2N3773G - ON Semiconductor

 Semiconductor Components Industries, LLC, 2004

July, 2004 − Rev. 10 1Publication Order Number:

2N3773/D

NPN 2N3773*, PNP 2N6609

Preferred Device

Complementary Silicon

Power Transistors

The 2N3773 and 2N6609 are PowerBase power transistors

designed for high power audio, disk head positioners and other linear

applications. These devices can also be used in power switching

circuits such as relay or solenoid drivers, DC−DC converters or

inverters.

Features

•Pb−Free Packages are Available**

•High Safe Operating Area (100% Tested) 150 W @ 100 V

•Completely Characterized for Linear Operation

•High DC Current Gain and Low Saturation Voltage

hFE = 15 (Min) @ 8.0 A, 4.0 V

VCE(sat) = 1.4 V (Max) @ IC = 8.0 A, IB = 0.8 A

•For Low Distortion Complementary Designs

MAXIMUM RATINGS (Note 1)

Rating Symbol Value Unit

Collector − Emitter Voltage VCEO 140 Vdc

Collector − Emitter Voltage VCEX 160 Vdc

Collector − Base Voltage VCBO 160 Vdc

Emitter − Base Voltage VEBO 7 Vdc

Collector Current

− Continuous

− Peak (Note 2)

IC16

30

Adc

Base Current − Continuous

− Peak (Note 2)

IB4

15

Adc

Total Power Dissipation @ TA = 25°C

Derate above 25°CPD150

0.855 W

W/°C

Operating and Storage Junction

Temperature Range TJ, Tstg −65 to +200 °C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

1. Indicates JEDEC Registered Data.

2. Pulse Test: Pulse Width = 5 ms, Duty Cycle  10%.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance,

Junction−to−Case RJC 1.17 °C/W

**For additional information on our Pb−Free strategy and soldering details,

please download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

TO−204

CASE 1−07

*Preferred devices are recommended choices for future

use and best overall value.

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

http://onsemi.com

MARKING

DIAGRAM

16 A COMPLEMENTARY

POWER TRANSISTORS

140 V, 150 W

2Nxxxx

MEX

AYYWW

xxxx = 3773 or 6609

A = Assembly Location

YY = Year

WW = Work Week

NPN 2N3773*, PNP 2N6609

http://onsemi.com

2

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS (Note 3)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Breakdown Voltage (Note 4)

(IC = 0.2 Adc, IB = 0)

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

140

ÎÎÎ

Î

ÎÎÎ

−

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Sustaining Voltage (Note 4)

(IC = 0.1 Adc, VBE(off) = 1.5 Vdc, RBE = 100 Ohms)

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

VCEX(sus)

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

160

ÎÎÎ

Î

ÎÎÎ

−

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Sustaining Voltage

(IC = 0.2 Adc, RBE = 100 Ohms)

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

VCER(sus)

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

150

ÎÎÎ

Î

ÎÎÎ

−

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current (Note 4)

(VCE = 120 Vdc, IB = 0)

ÎÎÎÎ

ICEO

ÎÎÎÎ

−

ÎÎÎ

10

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current (Note 4)

(VCE = 140 Vdc, VBE(off) = 1.5 Vdc)

(VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150C)

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

ICEX

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

−

ÎÎÎ

Î

ÎÎÎ

2

10

ÎÎÎ

Î

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 140 Vdc, IE = 0)

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

ICBO

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

−

ÎÎÎ

Î

ÎÎÎ

2

ÎÎÎ

Î

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (Note 4)

(VBE = 7 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

−

ÎÎÎ

5

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (Note 3)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 8 Adc, VCE = 4 Vdc) (Note 4)

(IC = 16 Adc, VCE = 4 Vdc)

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

hFE

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

15

5

ÎÎÎ

Î

ÎÎÎ

60

−

ÎÎÎ

Î

ÎÎÎ

−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Saturation Voltage

(IC = 8 Adc, IB = 800 mAdc) (Note 4)

(IC = 16 Adc, IB = 3.2 Adc)

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

−

ÎÎÎ

Î

ÎÎÎ

1.4

4

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base−Emitter On Voltage (Note 4)

(IC = 8 Adc, VCE = 4 Vdc)

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

—

ÎÎÎ

2.2

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Magnitude of Common−Emitter

Small−Signal, Short−Circuit, Forward Current Transfer Ratio

(IC = 1 A, f = 50 kHz)

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

|hfe|

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

4

ÎÎÎ

Î

ÎÎÎ

−

ÎÎÎ

Î

ÎÎÎ

−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small−Signal Current Gain (Note 4)

(IC = 1 Adc, VCE = 4 Vdc, f = 1 kHz)

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

hfe

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

40

ÎÎÎ

Î

ÎÎÎ

−

ÎÎÎ

Î

ÎÎÎ

−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SECOND BREAKDOWN CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Second Breakdown Collector Current with Base Forward Biased

t = 1 s (non−repetitive), VCE = 100 V, See Figure 12

ÎÎÎÎ

IS/b

ÎÎÎÎ

1.5

ÎÎÎ

−

ÎÎÎ

Adc

3. Pulse Test: Pulse Width = 300 s, Duty Cycle  2%.

4. Indicates JEDEC Registered Data.

ORDERING INFORMATION

Device Package Shipping†

2N3773 TO−204 100 Unit / Tray

2N3773G TO−204

(Pb−Free) 100 Unit / Tray

2N6609 TO−204 100 Unit / Tray

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi-

cations Brochure, BRD8011/D.

NPN 2N3773*, PNP 2N6609

http://onsemi.com

3

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

300

0.2

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (AMPS)

5.0

0.3 0.5 0.7 1.0 2.0 3.0 5.0 20

50

30

20

100

70

hFE, DC CURRENT GAIN

150°C

25°C−55 °C

VCE = 4 V

NPN PNP

IC, COLLECTOR CURRENT (AMPS)

hFE, DC CURRENT GAIN

7.0

10

200

7.0 10

Figure 2. DC Current Gain

150°C

25°C

−55 °C

Figure 3. Collector Saturation Region

2.0

0.05

IB, BASE CURRENT (AMPS)

00.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0

1.6

1.2

0.8

0.4

TC = 25°C

IC = 4 A

IC = 16 A

Figure 4. Collector Saturation Region

2.0

IB, BASE CURRENT (AMPS)

0

1.6

1.2

0.8

0.4

TC = 25°C

2.0

0.2

IC, COLLECTOR CURRENT (AMPS)

0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 20

1.2

0.4

0

IC/IB = 10

VBE(sat)

V, VOLTAGE (VOLTS)

Figure 5. “On” Voltage

1.6

0.8

10

150°C

25°C

VCE(sat)

25°C

2.0

IC, COLLECTOR CURRENT (AMPS)

1.2

0.4

IC/IB = 10

VBE(sat)

V, VOLTAGE (VOLTS)

Figure 6. “On” Voltage

1.6

0.8

150°C

25°C

VCE(sat)

150°C

25°C

VCE = 4 V

IC = 4 A

IC = 8 A

0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 207.0 10

300

5.0

50

30

20

100

70

7.0

10

200

IC = 8 A

0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0

IC = 16 A

0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 2010

150°C

NPN 2N3773*, PNP 2N6609

http://onsemi.com

4

30

3.0

Figure 7. Forward Bias Safe Operating Area

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

20

10

5.0

3.0

2.0

1.0

0.5

0.03 5.0 7.0 10 20 30 50 300

BONDING WIRE LIMIT

THERMAL LIMIT

@ TC = 25°C, SINGLE PULSE

SECOND BREAKDOWN LIMIT

70

0.3

0.2

IC, COLLECTOR CURRENT (AMP)

dc

10 s

100 s

100 ms

0.1

0.05

100 200

40 s

200 s

1.0 ms

500 ms

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − V CE

limits of the transistor that must be observed for reliable

operation: i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 7 is based on TJ(pk) = 200C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

< 200C. At high case temperatures, thermal limitations

will reduce the power that can be handled to values less than

the limitations imposed by second breakdown.

100

80

60

40

0

20

0 40 80 120 160 200

Figure 8. Power Derating

TC, CASE TEMPERATURE (°C)

POWER DERATING FACTOR (%)

THERMAL

DERATING

NPN 2N3773*, PNP 2N6609

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5

PACKAGE DIMENSIONS

TO−204 (TO−3)

CASE 1−07

ISSUE Z

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO−204AA OUTLINE SHALL APPLY.

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.550 REF 39.37 REF

B−−− 1.050 −−− 26.67

C0.250 0.335 6.35 8.51

D0.038 0.043 0.97 1.09

E0.055 0.070 1.40 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N−−− 0.830 −−− 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

A

N

E

C

K

−T− SEATING

PLANE

2 PL

D

M

Q

M

0.13 (0.005) Y M

T

M

Y

M

0.13 (0.005) T

−Q−

−Y−

2

1

UL

GB

V

H

NPN 2N3773*, PNP 2N6609

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6

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to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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2N3773/D

PowerBase is a registered trademark of Semiconductor Components Industries, LLC (SCILLC).

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