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QSE773 — Sidelooker Pin Photodiode
©2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
FODMXXX Rev. 1.0.2
August 2013
QSE773
Sidelooker Pin Photodiode
Features
Daylight filter
Sidelooker package
Pin photodiode
Wide reception angle, 120°
Chip size = 0.107 sq. inches (2.71 sq. mm)
Description
The QSE773 is a plastic silicon pin photodiode in a
sidelooker package.
Package Dimensions
Notes:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ±0.010 (0.25) on all non-nominal dimensions unless otherwise specified.
Schematic
0.215 (5.46)
0.199 (5.06)
0.311 (7.90)
0.288 (7.30)
0.100 (2.54)
0.060 (1.52)
0.610 (15.49)
MIN
0.126 (3.20)
0.110 (2.80)
0.020 (0.51)
SQ. (2x)
0.116 (2.95)
0.100 (2.54)
C
L
SENSING
SURFACE
ANODE
ANODE
CATHODE
©2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
FODMXXX Rev. 1.0.2 2
QSE773 — Sidelooker Pin Photodiode
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise noted)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Notes:
3. Derate power dissipation linearly 2.50mW/°C above 25°C.
4. RMA flux is recommended.
5. Methanol or Isopropyl alcohols are recommended as cleaning agents.
6. Soldering iron tip 1/16” (1.6 mm) from housing.
7. As long as leads are not under any stress or spring tension.
Electrical Characteristics
(T
A
= 25°C)
Notes:
8. Light source is an GaAs LED which has a peak emission wavelength of 940nm.
9. All measurements made under pulse conditions.
Symbol Parameters Value Units
T
OPR
Operating Temperature -40 to +85 °C
T
STG
Storage Temperature -40 to +85 °C
T
SOL-I
Soldering Temperature (Iron)
(4)(5)(6)(7)
240 for 5 sec. °C
T
SOL-F
Soldering Temperature (Flow)
(4)(5)(7)
260 for 10 sec °C
V
R
Reverse Voltage 32 V
P
D
Power Dissipation
(3)
150 mW
Symbol Parameter Test Conditions Min. Typ. Max. Units
V
R
Reverse Voltage I
R
= 0.1mA, 32 V
I
R(D)
Dark Reverse Current V
R
= 10 V, 30 nA
λ
PK
Peak Sensitivity V
R
= 5V 940 nm
Θ
Reception Angle at 1/2 Power ±60 °
I
PH
Photo Current
(8)
E
e
= 1.0mW/cm
2
V
R
= 5V 30 µA
I
SC
Short Circuit Current
(8)
E
e
= 1.0mW/cm
2
18 µA
C Capacitance V
R
= 3V 25 pF
t
r
Rise Time V
R
= 5V, R
L
= 1k
50 ns
t
f
Fall Time V
R
= 5V, R
L
= 1k
50 ns
E2
e = 0mW/cmE 2
e = 0mW/cmE 2
,
©2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
FODMXXX Rev. 1.0.2 3
QSE773 — Sidelooker Pin Photodiode
Typical Performance Curves
IR - DARK CURRENT (nA)
IR - DARK CURRENT (pA)
VR - REVERSE VOLTAGE (V)
VR - REVERSE VOLTAGE (V)
CAP ACITANCE (pF)
100
80
60
40
20
0
0.01 0.1 1 10 100
f = 1MHz
E = 0
1000
100
10
10102030405060708090100
VR
= 10V
E = 0
1200
1000
800
600
400
200
0
02468101214161820
E = 0
1.0
0.8
0.6
0.4
0.2
0
700 800 900 1000 1100
λ- WAVELENGTH (nm)
Fig. 1 Relative Spectral Sensitivity vs. Wavelength
120
100
80
60
40
20
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Ee - IRRADIANCE (mW/cm2)
Fig.
Fig. 3 Short Circuit Current vs. Temperature
Fig. 5 Dark Current vs. Temperature Fig. 6 Dark Current vs. Reverse Voltage
Fig. 4 Capacitance vs. Reverse Voltage
2 Short Circuit Current vs. Irradiance
ISC - SHORT CIRCUIR CURRENT (µA)
ISC - SHORT CIRCUIR CURRENT (µA)
Wavelength = 940nm
TA = 25˚C
S (λ)rel - RELATIVE SPECTRAL SENSITIVITY
-20 -10 0 10 20 30 40 50 60 70
0
5
10
15
20
25
30
TA - TEMPERATURE (°C)
TA - TEMPERATURE (°C)
©2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
FODMXXX Rev. 1.0.2 4
QSE773 — Sidelooker Pin Photodiode
www.onsemi.com
1
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ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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