Silicon C230-C232 Controlled Rectifier C231-C233 25 ARMS TO 600 VOLTS The Silicon Controlled Rectifier C230/C232 is a reverse blocking triode thyristor designed for power switching and control circuits for high volume light industrial and consumer applications. The C231/C233 is basically the same as the C230/C232 device except for a specially selected gate trigger current of 9 milliamperes maximum. This SCR is a hermetically sealed device which incorporates General Electrics patented POWER-GLAS process that improves upon normal pellet passivation techniques. It pro- vides an intimate bond between the silicon chip and the glass coating. The resulting stable, low-level leakage current provides excellent performance and demonstrated reliability. FEATURES: POWER-GLAS passivated silicon chip for maximum reliability. Very low off-state (leakage) current at room and elevated temperatures. Low power required for gate triggering. Power switching capabilities up to 1O KW. Excellent surge current capability. 1800 Volts RMS surge isolation voltage on isolated SCRs. Attractive pricing for applications requiring medium power devices. SIX BASIC PACKAGES e Other packages available upon request. PRESS-FIT ISOLATED STUD ISOLATED TO-3 With Press-On L FLANGE Anode Terminal S S TYPE 4 NON-ISOLATED ISOLATED STUD NON-ISOLATED TO-3 STUD < With Solder Ring FLANGE Anode Terminal 874C230/C232 C231/C233 MAXIMUM ALLOWABLE RATINGS VOLTAGE RATINGS U F A B Cc D E M TEST CONDITIONS VOLTS | VOLTS ; VOLTS | VOLTS | VOLTS | VOLTS | VOLTS | VOLTS Vprm Repetitive Peak Off-State Voltage (1,3) 25 50 100 200 300 400 500 600 | Verm Repetitive Peak Reverse Voltage To = -40C to 100C Veasm Non-Repetitive Reverse Voltage (1, 2) 35 75 150 300 400 500 600 720 Te = -40C to 100C RMS On-State Current, It@pMsy-- ee eee 25 Amperes (All Conduction Angles) Average On-State Current, Ip(qayy -- ee ee Depends on Conduction Angle (See Charts 1 and 2) Critical Rate-of-Rise of On-State Current, di/dt 2.2... 0. ee (See Chart 11) Gate Triggered Operation ~ Switching from 200 Volts................2...000..-- 100 Amperes Per Microsecond - Switching from 400 Volts...........0. 0... -.. 0000005 65 Amperes Per Microsecond -- Switching from 600 Volts..........0.02.. 000000000 08 30 Amperes Per Microsecond Peak One Cycle Surge (Non-Repetitive) On-State Current, Itsy, 60Hz ... 2.2... ee ee 250 Amperes It (for fusing) for times > 1.0 milliseconds ... 0... ee eee 260 Ampere? Seconds Peak Gate Power Dissipation, Poy .. 1... eee ee eee ee eee eee ee ss 3 Watts for 10 Microseconds Average Gate Power Dissipation, Pagay)-. 2 te eee ee 0.5 Watts Peak Positive Gate Current, Igy... eee ee ee eee (See Chart 7) Peak Positive Gate Voltage, Vom... ee ne ee ee ee (See Chart 7) Peak Negative Gate Voltage, Voy... ce ee nee 5 Volts Storage Temperature, Tyg -- 0-2 eee eee eee Lee eee teens -40C to +125C Operating Temperature, Ty... 0. ne eee e teens -40C to +100C Stud Torque (Isolated and Non-Isolated Stud Types) .........-.....-2-0.005. 25 Lb.-In. (29 Kg-Cm) (2.8 N-M) Maximum Insertion Pressure (Press-Fit Types) .... 2.2.0.0... eee ee eee eee 800 Lbs. (364 Kg)(3.56N x 10) Isolation Breakdown Voltage Between any Terminal and Stud or Flange (Isolated Types)(S).......... 1800 Volts RMS NOTES: 1. Values apply for zero or negative gate voltage only. 2. Half sine wave voltage pulse, 10 millisecond maximum duration. 3. During performance of the Off-State and Reverse Blocking tests, the SCR should not be tested with a constant current source which would permit applied voltage to exceed the device rating. 4, di/dt rating is established in accordance with EIA-NEMA Standard RS-397, Section 5.2.2.6. . Rating applies for 50, 60 and 400 Hz sinusoidal wave form. PART NUMBER DESIGNATION C 230 U 2 SILICON CONTROLLED RECTIFIER | STUD/TO-3 FLANGE PACKAGE VARIATIONS CURRENT RATING & PACKAGE STYLE VOLTAGE RATINGS None = Non-Isolated Stud Mount 2 = Isolated Stud Mount with 230 = 25 A RMS Stud-TO-3 Flange U = 25 Velts Press-on Anode Terminal 232 = 25 A RMS Press-Fit F= 50 Volts 3= Isolated Stud Mount with A = 100 Volts Solder Ring Anode Terminal 231 = 25 A RMS Stud/TO-3 Flange B = 200 Volts A = Isolated on TO-3 Outline 233 = 25 A RMS Press-Fit C = 300 Volts Mounting Flange D = 400 Volts 5 = Non-Isolated on TO-3 Outline E - 500 Volts Mounting Flange M = 600 Volts 6 -- 9 = Other Standard Variations 875C230/C232 231/C233 CHARACTERISTICS TEST SYMBOL MIN. TYP. MAX. UNITS TEST CONDITIONS Repetitive Peak Off- IrRRM mA VprM = VrrM = Max. allowable volts peak State and Reverse and = Current() IpRM _ _ 0.5 Te * Fas _ - 1.0 To = +100 C Peak On-State VIM ~ 1.9 Volts Tc = +25C, Ip = 100A Peak, 1 msec Voltage wide pulse. Duty Cycle < 2%, Critical Rate-of-Rise of dv/dt 200 ~ Volts/usec! To = +100C, Rated Vprm, Gate Open Off-State Voltage Circuited, Linear Wave form. (Higher values may cause device switching) DC Gate Trigger Igt mAdc Current C230/C232 25 Te = +25C, Vp = 12 Vde, Ry = 120 Ohms ~ 40 Tc = -40C, Vp = 12 Vdc, Ry = 60 Ohms C231/C233 = _ 9 Tc = +25C, Vp = 12 Vdc, Ry = 120 Ohms _ _ 20 Tc = -40C, Vp = 12 Vde, Ry = 60 Ohms DC Gate Trigger Ver _ 1.5 Vide Tc = +25C, Vp = 12 Vde, Ry, = 120 Ohms Voltage _ 2.0 To = -40C, Vp = 12 Vdc, Ry, = 60 Ohms DC Gate Non-Trigger Vep 0.2 Vde Tc = +100C, Rated Vopr, Ry = Voltage 1000 Ohms DC Holding Current Ty mAdc Anode Source Voltage = 24 Vdc, Peak Init- iating On-State Current = 0.5 Amps, 0.1 msec to 10 msec Wide Pulse. Gate Trigger Source = 7 Volts, 20 Ohms - - 50 Tc = +25C _ ~ 100 Tc = -40C DC Latching Current I, mAdc Anode Source Voltage = 24 Vdc, Gate Trigger Source = 15 Volts, 100 Ohms, 50 usec Pulse Width, 5 usec rise and fall times max. _ 100 To = +25C _ 200 Tc = -40C Steady-State Thermal Rela _ 45 c/Watt | Junction-to-Ambient Resistance(2) _ _ Steady-State Thermal Rgsc c/Wwatt | Junction-to-Case Resistance - 1.00 Non-Isolated Stud /Press-Fit _ _ 1.15 Isolated Stud _ - 1.15 Non-Isolated TO-3 Flange _ 1.30 Isolated TO-3 Flange NOTES: 1, Values apply for zero or negative gate voltage only. 2. The junction-to-ambient value is under worst case conditions; i.e., with No. 22 copper wire used for electrical contact to the terminals and natural convection cooling. WARNING Isolated products described in this specification sheet should be handled with care. The ceramic portion of these thyristors contains BERYLLIUM OXIDE as a major ingredient. Do not crush, grind, or abrade these portions of the thyristors because the dust resulting from such action may be hazardous if inhaled, 876MAXIMUM ALLOWABLE CASE TEMPERATURE-C. INSTANTANEOUS ON- STATE CURRENT ( AMPERES) C230/C232 231/C233 MAXIMUM ALLOWABLE CASE TEMPERATURE -*C QO 4 8 12 16 20 24 28 AVERAGE FORWARD CURRENT~ AMPERES AVERAGE FORWARD CURRENT- AMPERES 1. MAXIMUM ALLOWABLE CASE TEMPERATURE 2. MAXIMUM ALLOWABLE CASE TEMPERATURE FOR HALF-WAVE RECTIFIED FOR FULL-WAVE RECTIFIED SINE WAVE OF CURRENT FULL-WAVE OF CURRENT (FOR NON-ISOLATED STUD AND (FOR NON-ISOLATED STUD AND PRESS-FIT CASE TYPES ONLY) PRESS-FIT CASE TYPES ONLY) N eo NOTE: JUNCTION TEMPERATURE IMMEDIATELY PRIOR TO SURGE -40C To + 100C a = a = < - is = 3 Th=+25C = , 10 $ | NOTES: > 1. Ip tt MSEC WIDE PULSE, = 0.t tl z 0.5 z u 40 a =z 0. = 0 ! 2 3 a 1 2 4 680 2 86 40s INSTANTANEOUS ON- STATE VOLTAGE (VOLTS) z CYCLES AT 60 CPS 3. MAXIMUM ON-STATE VOLTAGE VS. 4. MAXIMUM ALLOWABLE PEAK SURGE CURRENT ON-STATE CURRENT FOLLOWING RATED LOAD CONDITIONS a 28 n = Ny o AVERAGE FORWARD POWER DISSIPATION- WATTS AVERAGE FORWARD POWER DISSIPATION- WATTS 0 4 8 2 6. 20 24 28 4 a) 6 20 24 ~O AVERAGE FORWARD CURRENT-AMPERES AVERAGE FORWARD CURRENT-AMPERES 5. MAXIMUM FORWARD POWER DISSIPATION 6. MAXIMUM FORWARD POWER DISSIPATION FOR HALF-WAVE RECTIFIED FOR FULL-WAVE RECTIFIED SINE WAVE OF CURRENT 877 SINE WAVE OF CURRENTC230/C232 231/C233 10 - 7 ne | \ \ MINIMUM GATE CURRENT REQUIRED . TRIGGER ALL UNITS AT: 9 MINIMUM GATE CURRENT REQ'D TO TRIGGER 9 T{- MaxXIMUM ALLOWABLE T p \ . sec] -40 INSTANTANEOUS GATE 28% 40C . qd e POWER DISSIPATION 2 | | : qe 3 8 \__25,0 WATTS poke . 7 VOH MAX E 20) ln \ wy INSTANTANEOUS eaTe 5 a KN | POWER DISSIPATION KY 2 \ 5 Se \.2 50 warTs 5 SS -4oc|7 7 ~ 2 3 15 Sra s2see -40rc | v 218 . 7 z \ w SY SS Wn, oate |S V w TAN NAN +28eC = -40C 9 ok 4 A SY VOLTAGE RED] < 3 MINIWUM GATE Fe Le IS TO TRIGGER 13 6 10 AAA) VOLTAGE J 3 3 . SA ALL UNITS AT: |S x Ny SAN REQUIRED TO 8 | \ 2 NY > 2 > N TRIGGER ALL w : AWS w 3 SS UNITS AT: a5 N Zos > a 5 4 z osieh NS eet MAX. GATE VOLTAGE THAT wit IN - NY MAXIMUM GATE VOLTAGE THAT g \ NOT TRIGGER ANY UNITS AT o \ z et | WiLL NOT TRIGOER ANY UNITS Be \ #logee # O2 VY | 3 RECOMMENDED s 5 3 a pees dnd z j RECOMMENDED ~ 10-20 50 Z TRIGGER AREA x ]# oe 5 20 5 TRIGGER AREA ho. INSTANTANEOUS GATE CURRENT-MILLIAMPERES) SS _INSTANTANEOUS oate CURRENT- MILLIAMPERES Zz 93 = ~ a 5 = <r] | ne g | Pp foe a 7 rT ad 2 po ~~ enn rT rene Lemme | errand ; bp ; }TNOTES: (I} UUNCTION TEMPERATURE, -40 TO +100C ne NOTES, (i) JUNCTION TEMPERATURE -40C TO + = " (2)SHADED AREA REPRESENTS THE LOCUS OF POSSIBLE (2) SHADED AREA REPRENTS LOCUS OF POSSIBLE TRISGERING POINTS FROM -40 TO + TRIGGERING POINTS FROM -40C TO +100C f ; l | ' | % 02 #04 O8 08 lo 2 r i 18 20 22 Ba 26 28 0 02 04 06 0.8 1.0 he 4 1.6 18 20 22 24 26 28 INSTANTANEOUS GATE CURRENT-AMPERES INSTANTANEOUS GATE CURRENT.- AMPERES 7. GATE TRIGGERING CHARACTERISTICS 8. GATE TRIGGERING CHARACTERISTICS (C230 AND C232 TYPES) (C231 AND C233 TYPES) 160 CURVE SHOWS MAXIMUM VALUES FOR 6.0 TEMPERATURE RANGE -40C TO +100C 140 5.6 CURVE SHOWS MAXIMUM VALUES FOR g RECTANGULAR GATE VOLTAGE PULSE TEMPERATURE RANGE -40C TO + i00%C ox APPLIED FROM 20 OHM SOURCE 5.2 RECTANGULAR GATE VOLTAGE PULSE wu ANODE SUPPLY: 12 VOLTS, 60 OHMS 48 APPLIED FROM 20 OHM SOURCE. g '20 " ANODE SUPPLY: 12 VOLTS, 60 OHMS s 44 - 3 g = J 4.0 = 100 2 1 ' 36 g w 80 = 32 = 3 2.8 3 . ~ 80 6230 ,C232 TYPES i 2A oO & 8 @ = 20 2 40 we 16 r C231, C233 3 12 w 0.8 E 20 04 0 9 4 38 10 20 40. 60 80 100 0.2 04 060810 2. 40 60 8010 20 40 608010 o 06 08 | 2 6 GATE PULSE WIDTH MICROSECONDS 9. VARIATION OF GATE TRIGGER CURRENT WITH GATE PULSE WIDTH (ALL TYPES) tooo 600 600 uw 4 ya 90 exe / ww SAS O4 A a a a. wx \ = 9 fo/, w<_ 200 SY s oo a ey S Q,. ( & Sz SAY Fu & cy Snore Og '00 ALK 4 1. FREQUENCY 400H2 MAXIMUM. se Ky ANY KOT] 2 CASE TEMPERATURE - 40C TO +100C 35 80 OD A 3. REQUIRED GATE DRIVE: 10 VOLTS, 20 OM SOURCE, 10T. 25 0/0 ya MICROSECONO PULSE WIDTH MINIMUM,0.2 MICROSECONQ 60 AMPA iS) V4 RISE TIME NAXIMUM a. Zu Q&Se 4 /ALUE OF ON-STATE CURRENT MUST Pe 40 O70) & NEVER EXCEE TURN=ON CURRENT LIMIT LINES D. =< e eS o y SHOWN. =r Qe Ky 5. di/at RATING IS ESTABLISHED IN ACCORDANCE WITH 1. Xw % g JEDEC SUGGESTED STANOARD NO. 7, SECTION 5.1.2.4. < OSG & OFF -STATE (BLOCKING) VOLTAGE CAPABILITY MAY BE sl ANALY, TEMPORARILY LOST AFTER EACH CURRENT PULSE LI. z 20 Wy Ay FOR DURATIONS LESS THAN THE PERIOD OF THE Oo L OY APPLIED PULSE REPETITION RATE. THE PUL SE WH REPETITION RATE FOR THIS TEST 13 400Hz. THE, Seach THE JEDEC 41/61 TEST CONDITION 1S! 10 1 Li ptf ti o.! 1.0 10 oo TIME FROM START OF CURRENT FLOW (MICROSECONDS) 11. TURN-ON CURRENT LIMIT 878 GATE PULSE WIDTH - MICROSECONDS 10. VARIATION OF GATE TRIGGER VOLTAGE WITH GATE PULSE WIDTH (ALL TYPES) NOTES: T I bE (1) CURVE DEFINES TEMPERATURE RISE OF JUNCTION ABOVE CASE & | FoR SINGLE LOAD PULSE OF DURATION | PEAK ALLOWABLE < POWER DISSIPATION IN SCR, FOR TIME 1, STARTING FROM = CASE TEMPERATURE Tc, EQUALS 100C (MAX T,,) z 1.0; Hansen rans Gata TM uw . i" a i 2 _ Ppeak * oon Te A | _ ci i, 0.8 o t2) FOR OPTIMUM RATINGS AND FURTHER A, 2 INFORMATION SEE PUBLICATION 200.9 < ENTITLED " POWER SEMICONDUCTOR a RATINGS UNDER TRANSIENT AND Lg & L-~ INTERMITTENT LOADS. a 0. = : 4 vi Z a wr 0.4 WwW x Xe = 1 = o.2 A oe - 93 | < 4 Ee | 0.001 0.01 o Ol TIME IN SECONDS 12. MAXIMUM TRANSIENT THERMAL IMPEDANCE JUNCTION-TO-CASE (FOR NON-ISOLATED STUD AND PRESS-FIT CASE TYPES ONLY}OUTLINE DRAWINGS C230/C232 ain STRAIGHT ||. KNURL fo - iu ey WITH PRESS-ON \ TERMINAL 2 a C231/C232 2 VIEW SHOWING | TERMINAL. 2 5 mys 2. ANODE w WITH SOLDER RING TERMINAL 2 50 TPI (kNURC |, CATHODE PRESS-FIT ISOLATED STUD ISOLATED STUD i TERMINAL TYPE 2 TYPE 3 ARRANGEMENT VIEW SHOWING v2 TERMINAL 2 Ht AK yh 1 AG iAH NON-ISOLATED TO-3 FLANGE TYPE 4 TYPE 5 INCHES METRIC _MM INCHES METRIC MM NOTES: SYMBOL Tain, MAX. MIN. MAX. SYMBOL Fan, MAX. MIN. MAX. A 501 505 12.73 12.82 580 S10 14.74 15.49 1. Case temperature is measured for press-fit devices at the cen- 5 Ser ne rt wee a 38 = 2454 ter of the base; for stud types 1, 2 and 3 at the center of any D 260 301 660 765 AC "220 REF 559 REF hex flat; for TO-3 outline mounting flange types 4 and 5 at E 083 097 2. 2.46 AD ol2 023 I 58 the center of the bottom of the flange. f 340 376 8.64 9.55 AE 140 150 3,56 3.61 2. One external tooth lock washer and one nut (both steel, 6 _ 782 - 19.86 AF 229 25! 5.82 637 . ; lied with h d and isolated H OBI 089 2.06 2.26 AG 1182 1192 3003 | 3027 cadmium plated) are supplied with each stud and isolate J .060 069 183 75 AH 160 = 4.07 stud unit. N ~ 888 = 22.04 ay pei er 7828 noes 3. Insulation hardware for stud devices consisting of solder P ATS 2.06 _| - - - = terminal, mica washers and one nylon bushing are available Q 432 442 10.98 22 AL 150 16i 3.81 4.08 r (5) 1/4-28, UNF2A =- -_ | AM _ ole _ 25.92 at extra cost upon request. Ss 086 098 2.19 248 || AN _ se saa er . Other standard package variations are available upon request. T 552 562 14.03 14.27 AP 9 13) 3. . : . . . . v 340 260 S10 660 AO _ 98 23.25 5. Metric stud 8mm x 1.25 (.315 in. x .049 in.) is available w 145 160 3.68 406 AR _ SIS _ (3.08 upon request. MOUNTING CONSIDERATIONS Installation of Press-Fit Device in Heat Sink When press fitting SCR into a heatsink, the following specifications and recommendations apply: 1. Heatsink materials may be capper, aluminum or steel For maxi- mum heat transfer and minimum corrosion problems, copper is recommended. The heatsink thickness, or amount of heatsink wall, in contact with the SCR should be 1/8 inch. 2. The hole diameter into which the SCR is pressed must be 0.4975 = .001 inch. A slight chamfer on the hole should be used. This hole may be punched in a flat plate and reamed, or extruded and sized in sheet metal. 3. The entire knurled section of the SCR should be in contact with the heatsink to insure maximum heat transfer. The SCR must not be inserted into a heatsink deeper than the knurl height. 4. The SCR insertion force must not exceed 800 pounds. If the insertion force approaches this value before complete insertion, either the SCR is misaligned with the hole or the SCR-to-hole interference is excessive, The insertion force must be unt formly applied to the top face (terminal end) of the SCR within an annular ring which has an inside diameter of not less than 0.370 inch and not larger than 0.390 inch; the outside diameter of the insertion force must not be less than 0.500 inch. 5S. The thermal resistance between the SCR case and a copper heat- sink will not exceed 0.5C/W, if the SCR is inserted in the manner described, Soldering of Press-Fit Package to Heat Sink The press-fit package may be soldered directly to a heatsink using 60/40 (Pb-Sn) solder at a temperature of about 200C. 879 Attachment of Press Fit Device to Printed Circuit Board For certain light. load applications, the SCR can be inverted and, using a special brass bracket (A7149451), dip-soldered into a printed circuit board. The feet on the bracket act both as a mechan- ical support and anode electrical connection, For SCRs_ pre- assembled into the bracket, add -X123 to the type number, for example C230BX123. PRINTED CIRCUIT BOARD DIP SOLDER CONNECTIONS BOTTOM VIEW OF ASSEMBLY BEFORE MOUNTING TO BOARD Attachment of the Stud & Isolated Stud Device To a Heat Sink These devices require certain precautions in order to insure good thermal transfer, The chassis hole must be drilled and deburred, and should be between .005 and .O1S inches larger than the stud outside diameter, The use of a Torque wrench is highly recommended and must be used within the torque limits indicated on page 2. A good grade of silicone grease will minimize contact thermal resistance,