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R08DS0008EJ0300 Rev.3.00 Page 1 of 6
Sep 19, 2010
NX7539BB-AA
LASER DIODE
1 550 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
DESCRIPTION
The NX7539BB-AA is a 1 550 nm Multiple Quantum Well (MQW) structured
Fabry-Perot (FP) laser diode coaxial module with single mode fiber. This
module is specified to operate under pulsed condition and designed for light
source of Optical Time Domain Reflectometer (OTDR).
FEATURES
High output power Pf = 40 mW @ IFP = 400 mA*1
Long wavelength C = 1 550 nm
*1 Pulse Conditions: Pulse width (PW) = 10
s, Duty = 1%
Data Sheet
R08DS0008EJ0300
Rev.3.00
Sep 19, 2010
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NX7539BB-AA
R08DS0008EJ0300 Rev.3.00 Page 2 of 6
Sep 19, 2010
PACKAGE DIMENSIONS (UNIT: mm)
OPTICAL FIBER CHARACTERISTICS
Parameter
Specification
Unit
Mode Field Diameter
9.30.5
m
Cladding Diameter
1252
m
Maximum Cladding Noncircularity
2
%
Maximum Core/Cladding Concentricity
1.6
%
Outer Diameter
0.90.1
mm
Cut-off Wavelength
1 140 to 1 280
nm
Minimum Fiber Bending Radius
30
mm
Fiber Length
1 000 MIN.
mm
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NX7539BB-AA
R08DS0008EJ0300 Rev.3.00 Page 3 of 6
Sep 19, 2010
ORDERING INFORMATION
Part Number
NX7539BB-AA
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Ratings
Unit
Pulsed Forward Current*1
IFP
600
mA
Reverse Voltage
VR
2.0
V
Operating Case Temperature
TC
20 to +60
C
Storage Temperature
Tstg
40 to +85
C
Lead Soldering Temperature
Tsld
350 (3 sec.)
C
Relative Humidity (noncondensing)
RH
85
%
*1 Pulse Condition: Pulse Width (PW) = 10
s, Duty = 1%
ELECTRO-OPTICAL CHARACTERISTICS (TC = 25C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Forward Voltage
VFP
IFP = 400 mA,
PW = 10
s, Duty = 1%
2.5
4.0
V
Threshold Current
Ith
40
50
mA
Optical Output Power from Fiber
Pf
IFP = 400 mA,
PW = 10
s, Duty = 1%
20
40
mW
Center Wavelength
C
RMS (20 dB), IFP = 400 mA,
PW = 10
s, Duty = 1%
1 530
1 550
1 570
nm
Spectral Width
RMS (20 dB), IFP = 400 mA,
PW = 10
s, Duty = 1%
6.0
10.0
nm
Rise Time
tr
10-90%
2.0
ns
Fall Time
tf
90-10%
2.0
ns
ELECTRO-OPTICAL CHARACTERISTICS (TC = 0 to +60C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Threshold Current
Ith
75
mA
Optical Output Power from Fiber
Pf
IFP = 400 mA,
PW = 10
s, Duty = 1%
10
mW
Center Wavelength
C
RMS (20 dB), IFP = 400 mA,
PW = 10
s, Duty = 1%
1 520
1 585
nm
Temperature Dependency of
Center Wavelength
/
T
0.35
nm/C
Spectral Width
RMS (20 dB), IFP = 400 mA,
PW = 10
s, Duty = 1%
10
nm
NX7539BB-AA
R08DS0008EJ0300 Rev.3.00 Page 4 of 6
Sep 19, 2010
TYPICAL CHARACTERISTICS (TC = 25C, unless otherwise specified)
Remark The graphs indicate nominal characteristics.
NX7539BB-AA
R08DS0008EJ0300 Rev.3.00 Page 5 of 6
Sep 19, 2010
REFERENCE
Document Name
Document No.
Opto-Electronics Devices Pamphlet*1
PX10160E
*1 Published by the former NEC Electronics Corporation.
NX7539BB-AA
R08DS0008EJ0300 Rev.3.00 Page 6 of 6
Sep 19, 2010
SAFETY INFORMATION ON THIS PRODUCT
Warning Laser Beam
A laser beam is emitted from this diode during operation.
The laser beam, visible or invisible, directly or indirectly, may cause injury to the eye or loss of
eyesight.
Do not look directly into the laser beam.
Avoid exposure to the laser beam, any reflected or collimated beam.
Caution GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
Do not burn, destroy, cut, crush, or chemically dissolve the product.
Do not lick the product or in any way allow it to enter the mouth.
Caution Optical Fiber
A glass-fiber is attached on the product. Handle with care.
When the fiber is broken or damaged, handle carefully to avoid injury from the damaged part
or fragments.
DANGER
INVISIBLE LASER RADIATION
AVOID DIRECT EXPOSURE TO BEAM
OUTPUT POWER mW MAX
nmWAVELENGTH
CLASS lllb LASER PRODUCT
AVOID EXPOSURE-Invisible
Laser Radiation is emitted from
this aperture
SEMICONDUCTOR LASER
All trademarks and registered trademarks are the property of their respective owners.
C - 1
Revision History
NX7539BB-AA Data Sheet
Rev.
Date
Description
Page
Summary
Jul 2006
Previous No. : PL10607EJ02V0DS
3.00
Sep 19, 2010
p.1
Modification of photograph
p.2, 3
Modification of PACKAGE DIMENSIONS
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