UPF19090 TM 90W, 2 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for PCS and PCN base station applications in the frequency band 1.9 to 2.0 GHz. Ideal for CDMA, EDGE, GSM, and Multi-Carrier Power Amplifiers in Class A or AB operation. * ALL GOLD metal system for highest reliability * Industry standard package * Suggested alternative to the MRF19090 * Internally matched for repeatable manufacturing * High gain, high efficiency and high linearity Application Specific Performance, 1.96 GHz Package Type 440158 GSM: 90 Watts 11 dB EDGE: 36 Watts 11 dB IS95 CDMA: 9 Watts 11 dB W-CDMA: 7 Watts 11 dB * Typical CDMA Performance: 1960 MHz, 26 Volts IS-95 CDMA: Pilot, Sync, Paging, Traffic Codes 8 through 13 Output Power-9W Associated PAE - 17 % Power Gain - 11 dB Package Type 440164 * Adjacent Channel Power885 kHz -45dBc at 30kHz BW 1.25 MHz -55 dBc at 12.5kHz BW 2.25 MHz -55 dBc at 1MHz BW 10 10-1 UPF19090 TM Maximum Ratings Rating Symbol Drain to Source Voltage, Gate connected to Source VDSS Gate to Source Voltage VGSS Total Device Dissipation @ TC = 70C Derate above 70C PD Storage Temperature Range TSTG Operating Junction Temperature TJ Value Unit 65 Volts +15 to -0.5 Volts 130 1.18 Watts W/C -65 to +150 C 200 C Thermal Characteristics Characteristics Symbol Maximum JC Thermal Resistance, Junction to Case Unit 0.85 C/W Electrical DC Characteristics (TC=25C unless otherwise specified) Rating Symbol Min Typ Max Unit Drain to Source Breakdown Voltage (VGS=0, ID=1mA) BVDSS 65 - - Volts IDSS - - 3.0 mA IGSS - - 3.0 A VGS(th) - 3.5 - Volts VGS(Q) 3.0 4.0 5.0 Volts Drain to Source On Voltage (VGS=10V, ID=1A) VDS(on) - 0.12 Forward Transconductance (VDS=10V, ID=5A) Gm Drain to Source Leakage current (VDS=28V, VGS=0) Gate to Source Leakage current (VGS=20V, VDS=0) Threshold Voltage (VDS=10V, ID=1mA) 10 Gate Quiescent Voltage (VDS=26 V, ID=750mA) 10-2 4.5 Volts - S UPF19090 TM AC Characteristics (TC=25C unless otherwise specified) Rating Symbol Min Typ Max Unit Output Capacitance* (VDS=26V, VGS=0V, freq= 1MHz) COSS - 80 - pF Feedback Capacitance (VDS=26V, VGS=0V, freq= 1MHz) CRSS - 4.0 - pF * for reference only, Part is internally matched bot on input and output RF and Functional Tests (In UltraRF Broadband Fixture, TC=25C unless otherwise specified) Rating Symbol Min Typ Max Unit CW Common-Source Amplifier Power Gain VDD=26V, IDQ=750mA, POUT=90W Freq=1990 MHz GPS 10 11 - dB CW Drain Efficiency VDD=26V, POUT=90W, IDQ=750mA Freq=1990 MHz 35 40 - % 3rd Order Intermodulation Distortion VDD=26V, POUT=90W PEP, IDQ=750mA f1=1930 MHz and 1990MHz, Tone Spacing = 100kHz IMD3 - -30 -26 dBc Input Return Loss VDD=26V, POUT=90W, CW IDQ=750mA Freq=1990 MHz IRL - -10 - dB VSWR 10:1 - - Load Mismatch Tolerance VDS=26V, IDQ= 750 mA, POUT=90W, f=1990 MHz 10 10-3 UPF19090 TM Power Output (CW) Vs Drain Efficiency & Power Gain 15 50.0 Test conditions: Vdd=26V, Idq=.75A, Freq=1990MHz 45.0 14 40.0 35.0 13 D_Eff (%) Gp (dB) 30.0 25.0 12 20.0 15.0 Gp(dB) Eff(%) 11 10.0 5.0 10 0.0 5.0 6.3 7.9 10.0 12.6 15.8 20.0 25.1 31.6 39.8 50.1 63.1 79.4 100.0 Pout (W) Power Output (CDMA IS-95) Vs ACPR, Power Gain & Efficiency -30 -35 45 40 Test conditions: Vdd=26V, Idq=.75A, Freq=1990 MHz CDMA(IS-95): Pilot, Sync,Paging, Traffic Codes 8 through 13 35 -40 -45 25 20 -50 15 -55 10 885KHz 10 1.25MHz -60 2.25MHz 5 Eff(%) Gp (dB) -65 0 5 10 15 20 25 Pout (W, AVG) 10-4 30 35 40 50 D_Eff(%)/Gp(dB) ACPR (dBc) 30 UPF19090 TM Power Output (EDGE) Vs ACP & EVM -30 18 Test conditions: Vdd=26V, Idq=.75A, Freq=1990 MHz Modulation: ETSI 300-910 GSM 05.05v.5.5.1 -35 16 -40 14 400KHz 600KHz EVMrms(%) 12 -50 10 -55 8 EVM rms (%) ACP (dBC) -45 -60 6 -65 4 -70 2 -75 -80 0 8 10 13 16 20 25 32 40 50 63 79 100 Pout (W, Avg. EDGE) Power Output (EDGE) Vs EVM, Drain Efficiency & Power Gain 50 18 45 40 14 EVM(%) 35 Gp (dB) 12 D_Eff(%) EVMrms (%) 30 10 25 8 20 D_Eff (%)/Gp(dB) 16 Test conditions: Vdd=26V, Idq=.75A, Freq=1990 MHz Modulation: ETSI 300-910 GSM 05.05v.5.5.1 6 15 4 10 2 10 5 0 0 8 10 13 16 20 25 32 40 50 63 79 100 Pout (W, AVG EDGE) 10-5 UPF19090 TM Power Ouput (W-CDMA) Vs ACPR, Drain Efficiency & Power Gain -20 40.0 -30 5MHz ACPR(dBc) -35 10MHz D_Eff(%) 30.0 Gp (dB) -40 -45 20.0 -50 -55 10.0 -60 -65 0.0 3.2 4.0 5.0 6.3 7.9 10.0 12.6 15.8 20.0 Pout (W, AVG W-CDMA) 10 10-6 25.1 31.6 39.8 50.1 63.1 Gp(dB)/D_Eff(%) -25 50.0 Test conditions: Vdd=26V, Idq=.75A, Freq=1960 MHz W-CDMA(3GPP): 64 DPCH Channel Bandwidth:3.84MHz Offset: 5MHz & 10MHz; 3.84MHz Itg BW TM UPF19090 10 10-7 UPF19090 TM Parts List for Test Fixture UPF19090 Designator Description Qty R1 R2 R3 R4 R6,7,8 Potentiometer, 1K, Panel Mount Resistor, 1/16W, 383, 0603 Resistor, 1/4W, 536, 1206 Resistor, 1/16W, 42.2, 0603 RES, 549, 1/16W, 0603 1 1 1 1 3 C21 C19 C15 C16 C52 C20,23 C4 C55,56 C50,53 C51 C7,8 C6 C17,18 C9,10,22,24,25 C57 CAP .1UF SMT MONO 50V CAP .01UF 1206 SMT MONO 50V CAP 15PF ATC100 110MIL CAP 120PF ATC100 110MIL CAP 12PF ATC100 110MIL CAP .1UF 1206 SMT MONO 50V CAP 10UF 16V TANTALUM CAP LOW ESR 390UF 35V TRIM CAP 0.3-5 PF CAP 10PF ATC100 110MIL CAP,100 PF,0603 PKG, 100 VOLTS CAP,1000 PF,0603 PKG,100 VOLTS CAP,1000 PF,1206 PKG,100 VOLTS CAP,15 PF,0603 PKG, 100 VOLTS Tantalum CAP 22UF, 35V 1 1 1 1 1 2 1 2 2 1 2 1 2 5 1 D1 Diode, Zener, 6.2V, SMT SOT-23 1 WIRE MAGNET #18 1.7 Inch, .5 in ID, 0.5 turn IND 18.5NH SPG,AIR CORE SMT A 1 1 DC Connector HEADER RT>PLZ .1CEN LK 9POS RF Connector CONN,N,FEM,W/.500 SMA FLNG 1 2 PCB, "19090" TEST FIX., .031 TF DK=2.5 50, =.220 @1990MHz 50, =.120 @1990MHz 15.2, =.078 @1990MHz 10, =.040 @1990MHz 6.3, =.073 @1990MHz 5, =.050 @1990MHz 5.5, =.100 @1990MHz 50, =.139 @1990MHz 50, =.265 @1990MHz 1 1 1 1 1 1 1 1 1 1 L3 L2 J1 J2,J3 10 PCB Z1 Z2 Z3 Z4 Z4 Z6 Z7 Z8 Z9 10-8 UPF19090 TM G NOTES: 1 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. B INCHES A MIN MAX .535 .545 13.59 13.84 B .900 .940 22.86 23.88 C .057 .067 1.45 1.71 D .495 .505 12.57 12.83 E .905 .915 22.99 23.24 F .154 .174 3.91 4.42 G .003 .006 0.08 0.15 MIN MAX 2 D C F E PIN 1. DRAIN PIN 2. GATE PIN 3. SOURCE 1 2 3 M NOTES: L 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. K 2. CONTROLLING DIMENSION: INCH. 1 INCHES 3 G 2 MILLIMETERS MIN MAX MIN MAX A 1.335 1.345 33.91 34.16 B 0.535 0.545 13.59 13.84 C 0.154 0.174 3.91 4.42 D 0.495 0.505 12.57 12.83 DIM B E 0.035 0.045 .89 1.14 F 1.095 1.105 27.81 28.07 2X D G 0.900 0.940 22.86 23.88 F H 0.057 0.067 1.45 J 0.003 0.006 .08 .15 K R0.59 R0.69 R14.99 R17.53 A L N H MILLIMETERS A DIM M J N R0.060 REF 45fl REF 0.871 0.889 1.70 R1.52 REF 45fl REF 22.12 22.58 C PIN 1. DRAIN PIN 2. GATE PIN 3. SOURCE E 1 2 10 3 10-9 UPF19090 10 10-10 TM