MMBT3906 Silicon PNP Transistor General Purpose Amp, Surface Mount Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified) Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Total Device Dissipation (Note 2), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW Derate above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/C Thermal Resistance, Junction-to-Ambient (Note 2), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . 375C/W Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Note 1. These are steady-state limits and are based on a maximum junction temperature of +150C. Note 2. Device is mounted on FR-4 PCB 1.6 inch x 1.6 inch x 0.06 inch. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector-Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0, Note 3 40 - - V Collector-Base Breakdown Voltage V(BR)CBO IC = 10A, IE = 0 40 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE = 10A, IC = 0 5 - - V IBL VCE = 30V, VBE = 3V - - 50 nA ICEX VCE = 30V, VBE = 3V - - 50 nA hFE VCE = 1V, IC = 0.1mA 60 - - VCE = 1V, IC = 1mA 80 - - VCE = 1V, IC = 10mA 100 - 300 VCE = 1V, IC = 50mA 60 - - VCE = 1V, IC = 100mA 30 - - IC = 10mA, IB = 1mA - - 0.25 V IC = 50mA, IB = 5mA - - 0.40 V IC = 10mA, IB = 1mA 0.65 - 0.85 V IC = 50mA, IB = 5mA - - 0.95 V Base Cut-Off Current Collector Cutoff Current ON Characteristics DC Current Gain (Note 3) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VCE(sat) VBE(sat) Note 3. Pulse Test: Pulse Width 300s, Duty Cycle 2%. Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit fT IC = 10mA, VCE = 20V, f = 100MHz 250 - - MHz Small-Signal Characteristics Current Gain-Bandwidth Product Output Capacitance Cobo VCB = 5V, IE = 0, f = 100kHz - - 4.5 pF Input Capacitance Cibo VEB = 0.5V, IC = 0, f = 100kHz - - 10 pF Noise Figure NF VCE = 5V, IC = 100A, RS = 1k, f = 10Hz to 15.7kHz - - 4 dB VCC = 3V, VBE = 0.5V, IC = 10mA, IB1 = 1mA - - 35 ns - - 35 ns VCC = 3V, IC = 10mA, IB1 = IB2 = 1mA - - 225 ns - - 75 ns Switching Characteristics Delay Time td Rise Time tr Storage Time ts Fall Time tf Note 3. Pulse Test: Pulse Width 300s, Duty Cycle 2%. .016 (0.48) C B .098 (2.5) Max E .037 (0.95) .074 (1.9) .051 (1.3) .118 (3.0) Max .043 (1.1) .007 (0.2)