Radiation Hardened, High Performance Industry Standard Single-Ended Current Mode PWM Controller ISL78840ASRH, ISL78841ASRH, ISL78843ASRH, ISL78845ASRH The ISL7884xASRH is a high performance, radiation hardened Features drop-in replacement for the popular 28C4x and 18C4x PWM controllers suitable for a wide range of power conversion applications including boost, flyback, and isolated output configurations. Its fast signal propagation and output switching characteristics make this an ideal product for existing and new designs. * Electrically Screened to DLA SMD # 5962-07249 Features include up to 13.2V operation, low operating current, 90A typical start-up current, adjustable operating frequency to 1MHz, and high peak current drive capability with 50ns rise and fall times. * 35ns Propagation Delay Current Sense to Output PART NUMBER RISING UVLO MAX. DUTY CYCLE ISL78840ASRH 7.0 100% ISL78841ASRH 7.0 50% ISL78843ASRH 8.4V 100% ISL78845ASRH 8.4V 50% * QML Qualified Per MIL-PRF-38535 Requirements * 1A MOSFET Gate Driver * 90A Typical Start-up Current, 125A Max * Fast Transient Response with Peak Current Mode Control * 9V to 13.2V Operation * Adjustable Switching Frequency to 1MHz * 50ns Rise and Fall Times with 1nF Output Load * Trimmed Timing Capacitor Discharge Current for Accurate Deadtime/Maximum Duty Cycle Control * 1.5MHz Bandwidth Error Amplifier * Tight Tolerance Voltage Reference Over Line, Load and Temperature Specifications for Rad Hard QML devices are controlled by the Defense Logistics Agency Land and Maritime (DLA). The SMD numbers listed in the ordering information must be used when ordering. Detailed Electrical Specifications for the ISL788xASRH are contained in SMD 5962-07249. A "hot-link" is provided on our website for downloading. * 3% Current Limit Threshold * Pb-Free Available (RoHS Compliant) Applications * Current Mode Switching Power Supplies * Isolated Buck and Flyback Regulators * Boost Regulators * Direction and Speed Control in Motors * Control of High Current FET Drivers Pin Configurations ISL78840ASRH, ISL78841ASRH, ISL78843ASRH, ISL78845ASRH (8 LD SBDIP) TOP VIEW ISL78840ASRH, ISL78841ASRH, ISL78843ASRH, ISL78845ASRH (8 LD FLATPACK) TOP VIEW COMP 1 8 VREF FB 2 7 VDD CS 3 6 OUT RTCT April 5, 2012 FN6991.2 4 5 1 GND COMP 1 8 VREF FB 2 7 VDD CS 3 6 OUT RTCT 4 5 GND CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas Inc. 2009, 2010, 2012. All Rights Reserved Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries. All other trademarks mentioned are the property of their respective owners. ISL78840ASRH, ISL78841ASRH, ISL78843ASRH, ISL78845ASRH Ordering Information ORDERING NUMBER PART NUMBER TEMP. RANGE (C) PACKAGE (Pb-Free) PKG. DWG. # ISL78840ASRHVX/SAMPLE ISL78840ASRHVX/SAMPLE -55 to +125 Die ISL78840ASRHF/PROTO ISL78840ASRHF/PROTO (Notes 1, 2) -55 to +125 8 Ld Flatpack 5962R0724901QXC ISL78840ASRHQF (Notes 1, 2) -55 to +125 8 Ld Flatpack K8.A 5962R0724901VXC ISL78840ASRHVF (Notes 1, 2) -55 to +125 8 Ld Flatpack K8.A K8.A ISL78840ASRHD/PROTO ISL78840ASRHD/PROTO (Notes 1, 2) -55 to +125 8 Ld SBDIP D8.3 5962R0724901QPC ISL78840ASRHQD (Notes 1, 2) -55 to +125 8 Ld SBDIP D8.3 5962R0724901VPC ISL78840ASRHVD (Notes 1, 2) -55 to +125 8 Ld SBDIP D8.3 ISL78841ASRHVX/SAMPLE ISL78841ASRHVX/SAMPLE -55 to +125 Die ISL78841ASRHF/PROTO ISL78841ASRHF/PROTO (Notes 1, 2) -55 to +125 8 Ld Flatpack K8.A 5962R0724902QXC ISL78841ASRHQF (Notes 1, 2) -55 to +125 8 Ld Flatpack K8.A 5962R0724902VXC ISL78841ASRHVF (Notes 1, 2) -55 to +125 8 Ld Flatpack K8.A ISL78841ASRHD/PROTO ISL78841ASRHD/PROTO (Notes 1, 2) -55 to +125 8 Ld SBDIP D8.3 5962R0724902QPC ISL78841ASRHQD (Notes 1, 2) -55 to +125 8 Ld SBDIP D8.3 5962R0724902VPC ISL78841ASRHVD (Notes 1, 2) -55 to +125 8 Ld SBDIP D8.3 ISL78843ASRHVX/SAMPLE ISL78843ASRHVX/SAMPLE -55 to +125 Die ISL78843ASRHF/PROTO ISL78843ASRHF/PROTO (Notes 1, 2) -55 to +125 8 Ld Flatpack K8.A 5962R0724903QXC ISL78843ASRHQF (Notes 1, 2) -55 to +125 8 Ld Flatpack K8.A 5962R0724903VXC ISL78843ASRHVF (Notes 1, 2) -55 to +125 8 Ld Flatpack K8.A ISL78843ASRHD/PROTO ISL78843ASRHD/PROTO (Notes 1, 2) -55 to +125 8 Ld SBDIP D8.3 5962R0724903QPC ISL78843ASRHQD (Notes 1, 2) -55 to +125 8 Ld SBDIP D8.3 5962R0724903VPC ISL78843ASRHVD (Notes 1, 2) -55 to +125 8 Ld SBDIP D8.3 ISL78845ASRHVX/SAMPLE ISL78845ASRHVX/SAMPLE -55 to +125 Die ISL78845ASRHF/PROTO ISL78845ASRHF/PROTO (Notes 1, 2) -55 to +125 8 Ld Flatpack K8.A 5962R0724904QXC ISL78845ASRHQF (Notes 1, 2) -55 to +125 8 Ld Flatpack K8.A 5962R0724904VXC ISL78845ASRHVF (Notes 1, 2) -55 to +125 8 Ld Flatpack K8.A ISL78845ASRHD/PROTO ISL78845ASRHD/PROTO (Notes 1, 2) -55 to +125 8 Ld SBDIP D8.3 5962R0724904QPC ISL78845ASRHQD (Notes 1, 2) -55 to +125 8 Ld SBDIP D8.3 5962R0724904VPC ISL78845ASRHVD (Notes 1, 2) -55 to +125 8 Ld SBDIP D8.3 NOTES: 1. These Intersil Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations. 2. For Moisture Sensitivity Level (MSL), please see device information page for ISL78840ASRH, ISL78841ASRH, ISL78843ASRH, ISL78845ASRH. For more information on MSL please see techbrief TB363. 2 FN6991.2 April 5, 2012 Functional Block Diagram + - VREF VREF 5V START/STOP UV COMPARATOR ENABLE VDD OK VREF FAULT +- + 2.5V A 4.65V 4.80V +- 3 VREF UV COMPARATOR GND A = 0.5 PWM COMPARATOR +- CS 100mV 2R 1.1V CLAMP + - FB VF TOTAL = 1.15V ERROR AMPLIFIER + - ONLY ISL78841A, ISL78845A R Q T COMP Q OUT S Q 36k R Q RESET DOMINANT VREF 100k 2.9V 1.0V ON 150k OSCILLATOR COMPARATOR <10ns + RTCT 8.4mA ON CLOCK FN6991.2 April 5, 2012 ISL78840ASRH, ISL78841ASRH, ISL78843ASRH, ISL78845ASRH VDD Typical Application - 48V Input Dual Output Flyback +3.3V C21 T1 + C16 R21 VIN+ R3 + C15 +1.8V C4 CR4 C2 C17 4 CR2 C5 + C22 + C20 C19 RETURN CR6 R1 36V TO 75V R16 R17 C6 C1 C3 R18 R19 U2 Q1 C14 R28 R4 R22 C13 R15 U3 VIN- R27 R20 U4 R26 COMP VREF CS V DD FB OUT RTCT GND ISL7884xASRH R6 R10 CR1 Q3 C12 VR1 C8 R13 C11 FN6991.2 April 5, 2012 ISL78840ASRH, ISL78841ASRH, ISL78843ASRH, ISL78845ASRH CR5 Typical Application - Boost Converter C10 CR1 L1 VIN+ +VOUT + C2 C3 5 RETURN R4 Q1 R5 R9 C9 C1 R1 R2 U1 FB CS C4 RTCT ISL7884xASRH COMP R7 VREF VIN+ VDD OUT GND R3 C5 C7 VIN- C6 C8 R6 FN6991.2 April 5, 2012 ISL78840ASRH, ISL78841ASRH, ISL78843ASRH, ISL78845ASRH R8 ISL78840ASRH, ISL78841ASRH, ISL78843ASRH, ISL78845ASRH Absolute Maximum Ratings Thermal Information Supply Voltage VDD Without Ion Beam . . . . . . . . . . . .GND -0.3V to +30.0V Supply Voltage VDD Under Ion Beam . . . . . . . . . . . . . .GND -0.3V to +14.7V OUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . GND -0.3V to VDD + 0.3V Signal Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . GND -0.3V to 6.0V Peak GATE Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A ESD Rating Human Body Model (Tested per JESD22-A114E) . . . . . . . . . . . . . . . . 2kV Machine Model (Tested per JESD22-A115-A) . . . . . . . . . . . . . . . . . 200V Latch Up (Tested per JESD-78B; Class 2, Level A) . . . . . . . . . . . . . . 100mA Thermal Resistance (Typical) JA (C/W) JC (C/W) 8 Ld Flatpack Package (Notes 3, 5) 140 15 8 Ld SBDIP Package (Notes 4, 5) 98 15 Maximum Junction Temperature (Plastic Package) . . . . . . . . . . . .+150C Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . .-65C to +150C Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see link below http://www.intersil.com/pbfree/Pb-FreeReflow.asp Recommended Operating Conditions Maximum Total Dose (Dose Rate = 50 - 100radSi/s) . . . . . . . . . . . . . . . . . . . . . 100 krads (Si) SEB (No Burnout) (Note 6) . . . . . . . . . . . . . . . . . . . . . . . . . . 80Mev/mg/cm2 SEL (No latchup) (Note 6) . . . . . . . . . . . . . . . . . . . . . . . . . . 80Mev/mg/cm2 SET (Regulated VOUT within 3%) (Note 9) . . . . . . . . . . . . 40Mev/mg/cm2 Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-55C to +125C Supply Voltage (Typical Note 6) . . . . . . . . . . . . . . . . . . . . . . . . . 9V to 13.2V Radiation Information CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and result in failures not covered by warranty. NOTES: 3. JA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details. 4. JA is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief TB379 for details. 5. For JC, the "case temp" location is the center of the ceramic on the package underside. 6. All voltages are with respect to GND. Electrical Specifications Recommended operating conditions unless otherwise noted. Refer to Block Diagram and Typical Application schematic on page 3 and page 4. VDD = 13.2V, RT = 10k, CT = 3.3nF, TA = -55 to +125C. Typical values are at TA = +25C. Boldface limits apply over the operating temperature range, -55 to +125C. MIN (Note 10) TYP MAX (Note 10) UNITS ISL78840A, ISL78841A 6.5 7.0 7.5 V ISL78843A, ISL78845A 8.0 8.4 9.0 V ISL78840A, ISL78841A 6.1 6.6 6.9 V ISL78843A, ISL78845A 7.3 7.6 8.0 V Hysteresis ISL78840A, ISL78841A - 0.4 - V ISL78843A, ISL78845A - 0.8 - V Start-up Current, IDD VDD < START Threshold - 90 125 A VDD < START Threshold, 100krad - 300 500 A Operating Current, IDD (Note 7) - 2.9 4.0 mA Operating Supply Current, ID Includes 1nF GATE loading - 4.75 5.5 mA 4.925 5.000 5.050 V - 5 - mV Current Limit, Sourcing -20 - - mA Current Limit, Sinking 5 - - mA VCS = 1V -1.0 - 1.0 A 0.97 1.00 1.03 V 0 < VCS < 910mV, VFB = 0V 2.75 2.82 3.15 V/V - 35 55 ns PARAMETER TEST CONDITIONS UNDERVOLTAGE LOCKOUT START Threshold STOP Threshold REFERENCE VOLTAGE Overall Accuracy Over line (VDD = 9V to 13.2V), load of 1mA and 10mA, temperature Long Term Stability TA = +125C, 1000 hours (Note 8) CURRENT SENSE Input Bias Current Input Signal, Maximum Gain, ACS = VCOMP/VCS CS to OUT Delay 6 FN6991.2 April 5, 2012 ISL78840ASRH, ISL78841ASRH, ISL78843ASRH, ISL78845ASRH Electrical Specifications Recommended operating conditions unless otherwise noted. Refer to Block Diagram and Typical Application schematic on page 3 and page 4. VDD = 13.2V, RT = 10k, CT = 3.3nF, TA = -55 to +125C. Typical values are at TA = +25C. Boldface limits apply over the operating temperature range, -55 to +125C. (Continued) PARAMETER TEST CONDITIONS MIN (Note 10) TYP MAX (Note 10) UNITS ERROR AMPLIFIER Open Loop Voltage Gain (Note 8) - 90 - dB Unity Gain Bandwidth (Note 8) - 1.5 - MHz Reference Voltage, VREF VFB = VCOMP 2.475 2.500 2.530 V FB Input Bias Current, FBIIB VFB = 0V -1.0 -0.2 1.0 A COMP Sink Current VCOMP = 1.5V, VFB = 2.7V 1.0 - - mA COMP Source Current VCOMP = 1.5V, VFB = 2.3V -0.4 - - mA COMP VOH VFB = 2.3V 4.80 - VREF V COMP VOL VFB = 2.7V 0.4 - 1.0 V PSRR Frequency = 120Hz, VDD = 9V to 13.2V (Note 8) - 80 - dB 48 51 53 kHz OSCILLATOR Frequency Accuracy Initial, TA = +25C Frequency Variation with VDD TA= +25C, (f13.2V - f9V)/f12V - 0.2 1.0 % Temperature Stability (Note 8) - 5 - % Amplitude, Peak-to-Peak Static Test - 1.75 - V RTCT Discharge Voltage (Valley Voltage) Static Test - 1.0 - V Discharge Current RTCT = 2.0V 6.5 7.8 8.5 mA OUTPUT Gate VOH VDD to OUT, IOUT = -100mA - 1.0 2.0 V Gate VOL OUT to GND, IOUT = 100mA - 1.0 2.0 V Peak Output Current COUT = 1nF (Note 8) - 1.0 - A Rise Time COUT = 1nF - 35 60 ns Fall Time COUT = 1nF - 20 40 ns OUTPUT OFF state leakage VDD = 5V - - 50 A PWM Maximum Duty Cycle (ISL78840A, ISL78843A) COMP = VREF 94.0 96.0 - % Maximum Duty Cycle (ISL78841A, ISL78845A) COMP = VREF 47.0 48.0 - % Minimum Duty Cycle COMP = GND - - 0 % NOTES: 7. This is the VDD current consumed when the device is active but not switching. Does not include gate drive current. 8. Limits established by characterization and are not production tested. 9. SEE tests performed with VREF bypass capacitor of 0.22F and FSW = 200kHz. SEB/L tests done on a standalone open loop configuration. SET tests done in a closed loop configuration. For SEL no hard latch requiring manual intervention were observed. For more information see: ISL7884xASRH SEE Test Report. 10. Parameters with MIN and/or MAX limits are 100% tested at +25C, unless otherwise specified. Temperature limits established by characterization and are not production tested. 7 FN6991.2 April 5, 2012 ISL78840ASRH, ISL78841ASRH, ISL78843ASRH, ISL78845ASRH Typical Performance Curves NORMALIZED FREQUENCY 1.01 1.001 NORMALIZED VREF 1.000 1.00 0.99 0.98 -60 -40 -20 0 20 40 60 80 0.999 0.998 0.997 0.996 0.995 -60 100 120 140 TEMPERATURE (C) 0 20 40 60 80 TEMPERATURE (C) 100 120 140 103 FREQUENCY (kHz) 1.001 NORMALIZED EA REFERENCE -20 FIGURE 2. REFERENCE VOLTAGE vs TEMPERATURE FIGURE 1. FREQUENCY vs TEMPERATURE 1.000 0.998 0.997 0.996 -60 -40 -20 0 20 40 60 80 100 120 140 220pF 330pF 470pF 1.0nF 10 2.2nF 3.3nF 4.7nF 6.8nF 1 -40 100pF 100 1 TEMPERATURE (C) Pin Descriptions RTCT - This is the oscillator timing control pin. The operational frequency and maximum duty cycle are set by connecting a resistor, RT, between VREF and this pin and a timing capacitor, CT, from this pin to GND. The oscillator produces a sawtooth waveform with a programmable frequency range up to 2.0MHz. The charge time, tC, the discharge time, tD, the switching frequency, f, and the maximum duty cycle, DMAX, can be approximated from Equations 1 through 4: (EQ. 1) COMP - COMP is the output of the error amplifier and the input of the PWM comparator. The control loop frequency compensation network is connected between the COMP and FB pins. FB - The output voltage feedback is connected to the inverting input of the error amplifier through this pin. The non-inverting input of the error amplifier is internally tied to a reference voltage. CS - This is the current sense input to the PWM comparator. The range of the input signal is nominally 0V to 1.0V and has an internal offset of 100mV. GND - GND is the power and small signal reference ground for all functions. 0.008 RT - 3.83 t D - RT CT In --------------------------------------------- 0.008 RT - 1.71 (EQ. 2) f = 1 (tC + tD) (EQ. 3) D = tC f (EQ. 4) The formulae have increased error at higher frequencies due to propagation delays. Figure 4 may be used as a guideline in selecting the capacitor and resistor values required for a given switching frequency for the ISL78841ASRH, ISL78845ASRH. The value for the ISL78840ASRH, ISL78843ASRH will be twice that shown in Figure 4. 8 100 FIGURE 4. RESISTANCE FOR CT CAPACITOR VALUES GIVEN FIGURE 3. EA REFERENCE vs TEMPERATURE t C 0.533 RT CT 10 RT (k) OUT - This is the drive output to the power switching device. It is a high current output capable of driving the gate of a power MOSFET with peak currents of 1.0A. This GATE output is actively held low when VDD is below the UVLO threshold. VDD - VDD is the power connection for the device. The total supply current will depend on the load applied to OUT. Total IDD current is the sum of the operating current and the average output current. Knowing the operating frequency, f, and the MOSFET gate charge, Qg, the average output current can be calculated from Equation 5: I OUT = Qg x f (EQ. 5) FN6991.2 April 5, 2012 ISL78840ASRH, ISL78841ASRH, ISL78843ASRH, ISL78845ASRH To optimize noise immunity, bypass VDD to GND with a ceramic capacitor as close to the VDD and GND pins as possible. VREF - The 5.00V reference voltage output. +1.0/-1.5% tolerance over line, load and operating temperature. The recommended bypass to GND cap is in the range 0.1F to 0.22F. A typical value of 0.15F can be used. Functional Description Features The ISL7884xASRH current mode PWM makes an ideal choice for low-cost flyback and forward topology applications. With its greatly improved performance over industry standard parts, it is the obvious choice for new designs or existing designs which require updating. Oscillator The ISL7884xASRH has a sawtooth oscillator with a programmable frequency range to 2MHz, which can be programmed with a resistor from VREF and a capacitor to GND on the RTCT pin. (Please refer to Figure 4 for the resistor and capacitance required for a given frequency). Soft-Start Operation Soft-start must be implemented externally. One method, illustrated below, clamps the voltage on COMP. COMP Q1 GND C1 ISL7884xASRH R1 Slope Compensation For applications where the maximum duty cycle is less than 50%, slope compensation may be used to improve noise immunity, particularly at lighter loads. The amount of slope compensation required for noise immunity is determined empirically, but is generally about 10% of the full scale current feedback signal. For applications where the duty cycle is greater than 50%, slope compensation is required to prevent instability. Slope compensation may be accomplished by summing an external ramp with the current feedback signal or by subtracting the external ramp from the voltage feedback error signal. Adding the external ramp to the current feedback signal is the more popular method. From the small signal current-mode model [1] it can be shown that the naturally-sampled modulator gain, Fm, without slope compensation is calculated in Equation 6: 1 Fm = -----------------Sntsw (EQ. 6) where Sn is the slope of the sawtooth signal and tsw is the duration of the half-cycle. When an external ramp is added, the modulator gain becomes Equation 7: 1 1 Fm = ------------------------------------- = -------------------------( Sn + Se )tsw m c Sntsw VREF D1 resistor also damps any oscillations caused by the resonant tank of the parasitic inductances in the traces of the board and the FET's input capacitance. TID environment of >50krads requires the use of a bleeder resistor of 10k from the OUT pin to GND. FIGURE 5. SOFT-START (EQ. 7) where Se is slope of the external ramp and becomes Equation 8: Se m c = 1 + ------Sn (EQ. 8) The criteria for determining the correct amount of external ramp can be determined by appropriately setting the damping factor of the double-pole located at the switching frequency. The double-pole will be critically damped if the Q-factor is set to 1, over-damped for Q < 1, and under-damped for Q > 1. An under-damped condition may result in current loop instability. 1 Q = ------------------------------------------------ ( m c ( 1 - D ) - 0.5 ) (EQ. 9) The COMP pin is clamped to the voltage on capacitor C1 plus a base-emitter junction by transistor Q1. C1 is charged from VREF through resistor R1 and the base current of Q1. At power-up C1 is fully discharged, COMP is at ~0.7V, and the duty cycle is zero. As C1 charges, the voltage on COMP increases, and the duty cycle increases in proportion to the voltage on C1. When COMP reaches the steady state operating point, the control loop takes over and soft-start is complete. C1 continues to charge up to VREF and no longer affects COMP. During power-down, diode D1 quickly discharges C1 so that the soft-start circuit is properly initialized prior to the next power-on sequence. ------------ -- e = S n + 0.5 1 - D - 1 Gate Drive 1 1 V e = V n --- + 0.5 ------------- - 1 1 -D The ISL7884xASRH is capable of sourcing and sinking 1A peak current. To limit the peak current through the IC, an optional external resistor may be placed between the totem-pole output of the IC (OUT pin) and the gate of the MOSFET. This small series where Vn is the change in the current feedback signal (I) during the on-time and Ve is the voltage that must be added by the external ramp. 9 where D is the percent of on-time during a switching cycle. Setting Q = 1 and solving for Se yields Equation 10: 1 1 (EQ. 10) Since Sn and Se are the on-time slopes of the current ramp and the external ramp, respectively, they can be multiplied by tON to obtain the voltage change that occurs during tON. (EQ. 11) FN6991.2 April 5, 2012 ISL78840ASRH, ISL78841ASRH, ISL78843ASRH, ISL78845ASRH For a flyback converter, Vn can be solved in terms of input voltage, current transducer components, and primary inductance, yielding Equation 12: Assuming the designer has selected values for the RC filter (R6 and C4) placed on the CS pin, the value of R9 required to add the appropriate external ramp can be found by superposition. D T SW V IN R CS 1 1 V e = ---------------------------------------------------- --- + 0.5 ------------- - 1 1 -D Lp 2.05D R 6 V e = ---------------------------R6 + R9 V (EQ. 12) where RCS is the current sense resistor, Tsw is the switching period, Lp is the primary inductance, VIN is the minimum input voltage, and D is the maximum duty cycle. The current sense signal at the end of the ON time for CCM operation is Equation 13: ( 1 - D ) VO T N S R CS sw V CS = ------------------------ I O + ---------------------------------------------- NP 2L s (EQ. 13) V where VCS is the voltage across the current sense resistor, Ls is the secondary winding inductance, and IO is the output current at current limit. Equation 13 assumes the voltage drop across the output rectifier is negligible. Since the peak current limit threshold is 1.00V, the total current feedback signal plus the external ramp voltage must sum to this value when the output load is at the current limit threshold as: (EQ. 14) V e + V CS = 1V The factor of 2.05 in Equation 16 arises from the peak amplitude of the sawtooth waveform on RTCT minus a base-emitter junction drop. That voltage multiplied by the maximum duty cycle is the voltage source for the slope compensation. Rearranging to solve for R9 yields Equation 17: ( 2.05D - V e ) R 6 R 9 = ---------------------------------------------Ve R6 + R9 R CS = --------------------- R CS R9 (EQ. 18) VIN = 12V VO = 48V Ls = 800H Substituting Equations 12 and 13 into Equation 14 and solving for RCS yields Equation 15: Lp = 8.0H Adding slope compensation is accomplished in the ISL7884xASRH using an external buffer transistor and the RTCT signal. A typical application sums the buffered RTCT signal with the current sense feedback and applies the result to the CS pin as shown in Figure 6. (EQ. 17) Example: Ns/Np = 10 (EQ. 15) The value of RCS determined in Equation 15 must be rescaled so that the current sense signal presented at the CS pin is that predicted by Equation 13. The divider created by R6 and R9 makes this necessary. shown in Equation 14. 1 R CS = --------------------------------------------------------------------------------------------------------------------------------------------------------1 - + 0.5 N ( 1 - D ) V O T sw D T sw V IN - --------------------------------- ------------------ - 1 + ------s- I O + --------------------------------------------- 1-D N Lp 2L s p (EQ. 16) V IO = 200mA Switching Frequency, fsw = 200kHz Duty Cycle, D = 28.6% R6 = 499 Solve for the current sense resistor, RCS, using Equation 15. RCS = 295m Determine the amount of voltage, Ve, that must be added to the current feedback signal using Equation 12. Ve = 92.4mV Using Equation 17, solve for the summing resistor, R9, from CT to CS. VREF CS R6 ISL78843ASRH R9 RTCT C4 FIGURE 6. SLOPE COMPENSATION 10 R9 = 2.67k Determine the new value of RCS (R'CS) using Equation 18. R'CS = 350m Additional slope compensation may be considered for design margin. The above discussion determines the minimum external ramp that is required. The buffer transistor used to create the external ramp from RTCT should have a sufficiently high gain (>200) so as to minimize the required base current. Whatever base current is required reduces the charging current into RTCT and will reduce the oscillator frequency. FN6991.2 April 5, 2012 ISL78840ASRH, ISL78841ASRH, ISL78843ASRH, ISL78845ASRH References Fault Conditions A Fault condition occurs if VREF falls below 4.65V. When a Fault is detected, OUT is disabled. When VREF exceeds 4.80V, the Fault condition clears, and OUT is enabled. [1] Ridley, R., "A New Continuous-Time Model for Current Mode Control", IEEE Transactions on Power Electronics, Vol. 6, No. 2, April 1991. Ground Plane Requirements Careful layout is essential for satisfactory operation of the device. A good ground plane must be employed. A unique section of the ground plane must be designated for high di/dt currents associated with the output stage. VDD should be bypassed directly to GND with good high frequency capacitors. Die Map 11 FN6991.2 April 5, 2012 ISL78840ASRH, ISL78841ASRH, ISL78843ASRH, ISL78845ASRH Revision History The revision history provided is for informational purposes only and is believed to be accurate, but not warranted. Please go to web to make sure you have the latest Rev. DATE February 28, 2012 November 9, 2011 April 22, 2010 April 8, 2010 REVISION CHANGE FN6991.2 Pg 10 - Updated Equations 13 and 15 - Changed fSW to TSW. Changed Equation 14 - added"V" to 1 making it 1V. Paragraph under Equation 12, changed fSW is the switching frequency to TSW is the switching period. Converted to new datasheet template. Added Abs Max, Thermal Information, and MIN/MAX data for Electrical Spec table. Added boldface over-temp limit notes. Pg 14: Replaced POD K8.A rev 1 with rev 2. Changes as follows: : In Side View, added 0.045 (1.14) dimension and removed "MIN" label from 0.026(0.66) dimension FN6991.1 Added Electrical Spec Table showing only the typical values. Removed boldface over-temp limit notes. Added SBDIP parts, pinout and Flatpack & SBDIP PODs. December 21, 2009 FN6991.0 Initial pre-release Products Intersil Corporation is a leader in the design and manufacture of high-performance analog semiconductors. The Company's products address some of the industry's fastest growing markets, such as, flat panel displays, cell phones, handheld products, and notebooks. Intersil's product families address power management and analog signal processing functions. Go to www.intersil.com/products for a complete list of Intersil product families. *For a complete listing of Applications, Related Documentation and Related Parts, please see the respective device information page on intersil.com: ISL78840ASRH, ISL78841ASRH, ISL78843ASRH, ISL78845ASRH To report errors or suggestions for this datasheet, please go to www.intersil.com/askourstaff FITs are available from our website at http://rel.intersil.com/reports/search.php 12 FN6991.2 April 5, 2012 ISL78840ASRH, ISL78841ASRH, ISL78843ASRH, ISL78845ASRH Package Outline Drawing K8.A 8 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE Rev 2, 12/10 0.015 (0.38) 0.008 (0.20) PIN NO. 1 ID OPTIONAL 1 2 0.050 (1.27 BSC) 0.005 (0.13) MIN 4 PIN NO. 1 ID AREA 0.022 (0.56) 0.015 (0.38) 0.115 (2.92) 0.070 (1.18) 0.265 (6.73) 0.245 (6.22) TOP VIEW 0.045 (1.14) 0.026 (0.66) 0.09 (0.23) 0.04 (0.10) 6 0.265 (6.75) 0.245 (6.22) -D- -H- -C0.180 (4.57) 0.170 (4.32) SEATING AND BASE PLANE 0.370 (9.40) 0.250 (6.35) 0.03 (0.76) MIN SIDE VIEW 0.007 (0.18) 0.004 (0.10) NOTES: LEAD FINISH BASE METAL 0.009 (0.23) 1. Index area: A notch or a pin one identification mark shall be located adjacent to pin one and shall be located within the shaded area shown. The manufacturer's identification shall not be used as a pin one identification mark. Alternately, a tab may be used to identify pin one. 0.004 (0.10) 2. If a pin one identification mark is used in addition to a tab, the limits of the tab dimension do not apply. 0.019 (0.48) 0.015 (0.38) 0.0015 (0.04) MAX 0.022 (0.56) 0.015 (0.38) 4. Measure dimension at all four corners. 3 SECTION A-A 3. The maximum limits of lead dimensions (section A-A) shall be measured at the centroid of the finished lead surfaces, when solder dip or tin plate lead finish is applied. 5. For bottom-brazed lead packages, no organic or polymeric materials shall be molded to the bottom of the package to cover the leads. 6. Dimension shall be measured at the point of exit (beyond the meniscus) of the lead from the body. Dimension minimum shall be reduced by 0.0015 inch (0.038mm) maximum when solder dip lead finish is applied. 7. Dimensioning and tolerancing per ANSI Y14.5M - 1982. 8. Controlling dimension: INCH. 13 FN6991.2 April 5, 2012 ISL78840ASRH, ISL78841ASRH, ISL78843ASRH, ISL78845ASRH Ceramic Dual-In-Line Metal Seal Packages (SBDIP) c1 -A- D8.3 MIL-STD-1835 CDIP2-T8 (D-4, CONFIGURATION C) LEAD FINISH 8 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE -DBASE METAL E b1 M (b) M -Bbbb S C A - B S (c) SECTION A-A D S D BASE PLANE Q S2 -C- SEATING PLANE A L S1 eA A A b2 b e eA/2 c aaa M C A - B S D S ccc M C A - B S D S NOTES: INCHES SYMBOL MIN MILLIMETERS MAX MIN MAX NOTES A - 0.200 - 5.08 - b 0.014 0.026 0.36 0.66 2 b1 0.014 0.023 0.36 0.58 3 b2 0.045 0.065 1.14 1.65 - b3 0.023 0.045 0.58 1.14 4 c 0.008 0.018 0.20 0.46 2 c1 0.008 0.015 0.20 0.38 3 D - 0.405 - 10.29 - E 0.220 0.310 5.59 7.87 - e 0.100 BSC 2.54 BSC - eA 0.300 BSC 7.62 BSC - eA/2 0.150 BSC 3.81 BSC - L 0.125 0.200 3.18 5.08 - Q 0.015 0.060 0.38 1.52 5 S1 0.005 - 0.13 - 6 S2 0.005 - 0.13 - 7 90o 105o 90o 105o - aaa - 0.015 - 0.38 - 3. Dimensions b1 and c1 apply to lead base metal only. Dimension M applies to lead plating and finish thickness. bbb - 0.030 - 0.76 - 4. Corner leads (1, N, N/2, and N/2+1) may be configured with a partial lead paddle. For this configuration dimension b3 replaces dimension b2. ccc - 0.010 - 0.25 - M - 0.0015 - 0.038 2 1. Index area: A notch or a pin one identification mark shall be located adjacent to pin one and shall be located within the shaded area shown. The manufacturer's identification shall not be used as a pin one identification mark. 2. The maximum limits of lead dimensions b and c or M shall be measured at the centroid of the finished lead surfaces, when solder dip or tin plate lead finish is applied. N 8 5. Dimension Q shall be measured from the seating plane to the base plane. 8 8 Rev. 0 4/94 6. Measure dimension S1 at all four corners. 7. Measure dimension S2 from the top of the ceramic body to the nearest metallization or lead. 8. N is the maximum number of terminal positions. 9. Braze fillets shall be concave. 10. Dimensioning and tolerancing per ANSI Y14.5M - 1982. 11. Controlling dimension: INCH. For additional products, see www.intersil.com/product_tree Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems as noted in the quality certifications found at www.intersil.com/design/quality Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 14 FN6991.2 April 5, 2012