DATA SHEE
T
SURFACE-MOUNT CERAMIC
MULTILAYER CHIP VARISTORS
VR0402/0603
5.5 V TO 38
V
RoHS compliant & Halogen Free
Product Specification – January 03, 2012 V.5
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J
an 03, 2012 V.5
Surface-Mount Ceramic MULTILAYER CHIP VARISTORS
2
10
Product specification
VR
5.5 V to 38 V
0402 / 0603
SCOPE
This specification describes chip
varistors with lead-free terminations.
APPLICATIONS
Consumer electronic equipment
Telecommunications
Notebook
Electronic data processing
FEATURES
Excellent clamping voltage
Excellent energy dissipation
capability
Quick response time (<1n sec.)
Adjustable capacitance values
High reliability
High transient current capability
Symmetrical voltage-current
characteristics
ORDERING INFORMATION
-
GLOBAL PAR
T
NUMBER, PHYCOMP
CTC & 12NC
All part numbers are identified by the series, size, tolerance, TC material,
packing style, voltage, process code, termination and capacitance value.
Y
YA
AG
GE
EO
O
B
BR
RA
AN
ND
D
o
or
rd
de
er
ri
in
ng
g
c
co
od
de
e
GLOBAL PART NUMBER (
PREFERRED
)
VRS
XXXX X
R
XXX XXX X
(1) (2) (3) (4) (5)
(1) SIZE – INCH BASED (METRIC)
0402 (1005)
0603 (1608)
(2) TOLERANCE
K = ±10%
L = ±15%
M = ±20%
S = Normal range
(3) WORKING VOLTAGE
2 significant digits+number of zeros
The 3rd digit signifies the multiplying factor, and letter R is decimal point
Example: 55R = 55 x 10-1 = 5.5 V, 380 = 38 x 101 = 38 V
(4) CAPACITANCE VALUE
2 significant digits+number of zeros The 3rd digit signifies the multiplying factor, and
letter R is decimal point
Example: 121 = 12 x 10
1
= 120 pF
(5) PROCESS CODE
N = Normal
S = ESD up to 10 KV
E = ESD up to 15 KV
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J
an 03, 2012 V.5
Surface-Mount Ceramic MULTILAYER CHIP VARISTORS
3
10
Product specification
VR
5.5 V to 38 V
0402 / 0603
CONSTRUCTION
Lead Free terminations, NiSn terminations
Surface mount multilayer surge suppressor
Very short response time (<1.0 nsec)
Bidirectional clamping
Low capacitance for high frequency applications
Very low leakage current
L
2
/ L
3
(mm) L
4
(mm)
TYPE L
1
(mm) W (mm) T (MM) min. max. min.
0402
1.0 ±0.10 0.5 ±0.10 0.5 ±0.10 0.15
0.30
0.40
0603
1.6 ±0.15 0.8 ±0.15 0.8 ±0.10 0.20 0.60 0.40
Ta b l e 1 For outlines see fig. 2
DIMENSION
MBB211
T
L4
L1
L2L3
W
O
OU
UT
TL
LI
IN
NE
ES
S
For dimension see Table 1
Fig. 2 Surface mounted multilayer
ceramic capacitor dimension
Fig. 1 Cross-section of a multilayer capacitor
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J
an 03, 2012 V.5
Surface-Mount Ceramic MULTILAYER CHIP VARISTORS
4
10
Product specification
VR
5.5 V to 38 V
0402 / 0603
ELECTRICAL CHARACTERISTICS
VARISTOR/
BREAKDOWN VOL.
MAX. WORKING
VOL.
CLAMPING
VOL.@1A
PEAK
CURRENT
LEAKAGE CURRENT
R.T. (15~35 °C)
CAPACITANCE
@ 1V (RMS)
PART NUMBER
DC
@
1m
A
D.C
(
max.
)
8/20
µ
S
(
max.
)
8/20
µ
S
(
max.
)
V
olta
g
eCurrent
1KHz 1MHz
VRS0402SR55R220N
10 V ~ 14 V 5.5 V 22 V
2 A
5.5 V 10 µA
22 pF 12 pF
VRS0402SR55R330N
10 V ~ 14 V 5.5 V 22 V
4 A
5.5 V 10 µA
33 pF 20 pF
VRS0402SR55R500N
10 V ~ 14 V 5.5 V 22 V
6 A
5.5 V 10 µA
50 pF 30 pF
VRS0402SR55R101N
10 V ~ 14 V 5.5 V 22 V
10 A
5.5 V 10 µA
100 pF 60 pF
VRS0402MR55R101N
7.2 V ~ 10.8 V 5.5 V 18 V
10 A
5.5 V 10 µA
100 pF 60 pF
VRS0402MR55R201N
7.2 V ~ 10.8 V 5.5 V 18 V
15 A
5.5 V 10 µA
200 pF 130 pF
VRS0402MR55R301N
7.2 V ~ 10.8 V 5.5 V 18 V
15 A
5.5 V 10 µA
300 pF ---
VRS0402MR55R361N
7.2 V ~ 10.8 V 5.5 V 18 V
20 A
5.5 V 10 µA
360 pF 220 pF
VRS0402MR55R481N
7.2 V ~ 10.8 V 5.5 V 18 V
20 A
5.5 V 10 µA
480 pF 290 pF
VRS0402MR55R651N
7.2 V ~ 10.8 V 5.5 V 18 V
30 A
5.5 V 10 µA
650 pF 390 pF
VRS0402KR090500N
10.8 V ~ 13.2
V
9 V 22 V
6 A
9 V 20 µA
50 pF 30 pF
VRS0402LR090500N
10.2 V ~ 13.8
V
9 V 22 V
6 A
9 V 20 µA
50 pF 30 pF
VRS0402LR090201N
10.2 V ~ 13.8
V
9 V 22 V
15 A
9 V 20 µA
200 pF 120 pF
VRS0402SR140500N
18 V ~ 24 V 14 V 38 V
7 A
14 V 20 µA
50 pF 30 pF
VRS0402SR140101N
18 V ~ 24 V 14 V 38 V
15 A
14 V 20 µA
100 pF 60 pF
VRS0402SR140121N
18 V ~ 24 V 14 V 38 V
15 A
14 V 20 µA
120 pF 72 pF
VRS0402MR140161N
14.4 V ~ 21.6
V
14 V 35 V
20 A
14 V 20 µA
160 pF 96 pF
VRS0402KR140161N
16.2 V ~ 19.8
V
14 V 33 V
20 A
14 V 20 µA
160 pF 96 pF
VRS0402SR180010N
90 V ~ 135 V 18 V 250 V
1 A
18 V 10 µA
--- 1 pF
VRS0402SR180030N
50 V ~ 80 V 18 V 130 V
1 A
18 V 10 µA
3 pF 2 pF
VRS0402SR180050N
50 V ~ 80 V 18 V 130 V
2 A
18 V 10 µA
5 pF 3 pF
VRS0402SR180100N
24 V ~ 32 V 18 V 66 V
3 A
18 V 10 µA
10 pF 5.5 pF
VRS0402SR180100S
22 V ~ 34 V 18 V 66 V
2 A
18 V 10 µA
10 pF 5.5 pF
VRS0402SR180100E
22 V ~ 34 V 18 V 66 V
2 A
18 V 10 µA
10 pF 5.5 pF
VRS0402SR180150N
24 V ~ 32 V 18 V 66 V
3 A
18 V 10 µA
15 pF 9 pF
VRS0402SR180270N
24 V ~ 32 V 18 V 66 V
4 A
18 V 10 µA
27 pF 15 pF
VRS0402SR180400N
24 V ~ 32 V 18 V 66 V
4 A
18 V 10 µA
40 pF 22 pF
VRS0402SR180500N
24 V ~ 32 V 18 V 66 V
4 A
18 V 10 µA
50 pF 30 pF
VRS0402KR180820N
21.6 V ~ 26.4
V
18 V 56 V
10 A
18 V 35 µA
82 pF 50 pF
VRS0402SR180121N
24 V ~ 32 V 18 V 66 V
15 A
18 V 10 µA
120 pF 72 pF
VRS0402SR300030N
50 V ~ 80 V 30 V 130 V
1 A
18 V 10 µA
3 pF ---
Ta b l e 2 Size 0402
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J
an 03, 2012 V.5
Surface-Mount Ceramic MULTILAYER CHIP VARISTORS
5
10
Product specification
VR
5.5 V to 38 V
0402 / 0603
ELECTRICAL CHARACTERISTICS
VARISTOR/
BREAKDOWN VOL.
MAX. WORKING
VOL.
CLAMPING
VOL.@1A
PEAK
CURRENT
LEAKAGE CURRENT
R.T. (15~35 °C)
CAPACITANCE
@ 1V (RMS)
PART NUMBER
DC
@
1m
A
D.C
(
max.
)
8/20
µ
S
(
max.
)
8/20
µ
S
(
max.
)
V
olta
g
eCurrent
1KHz 1MHz
VRS0603SR55R181N
10 V ~ 14 V 5.5 V 20 V
20 A
5.5 V 10 µA
180 pF 100 pF
VRS0603MR55R301N
7.2 V ~ 10.8 V 5.5 V 18 V
30 A
5.5 V 10 µA
300 pF 180 pF
VRS0603MR55R361N
7.2 V ~ 10.8 V 5.5 V 18 V
30 A
5.5 V 10 µA
360 pF 180 pF
VRS0603SR55R471N
10 V ~ 14 V 5.5 V 20 V
30 A
5.5 V 10 µA
470 pF 280 pF
VRS0603MR55R681N
7.2 V ~ 10.8 V 5.5 V 18 V
30 A
5.5 V 10 µA
680 pF 410 pF
VRS0603MR55R801N
7.2 V ~ 10.8 V 5.5 V 18 V
30 A
5.5 V 10 µA
800 pF 480 pF
VRS0603MR55R901N
7.2 V ~ 10.8 V 5.5 V 18 V
30 A
5.5 V 10 µA
900 pF 540 pF
VRS0603SR090090N
18 V ~ 24 V 9 V 36 V
3 A
9 V 20 µA
9 pF 5.5 pF
VRS0603KR140351N
16.2 V ~ 19.8
V
14 V 33 V
30 A
14 V 20 µA
350 pF ---
VRS0603SR180030N
50 V ~ 80 V 18 V 130 V
1 A
18 V 10 µA
3 pF 2 pF
VRS0603SR180050N
50 V ~ 80 V 18 V 130 V
2 A
18 V 10 µA
5 pF 3 pF
VRS0603SR180100N
24 V ~ 32 V 18 V 66 V
5 A
18 V 10 µA
10 pF 6 pF
VRS0603SR180150N
24 V ~ 32 V 18 V 66 V
3 A
18 V 10 µA
15 pF 10 pF
VRS0603SR180121N
24 V ~ 32 V 18 V 66 V
20 A
18 V 10 µA
120 pF 72 pF
VRS0603KR300121N
35.1 V ~ 42.9
V
30 V 86 V
20 A
30 V 35 µA
120 pF 72 pF
VRS0603KR310161N
35.1 V ~ 42.9
V
31 V 86 V
20 A
31 V 35 µA
160 pF 96 pF
Ta b l e 3 Size 0603
STANDARD TESTING CONDITION
1. Temperature: 15 °C to 35 °C
2. Humidity: 25% RH to 85% RH
3. Atmospheric pressure: 86 to 106 kPa
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J
an 03, 2012 V.5
Surface-Mount Ceramic MULTILAYER CHIP VARISTORS
6
10
Product specification
VR
5.5 V to 38 V
0402 / 0603
E
ES
SD
D
(
(E
EL
LE
EC
CT
TR
RO
OS
ST
TA
AT
TI
IC
C
D
DI
IS
SC
CH
HA
AR
RG
GE
E)
)
T
TE
ES
ST
T
ESD discharge circuit according to IEC 61000-4-2
Device under test150 pF
100 M
Ω
330
Ω
High voltage source
SCV002
Fig. 3 ESD discharge circuit diagram
S
SP
PE
EC
CI
IF
FI
IC
CA
AT
TI
IO
ON
N
O
OF
F
E
EL
LE
EC
CT
TR
RO
OS
ST
TA
AT
TI
IC
C
D
DI
IS
SC
CH
HA
AR
RG
GE
E
(
(E
ES
SD
D)
)
T
TE
ES
ST
T:
:
According to standard EN 61000-4-2, up to 8 KV direct contact (contact discharge)
Table 4
THICKNESS CLASSES AND PACKING QUAN
T
ITY
SIZE CODE THICKNESS CLASSIFICATION
TAPE WIDTH
QUANTITY PER REEL
Ø180 MM / 7 INCH
(
PAPER
)
0402
0.5 ±0.03 mm
8 mm
10,000
0603
0.8 ±0.1 mm
8 mm
4,000
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J
an 03, 2012 V.5
Surface-Mount Ceramic MULTILAYER CHIP VARISTORS
7
10
Product specification
VR
5.5 V to 38 V
0402 / 0603
METHOD OF MOUNTING
For normal use the varistor may be mounted on
printed-circuit boards or ceramic substrates by applying
wave soldering, reflow soldering (including vapour
phase soldering) or conductive adhesive in accordance
with CECC 00802 classification A. For advised
soldering profiles see Figs 4, 5, and 6.
0 50 100 150 200 250
300
250
200
150
100
50
0
10 s
260 °C
130 °C
(°C)
t (s)
SCV004
245 °C
215 °C
180 °C
10 s
40 s
2 K/s
T
Fig. 4 Reflow soldering
A
n improper combination of soldering, substrate and
chip size can lead to a damaging of the component. The
risk increases with the chip size and with temperature
fluctuations (>100 °C). More detailed information is
available on request.
Typical values (solid line) Process limits (dotted lines)
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J
an 03, 2012 V.5
Surface-Mount Ceramic MULTILAYER CHIP VARISTORS
8
10
Product specification
VR
5.5 V to 38 V
0402 / 0603
0 50 100 150 200 250
300
250
200
150
100
50
0
(°C)
t (s)
215 °C
180 °C
20 to 40 s
internal preheating,
e.g. by infrared,
max. 2 K/s
100 °C
130 °C
external preheating
forced
cooling
T
SCV006
Fig. 6 Vapour phase soldering
0 50 100 150 200 250
300
250
200
150
100
50
0
10 s
235 °C to 260 °Csecond wave
5 K/s
2 K/s
first wave
200 K/s
100 °C to 130 °Cforced
cooling
2 K/s
(°C)
t (s)
T
SCV005
Fig. 5 Double wave soldering
Typical values (solid line)
Process limits (dotted lines)
The capacitors may be soldered twice in accordance with this method if desired
Typical values (solid line) Process limits (dotted lines)
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J
an 03, 2012 V.5
Surface-Mount Ceramic MULTILAYER CHIP VARISTORS
9
10
Product specification
VR
5.5 V to 38 V
0402 / 0603
TESTS AND REQUIREMENTS
Ta b l e 5 Test procedures and requirements
TEST TEST METHOD PROCEDURE REQUIREMENTS
Capacitance
CECC4200
4.6
IEC1051
4.7
f = 1 KHz / 1 MHz
Measuring voltage 1 Vrms at 25 °C
> 5 pF: ±30% at 1KHz
3 pF to 5 pF: +80% / -20% at 1KHz
< 3 pF: +80% / -20% at 1MHz
Bond Strength
of Plating on
End Face
4.9 4.10
To be soldered on the glass-epoxy
(thickness 1.6 mm), the load shall be put on
the board bends 1 mm
No visible damage
Solderability
4.10 4.11
Unmounted chips completely immersed for
2 ±0.5 seconds (dipping time) in a solder
bath at 235 ±2 °C
The termination should be well tinned
Resistance to
Soldering Heat
4.10.2 4.12
Solder bath temperature: 260 ±5 °C
Dipping time: 10 ±0.5 seconds
| V1mA / V1mA | <10%
Rapid Change
of
Temperature
4.12 4.13
5 cycles with following detail
30 minutes at -40°C
30 minutes at +85 °C
| V1mA / V1mA | <10%
Damp Heat
with U
r
Load
4.17 4.18
Duration and conditions:
500 ±12 hours at 40 ±2 °C
90 to 95% RH; U
r
applied
| V1mA / V1mA | <10%
Endurance
4.19 4.20
Duration and conditions:
500 ±12 hours at 85 °C; U
r
applied
| V1mA / V1mA | <10%
Endurance at
Upper
Category
Temperature
4.20 4.20
Duration and conditions:
1,000 ±12 hours at 85 °C
| V1mA / V1mA | <10%
Adhesion
IEC 60384-1
4.34
A force of 2N applied for 10 seconds to the
line joining the terminations and in a plane
parallel to the substrate
No visible damage
Cold
Temperature
Storage
4.25 Duration and conditions
1,000 ±12 hours at -40 ±2 °C
| V1mA / V1mA | <10%
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J
an 03, 2012 V.5
Surface-Mount Ceramic MULTILAYER CHIP VARISTORS
10
10
Product specification
VR
5.5 V to 38 V
0402 / 0603
REVISION HISTORY
REVISION DATE CHANGE NOTIFICATION DESCRIPTION
Version 5 Jan 03, 2012 - - Product range updated
- Leakage current updated
- Working voltage updated
Version 4 Oct 19, 2011 - - Product range and dimension updated
Version 3 Aug 05, 2011 - - Product range updated
Version 2 Dec 02, 2010 - - Dimension updated
- Leakage current updated
- VRS0805KR260251N added
Version 1 Jul 22, 2010 - - Dimension updated
Version 0 Jun 08, 2010 - - New