E2502H48 - TriQuint Semiconductor

Data Sheet, Rev. 1

February 2003

E2500-Type 2.5 Gb/s Electroabsorption Modulated Isolated

Laser Module (EM-ILM) for Ultralong-Reach Applications

TriQuint Optoelectronics

The E2500 EM-ILM, the newest generation of the award-

winning 266-Type EM-ILM, features an integrated modulator

and laser chip, and provides a compact, cost-effective solu-

tion for extended-reach transmissions.

Features

■Integrated electroabsorptive modulator

■1.5 µm wavelength

■Characterized for 2.5 Gb/s operation

■Very low dispersion penalty over 600 km

■Low modulation voltage

■Temperature stabilized

■Wavelengths selectable to ITU-T standards

■Ultrastable wavelength aging performance for

DWDM systems

2.5 Gb/s Laser Module

E2500

riQ

uint

SEMICONDUCTOR

Applications

■SONET/SDH extended-reach applications

■High-capacity DWDM system applications

■High-speed data communications

■Digitized video

Description

The E2500-Type EM-ILM is a 1.5 µm laser with an

integrated electroabsorptive modulator packaged in

an industry-standard, 14-pin butterfly package. The

device has been designed to be used in 2.5 Gb/s

extended-reach applications where the distances

between regenerators is in the range of 150 km—

1000 km. To boost the transmitter power high enough

to reach the receiver, the device typically is coupled

with an erbium-doped fiber amplifier (EDFA) such as

the TriQuint 1724 EDFA. The standard product is

specified for use up to 360 km (E2505 Series) and

600 km (E2502 Series).

The E2500 EM-ILM can replace external modulators

in many applications. The nominal input impedance

for the modulator is 50 Ω. By integrating the

modulator with the laser chip, the device offers a

compact, cost-effective solution for extended-reach

transmission applications. It can also be specified for

WDM applications where wavelength selection is

required. TriQuint is providing devices compatible

with the ITU-T wavelength standards.

2For additional information and latest specifications, see our website: www.triquint.com

Data Sheet, Rev. 1

February 2003

Isolated Laser Module (EM-ILM)

E2500-Type 2.5 Gb/s Electroabsorption Modulated

Description (continued)

The package also contains a thermoelectric cooler,

thermistor, back-facet monitor, and an optical isolator.

This device exhibits excellent wavelength stability,

supporting operation at 100 Gb/s channel spacing,

assuming an end-of-life condition of < ±100 pm over 20

years for wavelength aging, with very low FIT rates.

Wavelength stabilization schemes are not required in

DWDM systems of this type, using TriQuint’s E2500-

Type EM-ILM.

The E2500-Type EM-ILM is qualified for DWDM appli-

cations to Telcordia ™ TA-TSY-000468.

Module Characteristics

1-891a (F)

Figure 1. E2500 EM-ILM Schematic

Pin Information

Table 1. Pin Assignments

Package Type 14-pin butterfly with internal isolator

Fiber Standard single mode

Connector ST

RF Input 50 Ω nominal

Bit Rate 2.5 Gb/s

CASE OR

PACKAGE

GROUNDS

10 k

@ 25 °C

Ω

ISOLATOR

TEC

(

−

)(+) (

−

)(+) (+)

(

−

)(+)

1234567

141312111098

NOMINAL

Ω

IMPEDANCE

Pin Number Description

1 Thermistor

2 Thermistor

3 Laser anode

4 Monitor anode

5 Monitor cathode

6TEC (+)

7TEC (–)

8 Case ground

9 Case ground

10 Case ground

11 Laser modulator ground

12 Modulator anode (–)/50 Ω RF input

13 Laser/modulator ground

14 Case ground

Data Sheet, Rev. 1

February 2003 Isolated Laser Module (EM-ILM)

E2500-Type 2.5 Gb/s Electroabsorption Modulated

For additional information and latest specifications, see our website: www.triquint.com 3

Absolute Maximum Ratings

Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are abso-

lute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess

of those given in the operations section of the data sheet. Exposure to absolute maximum ratings for extended

periods can adversely affect device reliability.

Characteristics

Parameter Conditions Limit Unit

Laser Diode Reverse Voltage CW 2 V

Laser Diode Forward Current CW 150 mA

Optical Output Power CW 10 mW

Modulator Reverse Voltage — 5 V

Modulator Forward Voltage — 1 V

Monitor Diode Reverse Voltage — 10 V

Monitor Diode Forward Current — 1 mA

Storage Temperature Range — –40 to +85 °C

Operating Temperature Range — 0 to 70 °C

Table 2. Optical and Electrical Specifications

Parameter Symbol Conditions Min Max Unit

Laser: Laser TOP (temperature of laser submount) = 15 °C to 35 °C, except where noted.

Threshold Current (BOL) ITH TLASER CHIP = TOP 535 mA

Forward Voltage VFIf = IOP @ TOP — 2.0 V

Operating Current IOP TLASER CHIP = TOP 50 100 mA

Threshold Power PTH TLASER CHIP = TOP

If = ITH, VM = 0 V

—80µW

Fiber Output Power (peak) PPK TLASER CHIP = TOP

VM = 0 V, If = IOP

1— dBm

Peak Wavelength (wavelength can be

specified to the ITU-T wavelength chan-

nels)

λ0 VM = 0 V

TLASER CHIP = TOP,

If = IOP

1530 1563 nm

Side-mode Suppression Ratio SMSR VM = 0 V, If = IOP,TOP 30 — dB

Time Resolved Spectroscopy (chirp),

E2505 Series

TRSP-P 2.5 Gb/s

VLOW = –1.5 V to –3.0 V

VHIGH = 0 V

If = IOP @ TOP

—0.25 Å

Time Resolved Spectroscopy (chirp),

E2502 Series

TRSP-P 2.5 Gb/s

VLOW = –1.5 V to –3.0 V,

VHIGH = –0.3 V

If = IOP @ TOP

—0.15 Å

Dispersion Penalty DP 2.5 Gb/s

360 km (E2505)

600 km (E2502)

VLOW = –1.5 V to –3.0 V

VHIGH = 0 V (E2505), –0.3 V (E2502)

IF = IOP @ TOP

—2.0dB

Data Sheet, Rev. 1

February 2003

Isolated Laser Module (EM-ILM)

E2500-Type 2.5 Gb/s Electroabsorption Modulated

4For additional information and latest specifications, see our website: www.triquint.com

Characteristics (continued)

* Operation at a DT of 70 °C – TSET is guaranteed, where TSET is the laser temperature required to achieve the required ITU wavelength,

over life, in a DWDM system (TSET range is 15 °C to 35 °C). In a non-WDM application, TSET is 25 °C.

Modulator

Extinction Ratio ERRF VM = 0 V to –3.0 V, 2.5 Gb/s 10 — dB

RF Return Loss (0 GHz to 2 GHz) S11 VM = –VPP/2

If = IOP

10 — dB

RF Return Loss (2 GHz to 3 GHz) S11 VM = –VPP/2

If = IOP

7—dB

RF Return Loss (3 GHz to 5 GHz) S11 VM = –VPP/2

If = IOP

3—dB

–3 dB Bandwidth BW VM = –VPP/2

If = IOP

3.5 — GHz

Modulator Current @ VM = 0 V, If = 50 mA ———15mA

Rise/Fall Time (20% to 80%) tR/tF— — 125 ps

Monitor Diode

Monitor Current IBD TLASER CHIP = TOP

VBD = 5 V, If = IOP

40 1100 µA

Dark Current IDTLASER CHIP = TOP, VBD = –5 V —0.1 µA

Capacitance C VBD = 5 V, f = 1 MHz —25 pF

Thermistor

Resistance RTHERM T = 25 °C 9.5 10.5 kΩ

Thermistor Current ITC — 10 100 µA

Thermistor B Constant B — 3700 4100 —

Thermoelectric Cooler

TEC Current ITEC TLASER CHIP = 15 °C

TCASE = 70 °C

— 1.3 A

TEC Voltage VTEC TLASER CHIP = 15 °C

TCASE = 70 °C

— 2.6 V

TEC Power PTEC TLASER CHIP = 15 °C

TCASE = 70 °C

— 3.0 W

TEC Capacity ∆TTCASE = 70 °C*— °C

Laser Module

Optical Isolation — TCASE = 0 °C to 65 °C30 — dB

Table 2. Optical and Electrical Specifications (continued)

Parameter Symbol Conditions Min Max Unit

Data Sheet, Rev. 1

February 2003 Isolated Laser Module (EM-ILM)

E2500-Type 2.5 Gb/s Electroabsorption Modulated

For additional information and latest specifications, see our website: www.triquint.com 5

Characteristics (continued)

1-500(C).d

Figure 2. Typical Eye Pattern at 2.5 Gb/s

184.5 mV

I = 50

V = –1.04 + 2.08 pp

P= –0.5 dBm

–15.5 mV

20 mV

/div

91.65 ns 100 ps/div 92.65 ns

Data Sheet, Rev. 1

February 2003

Isolated Laser Module (EM-ILM)

E2500-Type 2.5 Gb/s Electroabsorption Modulated

6For additional information and latest specifications, see our website: www.triquint.com

Characteristics (continued)

1-930(C).c

Figure 3. BER vs. Optical Power (Typical)

0 km

107 km

122 km

202 km

337 km

640 km

–37 –36 –35 –34 –33 –32 –31 –30 –29 –28

–38

T = 25 PC

IBIAS (LASER) = 80 mA

VBIAS (MOD) = –1.0 Vdc

VPP (MOD) = 2.0 V

POUT = 1.9 dBm (PULSED)

EXT. RATIO (RF) = 11.4 dB

TEST CONDITIONS:

10–12

10–11

10–10

10–9

10–8

10–7

10–6

10–5

OPTICAL POWER (dBm)

BER

Data Sheet, Rev. 1

February 2003 Isolated Laser Module (EM-ILM)

E2500-Type 2.5 Gb/s Electroabsorption Modulated

For additional information and latest specifications, see our website: www.triquint.com 7

Outline Diagram

1-520.h (F)

0.180 (4.56)

HEAT SINK

0.215 (5.45)

0.056 (1.42)

0.030 (0.75)

59.06 (1500.00)

MIN

0.10

(2.5)

0.260 (6.60)

0.215

(5.47)

REF

0.036

(0.91)

PIN 1

0.078 (1.98)

0.100 (2.54) TYP

0.105 (2.67) DIA

TYP (4) PLACES

0.020 (0.51) TYP

0.500 (12.70)

MIN

STRAIN

RELIEF

PIN 14

TRADEMARK, CODE, LASER SERIAL NUMBER,

AND DATE CODE IN APPROX. AREA SHOWN

0.20

(5.08

)

1.025 (26.04)

0.10 ± 0.002

(2.54 ± 0.051)

0.213 (5.40) TYP

0.500

(12.70)

0.350

(8.89)

0.605

(15.37)

MAX

2.03 (51.6)

0.863 (21.91)

0.575 (14.61)

0.820 (20.83)

0.700 (17.78)

0.365

(9.27)

MAX

1.180 (29.97)

Data Sheet, Rev. 1

February 2003

Isolated Laser Module (EM-ILM)

E2500-Type 2.5 Gb/s Electroabsorption Modulated

8For additional information and latest specifications, see our website: www.triquint.com

Ordering Information

Table 3. Ordering Information

Parameter Device Description

ITU-T Wave-

length (nm) Frequency (THz)

E2505 Series

360 km, Standard Fiber

E2505 Series

600 km, Standard Fiber

Code Comcode Code Comcode

1530.37 195.9 E2505H59 108319146 E2502H59 108319112

1531.15 195.8 E2505H58 108319138 E2502H58 108319104

1531.90 195.7 E2505H57 108319120 E2502H57 108319096

1532.68 195.6 E2505H56 108031683 E2502H56 108030990

1533.46 195.5 E2505H55 108031675 E2502H55 108030982

1534.25 195.4 E2505H54 108031667 E2502H54 108030974

1535.04 195.3 E2505H53 108031659 E2502H53 108030966

1535.82 195.2 E2505H52 108031642 E2502H52 108030958

1536.61 195.1 E2505H51 108031634 E2502H51 108030941

1537.4 195.0 E2505H50 108031626 E2502H50 108031006

1538.19 194.9 E2505H49 108031618 E2502H49 108030925

1538.98 194.8 E2505H48 108031600 E2502H48 108030917

1539.77 194.7 E2505H47 108031592 E2502H47 108030909

1540.56 194.6 E2505H46 108031584 E2502H46 108030891

1541.35 194.5 E2505H45 108031576 E2502H45 108030883

1542.14 194.4 E2505H44 108031568 E2502H44 108030875

1542.94 194.3 E2505H43 108031550 E2502H43 108030867

1543.73 194.2 E2505H42 108031543 E2502H42 108030859

1544.53 194.1 E2505H41 108031535 E2502H41 108030842

1545.32 194.0 E2505H40 108031527 E2502H40 108030933

1546.12 193.9 E2505H39 108031519 E2502H39 108030826

1546.92 193.8 E2505H38 108031501 E2502H38 108030818

1547.72 193.7 E2505H37 108031196 E2502H37 108030800

1548.51 193.6 E2505H36 108031188 E2502H36 108030792

1549.31 193.5 E2505H35 108031170 E2502H35 108030784

1550.12 193.4 E2505H34 108031162 E2502H34 108030776

1550.92 193.3 E2505H33 108031154 E2502H33 108030768

1551.72 193.2 E2505H32 108031147 E2502H32 108030750

1552.52 193.1 E2505H31 108031139 E2502H31 108030743

1553.33 193.0 E2505H30 108031493 E2502H30 108030834

1554.13 192.9 E2505H29 108031113 E2502H29 108030727

1554.94 192.8 E2505H28 108031105 E2502H28 108030719

1555.75 192.7 E2505H27 108031097 E2502H27 108030701

1556.55 192.6 E2505H26 108031089 E2502H26 108030693

1557.36 192.5 E2505H25 108031071 E2502H25 108030685

1558.17 192.4 E2505H24 108031063 E2502H24 108030677

1558.98 192.3 E2505H23 108031055 E2502H23 108030669

1559.79 192.2 E2505H22 108031048 E2502H22 108030651

1560.61 192.1 E2505H21 108031030 E2502H21 108030644

1561.42 192.0 E2505H20 108031121 E2502H20 108030735

1562.23 191.9 E2505H19 108031022 E2502H19 108030636

1530 to 1565 — E2505H 108031691 E2502H 108031014

Data Sheet, Rev. 1

February 2003 Isolated Laser Module (EM-ILM)

E2500-Type 2.5 Gb/s Electroabsorption Modulated

For additional information and latest specifications, see our website: www.triquint.com 9

Related Product Information

Electrostatic Discharge

CAUTION:This device is susceptible to damage as a result of electrostatic discharge. Take proper precau-

tions during both handling and testing. Follow guidelines such as JEDEC Publication No. 108-A

(Dec. 1988).

TriQuint Semiconductor employs a human-body model (HBM) for ESD-susceptibility testing and protection-design

evaluation. ESD voltage thresholds are dependent on the critical parameters used to define the model. A standard

HBM (resistance = 1.5 kΩ, capacitance = 100 pF) is widely used and can be used for comparison purposes.

Table 4. Related Product Information

Description Part Number Document Number

1.5 µm EDFA 1724-Type DS00-123-1

1.5 µm Digital DFB Laser D2500-Type DS00-166-1

1.3 µm Digital DFB Laser D2300-Type DS00-167-1

Data Sheet, Rev. 1

February 2003

Isolated Laser Module (EM-ILM)

E2500-Type 2.5 Gb/s Electroabsorption Modulated

Additional Information

For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint:

Web: www.triquint.com Tel: (503) 615-9000

E-mail: info_opto@tqs.com Fax: (503) 615-8902

For technical questions and additional information on specific applications:

E-mail: info_opto@tqs.com

The information provided herein is believed to be reliable; TriQuint assumes no liability for inaccuracies or omissions. TriQuint assumes no responsibility for the use of this information, and all

such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are

implied or granted to any third party.

TriQuint does not authorize or warranty any TriQuint product for use in life-support devices and/or systems.

DS01-281-1 Revision 1.1, February, 2003

Laser Safety Information

Class IIIb Laser Product

FDA/CDRH Class IIIb laser product. All versions are Class IIIb laser products per CDRH, 21 CFR 1040 Laser Safety

requirements. All versions are classified Class 3B laser products consistent with IEC ® 60825-1: 1993. This device

family has been classified with the FDA under accession number 8720010. Measurements were made to classify

the product per IEC 60825-1: 1993.

This product complies with 21 CFR 1040.10 and 1040.11.

Single-mode connector.

Wavelength = 1.5 µm.

Maximum power = 10 mW.

Because of size constraints, laser safety labeling is not affixed to the module but attached to the outside of the

shipping carton.

Product is not shipped with power supply.

Caution: Use of controls, adjustments, and procedures other than those specified herein may result in

hazardous laser radiation exposure.

INVISIBLE LASER RADIATION EMITTED FROM END OF FIBER OR CONNECTOR

Avoid exposure to beam

Class IIIb Laser Product

per CDRH, 21 CFR 1040

Max. Output:10 mW Wavelength: 1.5

DANGER

INVISIBLE LASER RADIATION

IS EMITTED FROM THE END

OF FIBER OR CONNECTOR

Avoid direct exposure to beam

Do not view beam directly with

optical instruments

Telcordia is a trademark of Telcordia Technologies, Inc.