MMBT3906 - NTE ELECTRONICS, INC.

MMBT3906

Silicon PNP Transistor

General Purpose Amp, Surface Mount

Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified)

Collector−Emitter Voltage, VCEO 40V......................................................

Collector−Base Voltage, VCBO 40V.......................................................

Emitter−Base Voltage, VEBO 5V..........................................................

Continuous Collector Current, IC200mA..................................................

Total Device Dissipation (Note 2), PD350mW.............................................

Derate above +25C 2.8mW/C....................................................

Thermal Resistance, Junction−to−Ambient (Note 2), RthJA 375C/W..........................

Operating Junction Temperature Range, TJ−55  to +150C.................................

Storage Temperature Range, Tstg −55  to +150C.........................................

Note 1. These are steady−state limits and are based on a maximum junction temperature of +150C.

Note 2. Device is mounted on FR−4 PCB 1.6 inch x 1.6 inch x 0.06 inch.

Electrical Characteristics: (TA = +25C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector−Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0, Note 3 40 − − V

Collector−Base Breakdown Voltage V(BR)CBO IC = 10A, IE = 0 40 − − V

Emitter−Base Breakdown Voltage V(BR)EBO IE = 10A, IC = 0 5− − V

Base Cut−Off Current IBL VCE = 30V, VBE = 3V − − 50 nA

Collector Cutoff Current ICEX VCE = 30V, VBE = 3V − − 50 nA

ON Characteristics

DC Current Gain (Note 3) hFE VCE = 1V, IC = 0.1mA 60 − −

VCE = 1V, IC = 1mA 80 − −

VCE = 1V, IC = 10mA 100 −300

VCE = 1V, IC = 50mA 60 − −

VCE = 1V, IC = 100mA 30 − −

Collector−Emitter Saturation Voltage VCE(sat) IC = 10mA, IB = 1mA − − 0.25 V

IC = 50mA, IB = 5mA − − 0.40 V

Base−Emitter Saturation Voltage VBE(sat) IC = 10mA, IB = 1mA 0.65 −0.85 V

IC = 50mA, IB = 5mA − − 0.95 V

Note 3. Pulse Test: Pulse Width  300s, Duty Cycle  2%.

Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Small−Signal Characteristics

Current Gain−Bandwidth Product fTIC = 10mA, VCE = 20V, f = 100MHz 250 − − MHz

Output Capacitance Cobo VCB = 5V, IE = 0, f = 100kHz − − 4.5 pF

Input Capacitance Cibo VEB = 0.5V, IC = 0, f = 100kHz − − 10 pF

Noise Figure NF VCE = 5V, IC = 100A, RS = 1k,

f = 10Hz to 15.7kHz

− − 4 dB

Switching Characteristics

Delay Time tdVCC = 3V, VBE = 0.5V,

IC = 10mA, IB1 = 1mA

− − 35 ns

Rise Time tr− − 35 ns

Storage Time tsVCC = 3V, IC = 10mA,

IB1 = IB2 = 1mA

− − 225 ns

Fall Time tf− − 75 ns

Note 3. Pulse Test: Pulse Width  300s, Duty Cycle  2%.

.098

(2.5)

Max

.074 (1.9)

.118 (3.0) Max .051

(1.3)

.043 (1.1)

.007 (0.2)

.016 (0.48)

.037 (0.95)