Numerical Index 2N3766-2N3855A =} > MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS si = : 55 | | REPLACE. | PAGE Po 7-E] Ty | Vee | Voce | = tre @ Ic Veeisan @ le 2] fo |e TYPE 2/5 | ment | number | USE & 5 2} hu. /B] |B =lc @25C | B] C | (volts) | (volts) |S | (min) (max) 5] (volts) 3 3 Sig 2N3766 S| N 7-142| LPA 20W | Cc | 175 80 60190 40 | 160 O.5A 2.5 1.0A 40 |E 15M | T 2N3767 S| N 7-142} LPA 20W} Cc} 175 100 80+ 0 40 | 160 O.5A 2.5 1.0A 40]/E 15M | T 2N3770 G| P RFA 50M} A | 100 10 6.0] 0 10 | 200 1.0M 10] E 100M | T 2N3771 S| N LPA 150W | Cj 200 50 40] 0 15 60 15A 2.0 15A 40 ]E 0.2M/T 2N3772 S| N] 2N3715 7-125] LPA 150W | C ; 200 100 60] 0 15 60 10A 1.4 LOA 40)E 0.2M/T 2N3773 S}N LPA 150W | C | 200 160 140; 0 15 60 8.0A 1.4 8.04 40 |E 0.2M)T 2N3774 S| P PMS 5.0W | C | 200 40 40] 0 20 60 0.24 0.2 O.2A 1.0M]T 2N3775 S| P PMS 5.0W | C } 200 60 6010 20 60 O.2A 0.2 0.24 1.0M |] T 2N3776 S$; P PMS 5.0W }] C } 200 80 80] 0 20 60 0.24 0.2 0.24 1.0M | T 2N3777 S| P PMS 5.0W | C | 200 100 100] 0 20 60 0.2A 0.2 0,2A 1.0MjT 2N3778 S}P PMS 5.0W | c | 200 40 40} 0 10 40 O.2A 0.2 0.24 1.OMiT 2N3779 S| P PMS 5.0W | | 200 60 60] 0 10 40 0.2A 0.2 0.24 1.0M}T 2N3780 s|P PMS 5.0W | Cj 200 80 80/0 10 40 0.2A 0.2 0.2A 1.0M|T 2N3781 S|] P PMS 5.0W {Cj 200 100 100 | 0 LO 40 0.24 0.2 0.24 1.0M | T 2N3782 S| P PMS 5,0W 7 C | 200 40 40]0 10 60 1.0A 0.75 1.0A 1.0m | T 2N3783 G]P 9984 RFA | 0.15W] A | 100 30 20) 0 20) 200 3.0M 0.25 5.0M 207E 0.86 )T 2N3784 Gi P 9-84 RFA | 0.15W } A | LOO 30 2030 20 | 200 3.0M 0.25 5.0M 20/E 0.7G|T 2N3785 Gy P 9~84 RFA] 0,15W} A | 100 15 12,0 15 | 200 3.0M 0.35 5.0M IS | E 0.7G|T 2N3788 S|N LPA 100W | Cc | 200 400 325 10 20 | 180} 0.504 50K | E 2N3789 S| P 7-147} LPA 150W | c | 200 60 60 | 0 25 90 L.OA 1.0 5.0A 25 ]E 30K | E 2N3790 S| P 7-147) LPA 150W | C | 200 60 80] 0 25 90 1.0A 1.0 5.0A 25 /E 30K | E 2N3791 S| P 7-147) LPA 150W | C | 200 60 60] 0 50 | 180 1.0A 1.0 5.0A 25 | E 30K | E 2N3792 Ss} P 7-147) LPA iow | c | 200 80 80,0 50 {| 180 1.04 1.0 5.0A 25 (EB 30K LE 2N3793 S| N | MPS6530 5-118] AFA | 0.25wW] A | 125 40 20] 0 20 {[ 120 10M 0.4 LOM 160M | T 2N3794 S] N.| MPS6531 5-118) AFA | 0.25W} A ] 125 40 20 | O | 100 | 600 1oM 0.4 LOM 100M {| T 2N3795 S| P PMS 5.0W | C | 200 120 120 | 0 12 36 1oM 0.2 10M O.5M|T aN Field Effect Transistors, see Table on Page 1-166 2N3798 S| P 8-278[ AFA | 0.36W | A | 200 60 60 | 0 4150 | 450 0.5M 0.2 0.1M 150 | E 30M } T 2N3799 s|P 8-278} AFA | 0.36W | A | 200 60 60 | 0 | 300 | 900 Q.5M Q.2 300 [ E 30M | T 2N3800 S| P 11-41] AFA | 0.25W] A | 200 60 60 | 0 | 150 | 450 O.1M 0.2 O.1M 150 | E 100M | T 2N3801 S| P 11-41] AFA | 0.25W | A | 200 60 60 | O | 300 | 900 O.1M 0.2 O.im 300 J E 100M | T 2N3802 S| P 11-41] DFA; 0.25W {A | 200 60 60 | 0 | 150 | 450 O.1M 0.2 O.1M i50 | E 100M | T 2N3803 S}|P LL-41] DFA | 0,25W } A j 200 60 60 | 0 | 300 | 900 0.1M 0.2 0.1M 300 | E LOOM | T 2N3804 S| P 11-41} DFA | 0.25W] A | 200 60 60 | 0 | 150 7 450 0.1M 0.2 O.1M 150 | E Loom | T 2N3805 S| P 11-41] DFA | 0.25W | A | 200 60 60 | O | 300 | 900 0.1M 0.2 0.1M 300 { E 100M | T 2N3806 S|, P 11-41) AFA Q.5W | A | 200 60 60 | a | 150 | 450 Q.1M G.2 O.1M IO) E LOOM | T 2N3807 Ss! P 11-41] AFA 0.5W | A | 200 60 60 | O | 300 | 900 O.1M 0.2 0.1M 300 JE 100M | T 2N3808 S|] P 11-41] DFA 0.5W | A | 200 60 60 | 0 | 150 |} 450 O.1M 0.2 O.1M 150 7E 100M | T 2N3809 S|] P 11-41] DFA O.5W 1A | 200 60 60 | oO | 300 | 900 0.1M 0.2 O.1M 300 | E 100M | T 2N3810 S| P li+41} DFA O.5W | A | 200 60 60 | 0 | 150 | 450 0.1M 0.2 0.1M 150, E 100M | T 2N3811 S| P 11-41] DFA 0.5W {| A j 200 60 60 | O | 300 j 900 O.1M 0.2 O.1M 300 | E 100M j T 2N3812 S| P 11-41] DFA 350M | A | 200 60 60 | 0 | 150 | 450 0.1M 0.2 0.1M 150 | E 100M | T 2N3813 S| P 11-41] DFA 350M | A | 200 60 60 | O | 300 | 900 0.1M 0.2 Q.1M 300 | E 100M | T 2N3814 S| P 11-41] DFA 350M | A | 200 60 60 |] 0 | 150 } 450 0.1M 0.2 0.1M 150] E LOOM } T 2N3815 S|] P 11-41] DFA 350M | A | 200 60 60 | O | 300 | 900 0.1M 0.2 O.1M 300 | E 100M | T 2N3816 $i P 11-41] DFA 350M | A | 200 60 60 | 0 | 150 | 450 0.1M 0.2 Q.1M 150 | E 100M | T 2N3817 Ss] P 1i+41| DFA 350M) A | 200 60 60 | O | 300 | 900 0.1M 0.2 0.1M 300 [E LOOM | T 2N3818 S|N 9-89 HPA 25W | C |] 175 60 60] S |5.0 50 400M 0.5 1.0A 3.0 ]E 2N3819 chew Field Effect Transistors, see Table on Page 1-166 2N382 2N3825 S| N | MPS3398 5-86 RFC | 0,25W | A | 150 30 i510 20 2.0M 0.25 2.0M 200M | T 2N3826 S| N | MPS3826 5-102] RFC O.2W | A} 150 60 4510 40 | 160 LOM 200M | T 2N3827 S| N | MPS3827 5-102 | RFC 0.2W ; A | 150 60 45 | 0 | 100 | 400 10M 200M | T 2N3828 S} N | MPS6565 5-148 | RFC 0.3W | A 4150 40 40]0 30 | 200 12M 360M | T 2N3829 S| P HSS | 0.36W | A | 200 35 20/0 30 | 120 30M 0.18 10M 350M | T 2N3830 S| N HSS 1.0W | A | 200 80 50 | 0 30 Q.15A 0.37] 0.154 200M | T 2N3831 S|N HSS L.0w | A | 200 70 40] 0 35 O.15A 0.3] 0.15A 200M | T 2N3832 S|[N HSS 0.2W | A | 200 15 6.010 25 | 125 2.0M 0.4 10M 800M | T 2n3833 | s|N HPA 25 | 1s|o]| 20 30M 2.5 2N3834 S|N HPA 25 15 }0 20 30M 2.5 ,E 2N3835 S|N HPA 25 15 | 0 20 30M 2.5 2N3836 S|N PHS L.OW | A | 200 80 60/0 2K ] 20K 2.04 1.8 5.0A 40M | T 2N3837 S| N PHS 1.,0W | A | 200 100 80] 0 2K | 20K 2.0A 1.8 5.0A 40M | T 2N3838 5 NP 11-45) HSA |] 0.25wW ] A | 200 60 40 {6 | 100 } 300 ] O.15A 0.4] 0.154 60) E 200M) T 2N33839 S| N RFA 200M | A | 200 30 15 | 0 30 3.0M 2.0G,T 2N3840 S| P CHP 0.4W | A | 200 50 50] 0 30 0.2M o.l1 5.0M 6.0M/T 2N3841 S| P CHP 0.3W {A | 200 100 100 | 0 15 0.2M 0.12 5.0M 1.5M | T 2N3842 S|] P CHP 0.3W | A | 200 120 120 | 0 10 1.0M 5.0M 1,.0M | T 2N3843 S| N | MPS6512 5-109] RFC 0.2W |] A {125 30 30/0 20 40 2.0M 60M | T 2N3843A | S|} N | MPS6512 5-109] RFC 0.2W {A | 125 30 30])0 20 40 2.0M 60M | T 2N3844 Sj] N | Mps6512 5-109} RFC 0.2W } A | 125 30 30 70 35 70 2.0M som | T 2N3844A |S | N | MPS6512 5-109] RFC 0.2W ]A | 125 30 30] 0 35 70 2.0M 90M | T 2N3845 S| N | MPS6512 5109] RFC O.2W }A 7 125 30 40] 0 60 | 120 2.0M 126M | T 2N3845A | S| N | MPS6513 5-109] RFC 0O.2W ]} A {125 30 30] 0 60 | 120 2.0M 126M ] T 2N3846 S|N LPA 4.0W | A } 175 300 200 | 0 10 60 LOA 0.75 10A 50]|)E LOM | T 2N3847 S|N LPA 4.0W | A] 175 400 300 | 0 10 60 10A 0.75 LOA 50 ]/E LOM j T 2N3848 S| N LPA 4.0W | A] 175 300 300 | 0 10 60 15A 1.0 I5A S50 |E LOM | T 2N3849 S|N LPA 4.0W FA 1175 400 300 |0 10 60 15A 1.0 15A SQ [E Lom | T 2N3850 S]N PHS 30W | C | 200 100 80/0 50 |] 150 1.04 0.25 1.0A 20M} T 2N3851L SIN PHS 30W | | 200 L100 80] 0 30 90 1.0A 0.25 1.0A 20M|T 2N3852 S| N PHS 30W | C f 200 60 4010 50 | 150 1.04 0.25 1.0A 20M/T 2N3853 S|] N PHS 30W | C | 200 60 40] 0 30 90 1.0A 0.25 1.0A 20M | T 2N3854 S| N | MPS6512 5-109] RFC O.2W | A | 150 18 18/0 35 70 2.0M 100M | T 2N3854A |S | N | MPS6512 5-109] RFC O.2W | A 4,150 30 30/0 35 70 2.0M 100M | T 2N3855 S| N | MPS6512 5-109] RFC O.2W | A | 150 18 18 | 0 60 | 120 2.0M 130M | T 2N3855A | S | N | MPS6512 5-109} RFC O,2W 4] A | 150 30 3010 60 | 120 2.0M 130M | T 1-143GENERAL PURPOSE SWITCHING AND AMPLIFIER TRANSISTORS (SILICON) Switching and General Purpose Transistors Current versus Voltage OPTIMUM COLLECTOR CURRENT BVcto Oto 10 mA 10 mA to 100 mA 100 mA to 500 mA 500 mA to 1.04 AOAC 3OA Min Volts NPN PNP NPN PNP NPN PNP NPN PNP NPN PNP 15 2N916 2N916 2N696 2N1991 2N2330 2N1983 2N697 | 2N2331 2N1984 2N718 2N1420 29 2N2195 30 2N2218 | 2N3133 2N2218 | 2N2800 2N2219 | 2N3134 2N2219 | 2N2801 2N2221 | 2N3135 2N2221 | 2N2837 2N2222 | 2N3136 2N2222 | 2N2838 2N3299 | 2N3133 2N3300 | 2N3134 2N3301 | 2N3135 39 2N3302 | 2N3136 49 2N758 2N3250 2N2218A| 2N3250 2N2194 | 2N2904 2N2192 | 2N3244 2N3506 2N795 2N3251 2N2219A! 2N3251 2N2218A} 2N2905 2N2193 | 2N3245 2N3507 2N760 MM4048 2N22214! 2N2219A) 2N2906 2N915 2N2222A 2N2221A] 2N2907 2N929 2N2224 2N2222A!| 2N3485 2N930 2N3946 2N3486 2N3946 2N3947 2N4890 59 2N3947 60 2N758A | 2N3798 2N910 2N3250A 2N656 2N2904A 2ZN759A | 2N3799 2N911 2N3251A 2N699 2N2905A 2N760A | 2N3250A 2N1990 2N2906A 2N929A | 2N3251A 2N2907A 2N9304 2N3485A MM2483 2N3486A 79 MM2484 80 2N739 2N3494 2N720A | 2N3494 2N720A 2N3019 Y 2N740 2N3496 2N1893 | 2N3496 2N3019 2N3020 99 2N2405 2N3020 100 2N4924 | 2N3495 2N3498 | 2N3495 2N3498 | 2N3634 \ 2N3497 2N3499 | 2N3497 2N3499 | 2N3635 2N4928 2N4924 | 2N9634 2N4924 2N3635 149 2N4928 150 2N3114 | 2N4929 2N3500 | 2N3635 2N3500 | 2N3636 2N4925 | 2N4930 2N3501 | 2N3637 2N3501 | 2N3637 2N4926 2N4925 | 2N4929 2N4925 249 2N4926 | 2N4930 250 2N3742 | 2N3743 2N3742 | 2N3743 uP 2N4927 | 2N4931 2N4927 | 2N4931 D?'NWi(*=ww~rirosdc &{ WiehwWWMWWwwYo qh~w~wy* ~7* We > >, ,wWW, BCE)?0DiWwCOCC WN NWSwitching and General Purpose Transistors 2N3724, 2N3725 2N4013, 2N4014 (continued) ELECTRICAL CHARACTERISTICS (1, = 25C unless otherwise noted) Characteristic Symbol | Min | Max | Unit ON CHARACTERISTICS (continued) Collector-Emitter Saturation Voltage* Vor(sat)* Vdc a, = 10 mAdc, Ig = 1.0 mAdc) - 0, 25 I. = mAdc, I, = mAdc N 2N - . Cc 100 B 10 mA 2N3724, 2N4013 0.20 2N3725, 2N4014 - 0.26 Mp = 300 mAdc, I3e 30 mAdc) 2N3724, 2N4013 - 0.32 2N3725, 2N4014 - 0.40 (lg = 500 mAdc, I, = 50 mAdc) 2N3724, 2N4013 - 0. 42 2N3725, 2N4014 - 0. 52 de = 800 mAdc, I, = 80 mAdc) 2N3724, 2N4013 - 0. 65 2N3725, 2N4014 - 0. 80 (I, = 1.0 Ade, I,, = 100 mAde) 2N3724, 2N4013 - 0.75 2N3725, 2N4014 - 0.95 Base-Emitter Saturation Voltage* Vv * Vdc (I, = 10 mAde, Tg = 1.0 mAde) BE(sat) - 0.76 (a mAdc, I, = mAdc - . c 100 B 10 mA 0. 86 Co = 300 mAdc, I, = 30 mAdc) - 11 Gy = 500 mAdc, Ip 50 mAdc) 0.9 1.2 dg = 800 mAdc, Int 80 mAdc) - 1.5 My = 1,0 Ade, 1, = 100 mAdc) - 1.7 SMALL-SIGNAL CHARACTERISTICS Current-GainBandwidth Product fp MHz a, = 50 mAdc, Vor = 10 Vdc, f = 100 MHz) 300 - Output Capacitance Cob pF (Vop = 10 Vdc, Ip = 0, f = 140 kHz) 2N3724, 2N4013 - 12 2N3725, 2N4014 - 10 Input Capacitance Ciy pF (Var = 0.5 Vdc, Ine 0, f = 140 kHz) - 55 SWITCHING CHARACTERISTICS Turn-On Time ton - 35 ns (Vaan = 30 Vde, Vip = 3,8 Vdc 5 cc > "BE (aff) ; _ Delay Time Ig = 500 mAde, I; = 50 mAdc) a *0 ns Rise Time (See Figure 1) t. - 30 ns Turn-Off Time tote - 60 ns (Vog = 30 Vde, I, = 500 mAdc, Storage Time ~ . t - 50 ns 31 =lp2 = 50 mAdc) s Fall Time (See Figure 1) 2N3724, 2N4013 te - 25 ns 2N3725, 2N4014 - 30 * Pulse Test: Pulse Width = 300 us, Duty Cycle = 1.0%. FIGURE 1 SWITCHING TIMES TEST CIRCUIT +30Vv < > 15 -3.8V > 1.0 PF ( (o TO SAMPLING OSCILLOSCOPE 1.0k e 4 7 | Zin & 100 k22 TL t< 1.0 ns Vin = 19-7 1.0 BF 100 PULSE GENERATOR . t,. tp < 1.0ns 62 PW. ~ 1.0 ps Zin = 80.Q + == D.C. < 2.0% - ~ 8-258 Switching and General Purpose Transistors Veto =60V 2n3/ 98 (siticon) 0 lc = 50mA hr: = 150 and 300 Min @ 100 A 2n3799 NF = 1.5-2.5dB @ 10 kHz ( PNP silicon annular transistors for low-level, low- noise amplifier applications. Collector connected to case CASE 22 (TO-18) MAXIMUM RATINGS Rating Symbol Value Unit Collector-Base Voltage Vos 60 Vde Collector-Emitter Voltage VcEo 60 Vde Emitter-Base Voltage VEB 5 Vde Collector Current Io 50 mAdc Total Device Dissipation @ T,. = 25C Pp 1.2 Watts Derating Factor Above 25 6.9 mw/C Total Device Dissipation @ T, = 25C Pp 0.36 Watt, Derating Factor Above 25C 2.06 mw/-C Junction Operating Temperature Ty 200 % Storage Temperature Range T stg -65 to +200 % 8-278 Switching and General Purpose Transistors 2N3798, 2N3799 (continued) ELECTRICAL CHARACTERISTICS (At 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Coliector-Base Breakdown Voltage BVopo Vde (Ig = 10 Ade, Ip = 0) 60 _ _ Collector-Emitter Breakdown Voltage BVcro Vde (ig = 10 mAdc, Ip = 0) 60 90 - Emitter-Base Breakdown Voltage BVEBO Vde (Ig = 10 wAde, Iq = 0) 5 _ _ Collector Cutoff Current IcBo uAde (Vop = 50 Vde, Tp = 0) .010 = = = fe) Voz = 50 Vde, Ip = 0, Ty = 150 Cc) 10 Emitter Cutoff Current IEBO nAdc (Von = 4 Vde, Ig = 0) - ~ 20 Collector-Emitter Saturation Voltage* Vox(sat)* Vde (Ig = 100 pAdc, Ip = 10 4 Adc) - 0.2 (ig = 1 mAdc, Ip = 100 # Adc) _ - 0.25 Base-Emitter Saturation Voltage* VBE(sat)* Vde (Ig = 100 wAde, Ig = 10 # Adc) _ _ 0.7 (i = 1 mAde, Ip = 100 pAdc} _ _ 0.8 DC Forward Current Transfer Ratio* hpp* _ (Ig = 1 wAdc, Veg = 5 Vdc) 2N3799 15 _ _ (Ig = 10 uAde, Vog = 5 Vde) 2N3798 100 _ - 2N3799 225 _ - (Ig = 100 p Adc, Veg = 5 Vdc) 2N3798 150 _ 450 2N3799 300 900 (Ig = 100 pAdce, Vog = 5 Vde, Ta = -55C) .2N3798 15 _ - 2N3799 150 _ _ (Ig = 500 wAdc, Vog = 5 Vde) 2N3798 150 _ 450 2N3799 300 _ 900 (ig = 1 mAdc, Vog = 5 Vade) 2N3798 150 _ 450 2N3799 300 _ 900 (Ig = 10 mAdc, Vog = 5 Vdc) 2N3798 125 _ - 2N3799 250 _ _ Base Emitter ON Voltage VBE(ON) Vde (Ig = 100 wAde, Vo = 5 Vv) _ - 0.7 Output Capacitance c ob pF (Vop = 5 Vde, Ip = 0, f = 100 kHz) _ _ 4 Input Capacitance Cib \pF (Vpe = 0.5 Vde, Io = 0, f = 100 kHz) _ _ 8 Small Signal Current Gain hee _ (ig = 5002A, Vog = 5 V,= 30 MHz) 1.0 - _ (Ig = 1 mA, Vog = 5 V,f = 100 MHz) 1.0 - 5.0 (lg = 1mA, Veg = 10 V,f= 1 kHz) 2N3798 150 _ 600 2N3799 300 _ 900 Voltage Feedback Ratio bre x10"4 (le = 1.0 mA, Vog = 10V,f= 1 kHz) _ 25 Input Impedance hie k ohms (ig = 1.0 mA, Vog = 10V,f= 1 kHz) 2N3798 3 _ 15 2N3799 10 - 40 Output Admittance Hoe famhos (ig = 1.0 mA,Vog = 10 V,f = 1 kHz) 5 a 60 Noise Figure NF dB (Ig = 100 uA, Vog = 10 V, Rg = 3 kQ) f = 100 Hz 2N3798 _ 4 7 2N3799 _ 2.5 4 f =1 kHz 2N3798 _ 1.5 3 2N3799 _~ 0.8 1.5 f =10 kHz 2N3798 _ 1.0 2.5 2N3799 _ 0.8 1.5 Noise Bandwidth 10Hz to 15.7 kHz 2N3798 _ 2.5 3.5 2N3799 _ 1.5 2.5 * Pulse Test < 300 ys, duty cycle = 2% Vop - Base-Emitter Reverse Bias 8-279hie (ohins} Switching and General Purpose Transistors 2N3798, 2N3799 (continued) NF, Noise Figure (db) 100K 10K 500 400 300 200 100 1K NOISE FIGURE versus FREQUENCY AND SOURCE RESISTANCE 2N3798 14 versus Rg f V2 0 0.1 0203 0507 10 2 3 #5 710 2 30 f, FREQUENCY {kHz} and Rg, SOURCE RESISTANCE (kohms) CURRENT GAIN 1000 700 O01 02 04.06 O1 02 0406 10 20 40 60 ic, COLLECTOR CURRENT (mAdc) INPUT IMPEDANCE 01 02 04 06 0.1 02 0406 10 20 4060 tc, COLLECTOR CURRENT (mAdc) 50 70 100 Noe (y2 mhos) ee, (X10 74} 8-280 NF, Noise Figure (db) 1000 500 200 100 50 20 0.5 01 0 0.4 02 04 06 01 2N3799 versus Rg f 0.2 03 0.5 0.71.0 23 5 7 10 20 30 5070 100 f, FREQUENCY {kHz) and Rj, SOURCE RESISTANCE (kohms) OUTPUT ADMITTANCE Z 2N3798 02 0406 10 20 4060 10 Ie, COLLECTOR CURRENT (mAdc) VOLTAGE FEEDBACK RATIO 01 02 04 06 01 02 #0406 10 20 4060 10 Ic, COLLECTOR CURRENT (mAdc) Switching and General Purpose Transistors 2N3798, 2N3799 (continued) Nee, OC CURRENT GAIN hee, DC CURRENT GAIN Vpe(on), BASE-EMITTER VOLTAGE (VOLTS) CURRENT GAIN CHARACTERISTICS 2N3798 001 002 005 0.01 0.02 0.05 0.1 0.2 05 10 2.0 5.0 10 Ic, COLLECTOR CURRENT (mAdc) 1000 2N3799 Ta = 125C 700 500 300 200 001 002 .005 0.01 0.02 0.05 0.1 0.2 05 10 2.0 5.0 10 Ic, COLLECTOR CURRENT (mAdc) BASE-EMITTER ON VOLTAGE versus TEMPERATURE 10 on 08 Ta = 55C Ta = 25C Ta = 25C 06 Ta = 125C Ty = 125C 04 0.2 Vee (ON), BASE-EMITTER VOLTAGE (VOLTS) 01.02 O5 O1 02 0.5 10 2 5 10 01 62 05 O01 02 05 1.0 2 5 10 Ic, COLLECTOR CURRENT (mAdc) ic, COLLECTOR CURRENT (mAdc) 8-281