (VOLTS)

VCE, COLLECTOR−EMITTER VOLTAGE (V)

VB, TEMPERATURE COEFFICIENT (mV/ C)°θ

1.5

1.0

0.7

0.5

0.3

−0.2 −10 −100

−1.0

TA = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE(on) @ VCE = −10 V

VCE = −10 V

TA = 25°C

−55°C to +125°C

IC = −100 mA

IC = −20 mA

−0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100

IC = −200 mAIC = −50 mAIC =

−10 mA

Figure 5. Capacitances

VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Current−Gain − Bandwidth Product

IC, COLLECTOR CURRENT (mAdc)

−0.4

1.0

100

200

300

400

7.0

5.0

3.0

2.0

−0.5

C, CAPACITANCE (pF)

f, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)

TA = 25°C

Cob

Cib

−0.6 −1.0 −2.0 −4.0 −6.0 −10 −20 −30 −40

150

−1.0 −2.0 −3.0 −5.0 −10 −20 −30 −50

VCE = −10 V

TA = 25°C

1.0

BC857BTT1, BC857CTT1

http://onsemi.com

Figure 7. Thermal Response

Figure 8. Active Region Safe Operating Area

VCE, COLLECTOR−EMITTER VOLTAGE (V)

−200

−1.0

IC, COLLECTOR CURRENT (mA)

TA = 25°C

BONDING WIRE LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

3 ms

TJ = 25°C

−100

−50

−10

−5.0

−2.0

−5.0 −10 −30 −45 −65 −100

1 s

BC558

BC557

BC556

The safe operating area curves indicate IC−VCE limits

of the transistor that must be observed for reliable opera-

tion. Collector load lines for specific circuits must fall be-

low the limits indicated by the applicable curve.

The data of Figure 8 is based upon TJ(pk) = 150°C; TC or

TA is variable depending upon conditions. Pulse curves are

valid for duty cycles to 10% provided T J(pk) ≤ 150°C. TJ(pk)

may be calculated from the data in Figure 7. At high case

or ambient temperatures, thermal limitations will reduce

the power that can be handled to values less than the limita-

tions imposed by the secondary breakdown.

0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000

0.001

0.01

0.1

1.0

r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE

t, TIME (s)

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D = 0.5

ORDERING INFORMATION

Device Marking Package Shipping†

BC857BTT1 3F SOT−416

BC857BTT1G 3F SOT−416

(PB−Free) 3,000 / Tape & Reel

BC857CTT1 3G SOT−416 3,000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi-

cations Brochure, BRD8011/D.

BC857BTT1, BC857CTT1

http://onsemi.com

PACKAGE DIMENSIONS

SOT−416 (SC−75)

CASE 463−01

ISSUE C

DIM MIN MAX MIN MAX

INCHESMILLIMETERS

A0.70 0.90 0.028 0.035

B1.40 1.80 0.055 0.071

C0.60 0.90 0.024 0.035

D0.15 0.30 0.006 0.012

G1.00 BSC 0.039 BSC

H−−− 0.10 −−− 0.004

J0.10 0.25 0.004 0.010

K1.45 1.75 0.057 0.069

L0.10 0.20 0.004 0.008

S0.50 BSC 0.020 BSC

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

0.20 (0.008) B

−A−

−B−

3 PL

0.20 (0.008) A

BC857BTT1, BC857CTT1

http://onsemi.com

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

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PUBLICATION ORDERING INFORMATION

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USA/Canada

Japan: ON Semiconductor, Japan Customer Focus Center

2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Phone: 81−3−5773−3850

BC857BTT1/D

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