DG4052EEN-T1-GE4 - VISHAY - Datasheet.Live

DG4051E, DG4052E, DG4053E

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Low Capacitance, Low Charge Injection, 4- / 8-Channel,

Triple SPDT, ± 5 V / 12 V / 5 V / 3 V Analog Multiplexers

DESCRIPTION

The DG4051E, DG4052E, and DG4053E are high precision

CMOS analog multiplexers. The DG4051E is an 8-channel

multiplexer, the DG4052E is a dual 4-channel multiplexer,

and the DG4053E is a triple 2-channel multiplexer or triple

SPDT.

The DG4051E, DG4052E, and DG4053E feature low

leakage, parasitic capacitance, and low charge injection

of 0.3 pC over the full voltage range. These devices are ideal

for high precision signal switching and multiplexing.

Designed to operate from a 3 V to 16 V single supply or from

a ± 3 V to ± 8 V dual supplies, the DG4051E, DG4052E, and

DG4053E are fully specified at 3 V, 5 V, 12 V and ± 5 V. All

control logic inputs have guaranteed 2 V logic high limit

when operating from 5 V or ± 5 V supplies and 1.4 V when

operating from a 3 V supply.

All switches conduct equally well in both directions, offering

rail to rail analog signal switching and can be used both as

multiplexers as well as de-multiplexers.

The DG4051E, DG4052E, and DG4053E operating

temperature is specified from -40 °C to +125 °C and

are available in 16 pin TSSOP and the ultra compact

1.8 mm x 2.6 mm miniQFN16 packages.

BENEFITS

• Wide operation voltage range

• Low charge injection

• Low parasitic capacitance

• Compact package option

FEATURES

• 3 V to 16 V single supply or ± 3 to ± 8 V dual

supply operation

• Low parasitic capacitance:

CD(ON): 8.5 pF / typ. (DG4053E)

CS(OFF): 2.0 pF / typ. (DG4053E)

• Less than 0.3 pC charge injection over the full signal swing

range

• Low leakage: < 50 pA, typ.

• Fast switching tON: 35 ns, typ.

• 3 V logic compatible for control

• Bi-directional rail to rail signal switching

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Automatic test equipment

• Process control and automation

• Data acquisition systems

• Meters and instruments

• Medical and healthcare systems

• Communication systems

• Audio and video signal routing

• Relay replacement

• Battery powered systems

FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION

ENABLE = LO, all switches are controlled by addr pins.

ENABLE = HI, all switches are off.

V+

V-

ENABLE

GND

Top View

DG4051E

TSSOP16

Top View

DG4052E

TSSOP16

V+

V-

ENABLE

GND

Logic

ENABLE

DG4053E

TSSOP16

Top View

V+

V-

ENABLE

GND

DG4051E, DG4052E, DG4053E

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FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION

Note

a. -40 °C to +85 °C datasheet limits apply.

TRUTH TABLE

ENABLE

INPUT

SELECT INPUTS ON SWITCHES

C B A DG4051E DG4052E DG4053E

H X X X All switches open All switches open All switches open

L L L L X to X0 X to X0, Y to Y0 X to X0, Y to Y0, Z to Z0

L L L H X to X1 X to X1, Y to Y1 X to X1, Y to Y0, Z to Z0

L L H L X to X2 X to X2, Y to Y2 X to X0, Y to Y1, Z to Z0

L L H H X to X3 X to X3, Y to Y3 X to X1, Y to Y1, Z to Z0

L H L L X to X4 X to X0, Y to Y0 X to X0, Y to Y0, Z to Z1

L H L H X to X5 X to X1, Y to Y1 X to X1, Y to Y0, Z to Z1

L H H L X to X6 X to X2, Y to Y2 X to X0, Y to Y1, Z to Z1

L H H H X to X7 X to X3, Y to Y3 X to X1, Y to Y1, Z to Z1

ORDERING INFORMATION

TEMPERATURE RANGE CONFIGURATION PACKAGE PART NUMBER MIN. ORDER / PACKAGING QUANTITY

-40 °C to +125 °C a

Lead (Pb)-Free

DG4051E

16-pin TSSOP DG4051EEQ-T1-GE3 Tape and reel 3000 units

16-pin SOIC DG4051EEY-T1-GE3 Tape and reel 2500 units

16-pin miniQFN DG4051EEN-T1-GE4 Tape and reel 3000 units

DG4052E

16-pin TSSOP DG4052EEQ-T1-GE3 Tape and reel 3000 units

16-pin SOIC DG4052EEY-T1-GE3 Tape and reel 2500 units

16-pin miniQFN DG4052EEN-T1-GE4 Tape and reel 3000 units

DG4053E

16-pin TSSOP DG4053EEQ-T1-GE3 Tape and reel 3000 units

16-pin SOIC DG4053EEY-T1-GE3 Tape and reel 2500 units

16-pin miniQFN DG4053EEN-T1-GE4 Tape and reel 3000 units

Pin 1

Device Marking: Fxx for DG4051E

(miniQFN16) Gxx for DG4052E

Hxx for DG4053E

xx = Date/Lot Traceability Code

Exx

1314

V-

ENABLE

GND

V+

Top View

DG4051E

mQFN-16

Top View

DG4052E

mQFN-16

Logic

586

V-

ENABLE

GND

Logic

V+

GND

Top View

DG4053E

mQFN-16

V+

ENABLE

V-

DG4051E, DG4052E, DG4053E

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S16-0623-Rev. A, 11-Apr-16 3Document Number: 69685

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Notes

a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.

b. All leads welded or soldered to PC board.

c. Derate 5.6 mW/°C above 70 °C.

d. Derate 6.6 mW/°C above 70 °C.

e. Derate 8.0 mW/°C above 70 °C.

f. Manual soldering with iron is not recommended for leadless components. The miniQFN-16 is a leadless package. The end of the lead

terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip

cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER LIMIT UNIT

V+ to V- -0.3 to +18

GND to V- -18

Digital Inputs a, VS, VD(V-) - 0.3 to (V+) + 0.3

or 30 mA, whichever occurs first

Continuous Current (any terminal) 30 mA

Peak Current, S or D (pulsed 1 ms, 10 % duty cycle) 100

Storage Temperature -65 to +150 °C

Power Dissipation b

16-pin TSSOP c450

mW16-pin miniQFN d, f 525

16-pin narrow SOIC e640

Thermal Resistance b

16-pin TSSOP c178

°C/W16-pin miniQFN d, f 152

16-pin narrow SOIC e125

ESD Human Body Model (HBM); per ANSI / ESDA / JEDEC® JS-001 2500 V

Latch Up Current, per JESD78D 400 mA

SPECIFICATIONS FOR DUAL SUPPLIES

PARAMETER SYMBOL

TEST CONDITIONS

UNLESS OTHERWISE SPECIFIED

V+ = 5 V, V- = -5 V

VIN(A, B, C, and enable) = 2 V, 0.8 V a

TEMP. b TYP.

-40 °C to +125 °C -40 °C to +85 °C

UNIT

MIN. dMAX. dMIN. dMAX. d

Analog Switch

Analog Signal Range eVANALOG Full - -5 5 -5 5 V

On-Resistance RON IS = 1 mA, VD = -3 V, 0 V, 3 V Room 68 - 78 - 78



Full - - 106 - 97

On-Resistance Match RON IS = 1 mA, VD = ± 3 V Room 0.91 - 6 - 6

Full - - 6 - 6

On-Resistance

Flatness RFLATNESS IS = 1 mA, VD = -3 V, 0 V, 3 V Room 10 - 17 - 17

Full - - 20 - 19

Switch Off

Leakage Current

IS(off) V+ = 5.5 V, V- = -5.5 V,

VD = ± 4.5 V, VS = 4.5 V

Room ± 0.05 -1 1 -1 1

Full - -50 50 -5 5

ID(off)

Room ± 0.05 -1 1 -1 1

Full - -50 50 -5 5

Channel On

Leakage Current ID(on) V+ = 5.5 V, V- = -5.5 V,

VS = VD = ± 4.5 V

Room ± 0.05 -1 1 -1 1

Full - -50 50 -5 5

Digital Control

Input Current, VIN Low IIL VIN(A, B, C, and enable) under test = 0.6 V Full 0.02 -1 1 -1 1 μA

Input Current, VIN High IIH VIN(A, B, C, and enable) under test = 2 V Full 0.02 -1 1 -1 1

Input Capacitance eCIN f = 1 MHz Room 3.4 - - - - pF





DG4051E, DG4052E, DG4053E

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Dynamic Characteristics

Off Isolation eOIRR

RL = 50 , CL = 1 pF

f = 100 kHz Room -106 - - - -

f = 10 MHz Room -68 - - - -

f = 100 MHz Room -49 - - - -

Channel-to-Channel

Crosstalk eXTALK

f = 100 kHz Room -105 - - - -

f = 10 MHz Room -62 - - - -

f = 100 MHz Room -51 - - - -

Bandwidth, 3 dB BW RL = 50 

DG4051E Room 308 - - - -

MHzDG4052E Room 353 - - - -

DG4053E Room 930 - - - -

Transition Time tTRANS

RL = 300 , CL = 35 pF

see Fig. 1, 2, 3

Room 72 - 112 - 112

Full - - 139 - 131

Enable Turn-On Time tON

Room 35 - 75 - 75

Full - - 86 - 80

Enable Turn-Off Time tOFF

Room 48 - 88 - 88

Full - - 97 - 95

Break-Before-Make

Time Delay tD

Room - 1 - 1 -

Full - - - - -

Charge Injection eQV

g = 0 V, Rg = 0 , CL = 1 nF Room 0.38 - - - - pC

Source Off

Capacitance eCS(off) f = 1 MHz

DG4051E Room 2.2 - - - -

DG4052E Room 2.1 - - - -

DG4053E Room 2 - - - -

Drain Off

Capacitance eCD(off) f = 1 MHz

DG4051E Room 9.2 - - - -

DG4052E Room 4.8 - - - -

DG4053E Room 3.1 - - - -

Channel On

Capacitance eCD(on) f = 1 MHz

DG4051E Room 14.9 - - - -

DG4052E Room 10 - - - -

DG4053E Room 8.5 - - - -

Total Harmonic

Distortion eTHD Signal = 5 VRMS,

20 Hz to 20 kHz, RL = 600 Room 0.065 - - - - %

Power Supplies

Power Supply Current I+

V+ = 5 V, V- = -5 V

VIN(A, B, C, and enable) = 0 V or 5 V

Room 0.05 - 1 - 1

μA

Full - - 10 - 10

Negative Supply

Current I- Room -0.05 -1 - -1 -

Full - -10 - -10 -

Ground Current IGND

Room -0.05 -1 - -1 -

Full - -10 - -10 -

SPECIFICATIONS FOR DUAL SUPPLIES

PARAMETER SYMBOL

TEST CONDITIONS

UNLESS OTHERWISE SPECIFIED

V+ = 5 V, V- = -5 V

VIN(A, B, C, and enable) = 2 V, 0.8 V a

TEMP. b TYP.

-40 °C to +125 °C -40 °C to +85 °C

UNIT

MIN. dMAX. dMIN. dMAX. d

DG4051E, DG4052E, DG4053E

www.vishay.com Vishay Siliconix

S16-0623-Rev. A, 11-Apr-16 5Document Number: 69685

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SPECIFICATIONS FOR UNIPOLAR SUPPLIES

PARAMETER SYMBOL

TEST CONDITIONS

UNLESS OTHERWISE SPECIFIED

V+ = 12 V, V- = 0 V

VIN(A, B, C, and enable) = 2 V, 0.8 V a

TEMP. b TYP.

-40 °C to +125 °C -40 °C to +85 °C

UNIT

MIN. dMAX. dMIN. dMAX. d

Analog Switch

Analog Signal Range eVANALOG Full - 0 12 0 12 V

On-Resistance RON IS = 1 mA, VD = 0.7 V, 11.3 V Room 85 - 103 - 103



Full - - 133 - 125

On-Resistance Match RON IS = 1 mA, VD = 11.3 V Room 1.24 - 8 - 8

Full - - 8 - 8

On-Resistance

Flatness RFLATNESS IS = 1 mA, VD = 0.7 V, 11.3 V Room 27 - 37 - 37

Full - - 44 - 43

Switch Off

Leakage Current

IS(off) V+ = 13.2 V, V- = 0 V

VD = 1 V / 12.2 V, VS = 12.2 V / 1 V

Room ± 0.05 -1 1 -1 1

Full - -50 50 -5 5

ID(off)

Room ± 0.05 -1 1 -1 1

Full - -50 50 -5 5

Channel On

Leakage Current ID(on) V+ = 13.2 V, V- = 0 V

VD = VS = 1 V / 12.2 V

Room ± 0.05 -1 1 -1 1

Full - -50 50 -5 5

Digital Control

Input Current,

VIN Low ILVIN(A, B, C, and enable)

under test = 0.8 V Full 0.02 -1 1 -1 1

μA

Input Current,

VIN High IHVIN(A, B, C, and enable)

under test = 2 V Full 0.02 -1 1 -1 1

Dynamic Characteristics

Transition Time tTRANS

RL = 300 , CL = 35 pF

see Fig. 1, 2, 3

Room 43 - 83 - 83

Full - - 95 - 90

Enable Turn-On Time tON

Room 22 - 62 - 62

Full - - 71 - 67

Enable Turn-Off Time tOFF

Room 47 - 87 - 87

Full - - 94 - 93

Break-Before-Make

Time Delay tD

Room 25 1 - 1 -

Full - - - - -

Charge Injection eQV

g = 0 V, Rg = 0 , CL = 1 nF Full - - - - - pC

Off Isolation eOIRR RL = 50 , CL = 1 pF

f = 100 kHz

Room - - - - -

Channel-to-Channel

Crosstalk eXTALK Room - - - - -

Source Off

Capacitance eCS(off) f = 1 MHz

DG4051E Room - - - - -

DG4052E Room - - - - -

DG4053E Room - - - - -

Drain Off

Capacitance eCD(off) f = 1 MHz

DG4051E Room - - - - -

DG4052E Room - - - - -

DG4053E Room - - - - -

Channel On

Capacitance eCD(on) f = 1 MHz

DG4051E Room - - - - -

DG4052E Room - - - - -

DG4053E Room - - - - -

Power Supplies

Power Supply Current I+

VIN(A, B, C, and enable) = 0 V or 5 V

Room 0.05 - 1 - 1

μA

Full - - 10 - 10

Negative Supply

Current I- Room -0.05 -1 - -1 -

Full - -10 - -10 -

Ground Current IGND

Room -0.05 -1 - -1 -

Full - -10 - -10 -

DG4051E, DG4052E, DG4053E

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S16-0623-Rev. A, 11-Apr-16 6Document Number: 69685

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SPECIFICATIONS FOR UNIPOLAR SUPPLIES

PARAMETER SYMBOL

TEST CONDITIONS

UNLESS OTHERWISE SPECIFIED

V+ = 5 V, V- = 0 V

VIN(A, B, C, and enable) = 2 V, 0.8 V a

TEMP. b TYP.

-40 °C to +125 °C -40 °C to +85 °C

UNIT

MIN. dMAX. dMIN. dMAX. d

Analog Switch

Analog Signal Range eVANALOG Full - 0 5 0 5 V

On-Resistance RON IS = 1 mA, VD = 0 V, 3.5 V Room 125 - 147 - 147



Full - - 176 - 168

On-Resistance Match RON IS = 1 mA, VD = 3.5 V Room 1.3 - 8 - 8

Full - - 8 - 8

On-Resistance

Flatness RFLATNESS IS = 1 mA, VD = 0 V, 3 V Room 21 - 31 - 31

Full - - 25 - 29

Switch Off

Leakage Current

IS(off) V+ = 5.5 V, V- = 0 V

VD = 1 V / 4.5 V, VS = 4.5 V / 1 V

Room ± 0.03 -1 1 -1 1

Full - -50 50 -5 5

ID(off)

Room ± 0.03 -1 1 -1 1

Full - -50 50 -5 5

Channel On

Leakage Current ID(on) V+ = 5.5 V, V- = 0 V

VD = VS = 1 V / 4.5 V

Room ± 0.03 -1 1 -1 1

Full - -50 50 -5 5

Digital Control

Input Current,

VIN Low ILVIN(A, B, C, and enable)

under test = 0.6 V Full 0.02 -1 1 -1 1

μA

Input Current,

VIN High IHVIN(A, B, C, and enable)

under test = 2 V Full 0.02 -1 1 -1 1

Dynamic Characteristics

Transition Time tTRANS

RL = 300 , CL = 35 pF

see Fig. 1, 2, 3

Room 95 - 135 - 135

Full - - 169 - 148

Enable Turn-On Time tON

Room 56 - 96 - 96

Full - - 117 - 107

Enable Turn-Off Time tOFF

Room 55 - 95 - 95

Full - - 110 - 103

Break-Before-Make

Time Delay tD

Room - 12 - 12 -

Full - - - - -

Charge Injection eQV

g = 0 V, Rg = 0 , CL = 1 nF Full 0.32 - - - - pC

Off Isolation eOIRR RL = 50 , CL = 1 pF

f = 100 kHz

Room -86 - - - -

Channel-to-Channel

Crosstalk eXTALK Room -105 - - - -

Source Off

Capacitance eCS(off) f = 1 MHz

DG4051E Room 2.4 - - - -

DG4052E Room 2.4 - - - -

DG4053E Room 2.3 - - - -

Drain Off

Capacitance eCD(off) f = 1 MHz

DG4051E Room 10.1 - - - -

DG4052E Room 5.3 - - - -

DG4053E Room 3.4 - - - -

Channel On

Capacitance eCD(on) f = 1 MHz

DG4051E Room 15.9 - - - -

DG4052E Room 10.6 - - - -

DG4053E Room 8.9 - - - -

Power Supplies

Power Supply Current I+

VIN(A, B, C, and enable) = 0 V or 5 V

Room 0.05 - 1 - 1

μA

Full - - 10 - 10

Negative Supply

Current I- Room -0.05 -1 - -1 -

Full - -10 - -10 -

Ground Current IGND

Room -0.05 -1 - -1 -

Full - -10 - -10 -

DG4051E, DG4052E, DG4053E

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S16-0623-Rev. A, 11-Apr-16 7Document Number: 69685

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Notes

a. VIN = input voltage to perform proper function.

b. Room = 25 °C, full = as determined by the operating temperature suffix.

c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.

e. Guaranteed by design, not subject to production test.

SPECIFICATIONS FOR UNIPOLAR SUPPLIES

PARAMETER SYMBOL

TEST CONDITIONS

UNLESS OTHERWISE SPECIFIED

V+ = 3 V, V- = 0 V

VIN(A, B, C, and enable) = 1.4 V, 0.6 V a

TEMP. b TYP.

-40 °C to +125 °C -40 °C to +85 °C

UNIT

MIN. dMAX. dMIN. dMAX. d

Analog Switch

Analog Signal Range eVANALOG Full - 0 3 0 3 V

On-Resistance RON IS = 1 mA, VD = 1.5 V Room 221 - - - - 

Full - - - - -

Switch Off

Leakage Current

IS(off) V+ = 3.3 V, V- = 0 V

VD = 0.3 V / 3 V, VS = 3 V / 0.3 V

Room ± 0.02 -1 1 -1 1

Full - -50 50 -5 5

ID(off)

Room ± 0.02 -1 1 -1 1

Full - -50 50 -5 5

Channel On

Leakage Current ID(on) V+ = 3.3 V, V- = 0 V

VD = VS = 0.3 V / 3 V

Room ± 0.02 -1 1 -1 1

Full - -50 50 -5 5

Digital Control

Input Current, VIN Low ILVIN(A, B, C, and enable)

under test = 0.6 V Full 0.02 -1 1 -1 1

μA

Input Current, VIN High IHVIN(A, B, C, and enable)

under test = 1.4 V Full 0.02 -1 1 -1 1

Dynamic Characteristics

Transition Time tTRANS

RL = 300 , CL = 35 pF

see Fig. 1, 2, 3

Room 200 - - - -

Full - - - - -

Enable Turn-On Time tON

Room 130 - - - -

Full - - - - -

Enable Turn-Off Time tOFF

Room 78 - - - -

Full - - - - -

Break-Before-Make

Time Delay tD

Room 130 - - - -

Full - - - - -

Charge Injection eQV

g = 0 V, Rg = 0 , CL = 1 nF Room 0.34 - - - - pC

Off Isolation eOIRR RL = 50 , CL = 1 pF

f = 100 kHz

Room -88 - - - -

Channel-to-Channel

Crosstalk eXTALK Room -105 - - - -

Source Off

Capacitance eCS(off) f = 1 MHz

DG4051E Room 2.6 - - - -

DG4052E Room 2.6 - - - -

DG4053E Room 2.5 - - - -

Drain Off Capacitance

CD(off) f = 1 MHz

DG4051E Room 10.7 - - - -

DG4052E Room 5.7 - - - -

DG4053E Room 3.6 - - - -

Channel On

Capacitance eCD(on) f = 1 MHz

DG4051E Room 16.4 - - - -

DG4052E Room 10.9 - - - -

DG4053E Room 9.1 - - - -

Power Supplies

Power Supply Current I+

VIN(A, B, C, and enable) = 0 V or 3 V

Room 0.05 - 1 - 1

μA

Full - - 10 - 10

Negative Supply

Current I- Room -0.05 -1 - -1 -

Full - -10 - -10 -

Ground Current IGND

Room -0.05 -1 - -1 -

Full - -10 - -10 -

DG4051E, DG4052E, DG4053E

www.vishay.com Vishay Siliconix

S16-0623-Rev. A, 11-Apr-16 8Document Number: 69685

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

On-Resistance vs. Analog Voltage (Single Supply)

On-Resistance vs. Analog Voltage (Temperature)

On-Resistance vs. Analog Voltage (Dual Supply)

On-Resistance vs. Analog Voltage (Temperature)

Supply Current vs. Input Switching Frequency

100

150

200

250

300

350

400

024681012141618

RON - On-Resistance ()

VD- Analog Voltage (V)

V+ = +3.0 V, V- = 0 V

V+ = +5.0 V, V- = 0 V

V+ = +12.0 V, V- =0 V

V+ = +16.0 V, V- = 0 V

TA= 25 °C

IS= -1 mA

100

125

150

175

200

225

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

RON - On-Resistance ()

VD- Analog Voltage (V)

+125

+85

+25

-40

V+ = +5 V

v- = 0 V

IS= 1 mA

100

120

140

-5 -4 -3 -2 -1 0 1 2 3 4 5

RON - On-Resistance ()

VD- Analog Voltage (V)

+125

+85

+25 °C-40 °C

V+ = +5 V

v- = -5 V

IS= 1 mA

100

120

140

-10-8-6-4-20246810

RON - On-Resistance ()

VD- Analog Voltage (V)

V+ = +5.0 V, V- = -5.0 V

V+ = +8.0 V, V- = -8.0 V

TA= 25 °C

IS= -1 mA

100

120

140

0123456789101112

RON - On-Resistance ()

VD- Analog Voltage (V)

+125 °C+85 °C

+25 °C-40 °C

V+ = +12 V

v- = 0 V

IS= 1 mA

0.000001

0.00001

0.0001

0.001

0.01

0.1

100

1000

10 000

10 100 1000 10K 100K 1M 10M

Supply Current (μA)

Input Switching Frequency (Hz)

I+

I-

IGND

V+ = +5 V

V- = -5 V

DG4051E, DG4052E, DG4053E

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Leakage Current vs. Temperature

Switching Time vs. Temperature (Single Supply)

DG4051E Insertion Loss, Off-Isolation,

Crosstalk vs. Frequency

Leakage Current vs. Temperature

Switching Time vs. Temperature (Dual Supply)

DG4052E Insertion Loss, Off-Isolation,

Crosstalk vs. Frequency

100

1000

10 000

100 000

-60 -40 -20 0 20 40 60 80 100 120 140

Leakage Current (pA)

Temperature (°C)

ID(OFF), VD= 4.5 V, VS= -4.5 V

V+ = +5.5 V

V- = -5.5 V ID(ON), VD= 4.5 V

IS(OFF), VD= 4.5 V, VS= -4.5 V

100

125

150

175

200

-60 -10 40 90 140

tON(EN), tOFF(EN) - Switching Time (ns)

Temperature (°C)

V+ = +3 V, V- = 0 V, tON

V+ = +5 V, V- = 0 V, tON

V+ = +16 V, V- = 0 V, tON

V+ = +3 V, V- = 0 V, tOFF

V+ = +5 V, V- = 0 V, tOFF

V+ = +16 V, V- = 0 V, tOFF

V+ = +12 V, V- = 0 V, tON

V+ = +12 V, V- = 0 V, tOFF

-110

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

100K 1M 10M 100M 1G

Loss, OIRR, XTALK (dB)

Frequency (Hz)

Loss

DG4051E

V+ = +5 V

V- = -5 V

RL= 50 

OIRR

TALK

100

1000

10 000

100 000

-60 -40 -20 0 20 40 60 80 100 120 140

Leakage Current (pA)

Temperature (°C)

ID(OFF), VD= 12.2 V, VS= 1.0 V

V+ = +13.2 V

V- = -0 V ID(ON), VD= 12.2 V

IS(OFF), VD= 12.2 V, VS= 1.0 V

-60 -10 40 90 140

tON(EN), tOFF(EN) - Switching Time (ns)

Temperature (°C)

V+ = +5 V, V- = 5 V, tON

V+ = +5 V, V- = -5 V, tOFF

V+ = +8 V, V- = -8 V, tON

V+ = +8 V, V- = -8 V, tOFF

-110

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

100K 1M 10M 100M 1G

Loss, OIRR, XTALK (dB)

Frequency (Hz)

Loss

DG4052E

V+ = +5 V

V- = -5 V

RL= 50 

OIRR

TALK

DG4051E, DG4052E, DG4053E

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

DG4053E Insertion Loss, Off-Isolation,

Crosstalk vs. Frequency

DG4051E Charge Injection vs. Analog Voltage

DG4052E Charge Injection vs. Analog Voltage

Switching Threshold vs. V+ Supply Voltage

DG4053E Charge Injection vs. Analog Voltage

-110

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

100K 1M 10M 100M 1G

Loss, OIRR, XTALK (dB)

Frequency (Hz)

Loss

DG4053E

V+ = +5 V

V- = -5 V

RL= 50 

OIRR

TALK

-1.0

-0.8

-0.6

-0.4

-0.2

0.2

0.4

0.6

0.8

1.0

-6-5-4-3-2-10123456

QINJ - Charge Injection (pC)

VS- Analog Voltage (V)

V+ = 5 V

V- = 0 V

V+ = 5 V

V- = -5 V

V+ = 3 V

V- = 0 V

-1.0

-0.8

-0.6

-0.4

-0.2

0.2

0.4

0.6

0.8

1.0

-6-5-4-3-2-10123456

QINJ - Charge Injection (pC)

VS- Analog Voltage (V)

V+ = 5 V

V- = 0 V

V+ = 5 V

V- = -5 V

V+ = 3 V

V- = 0 V

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

3.0

0 2 4 6 8 10 12 14 16 18 20

VT- Switching Threshold (V)

V+ - Supply Voltage (V)

VIH = -40 °C

VIL = 125 °C

-40 °C to +125 °C

-1.0

-0.8

-0.6

-0.4

-0.2

0.2

0.4

0.6

0.8

1.0

-6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6

QINJ - Charge Injection (pC)

VS- Analog Voltage (V)

V+ = 5 V

V- = 0 V

V+ = 5 V

V- = -5 V

V+ = 3 V

V- = 0 V

DG4051E, DG4052E, DG4053E

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SCHEMATIC DIAGRAM (Typical Channel)

TEST CIRCUITS

Fig. 1 - Transition Time

A, B

X0, Y0, Z0

X, Y, Z

V+

Xn, Yn, Zn

V-

Decode/

drive

Level

shift

V-

V+

GND Body

snatcher

V-

ENABLE

GND

V-

V+

50 Ω

300 Ω 35 pF

X1 - X6

DG4051E

ENABLE

GND

V-

V+

50 Ω

300 Ω 35 pF

X or Y

X0 or Y0

X3 or Y3

X1 - X2 or

Y1 - Y2

DG4052E

or V

A or B

or C

ENABLE

GND

V-

V+

50 Ω

300 Ω 35 pF

X or Y or Z

X0 or Y0

or Z0

X1 or Y1 or Z1

DG4053E

or V

0 V

V+

50 %

90 %

tTRANS

X0 or Y0 or Z0 ON X7 ON (DG4051E)

X3 or Y3 ON (DG4052E)

X1 or Y1 or Z1 ON

(DG4053E)

A,B,C

or V

tTRANS

90 %

DG4051E, DG4052E, DG4053E

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TEST CIRCUITS

Fig. 2 - Enable Switching Time

ENABLE

GND

V-

V+

50 Ω 300 Ω 35 pF

X1 - X7

DG4051E

ENABLE

GND

V-

V+

50 Ω 300 Ω 35 pF

X or Y

X0 or Y0

X1 - X3 or

Y1 - Y3

DG4052E

A or B

or C

ENABLE

GND

V-

V+

50 Ω 300 Ω 35 pF

X or Y or Z

X0 or Y0

or Z0

X1 or Y1 or Z1

DG4053E

0 V

V+

50 %

90 %

OFF

X0 or Y0 or Z0 ON X7 ON (DG4051E)

X3 or Y3 ON (DG4052E)

X1 or Y1 or Z1 ON

(DG4053E)

ENABLE

or V

V+

0 V

V+

90 %

DG4051E, DG4052E, DG4053E

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TEST CIRCUITS

Fig. 3 - Break-Before-Make

Fig. 4 - Charge Injection

ENABLE

GND

V-

V+

50 Ω

300 Ω 35 pF

X0 - X7

DG4051E

ENABLE

GND

V-

V+

50 Ω

300 Ω 35 pF

X or Y

X0 - X3 or

Y0- Y3

DG4052E

A or B

or C

ENABLE

GND

V-

V+

50 Ω

300 Ω 35 pF

X or Y or Z

X0, X1 or Y0,

Y1 or Z0, Z1

DG4053E

0 V

V+

50 %

80 %

A,B,C

or V

V+

0 V

ENABLE

GND

V-

V+

1 nF

X or Y or Z

Xx or Yx or Zx

0 V

V+

VENABLE

Channel

Select

OFF OFF

ΔVO

tr < 5 ns

tf < 5 ns

DG4051E, DG4052E, DG4053E

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TEST CIRCUITS

Fig. 5 - Insertion Loss

Fig. 6 - Crosstalk

Fig. 7 - Off Isolation

Fig. 8 - Source, Drain Capacitance

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see www.vishay.com/ppg?69685.

ENABLE

GND

V-

V+

VOUT

X or Y or Z

X0 or Y0 or Z0

Rg = 50 Ω

50 Ω

VIN

Network Analyzer

Insertion Loss = 20 log VOUT

VIN

ENABLE

GND

V-

V+

VOUT

X or Y or Z

X0 or Y0 or Z0

Rg = 50 Ω

50 Ω

VIN

Network Analyzer

Crosstalk = 20 log VOUT

VIN

50 Ω Xx or Yx or Zx

ENABLE

GND

V-

V+

VOUT

X or Y or Z

X0 or Y0 or Z0

Rg = 50 Ω

50 Ω

VIN

Network Analyzer

Off Isolation = 20 log VOUT

VIN

V+

ENABLE

GND

V-

V+

X or Y or Z

X0 or Y0 or Z0

Xx or Yx or Zx Impedance

Analyzer

Channel

Select

Package Information

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Revision: 09-May-16 1Document Number: 64694

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Thin miniQFN16 Case Outline

Notes

(1) Use millimeters as the primary measurement.

(2) Dimensioning and tolerances conform to ASME Y14.5M. - 1994.

(3) N is the number of terminals. Nd and Ne is the number of terminals in each D and E site respectively.

(4) Dimensions b applies to plated terminal and is measured between 0.15 mm and 0.30 mm from terminal tip.

(5) The pin 1 identifier must be existed on the top surface of the package by using identification mark or other feature of package body.

(6) Package warpage max. 0.05 mm.

DIMENSIONS MILLIMETERS (1) INCHES

MIN. NOM. MAX. MIN. NOM. MAX.

A 0.50 0.55 0.60 0.020 0.022 0.024

A1 0 - 0.05 0 - 0.002

A3 0.15 ref. 0.006 ref.

b 0.15 0.20 0.25 0.006 0.008 0.010

D 2.50 2.60 2.70 0.098 0.102 0.106

e 0.40 BSC 0.016 BSC

E1.70

1.80 1.90 0.067 0.071 0.075

L 0.35 0.40 0.45 0.014 0.016 0.018

L1 0.45 0.50 0.55 0.018 0.020 0.022

N (3) 16 16

Nd (3) 44

Ne (3) 44

ECN: T16-0226-Rev. B, 09-May-16

DWG: 6023

0.10 C

0.10

0.10 C

Side view

Top view Bottom view

12 11 10

16 L1

1234

Pin #1 identier (5)

Seating

plane

Terminal tip (4)

16 x b

0.10

0.05

1211109

15 x L

321

All Leads

0.101 mm

0.004 IN

e B A1 LĬ

4312 8756

131416 15 91012 11

Package Information

Vishay Siliconix

Document Number: 71194

02-Jul-01 www.vishay.com

SOIC (NARROW): 16ĆLEAD

JEDEC Part Number: MS-012

MILLIMETERS INCHES

Dim Min Max Min Max

A1.35 1.75 0.053 0.069

A10.10 0.20 0.004 0.008

B0.38 0.51 0.015 0.020

C0.18 0.23 0.007 0.009

D9.80 10.00 0.385 0.393

E3.80 4.00 0.149 0.157

e1.27 BS C 0.050 BSC

H5.80 6.20 0.228 0.244

L0.50 0.93 0.020 0.037

Ĭ0_8_0_8_

ECN: S-03946—Rev. F, 09-Jul-01

DWG: 5300

Vishay Siliconix

Package Information

Document Number: 74417

23-Oct-06

www.vishay.com

Symbols

DIMENSIONS IN MILLIMETERS

Min Nom Max

A - 1.10 1.20

A1 0.05 0.10 0.15

A2 - 1.00 1.05

B 0.22 0.28 0.38

C - 0.127 -

D 4.90 5.00 5.10

E 6.10 6.40 6.70

E1 4.30 4.40 4.50

e-0.65-

L 0.50 0.60 0.70

L1 0.90 1.00 1.10

y--0.10

θ10°3°6°

ECN: S-61920-Rev. D, 23-Oct-06

DWG: 5624

TSSOP: 16-LEAD

PAD Pattern

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RECOMMENDED MINIMUM PAD FOR TSSOP-16

0.281

(7.15)

Recommended Minimum Pads

Dimensions in inches (mm)

0.171

(4.35)

0.055

(1.40)

0.012

(0.30)

0.026

(0.65)

0.014

(0.35)

0.193

(4.90)

Document Number: 66557 www.vishay.com

Revision: 05-Mar-10 1

PAD Pattern

Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR MINI QFN 16L

0.400

(0.0157)

0.225

(0.0089)

0.463

(0.0182)

0.562

(0.0221)

2.900

(0.1142)

1.200

(0.0472)

2.100

(0.0827)

Mounting Footprint

Dimensions in mm (inch)

Application Note 826

Vishay Siliconix

www.vishay.com Document Number: 72608

24 Revision: 21-Jan-08

APPLICATION NOTE

RECOMMENDED MINIMUM PADS FOR SO-16

0.246

(6.248)

Recommended Minimum Pads

Dimensions in Inches/(mm)

0.152

(3.861)

0.047

(1.194)

0.028

(0.711)

0.050

(1.270)

0.022

(0.559)

0.372

(9.449)

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Revision: 08-Feb-17 1Document Number: 91000

Disclaimer



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Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or

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including but not limited to the warranty expressed therein.

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